ZXT4M322 MPPSTM Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP— VCEO= -70V; RSAT = 117m ; IC= -2.5A DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP (Micro Leaded Package) outline, this new 4th generation low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Additionally users gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Lower Package Height (0.9mm nom) Reduced component count MLP322 FEATURES • Low Equivalent On Resistance • Extremely Low Saturation Voltage (-220mV max @1A) • hFE specified up to 3A • IC=2.5A Continuous Collector Current • 2mm x 2mm MLP APPLICATIONS • DC - DC Converters • DC - DC Modules • Power switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXTD4M322TA 7” 8mm 3000 ZXTD4M322TC 13” 8mm 10000 Underside View DEVICE MARKING • S4 ISSUE 1 - JUNE 2003 1 SEMICONDUCTORS ZXT4M322 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V CBO -70 V Collector-Emitter Voltage V CEO -70 V Emitter-Base Voltage V EBO -7.5 V Peak Pulse Current I CM -3 A Continuous Collector Current (a) IC -2.5 A Base Current IB -1000 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.5 12 W mW/⬚C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 2.45 19.6 W mW/⬚C Power Dissipation at TA=25°C (d) Linear Derating Factor PD 1 8 W mW/⬚C Power Dissipation at TA=25°C (e) Linear Derating Factor PD 3 24 W mW/⬚C -55 to +150 ⬚C 150 ⬚C VALUE UNIT Operating & Storage Temperature Range T j :T stg Junction Temperature Tj THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R ⍜JA 83 ⬚C/W Junction to Ambient (b) R ⍜JA 51 ⬚C/W Junction to Ambient (d) R ⍜JA 125 ⬚C/W Junction to Ambient (e) R ⍜JA 42 ⬚C/W NOTES (a) For a single device surface mounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached. (b) For a single device surface mounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions measured at tⱕ5 secs with all exposed pads attached. (c) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (d) For a single device surface mounted on 10 sq cm 1oz copper FR4 PCB, in still air conditions with minimal lead connections only. (e) For a single device surface mounted on 65 sq cm 2oz copper FR4 PCB, in still air conditions with all exposed pads attached. (f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight and 1mm wide tracks is Rth= 300°C/W giving a power rating of Ptot=420mW ISSUE 1 - JUNE 2003 SEMICONDUCTORS 2 ZXT4M322 TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2003 3 SEMICONDUCTORS ZXT4M322 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO -70 -150 MAX. UNIT CONDITIONS V I C =-100A Collector-Emitter Breakdown Voltage V (BR)CEO -70 -125 V I C =-10mA* Emitter-Base Breakdown Voltage V (BR)EBO -7.5 -8.5 V I E =-100A Collector Cut-Off Current I CBO -25 nA V CB =-55V Emitter Cut-Off Current I EBO -25 nA V EB =-6V Collector Emitter Cut-Off Current I CES -25 nA V CE =-55V Collector-Emitter Saturation Voltage V CE(sat) -35 -135 -140 -175 -50 -200 -220 -260 mV mV mV mV I C =-0.1A, I B =-10mA* I C =-0.5A, I B =-20mA* I C =-1A, I B =-100mA* I C =-1.5A, I B =-200mA* Base-Emitter Saturation Voltage V BE(sat) -0.94 -1.05 V Base-Emitter Turn-On Voltage V BE(on) -0.78 -1.00 V I C =-1.5A, I B =-200mA* I C =-1.5A, V CE =-5V* Static Forward Current Transfer Ratio h FE 300 300 175 40 470 450 275 60 10 Transition Frequency fT 150 180 I C =-10mA, V CE =-5V* I C =-100mA, V CE =-5V* I C =-1A, V CE =-5V* I C =-1.5A, V CE =-5V* I C =-3A, V CE =-5V* MHz I C =-50mA, V CE =-10V f=100MHz Output Capacitance C obo 14 pF V CB =-10A, f=1MHz Turn-On Time t (on) 40 20 ns Turn-Off Time t (off) 700 ns V CC =-50V, I C =-1A I B1 =I B2 =-50mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle ⱕ 2% ISSUE 1 - JUNE 2003 SEMICONDUCTORS 4 ZXT4M322 TYPICAL CHARACTERISTICS 0.6 0.6 25°C IC/IB=10 0.5 VCE (VOLTS) VCE (VOLTS) 0.5 0.4 IC/IB=50 IC/IB=20 IC/IB=10 IC/IB=5 0.3 0.2 0.1 0.4 0.3 100°C 25°C 0.2 -55°C 0.1 0.0 1mA 10mA 100mA 1A 0.0 1mA 10A Collector Current VBE(SAT) vs IC 1.6 450 25°C 0.8 0.6 0.4 225 -55°C 0.0 1mA 1A 10A IC/IB=5 -55°C 0.8 25°C 0.6 100°C 0.4 10mA 100mA 1A 0.0 1mA 10A Collector Current hFE(SAT) vs IC 10mA 100mA Collector Current VBE(SAT) vs IC 10 SINGLE PULSE TEST Tamb = 25 deg C VCE=5V 0.8 -55°C IC (AMPS) VBE (VOLTS) 10A 0.2 0.2 1.0 1A 1.0 VBE (VOLTS) 1.2 Typical Gain (hFE) Normalised Gain 1.2 1.4 1.0 100mA Collector Current VCE(SAT) vs IC VCE=5V 100°C 10mA 25°C 0.6 100°C 0.4 1.0 0.1 D.C. 1s 100ms 10ms 1ms 100µs 0.2 0.0 1mA 10mA 100mA 1A 0.01 0.1 10A 1 10 100 VCE (VOLTS) Collector Current VBE(ON) vs IC Safe Operating Area ISSUE 1 - JUNE 2003 5 SEMICONDUCTORS ZXT4M322 PACKAGE OUTLINE Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS DIM Millimetres Inches Millimetres DIM Min Max Min Max A 0.80 1.00 0.0315 0.0393 e 0.65 REF 0.0255 REF A1 0.00 0.05 0.00 0.002 E 2.00 BSC 0.0787 A2 0.65 0.75 0.0255 0.0295 E2 0.79 0.99 0.031 0.039 A3 0.15 0.25 0.0059 0.0098 E4 0.48 0.68 0.0188 0.0267 b 0.18 0.28 0.0070 0.0110 L 0.20 0.45 0.0078 0.0177 b1 0.17 0.30 0.0066 0.0118 L2 0.125 MAX. 0.005 REF r 0.075 BSC 0.0029 BSC ⍜ 0⬚ 0⬚ D 2.00 BSC 0.0787 BSC D2 1.22 1.42 0.0480 0.0559 D4 0.56 0.76 0.0220 0.0299 Min Max Inches 12⬚ Min Max 12⬚ © Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2003 SEMICONDUCTORS 6