AME, Inc. AME8816 1.5A CMOS LDO n General Description n Functional Block Diagram (Fixed Versions) The AME8816 family of positive, linear regulators feature low quiescent current (45µA typ.) with low dropout voltage, making them ideal for battery applications. IN OUT Output voltages are set at the factory and trimmed to 1.5% accuracy. Overcurrent Shutdown Thermal Shutdown R1 These rugged devices have both Thermal Shutdown, and Current Fold-back to prevent device failure under the "Worst" of operating conditions. BYPASS AMP In applications requiring a low noise, regulated supply, place a 1000pF capacitor between Bypass and Ground. EN The AME8816 is stable with an output capacitance of 4.7µF or greater. R2 1.242V GND n Features n Functional Block Diagram (Adjustable Version) l Very Low Dropout Voltage l Guaranteed 1.5A Output l Accurate to within 1.5% l 45µA Quiescent Current Typically l Over-Temperature Shutdown l Current Limiting l Short Circuit Current Fold-back l Noise Reduction Bypass Capacitor (Fixed Versions) l Power-Saving Shutdown Mode l Space-Saving DDPAK-5 Package l 6 Factory Pre-set Output Voltages l Low Temperature Coefficient l Adjustable Version OUT IN Overcurrent Shutdown Thermal Shutdown R1 AMP (external) EN ADJ 1.242V R2 (external) GND n Typical Application n Applications l l l l l OUT IN OUT IN AME8816 Instrumentation Portable Electronics Wireless Devices PC Peripherals Battery Powered Widgets BYP C1 5V 1 µF C2 1nF GND EN C3 4.7µF 1 AME, Inc. 1.5A CMOS LDO AME8816 n Pin Configuration TO-263(DDPAK-5) Top View AME8816 AEDVXXX YYWW 1 2 3 4 1. 2. 3. 4. 5. 5 AME8816 BEDVADJ YYWW EN VIN GND VOUT BYP 1 2 3 4 1. 2. 3. 4. 5. 5 EN VIN GND VOUT ADJ 8 2 8816 AEHAXXX YYWW 7 4 5 1 8 2 8816 CEHAADJ YYWW 7 3 4 2 6 O 3 6 5 1. 2. 3. 4. 5. 6. 7. 8. BYP GND GND EN VIN GND GND VOUT 1. 2. 3. 4. 5. 6. 7. 8. EN VIN VOUT ADJ GND GND GND GND 1 O 1 O SO-8 Top View 8 2 8816 BEHAADJ YYWW 7 3 4 6 5 1. 2. 3. 4. 5. 6. 7. 8. ADJ GND GND EN VIN GND GND VOUT AME, Inc. AME8816 1.5A CMOS LDO n AME8816 Ordering Information Package Type VOUT DDPAK-5 SO-8 1.50 AME8816AEDV150 AME8816AEHA150 1.80 AME8816AEDV180 AME8816AEHA180 2.50 AME8816AEDV250 AME8816AEHA250 3.30 AME8816AEDV330 AME8816AEHA330 4.75 AME8816AEDV475 AME8816AEHA475 5.00 AME8816AEDV500 AME8816AEHA500 ADJ AME8816BEDVADJ AME8816BEHAADJ ADJ AME8816CEHAADJ Please consult AME sales office or authorized Rep./Distr. For other output voltage and package type or pinout availability. 3 AME, Inc. 1.5A CMOS LDO AME8816 n Absolute M aximum Ratings: Parameter Maximum Unit 8 V Output Current P D / (V IN - V O) mA Output Voltage GND - 0.3 to V IN + 0.3 V Input Voltage ESD Classification B Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device. n Recommended operating Conditions: Parameter Rating Ambient Temperature Range Junction Temperature Unit -40 to +85 o C -40 to +125 o C n T hermal Information Parameter Unit TO-263 (DDPAK-5) 5 SO-8 20** TO-263 (DDPAK-5) 3.00 SO-8 2.50 W Maximum Junction Temperature 150 o C Maximum Lead Temperature ( 10 Sec) 300 o C Thermal Resistance (θjc ) Internal Power Dissipation (P D ) (∆ T = 100oC)* * Assuming a heat sink capable of twice times (θjc ) ** Estimated 4 Maximum o C/W AME, Inc. AME8816 1.5A CMOS LDO n Electrical Specifications V IN = V O(nom) + 2V , V EN = V IN , T A = 25 o C unles s otherwis e noted P a ra m e te r Input V oltage V IN O utput V oltage A c c urac y VO Dropout V oltage Te st Con dition S ym b ol V D R OPOU T M in V EN = V EH m in, IO = 1m A Typ Max Un its Note 1 7 V -1.5 1.5 % 1.5V < V O (N O M)< = 2.0V IO = 1.5A V O = V O N O M -2.0% 1300 S ee c hart 2.0V < V O (N O M)< = 2.8V O utput Current IO V O > 1.2V 1500 Current Lim it ILIM V O > 1.2V 1500 S hort Circ uit Current ISC Q uies c ent Current IQ M inim un Load Current (For A DJ Option) IMI N G round P in Current IG N D Line Regulation Load Regulation RE G LIN E 800 mA 2000 mA V O < 0.4V 750 mA IO = 0m A 45 70 1 IO = 1m A to 1.5A IO = 1m A V IN = V O + 1 to V O + 2 RE G LO AD mV 600 2.8V < V O (N O M) mA µA 45 V O < 2.0V -0.15 4.0 > V O > = 2.0V -0.1 4.0V < = V O -0.4 IO = 1m A to 1.5A -1 µA 0.02 0.2 0.15 % 0.1 % 0.4 % 1 % O ver Tem erature S hutdown O TS 150 o O ver Tem erature Hy s teris is O TH 30 o V O Tem perature Coeffic ient TC 30 ppm / o C 1 µA A DJ Input B ias Current IAD J A DJ Referenc e V oltage V R EF P ower S upply Rejec tion P ower S upply Rejec tion P S RR P S RR V IN = 5V , V AD J = 1.242V 1.223 IO = 100m A C O = 4.7 µ F c eram ic 1.242 f= 1k Hz 50 f= 10k Hz 20 f= 100k Hz 15 IO = 100m A f= 1k Hz 75 C O = 4.7 µ F c eram ic f= 10k Hz 55 C BY P = 0.01 µ F f= 100k Hz 30 1.261 C C V dB dB O utput V oltage Nois e eN f= 10Hz to 100k Hz IO = 10m A ,C BY P = 0 µ F Co= 4.7 µ F 30 µ V rm s O utput V oltage Nois e eN f= 10Hz to 100k Hz IO = 10m A ,C BY P = 0.01 µ F Co= 4.7 µ F 30 µ V rm s E N Input Thres hold V EH 2.0 V in V V EL 0 0.4 V E N Input B ias Current S hutdown S upply Current IEH V IN = 7V 0.1 µA IEL V EN = 0V , V IN = 7V 0.5 µA ISD V IN = 5V , V O = 0V , V EN = 0V 2 µA 0.5 Note1.V IN (m in) = V O U T+ V D R OPOU T Note2.V O(nom ) : nom inal output voltage of fix ed vers ion 5 AME, Inc. 1.5A CMOS LDO AME8816 n Detailed Description The AME8816 family of CMOS regulators contain a PMOS pass transistor, voltage reference, error amplifier, over-current protection, and thermal shutdown. The P-channel pass transistor receives data from the error amplifier, over-current shutdown, and thermal protection circuits. During normal operation, the error amplifier compares the output voltage to a precision reference. Over-current and Thermal shutdown circuits become active when the junction temperature exceeds 140oC, or the current exceeds 2.2A. During thermal shutdown, the output voltage remains low. Normal operation is restored when the junction temperature drops below 120oC. The AME8816 behaves like a current source when the load reaches 2.2A. However, if the load impedance drops below 0.3 ohms, the current drops back to 600mA to prevent excessive power dissipation. Normal operation is restored when the load resistance exceeds 0.75 ohms. n External Capacitors The AME8816 is stable with an output capacitor to ground of 4.7µF or greater. Ceramic capacitors have the lowest ESR, and will offer the best AC performance. Conversely, Aluminum Electrolytic capacitors exhibit the highest ESR, resulting in the poorest AC response. Unfortunately, large value ceramic capacitors are comparatively expensive. One option is to parallel a 0.1µF ceramic capacitor with a 10µF Aluminum Electrolytic. The benefit is low ESR, high capacitance, and low overall cost. A second capacitor is recommended between the input and ground to stabilize Vin. The input capacitor should be at least 0.1µF to have a beneficial effect. A third capacitor can be connected between the BYPASS pin and GND. This capacitor can be a low cost Polyester Film variety between the value of 0.001 ~ 0.01µF. A larger capacitor improves the AC ripple rejection, but also makes the output come up slowly. This "Soft" turn-on is desirable in some applications to limit turn-on surges. 6 All capacitors should be placed in close proximity to the pins. A "Quiet" ground termination is desirable. This can be achieved with a "Star" connection. n Enable When pulled low, the PMOS pass transistor shuts off, and all internal circuits are powered down. In this state, the quiescent current is less than 1µA. This pin behaves much like an electronic switch. 100Kohm resistor is necessary between VEN source and EN pin when VEN is higher than VIN. Note: There is no internal pull-up for EN PIN. n Adjustable Version The adjustable version uses external feedback resistors to generate an output voltage anywhere from 1.5V to 5.0V. Vadj is trimmed to 1.242V and VOUT is given by the equation: VOUT = Vadj ( 1 + R1 / R2 ) Feedback resistors R1 and R2 should be high enough to keep quiescent current low, but increasing R1 + R2 will reduce stability. In general, R1 and R2 in the 10’s of kΩ will produce adequate stability, given reasonable layout precautions. To improve stability characteristics, keep AME, Inc. AME8816 Dropout Voltage vs. I L O A D V O U T= 1 I L O A D =1.5A 1.5 1.8 0.8 2.0 0.6 2.1 0.4 2.8 0.2 3.3 0 0 0.3 0.6 0.9 1.2 Dropout Voltage vs. V OUT 1 Dropout Voltage (V) 1.2 Dropout Voltage (V) 1.5A CMOS LDO 1.5 0.8 0.6 I L O A D =1.0A 0.4 I L O A D =0.5A 0.2 0 1.8 0 I LOAD (A) 39 45 µA) Ground Current (µ Quiescent Current @ 5V (uA) 50 37 35 33 31 29 27 25 25 6 8 Ground Current vs. V IN 41 -5 4 V O U T (V) Quiescent Current vs. Temperature -45 2 55 85 115 0 Temperature ( C) 40 35 I O U T = 140mA V O U T = 1.5V 30 25 20 15 10 2 3 4 5 6 7 8 V IN (V) Ground Current vs. Load Current µA) Ground Current (µ 38.5 38 37.5 V IN = 2.5V V OUT = 1.5V 37 36.5 36 35.5 35 34.5 0 0.25 0.5 0.75 1 Load Current (mA) 1.25 1.5 7 AME, Inc. 1.5A CMOS LDO AME8816 V OUT vs. Temperature (2.5V) Load Regulation vs. Temperature 0.30 2.495 Load Regulation (%) Output Voltage (V) 2.500 2.490 2.485 2.480 2.475 -45 -5 25 55 85 0.25 0.20 0.15 0.10 0.05 0.00 115 -45 0 Temperature ( C) 400 Dropout Voltage @ 1.5A (mV) 350 300 250 150 100 55 85 115 1.244 1.243 1.242 1.241 1.240 1.239 1.238 1.237 50 1.236 0 0.3 0.6 0.9 1.2 Load Current (A) 8 115 0 C 85 0 C 55 0 C 25 0 C -5 0 C -45 0 C 200 25 Te mpe rature (0C) AME8816BEHA VADJ vs Temperature VADJ (V) Dropout Voltage vs. Load Current (2.5V) -5 1.5 1.235 -45 -5 25 55 Temperature (0C) 85 115 AME, Inc. AME8816 1.5A CMOS LDO Load Step 40mA to 1.5A VOUT 10mV/DIV ILOAD 1A/DIV VOUT (50mV/DIV) Transient Line Response VIN (2V/DIV) C IN = 4.7µF C O U T = 4.7µF T R = T F = 1µS VOUT = 1.5V 0V µS/DIV) Time (20µ Time 500 µS/DIV Current Limit Vs. V IN Current Limit Response 3 2.8 0V IL I M IS C 0A Current Limit (A) VOUT 1V/DIV V I N = 5V C I N = 4.7µF C O U T = 4.7µF ILOAD 1A/DIV 0A C IN = 4.7µF C O U T = 4.7µF V IN = 4.0V V O U T = 1.8V C I N = 4.7µF C O U T = 4.7µF V O U T = 1.8V 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 2 Time 1mS/DIV 3 4 5 6 7 8 V IN (V) Short Circuit Current VS. V IN IOUT 1A/DIV 1.4 Overtemperature Shutdown C I N = 4.7µF C O U T = 4.7µF 1.2 1 0.8 VOUT 1V/DIV Short Circuit Current (A) 1.6 0.6 0.4 0.2 0A V I N = 4V C I N = 4.7µF C O U T = 4.7µF 0V 0 2 3 4 5 V IN (V) 6 7 8 Time 100mS/DIV 9 AME, Inc. 1.5A CMOS LDO AME8816 Stability vs. ESR vs I LOAD 10000 Stability vs. ESR vs I LOAD 10000 Unstable Region Unstable Region 1000 C L =5µF 100 10 1 Stable Region 0.1 0 250 Untested Region 500 750 1000 1250 1 Stable Region 1500 Unstable Region 1000 100 C L =10µF 10 1 Stable Region 0.1 0.01 Untested Region 0.001 0 250 500 750 1000 ILOAD (mA) 0 250 500 750 1000 ILOAD (mA) Stability vs. ESR vs I L O A D 10000 Untested Region 0.01 ILOAD (mA) Ω) CLESR (Ω 10 0.1 0.01 10 C L =2 µF 100 Ω) CLESR (Ω CLESR (Ω Ω) 1000 1250 1500 1250 1500 AME, Inc. AME8816 1.5A CMOS LDO n External Resistor Divider Table R1(kohm) Vout 1.00 2.00 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10 21.41 11.50 7.86 5.97 4.81 4.03 3.47 3.04 2.71 2.44 2.23 2.04 1.89 1.75 1.64 1.54 1.45 1.37 1.30 1.23 1.17 1.12 1.07 1.03 0.99 0.95 0.91 0.88 0.85 0.82 0.80 0.77 0.75 0.73 0.71 0.69 0.67 42.83 23.00 15.72 11.94 9.63 8.06 6.94 6.09 5.42 4.89 4.45 4.09 3.78 3.51 3.28 3.07 2.90 2.74 2.59 2.46 2.35 2.24 2.15 2.06 1.97 1.90 1.83 1.76 1.70 1.65 1.59 1.54 1.50 1.45 1.41 1.37 1.34 5.00 10.00 20.00 50.00 100.00 200.00 R2(kohm)=(1.242*R1(kohm))/(Vout-1.242) 107.07 57.50 39.30 29.86 24.07 20.16 17.35 15.22 13.56 12.22 11.13 10.21 9.44 8.77 8.19 7.69 7.24 6.84 6.48 6.16 5.87 5.60 5.36 5.14 4.94 4.75 4.57 4.41 4.26 4.12 3.99 3.86 3.75 3.64 3.53 3.43 3.34 214.14 115.00 78.61 59.71 48.14 40.32 34.69 30.44 27.12 24.45 22.26 20.43 18.88 17.54 16.39 15.37 14.48 13.68 12.96 12.32 11.74 11.21 10.73 10.28 9.87 9.50 9.15 8.82 8.52 8.24 7.97 7.72 7.49 7.27 7.06 6.87 6.68 428.28 1070.69 230.00 575.00 157.22 393.04 119.42 298.56 597.55 96.28 240.70 481.68 80.65 201.62 403.44 69.39 173.46 347.07 60.88 152.21 304.52 54.24 135.59 271.27 48.90 122.24 244.56 44.52 111.29 222.64 40.86 102.14 204.33 37.75 94.38 188.80 35.08 87.71 175.46 32.77 81.93 163.88 30.74 76.86 153.74 28.95 72.38 144.78 27.36 68.39 136.81 25.93 64.82 129.67 24.64 61.61 123.23 23.48 58.70 117.41 22.42 56.05 112.11 21.45 53.63 107.27 20.56 51.41 102.83 19.75 49.36 98.74 18.99 47.48 94.97 18.29 45.73 91.47 17.64 44.11 88.22 17.04 42.59 85.19 16.47 41.18 82.37 15.94 39.86 79.73 15.45 38.62 77.25 14.98 37.45 74.92 14.54 36.36 72.72 14.13 35.32 70.65 13.74 34.35 68.70 13.37 33.42 66.85 962.79 806.49 693.85 608.82 542.36 488.98 445.16 408.55 377.51 350.85 327.70 307.43 289.51 273.57 259.29 246.43 234.78 224.19 214.51 205.63 197.46 189.91 182.92 176.42 170.37 164.72 159.44 154.48 149.82 145.43 141.30 137.39 133.69 500.00 1000.00 877.12 819.26 768.56 723.78 683.92 648.23 616.07 586.96 560.47 536.27 514.07 493.64 474.77 457.29 441.05 425.93 411.80 398.59 386.19 374.55 363.58 353.24 343.47 334.23 914.58 882.10 851.85 823.61 797.18 772.39 749.10 727.17 706.48 686.95 668.46 11 AME, Inc. 1.5A CMOS LDO AME8816 n External Resistor Divider Table (contd.) R1(kohm) Vout 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 4.70 4.75 4.80 4.85 4.90 4.95 5.00 1.00 2.00 0.65 0.63 0.62 0.60 0.59 0.58 0.56 0.55 0.54 0.53 0.52 0.51 0.50 0.49 0.48 0.47 0.46 0.45 0.44 0.43 0.43 0.42 0.41 0.41 0.40 0.39 0.39 0.38 0.38 0.37 0.36 0.36 0.35 0.35 0.34 0.34 0.33 0.33 1.30 1.27 1.24 1.21 1.18 1.15 1.13 1.10 1.08 1.05 1.03 1.01 0.99 0.97 0.95 0.93 0.92 0.90 0.88 0.87 0.85 0.84 0.83 0.81 0.80 0.79 0.77 0.76 0.75 0.74 0.73 0.72 0.71 0.70 0.69 0.68 0.67 0.66 5.00 10.00 20.00 50.00 100.00 200.00 R2(kohm)=(1.242*R1(kohm))/(Vout-1.242) 3.25 6.51 13.02 32.55 65.09 130.19 3.17 6.34 12.69 31.72 63.43 126.86 3.09 6.19 12.37 30.93 61.85 123.71 3.02 6.03 12.07 30.17 60.35 120.70 2.95 5.89 11.78 29.46 58.92 117.84 2.88 5.76 11.51 28.78 57.55 115.11 2.81 5.63 11.25 28.13 56.25 112.50 2.75 5.50 11.00 27.50 55.00 110.01 2.69 5.38 10.76 26.91 53.81 107.63 2.63 5.27 10.53 26.34 52.67 105.34 2.58 5.16 10.32 25.79 51.58 103.16 2.53 5.05 10.11 25.26 50.53 101.06 2.48 4.95 9.90 24.76 49.52 99.04 2.43 4.86 9.71 24.28 48.55 97.11 2.38 4.76 9.52 23.81 47.62 95.25 2.34 4.67 9.35 23.36 46.73 93.45 2.29 4.59 9.17 22.93 45.86 91.73 2.25 4.50 9.01 22.52 45.03 90.07 2.21 4.42 8.85 22.12 44.23 88.46 2.17 4.35 8.69 21.73 43.46 86.91 2.14 4.27 8.54 21.35 42.71 85.42 2.10 4.20 8.40 20.99 41.99 83.98 2.06 4.13 8.26 20.64 41.29 82.58 2.03 4.06 8.12 20.31 40.61 81.23 2.00 4.00 7.99 19.98 39.96 79.92 1.97 3.93 7.87 19.66 39.33 78.66 1.94 3.87 7.74 19.36 38.72 77.43 1.91 3.81 7.62 19.06 38.12 76.24 1.88 3.75 7.51 18.77 37.55 75.09 1.85 3.70 7.40 18.49 36.99 73.97 1.82 3.64 7.29 18.22 36.44 72.89 1.80 3.59 7.18 17.96 35.92 71.83 1.77 3.54 7.08 17.70 35.40 70.81 1.75 3.49 6.98 17.45 34.91 69.81 1.72 3.44 6.88 17.21 34.42 68.85 1.70 3.40 6.79 16.98 33.95 67.91 1.67 3.35 6.70 16.75 33.50 66.99 1.65 3.30 6.61 16.52 33.05 66.10 500.00 1000.00 325.47 317.16 309.26 301.75 294.59 287.77 281.25 275.02 269.06 263.36 257.89 252.64 247.61 242.77 238.11 233.63 229.32 225.16 221.15 217.28 213.55 209.94 206.45 203.07 199.81 196.64 193.58 190.61 187.73 184.93 182.22 179.58 177.02 174.54 172.12 169.76 167.48 165.25 650.94 634.32 618.53 603.50 589.18 575.53 562.50 550.04 538.13 526.72 515.78 505.29 495.22 485.54 476.23 467.27 458.64 450.33 442.31 434.57 427.10 419.88 412.90 406.15 399.61 393.29 387.16 381.22 375.45 369.86 364.44 359.17 354.05 349.07 344.24 339.53 334.95 330.49 Note: Small load(greater than 2 mA) is necessary as R1 or R2 is larger than 50 Kohm. Otherwise, output voltage probably cannot be pulled down to 0 V on disable mode. 12 AME, Inc. AME8816 1.5A CMOS LDO n Package Dimension TO-263 (DDPAK-5) Top View Side View SYMBOLS MILLIMETERS MIN MAX MIN MAX A 10.05 10.31 0.396 0.406 B 8.28 8.53 0.326 0.336 C 4.31 4.57 0.170 0.180 D 0.66 0.91 0.026 0.036 E 1.14 1.40 0.045 0.055 G Front View INCHES 1.70 ref 0.067 ref H 14.73 15.75 0.580 0.620 K 1.40 1.68 0.000 0.066 L 0.00 0.25 0.055 0.010 M 2.49 2.74 0.000 0.108 N 0.43 0.58 0.098 0.023 P 2.29 2.79 0.017 0.110 R 0o 2.41 8o 2.67 0o 0.095 8o 0.105 S W 0.25 0.01 MILLIMETERS INCHES SO-8 Top View SYMBOLS MIN MAX MIN MAX A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 Side View 1.45 REF A2 θ Front View 0.057 REF B 0.33 0.51 0.013 C 0.19 0.25 0.007 0.010 D 4.80 5.00 0.189 0.1970 E 3.80 4.00 0.150 0.157 1.27 BSC e 0.020 0.050 BSC H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 y - 0.10 - 0.004 θ 0o 8o 0o 8o 13 www.ame.com.tw E-Mail: [email protected] Life Support Policy: These products of AME, Inc. are not authorized for use as critical components in life-support devices or systems, without the express written approval of the president of AME, Inc. AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and advises its customers to obtain the latest version of relevant information. AME, Inc. , January 2002 Document: 2013-DS8816-C U.S. Headquarters Corporate Headquarters Analog Microelectronics, Inc. AME, Inc. 3100 De La Cruz Blvd. Suite 201 Santa Clara, CA. 95054-2046 2F, 189 Kang-Chien Road, Nei-Hu Dist. Taipei 114 Taiwan, R.O.C. Tel : (408) 988-2388 Fax: (408) 988-2489 Tel : 886 2 2627-8687 Fax : 886 2 2659-2989