VS-60EPF0.PbF, VS-60CPF0.PbF Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 60 A FEATURES TO-247AC TO-247AC modified • Designed and JEDEC-JESD47 qualified according to • Compliant to RoHS Directive 2002/95/EC Base cathode 2 Base cathode 2 APPLICATIONS • Output rectification and choppers and converters 1 Cathode 3 Anode 1 Anode VS-60EPF.. • Input rectifications where severe conducted EMI should be met 3 Anode VS-60CPF.. 60 A VR 200 V, 400 V, 600 V VF at IF 1.3 V IFSM 830 A trr 70 ns TJ max. 150 °C Diode variation Single die Snap factor 0.5 inverters, restrictions on The VS-60EPF..PbF and VS-60CPF..PbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. TO-247AC modified (2 pins), TO-247AC IF(AV) in DESCRIPTION PRODUCT SUMMARY Package freewheeling The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) Sinusoidal waveform VALUES UNITS 200 to 600 V 60 A 830 IFSM trr 1 A, 100 A/μs VF 30 A, TJ = 25 °C 70 TJ ns 1.1 V - 40 to 150 °C VOLTAGE RATINGS VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-60EPF02PbF, VS-60CPF02PbF 200 300 VS-60EPF04PbF, VS-60CPF04PbF 400 500 VS-60EPF06PbF, VS-60CPF06PbF 600 700 PART NUMBER IRRM AT 150 °C mA 5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 106 °C, 180° conduction half sine wave 60 Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t Revision: 18-Aug-11 10 ms sine pulse, rated VRRM applied 700 10 ms sine pulse, no voltage reapplied 830 10 ms sine pulse, rated VRRM applied 2450 10 ms sine pulse, no voltage reapplied 3460 t = 0.1 ms to 10 ms, no voltage reapplied 34 600 UNITS A A2s A2s Document Number: 94104 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPF0.PbF, VS-60CPF0.PbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 60 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C UNITS 1.3 V 5.0 m 0.88 V 0.1 VR = Rated VRRM TJ = 150 °C VALUES mA 5.0 RECOVERY CHARACTERISTICS PARAMETER SYMBOL VALUES UNITS IF at 60 Apk 180 ns 3.4 A Qrr 25 A/μs 25 °C 0.5 μC S Typical 0.5 Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Snap factor TEST CONDITIONS IFM trr ta tb t dir dt Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation Marking device Revision: 18-Aug-11 UNITS - 40 to 150 °C 0.4 40 Mounting surface, smooth and greased Approximate weight Mounting torque VALUES minimum maximum °C/W 0.2 6 g 0.21 oz. 6 (5) kgf · cm (Ibf · in) 12 (10) Case style TO-247AC modified 60EPF02, 60EPF04, 60EPF06 Case style TO-247AC 60CPF02, 60CPF04, 60CPF06 Document Number: 94104 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPF0.PbF, VS-60CPF0.PbF Series www.vishay.com Vishay Semiconductors 140 60.PF.. Series RthJC (DC) = 0.4 K/W 140 130 Ø Conduction angle 120 110 120° 60° 100 90° 30° 180° Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 0 10 30 20 40 50 DC 80 RMS limit 60 Ø 40 Conduction period 60.PF.. Series TJ = 150 °C 20 70 60 0 20 40 60 80 100 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 150 800 60.PF.. Series RthJC (DC) = 0.4 K/W 140 130 Ø Conduction period 120 110 60° 100 90° 30° At any rated load condition and with rated VRRM applied following surge. 700 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 100 0 90 Initial TJ = 175 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 600 500 400 300 120° 60.PF.. Series DC 180° 200 90 20 0 40 80 60 100 1 Average Forward Current (A) 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 2 - Current Rating Characteristics 900 90 180° 120° 90° 60° 30° 80 70 60 800 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 180° 120° 90° 60° 30° 120 RMS limit 50 40 30 Ø Conduction angle 20 60.PF.. Series TJ = 150 °C 10 0 10 20 30 40 50 60 70 Initial TJ = 195 °C No voltage reapplied Rated VRRM reapplied 700 600 500 400 300 200 0 Maximum non-repetitive surge current versus pulse train duration. 100 0.01 60.PF.. Series 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 18-Aug-11 Document Number: 94104 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPF0.PbF, VS-60CPF0.PbF Series Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 1000 100 TJ = 25 °C TJ = 150 °C 10 60.PF.. Series 1 0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 4 0.20 Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) IFM = 60 A IFM = 30 A 0.15 IFM = 10 A 0.10 IFM = 5 A 60.PF.. Series TJ = 25 °C 60.PF.. Series TJ = 25 °C IFM = 60 A 3 IFM = 30 A 2 IFM = 10 A 1 IFM = 5 A IFM = 1 A IFM = 1 A 0.05 0 0 80 40 160 120 200 0 120 200 160 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 5 0.45 60.PF.. Series TJ = 150 °C 0.35 IFM = 60 A 0.30 IFM = 30 A 0.25 IFM = 10 A 0.20 IFM = 5 A 0.15 60.PF.. Series TJ = 150 °C Qrr - Maximum Reverse Recovery Charge (µC) 0.40 trr - Maximum Reverse Recovery Time (µs) 80 40 IFM = 60 A 4 IFM = 30 A 3 IFM = 10 A 2 IFM = 5 A 1 IFM = 1 A IFM = 1 A 0 0.10 10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Revision: 18-Aug-11 Document Number: 94104 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPF0.PbF, VS-60CPF0.PbF Series www.vishay.com Vishay Semiconductors 25 60.PF.. Series TJ = 25 °C 20 60.PF.. Series TJ = 150 °C IFM = 60 A Irr - Maximum Reverse Recovery Current (A) Irr - Maximum Reverse Recovery Current (A) 25 IFM = 30 A 15 IFM = 10 A 10 IFM = 5 A IFM = 1 A 5 0 IFM = 60 A IFM = 30 A IFM = 10 A IFM = 5 A IFM = 1 A 15 10 5 0 40 0 80 120 160 200 10 dI/dt - Rate of Fall of Forward Current (A/µs) 20 30 40 50 60 70 80 90 100 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C ZthJC - Transient Thermal Impedance (K/W) 20 Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 1 Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 60.PF.. Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 18-Aug-11 Document Number: 94104 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-60EPF0.PbF, VS-60CPF0.PbF Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 60 E P F 06 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (60 = 60 A) 3 - Circuit configuration: E = Single diode, 2 pins C = Single diode, 3 pins 4 - Package: P = TO-247AC/AC modified 5 - Type of silicon: 6 - Voltage code x 100 = VRRM 7 - F = Fast recovery PbF = Lead (Pb)-free 02 = 200 V 04 = 400 V 06 = 600 V LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model Revision: 18-Aug-11 TO-247AC modified www.vishay.com/doc?95253 TO-247AC www.vishay.com/doc?95223 TO-247AC modified www.vishay.com/doc?95255 TO-247AC www.vishay.com/doc?95226 www.vishay.com/doc?95275 Document Number: 94104 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) ΦP E B (2) R/2 N A2 S (Datum B) Ø K M DBM ΦP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb Planting View A - A C 2x e A1 b4 0.10 M C A M (4) E1 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e K L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1