ZETEX ZXTEM322TC

ZXTEM322
MPPSTM Miniature Package Power Solutions
80V NPN LOW SATURATION TRANSISTOR
SUMMARY
NPN —- VCEO= 80V; RSAT = 68m ; IC= 3.5A
DESCRIPTION
Packaged in the new innovative 2mm x 2mm MLP (Micro Leaded Package)
outline, these new 4th generation low saturation dual PNP transistors offer
extremely low on state losses making them ideal for use in DC-DC circuits and
various driving and power management functions.
Additionally users gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower Package Height (0.9mm nom)
Reduced component count
MLP322
FEATURES
• Low Equivalent On Resistance
• Extremely Low Saturation Voltage (185mV max @1A)
• hFE specified up to 5A
• IC=-3.5A Continuous Collector Current
• 2mm x 2mm MLP
APPLICATIONS
• DC - DC Converters
• DC - DC Modules
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXTEM322TA
7”
8mm
3000
ZXTEM322TC
13”
8mm
10000
Underside View
DEVICE MARKING
• SE
ISSUE 1 - JUNE 2003
1
SEMICONDUCTORS
ZXTEM322
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
Collector-Base Voltage
V CBO
100
Collector-Emitter Voltage
V CEO
80
V
Emitter-Base Voltage
V EBO
7.5
V
5
A
Peak Pulse Current
I CM
(a)
IC
3.5
A
Base Current
IB
1000
mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD
1.5
12
W
mW/⬚C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
2.45
19.6
W
mW/⬚C
Power Dissipation at TA=25°C (d)
Linear Derating Factor
PD
1
8
W
mW/⬚C
Power Dissipation at TA=25°C (e)
Linear Derating Factor
PD
3
24
W
mW/⬚C
-55 to +150
⬚C
150
⬚C
VALUE
UNIT
Continuous Collector Current
Operating & Storage Temperature Range
T j :T stg
Junction Temperature
Tj
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R ⍜JA
83
⬚C/W
Junction to Ambient
(b)
R ⍜JA
51
⬚C/W
Junction to Ambient
(d)
R ⍜JA
125
⬚C/W
Junction to Ambient
(e)
R ⍜JA
42
⬚C/W
NOTES
(a) For a single device surface mounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions measured at tⱕ5 secs with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10 sq cm 1oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65 sq cm 2oz copper FR4 PCB, in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in
the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight and
1mm wide tracks is Rth= 300°C/W giving a power rating of Ptot=420mW
ISSUE 1 - JUNE 2003
SEMICONDUCTORS
2
ZXTEM322
TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2003
3
SEMICONDUCTORS
ZXTEM322
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown Voltage
V (BR)CBO
100
180
MAX. UNIT CONDITIONS
V
I C =100␮A
Collector-Emitter Breakdown Voltage
V (BR)CEO
80
110
V
I C =10mA*
Emitter-Base Breakdown Voltage
V (BR)EBO
7.5
8.2
V
I E =100␮A
Collector Cut-Off Current
I CBO
25
nA
V CB =80V
Emitter Cut-Off Current
I EBO
25
nA
V EB =6V
Collector Emitter Cut-Off Current
I CES
25
nA
V CE =65V
Collector-Emitter Saturation Voltage
V CE(sat)
15
45
145
160
240
20
60
185
200
325
mV
mV
mV
mV
mV
I C =0.1A, I B =10mA*
I C =0.5A, I B =50mA*
I C =1A, I B =20mA*
I C =1.5A, I B =50mA*
I C =3.5A, I B =300mA*
Base-Emitter Saturation Voltage
V BE(sat)
1.09
1.175
V
Base-Emitter Turn-On Voltage
V BE(on)
0.96
1.05
V
I C =3.5A, I B =300mA*
I C =3.5A, V CE =2V*
Static Forward Current Transfer Ratio
h FE
200
300
110
60
20
450
450
170
90
30
10
fT
100
160
Transition Frequency
I C =10mA, V CE =2V*
I C =200mA, V CE =2V*
I C =1A, V CE =2V*
I C =1.5A, V CE =2V*
I C =3A, V CE =2V*
I C =5A, V CE =2V*
900
MHz I C =50mA, V CE =10V
f=100MHz
Output Capacitance
C obo
11.5
pF
V CB =10A, f=1MHz
Turn-On Time
t (on)
86
18
ns
Turn-Off Time
t (off)
1128
ns
V CC =10V, I C =1A
I B1 =I B2 =25mA
*Measured under pulsed conditions. Pulse width=300␮s. Duty cycle ⱕ 2%
ISSUE 1 - JUNE 2003
SEMICONDUCTORS
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ZXTEM322
TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2003
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SEMICONDUCTORS
ZXTEM322
PACKAGE OUTLINE
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
Millimetres
DIM
Min
Max
Min
Max
A
0.80
1.00
0.0315
0.0393
e
0.65 REF
0.0255 REF
A1
0.00
0.05
0.00
0.002
E
2.00 BSC
0.0787 BSC
A2
0.65
0.75
0.0255
0.0295
E2
0.79
0.99
0.031
0.039
A3
0.15
0.25
0.0059
0.0098
E4
0.48
0.68
0.0188
0.0267
b
0.18
0.28
0.0070
0.0110
L
0.20
0.45
0.0078
0.0177
b1
0.17
0.30
0.0066
0.0118
L2
0.125 MAX.
0.005 REF
r
0.075 BSC
0.0029 BSC
⍜
0⬚
0⬚
D
2.00 BSC
0.0787 BSC
D2
1.22
1.42
0.0480
0.0559
D4
0.56
0.76
0.0220
0.0299
Min
Max
Inches
12⬚
Min
Max
12⬚
© Zetex plc 2003
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ISSUE 1 - JUNE 2003
SEMICONDUCTORS
6