7206F High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO I 7206F FEATURES: DESCRIPTION: • 16K x 9-bit organization • RAD-PAK® radiation-hardened against natural space radiation • A total dose hardness: - > 100 krad (Si), depending upon space mission • Excellent Single Event Effect - SELTH: > 100 MeV/mg/cm2 Maxwell Technologies’ 7206F high speed FIFO microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. It is organized such that the data is read in the same sequential order that it was written. Full and Empty flags are provided to prevent overflow and underflow. The expansion logic allows unlimited expansion capability in work size and depth with no timing penalties. Twin address pointers automatically generate internal read and write addresses, and automatically increment with the write and read pin. The 7206F 9-bits wide data are used in data communications applications where a parity bit for error checking is necessary. The retransmit capability allows the read pointer to be reset to its initial position without affecting the write pointer. • • • • • • • • • • • - SEUTH: = 7 MeV/mg/cm2 - SEU saturated cross section: 1.5E-5 cm2/bit Asynchronous Read/Write operation High speed CMOS epi technology Retransmit capability Propagation time (max access time): - 15 ns, 20 ns, 30 ns, 40 ns, 50 ns Status flag: empty, half-full, full Fully expandable in both word depth and width Bi-directional applications Low power Battery back-up operation TTL compatible Package: 28 pin RAD-PAK® flat package 1000572 (858) 503-3300- Fax: (858) 503-3301- www.maxwell.com Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S. 12.19.01 Rev 3 All data sheets are subject to change without notice 1 ©2001 Maxwell Technologies All rights reserved. Memory Logic Diagram 7206F High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO TABLE 1. 7206F PINOUT DESCRIPTION PIN SYMBOL DESCRIPTION 1 W 2-6 I8, I3-I0 7 XI Expansion In 8 FF Full Flag 9 - 13 Q0 - Q3, Q8 Outputs 14 GND Ground 15 R 16 - 19 Q4 - Q7 Outputs 20 XO/HF Expansion Out/Half Full Flag 21 EF Empty Flag 22 RS Reset 23 FL/RT First Load/Retransmit 24 - 27 I7 - I4 Inputs 28 VCC Write Enable Inputs Read Enable Memory Power Supply TABLE 2. 7206F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MIN MAX UNIT Positive Supply Voltage VCC -0.3 7.0 V Input or Output Voltage VIN GND -0.3 VCC +0.3 V Storage Temperature Range TS -65 150 °C Operating Temperature Range TA -55 125 °C TABLE 3. 7206F RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN MAX UNIT Positive Supply Voltage VCC 4.5 5.5 V High Level Input Voltage VIH 2.2 -- V Low Level Voltage VIL -- 0.8 V ΘJC -- 0.93 °C/W TA -55 125 °C Thermal Impedance Operating Temperature Range 1000572 12.19.01 Rev 3 All data sheets are subject to change without notice 2 ©2001 Maxwell Technologies All rights reserved. 7206F High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO TABLE 4. 7206F DC ELECTRICAL CHARACTERISTICS (VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN MAX ------ 165 160 150 140 130 UNIT mA Operating Supply Current -15 -20 -30 -40 -50 ICCOP Standby Supply Current (R = W = RS = FLVRT = VIH) ICCSB -- 5 mA Power Down Current (All Input = VCC) ICCPD -- 400 µA Input Leakage Current (0.4V < VIN < VCC) ILI -- ±1 µA Output Leakage Current (R = VIH, 0.4V < VOUT < VCC) -- ±1 µA Input Low VIL -- 0.8 V Input High Voltage1 VIH 2.2 -- V Output Low Voltage (VCC min, IOL = 8mA) VOL -- 0.4 V Output High Voltage (VCC min, IOH = -2mA) VOH 2.4 -- V Input Capacitance CIN -- 10 pF COUT -- 10 pF MIN MAX UNITS 25 30 40 50 65 ------ ------ 15 20 30 40 50 2 Output Capacitance 2 Memory ILO Voltage1 1. VIH max = VCC + 0.3V. VIL min = -0.3V or -1.0V pulse width 50 ns. 2. Guaranteed by design. TABLE 5. 7206F TIMING CHARACTERISTICS 1 (VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL Read Cycle Read Cycle Time -15 -20 -30 -40 -50 tRC Access Time -15 -20 -30 -40 -50 tA 1000572 12.19.01 Rev 3 ns ns All data sheets are subject to change without notice 3 ©2001 Maxwell Technologies All rights reserved. 7206F High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO TABLE 5. 7206F TIMING CHARACTERISTICS 1 (VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL tRR Read Pulse Width 2 -15 -20 -30 -40 -50 tRPW Read Low to Data Low-Z 3 -15 -20 -30 -40 -50 tRLZ Write HIGH to Data Low-Z 3,4 -15 -20 -30 -40 -50 tWLZ Data Valid from Read High -15 -20 -30 -40 -50 tDV Read High to Data Bus High-Z 3 -15 -20 -30 -40 -50 tRHZ 1000572 12.19.01 Rev 3 MAX 10 10 10 10 15 ------ 15 20 30 40 50 ------ 0 0 5 5 5 ------ 3 3 5 5 5 ------ 5 5 5 5 5 ------ ------ 15 15 20 25 30 UNITS ns ns ns Memory Read Recovery Time -15 -20 -30 -40 -50 MIN ns ns ns All data sheets are subject to change without notice 4 ©2001 Maxwell Technologies All rights reserved. 7206F High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO TABLE 5. 7206F TIMING CHARACTERISTICS 1 (VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN MAX 25 30 40 50 65 ------ 15 20 30 40 50 ------ 10 10 10 10 15 ------ 9 12 18 24 30 ------ 0 0 0 0 5 ------ 25 30 40 50 65 ------ 15 20 30 40 50 ------ UNITS Write Cycle tWC Write Pulse Width 2 -15 -20 -30 -40 -50 tWPW Write Recovery Time -15 -20 -30 -40 -50 tWR Data Set-up Time -15 -20 -30 -40 -50 tDS Data Hold Time -15 -20 -30 -40 -50 tDH ns ns ns Memory Write Cycle Time -15 -20 -30 -40 -50 ns ns Reset Cycle Reset Cycle Time -15 -20 -30 -40 -50 tRSC Reset Pulse Width 2 -15 -20 -30 -40 -50 tRS 1000572 12.19.01 Rev 3 ns ns All data sheets are subject to change without notice 5 ©2001 Maxwell Technologies All rights reserved. 7206F High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO TABLE 5. 7206F TIMING CHARACTERISTICS 1 (VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL Reset Set-up Time 3 -15 -20 -30 -40 -50 tRSS Reset Recovery Time -15 -20 -30 -40 -50 tRSR MIN MAX 20 30 30 50 60 ------ 10 10 10 10 15 ------ 25 30 40 50 65 ------ 15 20 30 40 50 ------ 15 20 30 40 50 ------ 10 10 10 10 15 ------ ------ 25 30 30 50 65 UNITS ns ns Retransmit Cycle tRTC Retransmit Pulse Width 2 -15 -20 -30 -40 -50 tRT Retransmit Set-up Time 3 -15 -20 -30 -40 -50 tRTS Retransmit Recovery Time -15 -20 -30 -40 -50 tRTR ns Memory Retransmit Cycle TIme -15 -20 -30 -40 -50 ns ns ns Flags Reset to EF Low -15 -20 -30 -40 -50 1000572 tEFL 12.19.01 Rev 3 ns All data sheets are subject to change without notice 6 ©2001 Maxwell Technologies All rights reserved. 7206F High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO TABLE 5. 7206F TIMING CHARACTERISTICS 1 (VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL tHFH, tFFH Read Low to EF Low -15 -20 -30 -40 -50 tREF Read High to FF High -15 -20 -30 -40 -50 tRFF Read Pulse Width after EF High -15 -20 -30 -40 -50 tRPE Write High to EF High -15 -20 -30 -40 -50 tWEF Write Low to FF Low -15 -20 -30 -40 -50 tWFF Write Low to HF Flag Low -15 -20 -30 -40 -50 tWHF 1000572 12.19.01 Rev 3 MAX ------ 25 30 30 50 65 ------ 15 20 30 40 50 ------ 17 20 30 40 50 15 20 30 40 50 ------ ------ 15 20 30 40 50 ------ 20 20 30 40 50 ------ 30 30 30 50 65 UNITS ns ns ns Memory Reset to HF/FF High -15 -20 -30 -40 -50 MIN ns ns ns ns All data sheets are subject to change without notice 7 ©2001 Maxwell Technologies All rights reserved. 7206F High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO TABLE 5. 7206F TIMING CHARACTERISTICS 1 (VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL tRHF Write Pulse Width after FF High -15 -20 -30 -40 -50 tWPF Read/Write LOW to XO LOW -15 -20 -30 -40 -50 tXOL Read/Write LOW to XO HIGH -15 -20 -30 -40 -50 tXOH XI Pulse Width -15 -20 -30 -40 -50 tXI XI Recovery Time -15 -20 -30 -40 -50 tXIR XI Set-up Time -15 -20 -30 -40 -50 tXIS MAX ------ 30 30 30 50 65 15 20 30 40 50 ------ ------ 15 20 30 40 50 ------ 15 20 30 40 50 15 20 30 40 50 ------ 10 10 10 10 10 ------ 10 10 10 15 15 ------ UNITS ns ns ns Memory Read High to HF Flag High -15 -20 -30 -40 -50 MIN ns ns ns ns 1. VCC = +5V±10%, TA = +25 °C; use switching test circuit. AC tests are performed with input rise and fall times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and the output load circuit, unless otherwise specified. 1000572 12.19.01 Rev 3 All data sheets are subject to change without notice 8 ©2001 Maxwell Technologies All rights reserved. High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO 7206F 2. Pulse widths less than minimum value are not allowed. 3. Values guaranteed by design, not currently tested. 4. Only applies to read data flow-through mode. FIGURE 1. RESET Memory FIGURE 2. ASYNCHRONOUS WRITE AND READ OPERATION FIGURE 3. FULL FLAG TIMING FROM LAST WRITE TO FIRST READ 1000572 12.19.01 Rev 3 All data sheets are subject to change without notice 9 ©2001 Maxwell Technologies All rights reserved. High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO 7206F FIGURE 4. EMPTY FLAG TIMING FROM LAST READ TO FIRST WRITE FIGURE 5. RETRANSMIT Memory FIGURE 6. EMPTY FLAG TIMING FIGURE 7. FULL FLAG TIMING 1000572 12.19.01 Rev 3 All data sheets are subject to change without notice 10 ©2001 Maxwell Technologies All rights reserved. High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO 7206F FIGURE 8. HALF-FULL FLAG TIMING FIGURE 9. EXPANSION OUT Memory FIGURE 10. EXPANSION IN FIGURE 11. READ DATA FLOW FOR THROUGH MODE 1000572 12.19.01 Rev 3 All data sheets are subject to change without notice 11 ©2001 Maxwell Technologies All rights reserved. High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO 7206F FIGURE 12. WRITE DATA FLOW FOR THROUGH MODE Memory 1000572 12.19.01 Rev 3 All data sheets are subject to change without notice 12 ©2001 Maxwell Technologies All rights reserved. High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO 7206F Memory 28 PIN RAD-PAK® FLAT PACKAGE SYMBOL DIMENSION MIN NOM MAX A 0.129 0.142 0.155 b 0.015 0.017 0.022 c 0.004 0.005 0.009 D -- 0.720 0.740 E 0.400 0.410 0.420 E1 -- -- 0.440 E2 0.180 0.250 -- E3 0.005 0.080 -- e 0.050 BSC L 0.390 0.400 0.410 Q 0.021 0.033 0.045 S1 0.005 0.067 -- N 28 F28-07 Note: All dimensions in inches 1000572 12.19.01 Rev 3 All data sheets are subject to change without notice 13 ©2001 Maxwell Technologies All rights reserved. High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO 7206F Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts. Memory 1000572 12.19.01 Rev 3 All data sheets are subject to change without notice 14 ©2001 Maxwell Technologies All rights reserved. 7206F High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO Product Ordering Options Model Number 7206F F X -XX Option Details Feature Access Time 15 = 15 ns 20 = 20 ns 30 = 30 ns 40 = 40 ns 50 = 50 ns Screening Flow Monolithic S = Maxwell Class S B = Maxwell Class B E = Engineering (testing @ +25°C) I = Industrial (testing @ -55°C, +25°C, +125°C) Package F = Flat Pack Radiation Feature RP = RAD-PAK® package Base Product Nomenclature High-Speed Epi-CMOS (16K x 9Bit) Parallel FIFO 12.19.01 Rev 3 All data sheets are subject to change without notice 15 ©2001 Maxwell Technologies All rights reserved. Memory 1000572 RP