UNISONIC TECHNOLOGIES CO., LTD 60N08 Preliminary Power MOSFET 60 Amps, 80 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N08 is an N-channel power MOSFET adopting UTC’s advanced planar stripe and DMOS technology to provide designers with perfectly high switching speed and minimum on-state resistance. It also can withstand high energy pulse in the avalanche and commutation modes. The UTC 60N08 is applied in low voltage applications such as DC motor control, automotive, and high efficiency switching for DC/DC converters. FEATURES * 60A, 80V, RDS(ON)=0.024Ω @ VGS=10V * High switching speed * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 60N08L-TA3-T 60N08G-TA3-T 60N08L-TF1-T 60N08G-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 1 G G Pin Assignment 2 3 D S D S Packing Tube Tube 1 of 6 QW-R502-521.a 60N08 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 80 V Gate to Source Voltage VGSS ±25 V Continuous ID 60 A Continuous Drain Current Pulsed IDM 176 A Single Pulsed (Note 2) EAS 560 mJ Avalanche Energy 8.5 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 6.5 V/ns TO-220 100 W Power Dissipation PD TO-220F1 70 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER TO-220 Junction to Ambient TO-220F1 TO-220 Junction to Case TO-220F1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 62.5 1.25 1.77 UNIT °C/W °C/W °C/W °C/W 2 of 6 QW-R502-521.a 60N08 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL TEST CONDITIONS BVDSS VGS=0V, ID=250µA ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C VDS=80V, VGS=0V IDSS VDS=64V, TC=150°C VDS=0V ,VGS=+25V IGSS VDS=0V ,VGS=-25V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=30A Forward Transconductance gFS VDS=30V, ID=30A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=64V, VGS=10V, ID=60A Gate-Source Charge QGS (Note 4,5) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=40V, ID=60A, RG=25Ω (Note 4,5) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =60A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=60A, dIF/dt=100A/μs (Note 4) Body Diode Reverse Recovery Charge QRR Notes : 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=0.4mH, IAS=44A, VDD=25V, RG=25Ω, Starting TJ=25°C 3. ISD ≤60A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ=25°C 4. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 80 0.07 1 10 +100 -100 2.0 V V/°C µA µA nA nA 4.0 0.018 0.024 31 V Ω S 1450 1900 520 680 120 155 pF pF pF 50 9.3 25 16.5 200 70 95 nC nC nC ns ns ns ns 65 45 410 150 200 60 176 1.5 73 185 3 of 6 QW-R502-521.a A A V ns μC 60N08 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-521.a 15N65 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 5 of 6 QW-R502-521.a 15N65 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-521.a