VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 620 A 970 A 8000 A 0.92 V 0.780 mΩ Ω Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA1020-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications • Optimum power handling capability Blocking Part Number VDRM 5STP 06D2800 5STP 06D2600 5STP 06D2200 Conditions VRRM VRSM1 2800 V 2600 V 2200 V f = 50 Hz, tp = 10ms 3000 V 2800 V 2400 V tp = 5ms, single pulse IDRM ≤ 100 mA VDRM IRRM ≤ 100 mA VRRM dV/dtcrit 1000 V/µs Exp. to 0.67 x VDRM, Tj = 125°C Mechanical data FM a Mounting force nom. 10 kN min. 8 kN max. 12 kN Acceleration Device unclamped 50 m/s2 Device clamped 100 m/s2 m Weight 0.3 kg DS Surface creepage distance 25 mm Da Air strike distance 14 mm Tj = 125°C ABB Semiconductors AG reserves the right to change specifications without notice. 5STP 06D2800 On-state ITAVM Max. average on-state current 620 A ITRMS Max. RMS on-state current 970 A ITSM Max. peak non-repetitive 8000 A surge current 8500 A 2 It Limiting load integral Half sine wave, TC = 70°C tp = 10 ms Tj = 125°C tp = 8.3 ms After surge: 2 320 kA s tp = 10 ms VD = VR = 0V 2 8.3 ms 300 kA s tp = VT On-state voltage 1.70 V IT = 1000 A VT0 Threshold voltage 0.92 V IT = 333 - 1000 A rT Slope resistance 0.780 mΩ IH Holding current 20-70 mA Tj = 25°C 10-50 mA Tj = 125°C 80-500 mA Tj = 25°C 50-200 mA Tj = 125°C IL Latching current Tj = 125°C Switching di/dtcrit Critical rate of rise of on-state current 150 A/µs Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C 300 A/µs 60 sec. f = 50Hz ITRM = 1500 A IFG = 2 A, tr = 0.5 µs IFG = 2 A, tr = 0.5 µs td Delay time ≤ 3.0 µs VD = 0.4⋅VDRM tq Turn-off time ≤ 400 µs VD ≤ 0.67⋅VDRM ITRM = 1500 A, Tj = 125°C dvD/dt = 20V/µs VR > 200 V, diT/dt = -20 A/µs Qrr Recovery charge min 1500 µAs max 3200 µAs Triggering VGT Gate trigger voltage 2.6 V Tj = 25° IGT Gate trigger current 400 mA Tj = 25° VGD Gate non-trigger voltage 0.3 V VD =0.4 x VDRM IGD Gate non-trigger current 10 mA VD = 0.4 x VDRM VFGM Peak forward gate voltage 12 V IFGM Peak forward gate current 10 A VRGM Peak reverse gate voltage 10 V PG Gate power loss 3W ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1020-04 Sep. 01 page 2 of 5 5STP 06D2800 Thermal Tjmax Max. operating junction temperature range Tstg Storage temperature range RthJC Thermal resistance 70 K/kW Anode side cooled junction to case 74 K/kW Cathode side cooled 36 K/kW Double side cooled Thermal resistance case to 15 K/kW Single side cooled heat sink 7.5 K/kW Double side cooled RthCH 125 °C -40…140 °C Analytical function for transient thermal impedance: n ZthJC(t) = å Ri(1 - e -t/τ i ) i =1 i 1 2 3 4 Ri(K/kW) 19.18 9.82 5.45 1.44 τi(s) 0.3862 0.0561 0.0058 0.0024 Fig. 1 Transient thermal impedance junction to case. Fig. 2 On-state characteristics. Fig. 3 On-state characteristics. Tj=125°C, 10ms half sine ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1020-04 Sep. 01 page 3 of 5 5STP 06D2800 Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1020-04 Sep. 01 page 4 of 5 5STP 06D2800 Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of onstate current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 [email protected] www.abbsem.com Doc. No. 5SYA1020-04 Sep. 01