ZXTN19055DZ 55V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 55V IC(cont) = 6A VCE(sat) < 60mV @ 1A RCE(sat) = 28m⍀ PD = 2.1W Description C Packaged in the SOT89 outline this low saturation 55V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. B Feature • Extremely low equivalent on-resistance of 28m⍀ • 6 Amps continuous current • Up to 10 amps peak current • Very low saturation voltages • Excellent hFE characteristics up to 10 amps • 150V Forward blocking voltage E E C C Applications B • Emergency lighting circuits • Motor driving (including DC fans) • Solenoid, relay and actuator drivers • DC modules • Backlight inverters Pinout - top view Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 7 12 1000 ZXTN19055DZTA Device marking S75 Issue 1 - June 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN19055DZ Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 150 V Collector-emitter voltage (forward blocking voltage) VCEX 150 V Collector-emitter voltage (base open) VCEO 55 V Emitter-base voltage VEBO 7 V IC 6 A Peak pulse current ICM 10 A Power dissipation at Tamb =25°C(a) PD 1.5 W 12 mW/°C 2.1 W 16.8 mW/°C Tj, Tstg -55 to +150 °C Symbol Limit Unit Junction to ambient(a) R⍜JA 83 °C/W Junction to ambient(b) R⍜JA 59 °C/W Continuous collector current(b) Linear derating factor Power dissipation at Tamb =25°C PD (b) Linear derating factor Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 1 - June 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN19055DZ Characteristics Issue 1 - June 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN19055DZ Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Symbol BVCBO Min. 150 Typ. 200 BVCEX 150 200 V IC = 100mA, RBE < 1k⍀ or -1V < VBE < +0.25V Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Collector-base cut-off current BVCEO 55 75 V IC = 10mA (*) BVEBO 7 8.1 V IE = 100mA 50 nA VCB = 120V 20 A VCB = 120V, Tamb= 100°C ICBO <1 Max. Unit Conditions V IC = 100mA Collector-emitter cut-off current ICEX <1 100 nA VCE = 120V; RBE < 1k⍀ or -1V < VBE < 0.25V Emitter cut-off current IEBO <1 50 nA VEB = 5.6V Collector-emitter saturation voltage VCE(sat) 25 40 mV IC = 0.5A, IB = 50mA(*) 45 70 mV IC = 1A, IB = 50mA(*) 40 60 mV IC = 1A, IB = 100mA(*) 200 350 mV IC = 2A, IB = 20mA(*) 110 140 mV IC = 2A, IB = 40mA(*) 140 200 mV IC = 4A, IB = 200mA(*) 170 250 mV IC = 6A, IB = 600mA(*) 800 900 mV IC = 2A, IB = 20mA(*) 1000 1150 mV IC = 6A, IB = 600mA(*) 760 900 mV IC = 2A, VCE = 2V(*) 900 1050 mV IC = 6A, VCE = 2V(*) 250 400 700 250 400 IC = 1A, VCE = 2V(*) 180 300 IC = 2A, VCE = 2V(*) 30 50 IC = 6A, VCE = 2V(*) 20 IC = 10A, VCE = 2V(*) Base-emitter saturation voltage VBE(sat) Base-emitter turn-on voltage VBE(on) Static forward current transfer hFE ratio Transition frequency fT Output capacitance COBO 21.2 Delay time td 13.8 140 200 Rise time tr 21.9 Storage time ts 546 Fall time tf 106 IC = 10mA, VCE = 2V(*) MHz IC = 100mA, VCE =10 V f = 50MHz 30 pF VCB = 10V, f = 1MHz VCC = 10V, IC = 1A, IB1 = IB2 = 100mA NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%. Issue 1 - June 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN19055DZ Typical characteristics Issue 1 - June 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN19055DZ Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max A 1.40 1.60 0.550 0.630 E1 2.13 2.29 0.084 0.090 B 0.44 0.56 0.017 0.022 e 1.50 BSC 0.059 BSC B1 0.36 0.48 0.014 0.019 e1 3.00 BSC 0.118 BSC C 0.35 0.44 0.014 0.019 H 3.94 4.25 0.155 0.167 D 4.40 4.60 0.173 0.181 L 0.89 1.20 0.155 0.167 E 2.29 2.60 0.090 0.102 - - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - June 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com