INTEGRATED CIRCUITS DATA SHEET 74ALVC00 Quad 2-input NAND gate Product specification Supersedes data of 2003 Feb 06 2003 May 14 Philips Semiconductors Product specification Quad 2-input NAND gate 74ALVC00 FEATURES DESCRIPTION • Wide supply voltage range from 1.65 to 3.6 V The 74ALVC00 is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. • 3.6 V tolerant inputs/outputs • CMOS low power consumption Schmitt-trigger action at all inputs makes the circuit tolerant for slower input rise and fall times. • Direct interface with TTL levels (2.7 to 3.6 V) • Power-down mode The 74ALVC00 provides the 2-input NAND function. • Latch-up performance exceeds 250 mA • Complies with JEDEC standard: JESD8-7 (1.65 to 1.95 V) JESD8-5 (2.3 to 2.7 V) JESD8B/JESD36 (2.7 to 3.6 V). • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C. SYMBOL tPHL/tPLH PARAMETER propagation delay inputs nA, nB to output nY CONDITIONS TYPICAL UNIT VCC = 1.8 V; CL = 30 pF; RL = 1 kΩ 2.8 ns VCC = 2.5 V; CL = 30 pF; RL = 500 Ω 2.1 ns VCC = 2.7 V; CL = 50 pF; RL = 500 Ω 2.6 ns VCC = 3.3 V; CL = 50 pF; RL = 500 Ω 2.1 ns CI input capacitance 3.5 pF CPD power dissipation capacitance per buffer VCC = 3.3 V; notes 1 and 2 28 pF Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. The condition is VI = GND to VCC. 2003 May 14 2 Philips Semiconductors Product specification Quad 2-input NAND gate 74ALVC00 ORDERING INFORMATION PACKAGE TYPE NUMBER TEMPERATURE RANGE PINS PACKAGE MATERIAL CODE 74ALVC00D −40 to +85 °C 14 SO14 plastic SOT108-1 74ALVC00PW −40 to +85 °C 14 TSSOP14 plastic SOT402-1 74ALVC00BQ −40 to +85 °C 14 DHVQFN14 plastic SOT762-1 FUNCTION TABLE See note 1. INPUT OUTPUT nA nB nY L L H L H H H L H H H L Note 1. H = HIGH voltage level; L = LOW voltage level. PINNING PIN SYMBOL DESCRIPTION 1 1A data input 2 1B data input 3 1Y data output 4 2A data input 5 2B 6 handbook, halfpage 1A 1 14 VCC 1B 2 13 4B data input 1Y 3 12 4A 2Y data output 2A 4 7 GND ground (0 V) 2B 5 10 3B 8 3Y data output 2Y 6 9 3A 9 3A data input GND 7 8 3Y 10 3B data input 11 4Y data output 12 4A data input 13 4B data input 14 VCC supply voltage 2003 May 14 00 11 4Y MNA210 Fig.1 Pin configuration SO14 and TSSOP14. 3 Philips Semiconductors Product specification Quad 2-input NAND gate handbook, halfpage 1A VCC 1 14 74ALVC00 1B 2 13 4B 1Y 3 12 4A 2A 4 11 4Y 2B 5 10 3B 2Y 6 9 3A GND(1) handbook, halfpage A Y B Top view 7 8 GND 3Y MNA211 MNA950 (1) The die substrate is attached to this pad using conductive die attach material. It can not be used as a supply pin or input. Fig.2 Pin configuration DHVQFN14. Fig.3 Logic diagram (one gate). handbook, halfpage handbook, halfpage 1 & 3 & 6 & 8 & 11 2 1 2 1A 1B 4 5 2A 2B 2Y 6 5 9 10 3A 3B 3Y 8 9 1Y 3 4 10 12 13 4A 4B 4Y 11 12 13 MNA212 MNA246 Fig.4 Function diagram. 2003 May 14 Fig.5 IEC logic symbol. 4 Philips Semiconductors Product specification Quad 2-input NAND gate 74ALVC00 RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage 1.65 3.6 V VI input voltage 0 3.6 V VO output voltage VCC = 1.65 to 3.6 V 0 VCC V VCC = 0 V; Power-down mode 0 3.6 V Tamb operating ambient temperature −40 +85 °C tr, tf input rise and fall times VCC = 1.65 to 2.7 V 0 20 ns/V VCC = 2.7 to 3.6 V 0 10 ns/V LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL PARAMETER VCC supply voltage IIK input diode current VI input voltage IOK output diode current VO output voltage IO output source or sink current CONDITIONS VI < 0 VO > VCC or VO < 0 MIN. MAX. UNIT −0.5 +4.6 V − −50 mA −0.5 +4.6 V − ±50 mA notes 1 and 2 −0.5 VCC + 0.5 V Power-down mode; note 2 −0.5 +4.6 V VO = 0 to VCC − ±50 mA ICC, IGND VCC or GND current − ±100 mA Tstg storage temperature −65 +150 °C Ptot power dissipation per package − 500 mW Tamb = −40 to +125 °C; note 3 Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. When VCC = 0 V (Power-down mode), the output voltage can be 3.6 V in normal operation. 3. For SO14 packages: above 70 °C derate linearly with 8 mW/K. For TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K. For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K. 2003 May 14 5 Philips Semiconductors Product specification Quad 2-input NAND gate 74ALVC00 DC CHARACTERISTICS At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER MIN. OTHER TYP.(1) MAX. UNIT VCC (V) Tamb = −40 to +85 °C VIH VIL VOL VOH HIGH-level input voltage − V 1.7 − − V 2 − − V 2.7 to 3.6 1.65 to 1.95 − − 0.35 × VCC V 2.3 to 2.7 − − 0.7 V 2.7 to 3.6 − − 0.8 V IO = 100 µA 1.65 to 3.6 − − 0.2 V IO = 6 mA 1.65 − 0.11 0.3 V IO = 12 mA 2.3 − 0.17 0.4 V IO = 18 mA 2.3 − 0.25 0.6 V IO = 12 mA 2.7 − 0.16 0.4 V IO = 18 mA 3.0 − 0.23 0.4 V IO = 24 mA 3.0 − 0.30 0.55 V IO = −100 µA 1.65 to 3.6 VCC − 0.2 − − V IO = −6 mA 1.65 1.25 1.51 − V IO = −12 mA 2.3 1.8 2.10 − V IO = −18 mA 2.3 1.7 2.01 − V IO = −12 mA 2.7 2.2 2.53 − V IO = −18 mA 3.0 2.4 2.76 − V IO = −24 mA 3.0 2.2 2.68 − V LOW-level input voltage LOW-level output voltage 1.65 to 1.95 0.65 × VCC − 2.3 to 2.7 VI = VIH or VIL HIGH-level output voltage VI = VIH or VIL ILI input leakage current VI = 3.6 V or GND 3.6 − ±0.1 ±5 µA Ioff power OFF leakage current VI or VO = 3.6 V 0.0 − ±0.1 ±10 µA ICC quiescent supply current VI = VCC or GND; IO = 0 3.6 − 0.2 20 µA ∆ICC additional quiescent supply current per input pin VI = VCC − 0.6 V; IO = 0 3.0 to 3.6 − 5 750 µA Note 1. All typical values are measured at Tamb = 25 °C. 2003 May 14 6 Philips Semiconductors Product specification Quad 2-input NAND gate 74ALVC00 AC CHARACTERISTICS TEST CONDITIONS SYMBOL PARAMETER MIN. WAVEFORMS TYP.(1) MAX. UNIT VCC (V) Tamb = −40 to +85 °C tPHL/tPLH propagation delay nA, nB to nY see Figs 6 and 7 1.65 to 1.95 1.0 2.8 4.4 ns 2.3 to 2.7 1.0 2.1 2.8 ns 2.7 1.0 2.6 3.2 ns 3.0 to 3.6 1.0 2.1 3.0 ns Note 1. All typical values are measured at Tamb = 25 °C. AC WAVEFORMS VI handbook, halfpage VM nA, nB input GND tPHL tPLH VOH VM nY output VOL MNA218 INPUT VCC VM VI tr = tf 1.65 to 1.95 V 0.5 × VCC VCC ≤ 2.0 ns 2.3 to 2.7 V 0.5 × VCC VCC ≤ 2.0 ns 2.7 V 1.5 V 2.7 V ≤ 2.5 ns 3.0 to 3.6 V 1.5 V 2.7 V ≤ 2.5 ns VOL and VOH are typical output voltage drop that occur with the output load. Fig.6 Inputs nA, nB to output nY propagation delay times. 2003 May 14 7 Philips Semiconductors Product specification Quad 2-input NAND gate 74ALVC00 VEXT handbook, full pagewidth VCC PULSE GENERATOR VI RL VO D.U.T. CL RT RL MNA616 VCC VEXT CL RL VCC 30 pF 1 kΩ open GND 2 × VCC 2.3 to 2.7 V VCC 30 pF 500 Ω open GND 2 × VCC 2.7 V 2.7 V 50 pF 500 Ω open GND 6V 3.0 to 3.6 V 2.7 V 50 pF 500 Ω open GND 6V 1.65 to 1.95 V VI tPLH/tPHL tPZH/tPHZ tPZL/tPLZ Definitions for test circuit: RL = Load resistor. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. Fig.7 Load circuitry for switching times. 2003 May 14 8 Philips Semiconductors Product specification Quad 2-input NAND gate 74ALVC00 PACKAGE OUTLINES SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 D E A X c y HE v M A Z 8 14 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 7 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 8.75 8.55 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.010 0.057 0.004 0.049 0.01 0.019 0.0100 0.35 0.014 0.0075 0.34 0.16 0.15 0.05 0.028 0.024 0.01 0.01 0.004 0.028 0.012 inches 0.069 0.244 0.039 0.041 0.228 0.016 θ Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT108-1 076E06 MS-012 2003 May 14 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 9 o 8 0o Philips Semiconductors Product specification Quad 2-input NAND gate 74ALVC00 TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 E D A X c y HE v M A Z 8 14 Q (A 3) A2 A A1 pin 1 index θ Lp L 1 7 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) θ mm 1.1 0.15 0.05 0.95 0.80 0.25 0.30 0.19 0.2 0.1 5.1 4.9 4.5 4.3 0.65 6.6 6.2 1 0.75 0.50 0.4 0.3 0.2 0.13 0.1 0.72 0.38 8 0o Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT402-1 2003 May 14 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-18 MO-153 10 o Philips Semiconductors Product specification Quad 2-input NAND gate 74ALVC00 DHVQFN14: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; SOT762-1 14 terminals; body 2.5 x 3 x 0.85 mm A B D A A1 E c detail X terminal 1 index area terminal 1 index area C e1 e 2 6 y y1 C v M C A B w M C b L 1 7 Eh e 14 8 13 9 Dh X 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A(1) max. A1 b c D (1) Dh E (1) Eh e e1 L v w y y1 mm 1 0.05 0.00 0.30 0.18 0.2 3.1 2.9 1.65 1.35 2.6 2.4 1.15 0.85 0.5 2 0.5 0.3 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT762-1 --- MO-241 --- 2003 May 14 11 EUROPEAN PROJECTION ISSUE DATE 02-10-17 03-01-27 Philips Semiconductors Product specification Quad 2-input NAND gate 74ALVC00 If wave soldering is used the following conditions must be observed for optimal results: SOLDERING Introduction to soldering surface mount packages • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). • For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferably be kept: Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. • below 220 °C for all the BGA packages and packages with a thickness ≥ 2.5mm and packages with a thickness <2.5 mm and a volume ≥350 mm3 so called thick/large packages Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. • below 235 °C for packages with a thickness <2.5 mm and a volume <350 mm3 so called small/thin packages. Wave soldering When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. 2003 May 14 12 Philips Semiconductors Product specification Quad 2-input NAND gate 74ALVC00 Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE(1) WAVE BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA not suitable suitable(3) DHVQFN, HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, HVSON, SMS not PLCC(4), SO, SOJ suitable LQFP, QFP, TQFP SSOP, TSSOP, VSO, VSSOP REFLOW(2) suitable suitable suitable not recommended(4)(5) suitable not recommended(6) suitable Notes 1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy from your Philips Semiconductors sales office. 2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 2003 May 14 13 Philips Semiconductors Product specification Quad 2-input NAND gate 74ALVC00 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 May 14 14 Philips Semiconductors Product specification Quad 2-input NAND gate 74ALVC00 NOTES 2003 May 14 15 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613508/02/pp16 Date of release: 2003 May 14 Document order number: 9397 750 11262