Mii 61113 GENERAL PURPOSE (NPN) TRANSISTOR SURFACE MOUNT PACKAGE (2N2369AUB) Features: Applications: • • • • • • • Hermetically sealed Hermetically sealed 3 pin LCC MIL-PRF-19500 screening available OPTOELECTRONIC PRODUCTS DIVISION Analog Switches Signal Conditioning Small Signal Amplifiers High Density Packaging DESCRIPTION The 61113 is a N-P-N, general-purpose switching and amplifier transistor in a 3 pin leadless chip carrier package. All packages are hermetically sealed for high reliability and harsh environments. This device is available custom binned to customer specifications in commercial or screened to MIL-PRF-19500 up to JANS level. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage - VCBO ................................................................................................................................................. 40Vdc Collector-Emitter Voltage - VCEO .............................................................................................................................................. 15Vdc Collector-Emitter Voltage - VCES .............................................................................................................................................. 40Vdc Emitter-Base Voltage - VEBO ................................................................................................................................................... 4.5Vdc Collector Current – IC(Peak) ....................................................................................................................................................... 500mA Continuous Collector Current ................................................................................................................................................ 200mA Maximum Junction Temperature........................................................................................................................................... +200°C Operating Temperature (See part selection guide for actual operating temperature)............................................ -65°C to +125°C Storage Temperature............................................................................................................................................... -65°C to +200°C Lead Soldering Temperature (vapor phase reflow for 30 seconds) .......................................................................................215°C Package Dimensions ORIENTATION KEY Schematic Diagram 0.054[1.37] 0.046 [1.17] 3 PLACES 0.036 [0.91] 0.024 [0.61] 3 C 3 0.105 [2.67] 0.085 [2.16] 2 0.125 [3.18] 0.115 [2.92] E 1 2 0.024 [0.61] 0.016 [0.41] B 1 ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 8 - 14 61113 SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2369AUB) ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO 40 Vdc IC = 10µA, IE = 0 Collector-Emitter Breakdown Voltage BVCEO 40 Vdc IC = 10µA , IB = 0µA IC = 10mA , IB = 0µA Collector-Emitter Sustaining Voltage BVCES 15 Vdc Emitter-Base Breakdown Voltage BVEBO 4.5 Vdc IC = 0, IE = 10µA Collector-Base Cutoff Current ICBO 0.4 µA VCB = 20V, IE = 0 30 µA VCB = 20V, IE = 0, TA = 150°C Collector-Emitter Cutoff Current ICES 0.4 µA VCE = 20V Forward-Current Transfer Ratio hfe - 120 - VCE = 1V, IC = 10mA hfe 20 - VCE = 1V, IC = 100mA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage hfe 20 - VCE = 2V, IC = 100mA hfe4 20 - VCE = 1V, IC = 10mA @ -55ºC hfe6 30 - VCE = 0.35V, IC = 10mA @ -55ºC NOTE 1 VCE (SAT) 0.20 V IC = 10mA, IB = 1mA VCE (SAT) 0.30 V IC = 10mA, IB = 1mA @ +125ºC VCE (SAT) 0.25 V IC = 30mA, IB = 3mA VCE (SAT) 0.50 V IC = 100mA, IB = 10mA 1 1 VBE (SAT) 0.7 0.85 V IC = 10mA, IB = 1mA VBE (SAT) 0.59 - V IC = 10mA, IB = 1mA @ +125ºC 1.02 V IC = 10mA, IB = 1mA @ -55ºC 1.15 V IC = 30mA, IB = 3mA 1.60 V IC = 100mA, IE = 10mA VBE (SAT) VBE (SAT) 1 1 SMALL-SIGNAL CHARACTERISTICS fr MHz VCB = 10V, 100kHz, < f < 1 MHz CIBO 25 pF VEB = 0.5 V, 100kHz, < f < 1 MHz Turn-On Time ton 35 nS VCC = 30V, IC = 150mA, Turn-Off Time toff 300 nS VCC = 30V, IC = 150mA, Current-Gain – Bandwidth Product Input Capacitance 500 (Output Open Capacitance) IB1 = 15mA IB1 = IB2 = 15mA NOTES: Pulse width < 300µs, duty cycle < 2.0%. 1. SELECTION GUIDE PART NUMBER 61113-001 61113-002 61113-003 61113-004 61113-005 PART DESCRIPTION 2N2369AUB PNP transistor, commercial version 2N2369AUB PNP transistor, JAN level screening 2N2369AUB PNP transistor, JANTX level screening 2N2369AUB PNP transistor, JANTXV level screening 2N2369AUB PNP transistor, JANS level screening NOTE: Also available in dual and quad configurations upon request. Can also be supplied in gull wing surface mount versions. MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 8 - 15