AF9928N N-Channel Enhancement Mode Power MOSFET Features General Description - Low On-resistance - Capable of 2.5V Gate Drive - Optimal DC/DC battery application The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Product Summary BVDSS (V) 20 rDS(on) (mΩ) 23 ID (A) 5 Pin Descriptions Pin Assignments D1 1 8 D2 S1 2 7 S2 S1 3 6 S2 G1 4 5 G2 Pin Name S1/2 G1/2 D1/2 Description Source Gate Drain TSSOP-8 Ordering information Feature F :MOSFET A X 9928N X X X PN Package Lead Free TS: TSSOP-8 Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Aug 11, 2005 1/5 AF9928N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage at TA=25ºC at TA=70ºC ID Drain Current (Note 1), at VGS=4.5V IDM Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range PD TSTG TJ at TA=25ºC Rating 20 ±12 5 3.5 25 1 0.008 -55 to 150 -55 to 150 Units V V Value 125 Units o C/W A A W W/ºC ºC ºC Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-Ambient (Note 1) 2 o Max. Note 1: Surface mounted on 1 in copper pad of FR4 board, 208 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Electrical Characteristics at TJ=25ºC (unless otherwise specified) Symbol BVDSS ∆BVDSS /∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=4.5V, ID=5A VGS=2.5V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=20V, VGS=0V, TJ=25ºC VDS=20V, VGS=0V, TJ=70ºC VGS=±12V ID=5A, VDS=10V, VGS=4.5V VDS=10V, ID=1A, RG=3.3Ω, VGS=4.5V RD=10Ω VGS=0V, VDS=20V, f=1.0MHz Min. 20 Typ. - Max. - Units V - 0.02 - V/oC 0.5 - 21 23 29 - mΩ mΩ V S - - 1 uA - - 25 uA - 15.9 1.5 7.4 6.2 9 30 11 530 245 125 ±10 - uA nC nC nC ns ns ns ns pF pF pF Test Conditions Min. Typ. Max. Units VD=VG=0V, VS=1.2V - - 0.83 A TJ=25ºC , IS=5A, VGS=0V - - 1.2 V Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current (Body Diode) Forward On Voltage (Note 3) Note3: Pulse width ≤ 300us, duty cycle ≤ 2%. Anachip Corp. www.anachip.com.tw Rev. 1.1 2/5 Aug 11, 2005 AF9928N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Anachip Corp. www.anachip.com.tw Rev. 1.1 3/5 Aug 11, 2005 AF9928N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Anachip Corp. www.anachip.com.tw Rev. 1.1 4/5 Aug 11, 2005 AF9928N N-Channel Enhancement Mode Power MOSFET Marking Information TSSOP-8L ( Top View ) Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Logo 9928N AA Y W X Part Number Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 ~ Factory code Package Information Package Type: TSSOP-8L E E1 D L θ DETAIL A B C A1 A e DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A A1 B C D E E1 L e θ Dimensions In Millimeters Min. Nom. Max. 1.20 0.05 0.15 0.19 0.30 0.127 2.90 3.00 3.10 6.20 6.40 6.60 4.30 4.40 4.50 0.45 0.60 0.75 0.65 REF. 0o -8o Anachip Corp. www.anachip.com.tw Rev. 1.1 5/5 Aug 11, 2005