ADVANCED LINEAR DEVICES, INC. ALD1106/ALD1116 QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 offer high input impedance and negative current temperature coefficient. The transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for precision analog switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD1106/ALD1116 are building blocks for differential amplifier input stages, transmission gates, and multiplexer applications, current sources and many precision analog circuits. FEATURES • Low threshold voltage of 0.7V • Low input capacitance • Low Vos 2mV typical • High input impedance -- 1014Ω typical • Negative current (IDS) temperature coefficient • Enhancement-mode (normally off) • DC current gain 109 • Low input and output leakage currents • RoHS compliant • • • • • • • • Precision current mirrors Precision current sources Voltage choppers Differential amplifier input stage Voltage comparator Data converters Sample and Hold Analog signal processing PIN CONFIGURATION ALD1116 DN1 1 8 DN2 GN1 2 7 GN2 SN1 3 6 SN2 V- 4 5 V+ TOP VIEW SAL, PAL, DA PACKAGES 1 ALD1106 ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS)) 0°C to +70°C APPLICATIONS Operating Temperature Range* 0°C to +70°C -55°C to +125°C DN1 1 14 DN2 GN1 2 13 GN2 SN1 3 12 SN2 V- 4 11 V+ 8-Pin SOIC Package 8-Pin Plastic Dip Package 8-Pin CERDIP Package ALD1116SAL ALD1116PAL ALD1116DA DN4 5 10 DN3 14-Pin SOIC Package 14-Pin Plastic Dip Package 14-Pin CERDIP Package GN4 6 9 GN3 SN4 7 8 SN3 ALD1106SBL ALD1106PBL ALD1106DB TOP VIEW SBL, PBL, DB PACKAGES * Contact factory for leaded (non-RoHS) or high temperature versions. BLOCK DIAGRAM BLOCK DIAGRAM ALD1116 ALD1106 V+ (5) V+ (11) DN2 (14) DN1 (1) ~ GN2 (13) GN3 (9) GN1 (2) SN1 (3) V- (4) SN2 (12) DN1 (1) DN4 (5) DN3 (10) GN4 (6) SN3 (8) V- (4) SN4 (7) ~ DN2 (8) GN1 (2) GN2 (7) SN1 (3) V- (4) SN2 (6) Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS Gate-source voltage, VGS Power dissipation Operating temperature range SAL, PAL, SBL, PBL packages DA, DB packages Storage temperature range Lead temperature, 10 seconds CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. 10.6V 10.6V 500mW 0°C to +70°C -55°C to +125°C -65°C to +150°C +260°C OPERATING ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified ALD1106 Parameter Symbol Gate Threshold Voltage VT Offset Voltage VGS1-VGS2 VOS Gate Threshold Temperature Drift 2 On Drain Current Transconductance ALD1116 Test Min Typ Max Min Typ Max Unit 0.4 0.7 1.0 0.4 0.7 1.0 V IDS = 1.0µA VGS = VDS 2 10 2 10 mV IDS = 10µA VGS = VDS TCVT -1.2 -1.2 mV/°C Conditions IDS (ON) 3.0 4.8 3.0 4.8 mA VGS = VDS = 5V GIS 1.0 1.8 1.0 1.8 mmho VDS = 5V IDS= 10mA Mismatch ∆Gfs 0.5 0.5 % Output Conductance GOS 200 200 µmho VDS = 5V IDS = 10mA Ω VDS = 0.1V VGS = 5V % VDS = 0.1V VGS = 5V V IDS = 1.0µA VGS = 0V 350 Drain Source RDS (ON) On Resistance Drain Source On Resistence Mismatch ∆DS (ON) Drain Source Breakdown Voltage BVDSS 500 350 0.5 500 0.5 12 12 Off Drain Current 1 IDS (OFF) 10 400 4 10 400 4 pA nA VDS =12V VGS = 0V TA = 125°C Gate Leakage Current IGSS 0.1 10 1 0.1 10 1 pA nA VDS = 0V VGS = 12V TA = 125°C Input Capacitance 2 CISS 1 3 1 3 pF Notes: 1 2 Consists of junction leakage currents Sample tested parameters ALD1106/ALD1116 Advanced Linear Devices 2 of 11 TYPICAL PERFORMANCE CHARACTERISITCS LOW VOLTAGE OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS VGS = 12V VBS = 0V TA = 25°C 10V 15 8V 10 6V 5 4V 2V 0 0 2 4 6 VBS = 0V TA = 25°C DRAIN SOURCE CURRENT (µA) DRAIN SOURCE CURRENT (mA) 1000 20 8 10 500 6V 4V 2V 0 -500 -1000 -160 12 -80 DRAIN SOURCE VOLTAGE (V) 80 160 TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS 20 20 IDS = 10mA 5 TA = +25°C TA = +125°C VGS = VDS TA = 25°C DRAIN SOURCE CURRENT (µA) VBS = 0V f = 1KHz 10 2 1 0.5 15 VBS = 0V 0 2 4 6 -6V -8V -10V 5 -12V 0 8 10 12 0 0.8 1.6 2.4 3.2 DRAIN SOURCE VOLTAGE (V) GATE SOURCE VOLTAGE (V) DRAIN SOURCE ON RESISTANCE RDS (ON) vs. GATE SOURCE VOLTAGE OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE 100 VDS = 0.2V VBS = 0V 10 TA = +125°C 1 TA = +25°C 0.1 -4V -2V 10 IDS = 1mA 0.2 OFF DRAIN SOURCE CURRENT (pA) FORWARD TRANSCONDUCTANCE (mmho) 0 DRAIN SOURCE VOLTAGE (mV) FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE DRAIN SOURCE ON RESISTANCE (KΩ) VGS = 12V 0 2 1000 VDS = +12V VGS = VBS = 0V 100 10 1 4 6 8 10 12 GATE SOURCE VOLTAGE (V) ALD1106/ALD1116 4.0 -50 -25 0 +25 +50 +75 +100 +125 AMBIENT TEMPERATURE (°C) Advanced Linear Devices 3 of 11 TYPICAL APPLICATIONS CURRENT SOURCE MIRROR CURRENT SOURCE WITH GATE CONTROL V+ = +5V V+ = +5V 1/2 ALD1107 or ALD1117 1/2 ALD1107 or ALD1117 V+ = +5V Q3 ISET Q4 Q3 Q4 RSET ISET I SOURCE Q1 Digital Logic Control of Current Source ON Q2 I SOURCE = ISET = V+ -Vt RSET ~ = 4 RSET 1/2 ALD1106 or ALD1116 Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET CURRENT SOURCE MULTIPLICATION V+ = +5V PMOS PAIR ISET Q1 Q2 NMOS PAIR 1/2 ALD1106 or ALD1116 ISOURCE = ISET x N Q1 QSET Q2 Q3 QN VIN- Current Source Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET ALD1106/ALD1116 RSET Q4 VOUT VIN+ 1/4 ALD1106 or 1/2 ALD1116 Q1 : N - Channel MOSFET Q3,Q4 : P - Channel MOSFET 1/2 ALD1107 or ALD1117 Q3 Q1 OFF DIFFERENTIAL AMPLIFIER V+ ISOURCE RSET QSET, Q1..QN: ALD1106 or ALD1116 N - Channel MOSFET Advanced Linear Devices 4 of 11 TYPICAL APPLICATIONS (cont.) BASIC CURRENT SOURCES P- CHANNEL CURRENT SOURCE N- CHANNEL CURRENT SOURCE V+ = +5V V+ = +5V 1/2 ALD1107 or ALD1117 RSET ISET ISOURCE 8 Q2 8 3 5 6 Q1 2 7 3 2 Q4 5 1 I SOURCE ISET 1/2 ALD1106 or ALD1116 ISOURCE = ISET = 7 6 Q3 V+ - Vt RSET V+ - 1.0 ~ ~ = = RSET RSET 4 RSET Q3, Q4: P - Channel MOSFET Q1, Q2 : N - Channel MOSFET CASCODE CURRENT SOURCES V+ = +5V V+ = +5V ALD1107 ISET RSET ISOURCE Q4 Q1 Q2 Q3 Q4 Q3 Q2 Q1 ISET ISOURCE RSET ALD1106 ISOURCE = ISET = ~ = 3 RSET Q1, Q2, Q3, Q4: P - Channel MOSFET (ALD1102 or ALD1103) Q1, Q2, Q3, Q4: N - Channel MOSFET (ALD1101 or ALD1103) ALD1106/ALD1116 V+ - 2Vt RSET Advanced Linear Devices 5 of 11 SOIC-8 PACKAGE DRAWING 8 Pin Plastic SOIC Package E Millimeters Dim S (45°) D A Min 1.35 Max 1.75 Min 0.053 Max 0.069 A1 0.10 0.25 0.004 0.010 b 0.35 0.45 0.014 0.018 C 0.18 0.25 0.007 0.010 D-8 4.69 5.00 0.185 0.196 E 3.50 4.05 0.140 0.160 1.27 BSC e A A1 e Inches 0.050 BSC H 5.70 6.30 0.224 0.248 L 0.60 0.937 0.024 0.037 ø 0° 8° 0° 8° S 0.25 0.50 0.010 0.020 b S (45°) H L ALD1106/ALD1116 C ø Advanced Linear Devices 6 of 11 PDIP-8 PACKAGE DRAWING 8 Pin Plastic DIP Package Millimeters E E1 D S A2 A1 e b A L Dim Min Max Min Max A 3.81 5.08 0.105 0.200 A1 0.38 1.27 0.015 0.050 A2 1.27 2.03 0.050 0.080 b 0.89 1.65 0.035 0.065 b1 0.38 0.51 0.015 0.020 c 0.20 0.30 0.008 0.012 D-8 9.40 11.68 0.370 0.460 E 5.59 7.11 0.220 0.280 E1 7.62 8.26 0.300 0.325 e 2.29 2.79 0.090 0.110 e1 7.37 7.87 0.290 0.310 L 2.79 3.81 0.110 0.150 S-8 1.02 2.03 0.040 0.080 0° 15° 0° 15° ø b1 Inches c e1 ALD1106/ALD1116 ø Advanced Linear Devices 7 of 11 CERDIP-8 PACKAGE DRAWING 8 Pin CERDIP Package E E1 Millimeters D A1 s A L L2 b b1 e L1 Min Inches Dim A 3.55 Max 5.08 Min 0.140 Max 0.200 A1 1.27 2.16 0.050 0.085 b 0.97 1.65 0.038 0.065 b1 0.36 0.58 0.014 0.023 C 0.20 0.38 0.008 0.015 D-8 -- 10.29 -- 0.405 E 5.59 7.87 0.220 0.310 E1 7.73 8.26 0.290 0.325 e 2.54 BSC 0.100 BSC e1 7.62 BSC 0.300 BSC L 3.81 5.08 0.150 0.200 L1 3.18 -- 0.125 -- L2 0.38 1.78 0.015 0.070 S -- 2.49 -- 0.098 Ø 0° 15° 0° 15° C e1 ALD1106/ALD1116 ø Advanced Linear Devices 8 of 11 SOIC-14 PACKAGE DRAWING 14 Pin Plastic SOIC Package Millimeters E S (45°) Dim A Min 1.35 Max 1.75 Min 0.053 Max 0.069 A1 0.10 0.25 0.004 0.010 b 0.35 0.45 0.014 0.018 C 0.18 0.25 0.007 0.010 D-14 8.55 8.75 0.336 0.345 E 3.50 4.05 0.140 0.160 1.27 BSC e D A Inches 0.050 BSC H 5.70 6.30 0.224 0.248 L 0.60 0.937 0.024 0.037 ø 0° 8° 0° 8° S 0.25 0.50 0.010 0.020 A1 e b S (45°) H L ALD1106/ALD1116 C ø Advanced Linear Devices 9 of 11 PDIP-14 PACKAGE DRAWING 14 Pin Plastic DIP Package Millimeters E E1 D S A2 A1 A L Inches Dim A Min Max Min 3.81 5.08 0.105 Max 0.200 A1 0.38 1.27 0.015 0.050 A2 1.27 2.03 0.050 0.080 b 0.89 1.65 0.035 0.065 b1 0.38 0.51 0.015 0.020 c 0.20 0.30 0.008 0.012 D-14 17.27 19.30 0.680 0.760 E 5.59 7.11 0.220 0.280 E1 7.62 8.26 0.300 0.325 e 2.29 2.79 0.090 0.110 e1 7.37 7.87 0.290 0.310 L 2.79 3.81 0.110 0.150 S-14 1.02 2.03 0.040 0.080 ø 0° 15° 0° 15° e b b1 c e1 ALD1106/ALD1116 ø Advanced Linear Devices 10 of 11 CERDIP-14 PACKAGE DRAWING 14 Pin CERDIP Package Millimeters E E1 D A1 s A L L1 L2 b b1 e Inches Dim A Min Max Min Max 3.55 5.08 0.140 0.200 A1 1.27 2.16 0.050 0.085 b 0.97 1.65 0.038 0.065 b1 0.36 0.58 0.014 0.023 C 0.20 0.38 0.008 0.015 D-14 -- 19.94 -- 0.785 E 5.59 7.87 0.220 0.310 E1 7.73 8.26 0.290 0.325 e 2.54 BSC 0.100 BSC e1 7.62 BSC 0.300 BSC L 3.81 5.08 0.150 0.200 L1 3.18 -- 0.125 -- L2 0.38 1.78 0.015 0.070 S -- 2.49 -- 0.098 Ø 0° 15° 0° 15° C e1 ALD1106/ALD1116 ø Advanced Linear Devices 11 of 11