ZXTDA1M832 MPPS™ Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package), these low saturation NPN / PNP combination dual transistors offer lower on state losses making them ideal for use in DC-DC circuits and various driving and power-management functions. Users will also gain several other key benefits: Performance capability equivalent to much larger packages 3mm x 2mm Dual Die MLP Improved circuit efficiency & power levels PCB area and device placement savings Lower package height (0.9mm nom) C2 Reduced component count FEATURES B2 • Low Equivalent On Resistance • Extremely Low Saturation Voltage (100mV max @1A--NPN) • HFE specified up to 12A E2 • IC = 4.5A Continuous Collector Current • 3mm x 2mm MLP APPLICATIONS • DC - DC Converters PINOUT • Charging circuits • Power switches • Motor control • LED Backlighting circuits ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXTDA1M832TA 7 ⴕⴕ 8mm 3000 ZXTDA1M832TC 13ⴕ ⴕ 8mm 10000 3mm x 2mm Dual MLP underside view DEVICE MARKING DA1 ISSUE 1 - JUNE 2002 1 ZXTDA1M832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage V CBO 40 -20 V Collector-Emitter Voltage V CEO 15 -12 V Emitter-Base Voltage V EBO 7.5 -7.5 V Peak Pulse Current I CM 15 -12 A Continuous Collector Current (a)(f) IC 4.5 -4 A 5 -4.4 A Continuous Collector Current (b)(f) IC Base Current IB 1000 mA Power Dissipation at TA=25°C (a)(f) Linear Derating Factor PD 1.5 12 W mW/°C Power Dissipation at TA=25°C (b)(f) Linear Derating Factor PD 2.45 19.6 W mW/°C Power Dissipation at TA=25°C (c)(f) Linear Derating Factor PD 1 8 W mW/°C Power Dissipation at TA=25°C (d)(f) Linear Derating Factor PD 1.13 8 W mW/°C Power Dissipation at TA=25°C (d)(g) Linear Derating Factor PD 1.7 13.6 W mW/°C Power Dissipation at TA=25°C (e)(g) Linear Derating Factor PD 3 24 W mW/°C Storage Temperature Range T stg Junction Temperature Tj -55 to +150 °C 150 °C THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(f) R θJA VALUE 83.3 UNIT °C/W Junction to Ambient (b)(f) R θJA 51 °C/W Junction to Ambient (c)(f) R θJA 125 °C/W Junction to Ambient (d)(f) R θJA 111 °C/W Junction to Ambient (d)(g) R θJA 73.5 °C/W Junction to Ambient (e)(g) R θJA 41.7 °C/W Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW. ISSUE 1 - JUNE 2002 2 ZXTDA1M832 10 VCE(SAT) Limited 1 DC 1s 100ms 0.1 10ms 1ms Note (a)(f) 0.01 100us 1 VCE(SAT) Limited 1 DC 1s 100ms 0.1 10ms 1ms Note (a)(f) 0.01 Single Pulse, Tamb=25°C 0.1 10 IC Collector Current (A) IC Collector Current (A) TYPICAL CHARACTERISTICS 100us Single Pulse, Tamb=25°C 0.1 10 1 10 VCE Collector-Emitter Voltage (V) VCE Collector-Emitter Voltage (V) PNP Safe Operating Area NPN Safe Operating Area 60 D=0.5 40 Single Pulse D=0.2 20 D=0.05 0 100µ 1m D=0.1 10m 100m 1 10 100 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 3.5 Note (a)(f) 80 2.5 1.0 0.5 0.0 0 Thermal Resistance (°C/W) PD Dissipation (W) 2oz copper Note (g) 1.5 1.0 1oz copper Note (f) 0.5 0.0 0.1 1 25 50 75 100 125 150 Derating Curve 2oz copper Note (f) 2.0 1oz Cu Note (d)(f) Temperature (°C) 3.5 2.5 1oz Cu Note (d)(g) 1.5 Transient Thermal Impedance 3.0 2oz Cu Note (a)(f) 2.0 Pulse Width (s) Tamb=25°C Tj max=150°C Continuous Tamb=25°C 2oz Cu Note (e)(g) 3.0 1oz copper Note (g) 10 100 Board Cu Area (sqcm) 225 200 175 150 125 100 75 50 25 0 0.1 1oz copper Note (f) 1oz copper Note (g) 2oz copper Note (f) 2oz copper Note (g) 1 10 100 Board Cu Area (sqcm) Thermal Resistance v Board Area Power Dissipation v Board Area ISSUE 1 - JUNE 2002 3 ZXTDA1M832 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO 40 70 V I C =100A Collector-Emitter Breakdown Voltage V (BR)CEO 15 18 V I C =10mA* Emitter-Base Breakdown Voltage V (BR)EBO 7.5 8.2 V I E =100A Collector Cut-Off Current I CBO 25 nA V CB =32V Emitter Cut-Off Current I EBO 25 nA V EB =6V Collector Emitter Cut-Off Current I CES 25 nA V CE =12V Collector-Emitter Saturation Voltage V CE(sat) 8 70 165 240 14 100 200 280 mV mV mV mV I C =0.1A, I B =10mA* I C =1A, I B =10mA* I C =3A, I B =50mA I C =4.5A, I B =50mA Base-Emitter Saturation Voltage V BE(sat) 0.94 1.00 V I C =4.5A, I B =50mA* Base-Emitter Turn-On Voltage V BE(on) 0.88 0.95 V Static Forward Current Transfer Ratio h FE Transition Frequency fT 200 300 200 150 415 450 320 240 80 80 120 MAX. UNIT CONDITIONS. I C =4.5A, V CE =2V* I C =10mA, V CE =2V* I C =200mA, V CE =2V* I C =3A, V CE =2V* I C =5A, V CE =2V* I C =12A, V CE =2V* MHz 40 I C =-50mA, V CE =-10V f=100MHz Output Capacitance C obo 30 pF V CB =-10V, f=1MHz Turn-On Time t (on) 120 ns Turn-Off Time t (off) 160 ns V CC =-6V, I C =-1A I B1 =I B2 =-10mA *Measured under pulsed conditions. ISSUE 1 - JUNE 2002 4 ZXTDA1M832 NPN CHARACTERISTICS 1 0.25 IC/IB=50 Tamb=25°C 0.20 VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=100 10m IC/IB=50 0.15 100°C 0.10 25°C -55°C 0.05 IC/IB=10 1m 1m 10m 100m 1 0.00 1m 10 IC Collector Current (A) VCE(SAT) v IC 10m 100m 1 10 1 10 IC Collector Current (A) VCE(SAT) v IC 630 1.0 25°C 360 0.6 270 -55°C 0.4 180 0.2 90 10m 100m 1 10 0 VBE(ON) (V) -55°C 0.6 25°C 100°C 10m 100m 1 10m 100m IC Collector Current (A) VBE(SAT) v IC VCE=2V IC Collector Current (A) 25°C 0.6 1m 0.8 0.2 1m -55°C 100°C hFE v IC 0.4 0.8 0.4 IC Collector Current (A) 1.0 IC/IB=50 450 0.8 0.0 1m 1.0 540 100°C VBE(SAT) (V) Normalised Gain 1.2 Typical Gain (hFE) VCE=2V 10 VBE(ON) v IC ISSUE 1 - JUNE 2002 5 ZXTDA1M832 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO -20 -35 V I C =-100A Collector-Emitter Breakdown Voltage V (BR)CEO -12 -25 V I C =-10mA* Emitter-Base Breakdown Voltage V (BR)EBO -7.5 -8.5 V I E =-100A Collector Cut-Off Current I CBO -25 nA V CB =-16V Emitter Cut-Off Current I EBO -25 nA V EB =-6V Collector Emitter Cut-Off Current I CES -25 nA V CE =-10V Collector-Emitter Saturation Voltage V CE(sat) -10 -100 -100 -195 -240 -17 -140 -150 -300 -300 mV mV mV mV mV I C =-0.1A, I B =-10mA* I C =-1.0A, I B =-10mA* I C =-1.5A, I B =-50mA* I C =-3A, I B =-50mA* I C =-4A, I B =-150mA* Base-Emitter Saturation Voltage V BE(sat) -0.97 -1.050 V I C =-4A, I B =-150mA* Base-Emitter Turn-On Voltage V BE(on) -0.87 -0.950 V Static Forward Current Transfer Ratio h FE 300 300 180 60 45 475 450 275 100 70 Transition Frequency fT 100 110 Output Capacitance C obo 21 MAX. UNIT CONDITIONS. I C =-4A, V CE =-2V* I C =-10mA, V CE =-2V* I C =-100mA, V CE =-2V* I C =-2.5A, V CE =-2V* I C =-8A, V CE =-2V* I C =-10A, V CE =-2V* MHz 30 I C =-50mA, V CE =-10V f=100MHz pF V CB =-10V, f=1MHz V CC =-10V, I C =-1A I B1 =I B2 =-50mA Turn-On Time t (on) 70 ns Turn-Off Time t (off) 130 ns *Measured under pulsed conditions. ISSUE 1 - JUNE 2002 6 ZXTDA1M832 PNP CHARACTERISTICS 0.25 IC/IB=50 Tamb=25°C 0.20 VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=100 10m IC/IB=50 10m -55°C 100m 1 0.00 1m 10 IC Collector Current (A) VCE(SAT) v IC VCE=2V 100°C 630 1.0 VBE(SAT) (V) 450 360 25°C 0.6 270 0.4 180 -55°C 0.2 0.0 1m 90 10m 100m 1 10 0 VBE(ON) (V) 10 -55°C 0.6 25°C 100°C 100m 1 IC Collector Current (A) -55°C 25°C 0.6 10m 100m IC Collector Current (A) VBE(SAT) v IC VCE=2V 10m 1 IC/IB=50 0.8 1m 0.8 0.2 1m 10 100°C hFE v IC 0.4 1 0.4 IC Collector Current (A) 1.0 100m 540 1.0 0.8 10m IC Collector Current (A) VCE(SAT) v IC Typical Gain (hFE) Normalised Gain 1.4 1.2 25°C 0.10 0.05 IC/IB=10 1m 1m 100°C 0.15 10 VBE(ON) v IC ISSUE 1 - JUNE 2002 7 ZXTDA1M832 MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE DIMENSIONS MILLIMETRES DIM INCHES MILLIMETRES DIM MIN. MAX. MIN. MAX. A 0.80 1.00 0.031 0.039 A1 0.00 0.05 0.00 0.002 E A2 0.65 0.75 0.0255 0.0295 E2 0.43 0.63 0.017 0.0249 A3 0.15 0.25 0.006 0.0098 E4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.009 0.013 L 0.20 0.45 0.0078 0.0157 b1 0.17 0.30 0.0066 0.0118 L2 0.125 0.00 0.005 D 3.00 BSC e 0.118 BSC D2 0.82 1.02 0.032 0.040 D3 1.01 1.21 0.0397 0.0476 MIN. r ⍜ MAX. INCHES 0.65 REF 2.00 BSC 0.075 BSC 0⬚ 12⬚ MIN. MAX. 0.0256 BSC 0.0787 BSC 0.0029 BSC 0⬚ 12⬚ © Zetex plc 2002 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (631) 360 2222 Fax: (631) 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2002 8