ETC ZXMP62M832(1)

ZXMP62M832
MPPS™ Miniature Package Power Solutions
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
P-Channel V(BR)DSS = -20V; RDS(ON) = 0.6 ; ID= -1.0A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 30V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
3mm x 2mm Dual Die MLP
PCB area and device placement savings
Reduced component count
FEATURES
• Low On - Resistance
• Fast switching speed
• Low threshold
• Low gate drive
• 3mm x 2mm MLP
APPLICATIONS
• DC-DC Converters
• Power Management Functions
PINOUT
• Disconnection switches
5
• Motor Control
6
D2
D2
7
8
D1
D1
ORDERING INFORMATION
DEVICE
ZXMP62M832TA
REEL
7’‘
TAPE
WIDTH
QUANTITY
PER REEL
8mm
3000 units
S2
G2
4
3
S1
G1
2
1
3 x 2 Dual MLP
underside view
DEVICE MARKING
DPA
PROVISIONAL ISSUE A - MAY 2002
1
ZXMP62M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
P-Channel
UNIT
V
Drain-Source Voltage
V DSS
-20
Gate-Source Voltage
V GS
⫾12
V
Continuous Drain Current@V GS =10V; T A =25⬚C (b)(f)
@V GS =10V; T A =70⬚C (b)(f)
@V GS =10V; T A =25⬚C (a)(f)
ID
-1.6
-1.3
-1.3
A
A
A
Pulsed Drain Current
I DM
-5.6
A
Continuous Source Current (Body Diode)(b)(f)
IS
-2.7
A
Pulsed Source Current (Body Diode)
I SM
-5.6
A
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
PD
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
PD
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
PD
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
PD
1.13
8
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
PD
3
24
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(f)
R θJA
83.3
°C/W
Junction to Ambient (b)(f)
R θJA
51
°C/W
Junction to Ambient (c)(f)
R θJA
125
°C/W
Junction to Ambient (d)(f)
R θJA
111
°C/W
Junction to Ambient (d)(g)
R θJA
73.5
°C/W
Junction to Ambient (e)(g)
R θJA
41.7
°C/W
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
PROVISIONAL ISSUE A - MAY 2002
2
ZXMP62M832
TYPICAL CHARACTERISTICS
3.5
1
DC
1s
100ms
100m
10ms
1ms
100us
10m Note (a)(f)
Single Pulse, Tamb=25°C
1
Thermal Resistance (°C/W)
Max Power Dissipation (W)
RDS(ON)
Limited
80
10
D=0.5
Single Pulse
D=0.2
D=0.05
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
2oz copper
Note (g)
Tamb=25°C
PD Dissipation (W)
0.5
0.0
0
1oz Cu
Note (d)(f)
25
50
75
100
125
3.0 Tj max=150°C
Continuous
2oz copper
Note (f)
1.5
1.0
1oz copper
Note (f)
0.5
1
225
200
175
150
125
100
75
50
25
0
0.1
150
1oz copper
Note (f)
1oz copper
Note (g)
2oz copper
Note (f)
2oz copper
Note (g)
1
10
100
Thermal Resistance v Board Area
3.5
0.0
0.1
1.0
Board Cu Area (sqcm)
Transient Thermal Impedance
2.0
1oz Cu
Note (d)(g)
1.5
Derating Curve
40
2.5
2oz Cu
Note (a)(f)
2.0
Safe Operating Area
Note (a)(f)
0
100µ
2.5
Temperature (°C)
60
20
2oz Cu
Note (e)(g)
3.0
VDS Drain-Source Voltage (V)
Thermal Resistance (°C/W)
ID Drain Current (A)
10
1oz copper
Note (g)
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
PROVISIONAL ISSUE A - MAY 2002
3
ZXMP62M832
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
-20
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
V
Forward Transconductance (1)(3)
␮A
⫾100
nA
V GS =⫾12V, V DS =0V
V
I =-250␮A, V DS = V GS
Ω
Ω
V GS =-4.5V, I D =-0.61A
V GS =-2.7V, I D =-0.31A
S
V DS =-10V,I D =-0.31A
-0.7
Static Drain-Source On-State Resistance R DS(on)
(1)
0.6
0.9
g fs
I D =-250µA, V GS =0V
V DS =-20V, V GS =0V
-1
0.56
D
DYNAMIC (3)
Input Capacitance
C iss
150
pF
Output Capacitance
C oss
70
pF
Reverse Transfer Capacitance
C rss
30
pF
Turn-On Delay Time
t d(on)
2.9
ns
Rise Time
tr
6.7
ns
ns
V DS =-15V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
Turn-Off Delay Time
t d(off)
11.2
Fall Time
tf
10.2
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
5.2
V DD =-10V, I D =-0.93A
R G =6.0Ω, R D=11⍀
(Refer to test circuit)
ns
3.5
nC
Q gs
0.5
nC
Q gd
1.5
nC
Diode Forward Voltage (1)
V SD
-0.95
V
T J =25°C, I S =-0.61A,
V GS =0V
Reverse Recovery Time (3)
t rr
14.9
ns
Reverse Recovery Charge (3)
Q rr
5.6
nC
T J =25°C, I F =-0.61A,
di/dt= 100A/µs
V DS =-16V,V GS =-4.5V,
I D =-0.61A
(Refer to test circuit)
SOURCE-DRAIN DIODE
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - MAY 2002
4
ZXMP62M832
TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE A - MAY 2002
5
ZXMP62M832
TYPICAL CHARACTERISTICS
Basic Gate Charge Waveform
Gate Charge Test Circuit
Switching Time Waveforms
Switching Time Test Circuit
PROVISIONAL ISSUE A - MAY 2002
6
ZXMP62M832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETRES
DIM
INCHES
MILLIMETRES
DIM
MIN.
MAX.
MIN.
MAX.
A
0.80
1.00
0.031
0.039
A1
0.00
0.05
0.00
0.002
E
A2
0.65
0.75
0.0255
0.0295
E2
MIN.
e
MAX.
0.65 REF
2.00 BSC
0.43
0.63
INCHES
MIN.
MAX.
0.0787 BSC
0.0256 BSC
0.017
0.0249
A3
0.15
0.25
0.006
0.0098
E4
0.16
0.36
0.006
0.014
b
0.24
0.34
0.009
0.013
L
0.20
0.45
0.0078
0.0157
b1
0.17
0.30
0.0066
0.0118
L2
0.125
0.00
0.005
D
3.00 BSC
0.118 BSC
D2
0.82
1.02
0.032
0.040
D3
1.01
1.21
0.0397
0.0476
0.075 BSC
⍜
0⬚
12⬚
0.0029 BSC
0⬚
12⬚
© Zetex plc 2002
Zetex plc
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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PROVISIONAL ISSUE A - MAY 2002
7