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Doc. No. 5SYA1620-01 July 03
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Collector-emitter voltage
6\PERO &RQGLWLRQV
VCES
DC collector current
IC
Peak collector current
ICM
Gate-emitter voltage
VGE = 0 V, Tvj ≥ 25 °C
Limited by Tvjmax
VGES
IGBT short circuit SOA
tpsc
Junction temperature
Tvj
PLQ
-20
VCC = 1300 V, VCEM ≤ 1700 V
VGE ≤ 15 V, Tvj ≤ 125 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur
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PD[
8QLW
1700
V
100
A
200
A
20
V
10
µs
150
°C
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Collector (-emitter)
breakdown voltage
V(BR)CES
1700
Collector-emitter
saturation voltage
VCE sat
VGE = 0 V, IC = 1 mA, Tvj = 25 °C
IC = 100 A, VGE = 15 V
Tvj = 25 °C
VCE = 1700 V, VGE = 0 V
Gate leakage current
IGES
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
VGE(TO)
Gate charge
Qge
Input capacitance
Cies
2.1
2.3
800
4.5
6.5
V
IC = 100 A, VCE = 900 V, VGE = -15 ..15 V
880
0.40
Internal gate resistance
RGint
4
Turn-on delay time
td(on)
Fall time
Turn-on switching energy
Turn-off switching energy
Short circuit current
tf
Eon
Eoff
ISC
nC
9.5
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
Cres
td(off)
µA
nA
Reverse transfer capacitance
Turn-off delay time
µA
500
Coes
tr
V
-500
Output capacitance
Rise time
8QLW
V
100
Tvj = 125 °C
IC = 4 mA, VCE = VGE, Tvj = 25 °C
2.7
2.6
Tvj = 25 °C
ICES
PD[
V
Tvj = 125 °C
Collector cut-off current
Gate-emitter threshold voltage
W\S
0.64
VCC = 900 V, IC = 100 A,
RG = 10 Ω, VGE = ±15 V,
Lσ = 160 nH,
inductive load
Tvj = 25 °C
160
Tvj = 125 °C
170
Tvj = 25 °C
100
Tvj = 125 °C
110
VCC = 900 V, IC = 100 A,
RG = 10 Ω, VGE = ±15 V,
Lσ = 160 nH,
inductive load
Tvj = 25 °C
400
Tvj = 125 °C
480
Tvj = 25 °C
90
Tvj = 125 °C
110
Tvj = 25 °C
22
VCC = 900 V, IC = 100 A,
VGE = ±15 V, RG = 10 Ω,
Lσ = 160 nH,
inductive load,
FWD: 5SLX12H1700
VCC = 900 V, IC = 100 A,
VGE = ±15 V, RG = 10 Ω,
Lσ = 160 nH,
inductive load
nF
Ω
ns
ns
ns
ns
mJ
Tvj = 125 °C
32
Tvj = 25 °C
17
Tvj = 125 °C
27
mJ
tpsc ” V9GE = 15 V, Tvj = 125 °C,
VCC = 1300 V, VCEM ”9
470
A
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Doc. No. 5SYA1620-01 July 03
page 2 of 5
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Overall die L W
x
13.6 13.6
mm
exposed
L x W (except gate pad)
front metal
11.6 x 11.6
mm
1.2 x 1.2
mm
210 ± 15
µm
4
µm
1.2
µm
x
Dimensions
gate pad
LxW
thickness
Metallization
1)
front
AISi1
back
AI / Ti / Ni / Ag
1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors,
Doc. No. 5SYA2033-01 April 02.
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Emitter
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Doc. No. 5SYA1620-01 July 03
page 3 of 5
60;0
200
200
VCE = 25 V
25 °C
175
175
125 °C
150
150
125
IC [A]
IC [A]
125
100
100
75
75
50
50
125 °C
25 °C
25
25
VGE = 15 V
0
0
0
1
2
3
4
0
5
1
2
3
4
)LJ
Typical onstate characteristics
0.300
7
8
9
10 11 12
Typical transfer characteristics
0.100
VCC = 900 V
RG = 10 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 160 nH
0.250
VCC = 900 V
IC = 100 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 160 nH
0.090
0.080
0.070
Eon, Eoff [J]
0.200
Eon, Eoff [J]
6
VGE [V]
VCE [V]
)LJ
5
0.150
0.100
0.060
Eon
0.050
0.040
0.030
Eoff
Eon
0.020
0.050
Eoff
0.010
0.000
0.000
0
50
100
150
200
250
0
300
)LJ
Typical switching characteristics vs
collector current
10
20
30
40
50
60
70
RG [ohm]
Ic [A]
)LJ
Typical switching characteristics vs
gate resistor
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Doc. No. 5SYA1620-01 July 03
page 4 of 5
60;0
100
20
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
VCC = 900 V
15
Cies
10
C [nF]
VGE [V]
VCC = 1300
10
Coes
1
5
Cres
IC = 100 A
Tvj = 25 °C
0
0.1
0.0
)LJ
0.1
0.2
0.3
0.4
0.5
Qg [µC]
0.6
Typical gate charge characteristics
0.7
0.8
0
)LJ
5
10
15
20
VCE [V]
25
30
35
Typical capacitances vs
collector-emitter voltage
This technical information specifies semiconductor devices but promises no characteristics. No warranty or
guarantee expressed or implied is made regarding delivery, performance or suitability.
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Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
[email protected]
www.abb.com/semiconductors
Doc. No. 5SYA1620-01 July 03