23.5–26.5 GHz GaAs MMIC Power Amplifier AA026P2-00 Features Chip Outline ■ Single Bias Supply Operation (6 V) 3.080 ■ 17 dB Typical Small Signal Gain 2.960 ■ 24 dBm Typical P1 dB Output Power at 26.5 GHz 2.068 ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD MT 2010 1.014 0.130 Description 3.230 2.510 1.271 0.605 0.000 0.000 Alpha’s three-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24 dBm and a typical PSAT of 26 dBm at 26.5 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance. A broad range of applications exist in both the commercial and military areas where high power and gain are required. Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Value Operating Temperature (TC) -55°C to +90°C Storage Temperature (TST) -65°C to +150°C Bias Voltage (VD) 7 VDC Power In (PIN) 22 dBm Junction Temperature (TJ) 175°C Electrical Specifications at 25°C (VDS = 6 V) Parameter Condition Drain Current (at Saturation) Symbol Min. IDS 15 Typ.2 Max. Unit 520 700 mA -17 -10 dB -20 -10 Small Signal Gain F = 23.5–26.5 GHz G Input Return Loss F = 23.5–26.5 GHz RLI 17 dB Output Return Loss F = 23.5–26.5 GHz RLO Output Power at 1 dB Gain Compression F = 26.5 GHz P1 dB 23 24 dBm 24 26 dBm dB Saturated Output Power F = 26.5 GHz PSAT Gain at Saturation F = 26.5 GHz GSAT 14 dB ΘJC 17 °C/W Thermal Resistance1 1. Calculated value based on measurement of discrete FET. 2. Typical represents the median parameter value across the specified frequency range for the median chip. Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A 1 23.5–26.5 GHz GaAs MMIC Power Amplifier AA026P2-00 Typical Performance Data 20 30 S21 10 25 -10 POUT (dBm) (dB) 0 S22 -20 S11 -30 20 15 10 5 -40 -50 0 -10 20 21 22 23 24 25 26 27 28 29 30 -7 -4 -1 2 5 8 11 Frequency (GHz) PIN (dBm) Typical Small Signal Performance S-Parameters (VDS = 6 V) Output Characteristics as a Function of Input Drive Level (F = 26.5 GHz, VDS = 6 V) Bias Arrangement 6V .01 µF Circuit Schematic 50 pF RF IN Detail A VDS RF OUT RF IN 6V .01 µF 50 pF SEE DETAIL A RF OUT For biasing on, adjust VDS from zero to the desired value (6 V recommended). For biasing off, reverse the biasing on procedure. VDS 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 12/99A