ZXTP25100BFH 100V, SOT23, PNP medium power transistor Summary BV(BR)CEX > -140V, BV(BR)CEO > -100V BV(BR)ECX > -7V ; IC(cont) = -2A VCE(sat) < -130mV @ -1A RCE(sat) = 108m typical PD = 1.25W Complementary part number ZXTN25100BFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features • High power dissipation SOT23 package • High peak current • Low saturation voltage • 140V forward blocking voltaget • 7V reverse blocking voltage E Applications • MOSFET and IGBT gate driving • DC - DC converters • Motor drive • Relay, lamp, and solenoid drive Pinout - top view Ordering information Device ZXTP25100BFHTA Reel size (inches) Tape width Quantity per reel 7 8mm 3,000 Device marking 056 Issue 1 - March 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTP25100BFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -140 V Collector-emitter voltage (forward blocking) VCEX -140 V Collector-emitter voltage VCEO -100 V Emitter-collector voltage (reverse blocking) VECX -7 V Emitter-base voltage VEBO -7 V IC -2 A Peak pulse current ICM -5 A Power dissipation at TA =25°C (a) Linear derating factor PD 0.73 5.84 W mW/°C Power dissipation at TA =25°C (b) Linear derating factor PD 1.05 8.4 W mW/°C Power dissipation at TA =25°C (c) Linear derating factor PD 1.25 9.6 W mW/°C Power dissipation at TA =25°C (d) Linear derating factor PD 1.81 14.5 W mW/°C Tj, Tstg -55 to 150 °C Symbol Limit Unit Junction to ambient (a) RJA 171 °C/W Junction to ambient (b) RJA 119 °C/W Junction to ambient (c) RJA 100 °C/W Junction to ambient (d) RJA 69 °C/W Continuous collector current (b) Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - March 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTP25100BFH Characteristics Issue 1 - March 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTP25100BFH Electrical characteristics (at TAMB = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO -140 Collector-emitter breakdown voltage (forward blocking) BVCEX Collector-emitter breakdown voltage (base open) Max. Unit Conditions -165 V IC = -100A -140 -165 V IC = -100A, RBE < 1k or -0.25V < VBE < 1V BVCEO -100 -125 V IC = -10mA (*) Emitter-collector breakdown voltage (reverse blocking) BVECX -7 8.2 V IE = -100A, RBC < 1k or -0.25V < VBC < 0.25V Emitter-base breakdown voltage BVEBO -7 -8.2 V IE = -100A Collector cut-off current ICBO <-1 -50 -20 nA A VCB = -112V VCB = -112V, TAMB= 100°C Collector emitter cut-off current ICEX - -100 nA VCE = -112V; RBE < 1k or -0.25V < VBE < 1V Emitter cut-off current IEBO <-1 -50 nA VEB = -5.6V Collector-emitter saturation voltage VCE(sat) -60 -90 mV IC = -0.5A, IB = -50mA (*) -240 -350 mV IC = -0.5A, IB = -10mA (*) -100 -130 mV IC = -1A, IB = -100mA (*) -215 -295 mV IC = -2A, IB = -200mA (*) Base-emitter saturation voltage VBE(sat) -900 -1000 mV IC = -2A, IB = -200mA (*) Base-emitter turn-on voltage VBE(on) -830 -950 mV IC = -2A, VCE = -2V (*) Static forward current transfer ratio hFE 100 200 300 55 105 IC = -1A, VCE = -2V (*) 15 25 IC = -2A, VCE = -2V (*) Transition frequency fT 200 Output capacitance COBO 15 Turn-on time t(on) Turn-off time t(off) IC = -10mA, VCE = -2V (*) MHz IC = -100mA, VCE = -5V f = 100MHz pF VCB = -10V, f = 1MHz (*) 31 ns 384 ns VCC = -10V, IC = -500mA, IB1 = IB2= -50mA 25 NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. Issue 1 - March 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXTP25100BFH Typical characteristics Issue 1 - March 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXTP25100BFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.0375 NOM - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - March 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com