DATA SHEET Part No. AN26065A Package Code No. ALGA011-W-0912ANA Publication date: May 2012 Ver. AEB 1 AN26065A Contents Overview …………………………………………………………………………………………………………… 3 Features …………………………………………………………………………………………………………… 3 Applications ………………………………………………………………………………………………………… 3 Package ……………………………………………………………………………………………………………… 3 Type ………………………………………………………………………………………………………………… 3 Application Circuit Example (Block Diagram) …………………………………………………………………… 4 Pin Descriptions …………………………………………………………………………………………………… 6 Current and Voltage Ranges for Pins …………………………………………………………………………… 7 Absolute Maximum Ratings ……………………………………………………………………………………… 8 Operating Supply Voltage Range Electrical Characteristics …………….………………………………………………………………… 8 ………………………………………………………………………………………… 9 Electrical Characteristics (Referred design parameters) ………….…………………………………………… 13 Control Pin Mode Table ………………………………………………….………………………………………… 26 Technical Data ……………………………………………………………………………………………………… 27 y I/O block circuit diagrams and pin function descriptions ……………………………………………………… 27 y PD ⎯ Ta diagram ………………………………………………………………………………………………… 29 Usage Notes ………………………………………….……………………………………………………………. 30 Ver. AEB 2 AN26065A AN26065A UMTS Triple Band LNA-IC (Band I, II, IV, IX / V, XIII) Overview y AN26065A is LNA-IC for triple band (Band I, II, IV, IX / V, XIII) UMTS. y Realizing high performance by using 0.18 μm SiGeC Bi-CMOS process (fT = 90 GHz, fmax = 140 GHz). y Each Band is selectable and High/Low Gain-mode is changeable, controlled by integrated CMOS logic circuit. y Achieving miniaturization by using small size package. [ Unit: MHz ] Band TX RX I 1920 to 1980 2110 to 2170 II 1850 to 1910 1930 to 1990 III 1710 to 1785 1805 to 1880 IV 1710 to 1755 2110 to 2155 V 824 to 849 869 to 894 VI 830 to 840 875 to 885 VII 2500 to 2570 2620 to 2690 VIII 880 to 915 925 to 960 IX 1750 to 1785 1845 to 1880 Features y Low voltage operation y Low current consumption y High gain(Gain) y Low noise figure(NF) y Low distortion (IIP3 +10 MHz offset) +2.85 V typ. 4.7 mA typ. 25 μA typ. 16.5 dB typ. 16.5 dB typ. 16.3 dB typ. 1.40 dB typ. 1.10 dB typ. 1.40 dB typ. 2.0 dBm typ. 4.0 dBm typ. 2.5 dBm typ. (High-Gain mode) (Low-Gain mode) fRX = 2140 MHz fRX = 881.5 MHz fRX = 1960 MHz fRX = 2140 MHz fRX = 881.5 MHz fRX = 1960 MHz fRX = 2140 MHz fRX = 881.5 MHz fRX = 1960 MHz (High-Gain mode) (High-Gain mode) (High-Gain mode) (High-Gain mode) (High-Gain mode) (High-Gain mode) (High-Gain mode) (High-Gain mode) (High-Gain mode) y Small package(WLCSP) Applications y Triple-band UMTS handset. Package y 11 pin Wafer level chip size package (WLCSP) Size : 0.86 mm × 1.16 mm (0.3 mm pitch) Type y Bi-CMOS IC Ver. AEB 3 AN26065A Application Circuit Example 1 (Block Diagram) Note) See "External parts 1" on Page47. (Top View) LNA1 OUT (Band II, IX) LNA2 OUT (Band I) LNA3 OUT (Band V,VIII) L5 L4 L6 C8 C7 A1 A3 A2 A4 CNT1 (LNA select 1) VCC B1 B2 B3 CNT2 (LNA select 2) C6 C1 C2 C3 C4 CNT3 (Gain control) C1 C3 C5 C2 C4 L1 L2 LNA1 IN (Band II, IX) LNA2 IN (Band I) L3 LNA3 IN (Band V,VIII) Notes) y This application circuit is shown as an example but does not guarantee the design for mass production set. y This block diagram is for explaining functions. The part of the block diagram may be omitted, or it may be simplified. Ver. AEB 4 AN26065A Application Circuit Example 2 (Block Diagram) Note) See "External parts 2" on Page48. (Top View) LNA1 OUT (Band I, IV) LNA2 OUT (Band I) L4 L5 LNA3 OUT (Band V,VIII) L6 C7 A1 A3 A2 A4 CNT1 (LNA select 1) VCC B1 B2 B3 CNT2 (LNA select 2) C6 C1 C2 C3 C4 CNT3 (Gain control) C1 C3 C5 C2 C4 L1 L2 LNA1 IN (Band I, IV) LNA2 IN (Band I) L3 LNA3 IN (Band V,VIII) Notes) y This application circuit is shown as an example but does not guarantee the design for mass production set. y This block diagram is for explaining functions. The part of the block diagram may be omitted, or it may be simplified. Ver. AEB 5 AN26065A Pin Descriptions Pin No. Pin name Type Description A1 OUT1 Output LNA1 RF Output (Band I, II, IV, IX) A2 OUT2 Output LNA2 RF Output (Band I) A3 OUT3 Output LNA3 RF Output (Band V, VIII) A4 CNT1 Input B1 VCC Power Supply VCC B2 GND Ground GND B3 CNT2 Input B4 N.C. — C1 IN1 Input LNA1 RF Input (Band I, II, IV, IX) C2 IN2 Input LNA2 RF Input (Band I) C3 IN3 Input LNA3 RF Input (Band V, VIII) C4 CNT3 Input High-Gain / Low-Gain SW input LNA select SW input 1 LNA select SW input 2 N.C. Ver. AEB 6 AN26065A Current and Voltage Ranges for Pins Note) y The ranges on the list are the voltages of respective pins in relation to GND. y Do not apply the voltages or the currents from external into the pins which are not on the list. y The values shows voltage to the GND unless otherwise specified. (+) is inlet current and (–) is outlet current in the circuit. y Voltage applying exceeding below ratings leads to the malfunction and the damage of the device. y Below ratings are specified regarding malfunction and stress, not for operation guaranty. Pin No. Pin name Range Unit Note A1 OUT1 – 0.3 to (VCC) V — A2 OUT2 – 0.3 to (VCC) V — A3 OUT3 – 0.3 to (VCC) V — A4 CNT1 – 0.3 to (VCC) V — B1 VCC 0 to 3.0 V — B2 GND 0 V *1 B3 CNT2 – 0.3 to (VCC) V — B4 N.C. — V — C1 IN1 — V *2 C2 IN2 — V *2 C3 IN3 — V *2 C4 CNT3 – 0.3 to (VCC) V — Notes) *1 : Same as GND pin. *2 : RF signal input pin. (Maximum input power is 0dBm.) Do not apply DC voltages. Ver. AEB 7 AN26065A Absolute Maximum Ratings Note) Absolute maximum ratings are limit values which are not destructed, and are not the values to which operation is guaranteed. A No. Parameter Symbol Rating Unit Notes 1 Supply voltage VCC 3.6 V *1 2 Supply current ICC 10 mA ⎯ 3 Power dissipation PD 31 mW *2 4 Operating ambient temperature Topr –30 to +85 °C *3 5 Storage temperature Tstg –40 to +125 °C *3 Notes) *1 : The values under the condition not exceeding the above absolute maximum ratings and the power dissipation. *2 : The power dissipation shown is the value at Ta = 85°C for the independent (unmounted) IC package without a heat sink. When using this IC, refer to y PD – Ta diagram in the Technical Data and design the heat radiation with sufficient margin so that the allowable value might not be exceeded based on the conditions of power supply voltage, load, and ambient temperature. *3 : Except for the power dissipation, operating ambient temperature, and storage temperature, all ratings are for Ta = 25°C. Operating Supply Voltage Range Parameter Supply voltage range Symbol Range Unit Notes VCC 2.65 to 3.00 V *1 Note) *1 :The values under the condition not exceeding the above absolute maximum ratings and the power dissipation. Ver. AEB 8 AN26065A Electrical Characteristics at VCC = 2.85 V Notes) y All parameters are specified under Ta = 25°C±2°C unless otherwise specified. B No. Parameter Symbol Conditions Limits Min Typ Max Unit Notes DC electrical characteristics DC-1 Circuit current HG (LNA2) IccHa VCC current at LNA2 High-Gain mode. No input signal — 4.7 6.3 mA — DC-2 Circuit current HG (LNA3) IccHb VCC current at LNA3 High-Gain mode. No input signal — 4.1 5.5 mA — DC-3 Circuit current HG (LNA1) IccHc VCC current at LNA1 High-Gain mode. No input signal — 4.7 6.3 mA — DC-4 Circuit current LG (LNA2) IccLa VCC current at LNA2 Low-Gain mode. No input signal — 11 60 μA — DC-5 Circuit current LG (LNA3) IccLb VCC current at LNA3 Low-Gain mode. No input signal — 25 80 μA — DC-6 Circuit current LG (LNA1) IccLc VCC current at LNA1 Low-Gain mode. No input signal — 25 80 μA — DC-7 SW voltage (High) VIH 1.60 — — V — DC-8 SW voltage (Low) VIL VIL = VCC × 0.20 0.0 — 0.6 V — DC-9 SW current (High) IIH Current at CNT pin VIH = VCC — 10 20 μA — — Ver. AEB 9 AN26065A Electrical Characteristics (continued) at VCC = 2.85 V Notes) y All parameters are specified under Ta = 25°C±2°C, fRXa = 2 140 MHz, PRX = –30 dBm, CW unless otherwise specified. y Input/output connector & substrate loss (0.34 dB/0.34 dB) included. B No. Parameter Symbol Conditions Limits Min Typ Max Unit Notes LNA2 : AC electrical characteristics ( BAND I ) A-1 Power Gain HG GHSa High-Gain mode f = fRXa 15.0 16.5 18.0 dB — A-2 Power Gain LG GLSa Low-Gain mode f = fRXa –9.0 –7.0 –5.0 dB — A-3 IIP3 +10 MHz detuning HG IIP3H1Sa High-Gain mode f1 = fRXa + 10 MHz f2 = fRXa + 20 MHz Input 2 signals (f1, f2) –2.5 2.0 — dBm — A-4 IIP3 –10 MHz detuning HG IIP3H2Sa High-Gain mode f1 = fRXa – 10 MHz f2 = fRXa – 20 MHz Input 2 signals (f1, f2) –1.5 3.0 — dBm — Ver. AEB 10 AN26065A Electrical Characteristics (continued) at VCC = 2.85 V Notes) y All parameters are specified under Ta = 25°C±2°C, fRXb = 881.5 MHz, PRX = –30 dBm, CW unless otherwise specified. y Input/output connector & substrate loss (0.15 dB/0.15 dB) included. B No. Parameter Symbol Conditions Limits Min Typ Max Unit Notes LNA3 : AC electrical characteristics ( BAND V ) B-1 Power Gain HG GHSb High-Gain mode f = fRXb 15.0 16.5 17.7 dB — B-2 Power Gain LG GLSb Low-Gain mode f = fRXb –7.5 –5.5 –3.5 dB — B-3 IIP3 +10 MHz detuning HG IIP3H1Sb High-Gain mode f1 = fRXb + 10 MHz f2 = fRXb + 20 MHz Input 2 signals (f1, f2) – 0.5 4.0 — dBm — B-4 IIP3 –10 MHz detuning HG IIP3H2Sb High-Gain mode f1 = fRXb – 10 MHz f2 = fRXb – 20 MHz Input 2 signals (f1, f2) – 0.5 3.0 — dBm — Ver. AEB 11 AN26065A Electrical Characteristics (continued) at VCC = 2.85 V Notes) y All parameters are specified under Ta = 25°C±2°C, fRXc = 1 960 MHz, PRX = –30 dBm, CW unless otherwise specified. y Input/output connector & substrate loss (0.32 dB/0.32 dB) included. B No. Parameter Symbol Conditions Limits Min Typ Max Unit Notes LNA1 : AC electrical characteristics ( BAND II ) C-1 Power Gain HG GHSc High-Gain mode f = fRXc 14.8 16.3 17.8 dB — C-2 Power Gain LG GLSc Low-Gain mode f = fRXc –9.0 –7.0 –5.0 dB — C-3 IIP3 +10 MHz detuning HG IIP3H1Sc High-Gain mode f1 = fRXc + 10 MHz f2 = fRXc + 20 MHz Input 2 signals (f1, f2) –1.5 2.5 — dBm — C-4 IIP3 –10 MHz detuning HG IIP3H2Sc High-Gain mode f1 = fRXc – 10 MHz f2 = fRXc – 20 MHz Input 2 signals (f1, f2) 0.0 2.5 — dBm — Ver. AEB 12 AN26065A Electrical Characteristics (Reference values for design) at VCC = 2.85 V Notes) y All parameters are specified under Ta = 25°C±2°C, fRXa = 2 110 MHz to 2 170 MHz, PRX = –30 dBm, CW unless otherwise specified. y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection. If a problem does occur related to these characteristics, Matsushita will respond in good faith to user concerns. y Input/output connector & substrate loss (0.34dB/0.34dB) included. B No. Parameter Symbol Conditions Reference values Min Typ Max Unit Notes LNA2 : AC electrical characteristics ( BAND I ) D-1 Power Gain HG GHa High-Gain mode f = fRXa 15.0 16.5 18.0 dB — D-2 Power Gain LG GLa Low-Gain mode f = fRXa –9.0 –7.0 –5.0 dB — D-3 Noise figure HG NFHa High-Gain mode f = fRXa — 1.40 1.80 dB — D-4 Noise figure LG NFLa Low-Gain mode f = fRXa — 7.0 10.0 dB — D-5 IIP3 +10 MHz detuning HG IIP3H1a High-Gain mode f1 = fRXa + 10 MHz f2 = fRXa + 20 MHz Input 2 signals (f1, f2) –2.5 2.0 — dBm — D-6 IIP3 –10 MHz detuning HG IIP3H2a High-Gain mode f1 = fRXa – 10 MHz f2 = fRXa – 20 MHz Input 2 signals (f1, f2) –1.5 3.0 — dBm — IIP3L1a Low-Gain mode f1 = fRXa + 10 MHz f2 = fRXa + 20 MHz PRX1 = PRX2 = –10 dBm Input 2 signals (f1, f2) 20 25 — dBm — IIP3L2a Low-Gain mode f1 = fRXa – 10 MHz f2 = fRXa – 20 MHz PRX1 = PRX2 = –10 dBm Input 2 signals (f1, f2) 20 26 — dBm — IP1dBH1a High-Gain mode f = fRXa -22 –16 — dBm — IP1dBH2a High-Gain mode f1 = fRXa PRX1 = –40 dBm f2 = fRXa – 190 MHz PRX2 : Var. Input 2 signals (f1, f2) –17 –10 — dBm — D-7 IIP3 +10 MHz detuning LG D-8 IIP3 –10 MHz detuning LG D-9 Input P1dB D-10 Input P1dB TX undesired signal input HG Ver. AEB 13 AN26065A Electrical Characteristics (Reference values for design) (continued) at VCC = 2.85 V Notes) y All parameters are specified under Ta = 25°C±2°C, fRXa = 2 110 MHz to 2 170 MHz, PRX = –30 dBm, CW unless otherwise specified. y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection. If a problem does occur related to these characteristics, Matsushita will respond in good faith to user concerns. y Input/output connector & substrate loss (0.34 dB/0.34 dB) included. B No. Parameter Symbol Conditions Reference values Unit Notes — dBm — 16 — dBm — 2.0 4.0 — — — Min Typ Max IIP2H1a High-Gain mode f1 = fRXa – 190 MHz f2 = 190 MHz Input 2 signals (f1, f2) 10 15 IIP2H2a High-Gain mode f1 = fRXa – 190 MHz f2 = 2 × fRXa – 190 MHz Input 2 signals (f1, f2) 10 KHa High-Gain mode f = 0 to 6 GHz LNA2 : AC electrical characteristics ( BAND I ) D-11 IIP2 D-12 IIP2 D-13 K-factor D-14 Reverse isolation HG ISOHa High-Gain mode f = fRXa — –30 –20 dB — D-15 Reverse isolation LG ISOLa Low-Gain mode f = fRXa — –7.0 –4.0 dB — LNA1 / LNA3 :High-Gain mode LNA2:off LNA2 input → LNA2 output f = fRXa — –30 -27 dB — D-16 Band to band isolation D-17 Input return loss HG S11Ha High-Gain mode f = fRXa 6.5 9.5 — dB — D-18 Input return loss LG S11La Low-Gain mode f = fRXa 8.5 9.5 — dB — D-19 Output return loss HG S22Ha High-Gain mode f = fRXa 8.5 9.5 — dB — D-20 Output return loss LG S22La Low-Gain mode f = fRXa 8.5 9.5 — dB — D-21 Gain Changing Time TCGa Low → High / High → Low f = 2 170 MHz Gain Error < 1 dB — 7 16 μs — BCGa LNA3 → LNA2 f = 2 170 MHz LNA1 → LNA2 f = 2 170 MHz High Gain Mode Gain Error < 1 dB — 7 16 μs — D-22 Band Changing Time BISa Ver. AEB 14 AN26065A Electrical Characteristics (Reference values for design) (continued) at VCC = 2.85 V Notes) y All parameters are specified Ta = 25°C±2°C, fRXb1 = 869 MHz to 894 MHz, PRX = –30 dBm, CW unless otherwise specified. y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection. If a problem does occur related to these characteristics, Matsushita will respond in good faith to user concerns. y Input/output connector & substrate loss (0.15 dB/0.15 dB) included. B No. Parameter Symbol Conditions Reference values Min Typ Max Unit Notes LNA3 : AC electrical characteristics ( BAND V ) E-1 Power Gain HG GHb1 High-Gain mode f = fRXb1 15.0 16.5 17.7 dB — E-2 Power Gain LG GLb1 Low-Gain mode f = fRXb1 –7.5 –5.5 –3.5 dB — E-3 Noise figure HG NFHb1 High-Gain mode f = fRXb1 — 1.10 1.35 dB — E-4 Noise figure LG NFLb1 Low-Gain mode f = fRXb1 — 5.5 8.5 dB — E-5 IIP3 +10 MHz detuning HG IIP3H1b1 High-Gain mode f1 = fRXb1 + 10 MHz f2 = fRXb1 + 20 MHz Input 2 signals (f1, f2) – 0.5 4.5 — dBm — E-6 IIP3 –10 MHz detuning HG IIP3H2b1 High-Gain mode f1 = fRXb1 – 10 MHz f2 = fRXb1 – 20 MHz Input 2 signals (f1, f2) – 0.5 3.0 — dBm — IIP3L1b1 Low-Gain mode f1 = fRXb1 + 10 MHz f2 = fRXb1 + 20 MHz PRX1 = PRX2 = –10 dBm Input 2 signals (f1, f2) 18 22 — dBm — IIP3L2b1 Low-Gain mode f1 = fRXb1 – 10 MHz f2 = fRXb1 – 20 MHz PRX1 = PRX2 = –10 dBm Input 2 signals (f1, f2) 18 23 — dBm — High-Gain mode f = fRXb1 –21 –14 — dBm — –20 –13 — dBm — E-7 IIP3 +10 MHz detuning LG E-8 IIP3 –10 MHz detuning LG E-9 Input P1dB IP1dBH1b1 Input P1dB TX undesired signal input HG High-Gain mode f1 = fRXb1 PRX1 = –40 dBm IP1dBH2b1 f2 = fRXb1 – 45 MHz PRX2 : Var. Input 2 signals (f1, f2) E-10 Ver. AEB 15 AN26065A Electrical Characteristics (Reference values for design) (continued) at VCC = 2.85 V Notes) y All parameters are specified Ta = 25°C±2°C, fRXb1 = 869 MHz to 894 MHz, PRX = –30 dBm, CW unless otherwise specified. y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection. If a problem does occur related to these characteristics, Matsushita will respond in good faith to user concerns. y Input/output connector & substrate loss (0.15 dB/0.15 dB) included. B No. Parameter Symbol Conditions Reference values Unit Notes — dBm — Min Typ Max 12 17 LNA3 : AC electrical characteristics ( BAND V ) E-11 IIP2 IIP2H1b1 High-Gain mode f1 = fRXb1 – 45 MHz f2 = 45 MHz Input 2 signals (f1, f2) IIP2H2b1 High-Gain mode f1 = fRXb1 – 45 MHz f2 = 2 × fRXb1 – 45 MHz Input 2 signals (f1, f2) –1.5 2.5 — dBm — KHb1 High-Gain mode f = 0 to 6 GHz 1.5 2.0 — — — E-12 IIP2 E-13 K-factor E-14 Reverse isolation HG ISOHb1 High-Gain mode f = fRXb1 — –24 –18 dB — E-15 Reverse isolation LG ISOLb1 Low-Gain mode f = fRXb1 — –6.0 –3.0 dB — LNA2 :High-Gain mode LNA3:off LNA3 input → LNA3 output f = fRXb1 — –24 –20 dB — E-16 Band to band isolation E-17 Input return loss HG S11Hb1 High-Gain mode f = fRXb1 8 9.5 — dB — E-18 Input return loss LG S11Lb1 Low-Gain mode f = fRXb1 6 6.5 — dB — E-19 Output return loss HG S22Hb1 High-Gain mode f = fRXb1 8.5 9.5 — dB — E-20 Output return loss LG S22Lb1 Low-Gain mode f = fRXb1 8.5 9.5 — dB — E-21 Gain Changing Time TCGb1 Low → High / High → Low f = 960 MHz Gain Error < 1 dB — 7.5 18 μs — TCBb1 LNA2 → LNA3 f = 960 MHz High Gain Mode Gain Error < 1 dB — 7.5 18 μs — E-22 Band Changing Time BISb1 Ver. AEB 16 AN26065A Electrical Characteristics (Reference values for design) (continued) at VCC = 2.85 V Notes) y All parameters are specified Ta = 25°C±2°C, fRXb2 = 925 MHz to 960 MHz, PRX = –30 dBm, CW unless otherwise specified. y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection. If a problem does occur related to these characteristics, Matsushita will respond in good faith to user concerns. y Input/output connector & substrate loss (0.15 dB/0.15 dB) included. B No. Parameter Symbol Conditions Reference values Min Typ Max Unit Notes LNA3 : AC electrical characteristics ( BAND VIII ) F-1 Power Gain HG GHb2 High-Gain mode f = fRXb2 14.7 16.2 17.4 dB — F-2 Power Gain LG GLb2 Low-Gain mode f = fRXb2 –7.5 –5.5 –3.5 dB — F-3 Noise figure HG NFHb2 High-Gain mode f = fRXb2 — 1.10 1.35 dB — F-4 Noise figure LG NFLb2 Low-Gain mode f = fRXb2 — 5.5 8.5 dB — F-5 IIP3 +10 MHz detuning HG IIP3H1b2 High-Gain mode f1 = fRXb2 + 10 MHz f2 = fRXb2 + 20 MHz Input 2 signals (f1, f2) –1.0 4.0 — dBm — F-6 IIP3 –10 MHz detuning HG IIP3H2b2 High-Gain mode f1 = fRXb2 – 10 MHz f2 = fRXb2 – 20 MHz Input 2 signals (f1, f2) – 0.5 3.0 — dBm — IIP3L1b2 Low-Gain mode f1 = fRXb2 + 10 MHz f2 = fRXb2 + 20 MHz PRX1 = PRX2 = –10 dBm Input 2 signals (f1, f2) 17 22 — dBm — IIP3L2b2 Low-Gain mode f1 = fRXb2 – 10 MHz f2 = fRXb2 – 20 MHz PRX1 = PRX2 = –10 dBm Input 2 signals (f1, f2) 17 22 — dBm — High-Gain mode f = fRXb2 –21 –14 — dBm — –17 –10 — dBm — F-7 IIP3 +10 MHz detuning LG F-8 IIP3 –10 MHz detuning LG F-9 Input P1dB IP1dBH1b2 Input P1dB TX undesired signal input HG High-Gain mode f1 = fRXb2 PRX1 = –40 dBm IP1dBH2b2 f2 = fRXb2 – 45 MHz PRX2 : Var. Input 2 signals (f1, f2) F-10 Ver. AEB 17 AN26065A Electrical Characteristics (Reference values for design) (continued) at VCC = 2.85 V Notes) y All parameters are specified Ta = 25°C±2°C, fRXb2 = 925 MHz to 960 MHz, PRX = –30 dBm, CW unless otherwise specified. y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection. If a problem does occur related to these characteristics, Matsushita will respond in good faith to user concerns. y Input/output connector & substrate loss (0.15 dB/0.15 dB) included. B No. Parameter Symbol Conditions Reference values Unit Notes — dBm — Min Typ Max 12 17 LNA3 : AC electrical characteristics ( BAND VIII ) F-11 IIP2 IIP2H1b2 High-Gain mode f1 = fRXb2 – 45 MHz f2 = 45 MHz Input 2 signals (f1, f2) IIP2H2b2 High-Gain mode f1 = fRXb2 – 45 MHz f2 = 2 × fRXb2 – 45 MHz Input 2 signals (f1, f2) –1.5 3.5 — dBm — KHb2 High-Gain mode f = 0 to 6 GHz 1.5 2.0 — — — F-12 IIP2 F-13 K-factor F-14 Reverse isolation HG ISOHb2 High-Gain mode f = fRXb2 — –24 –18 dB — F-15 Reverse isolation LG ISOLb2 Low-Gain mode f = fRXb2 — –6.0 –3.0 dB — LNA2 :High-Gain mode LNA3:off LNA3 input → LNA3 output f = fRXb2 — –24 –20 dB — F-16 Band to band isolation F-17 Input return loss HG S11Hb2 High-Gain mode f = fRXb2 8.5 9.5 — dB — F-18 Input return loss LG S11Lb2 Low-Gain mode f = fRXb2 5.5 6.0 — dB — F-19 Output return loss HG S22Hb2 High-Gain mode f = fRXb2 8.5 9.5 — dB — F-20 Output return loss LG S22Lb2 Low-Gain mode f = fRXb2 8.5 9.5 — dB — F-21 Gain Changing Time TCGb2 Low → High / High → Low f = 960 MHz Gain Error < 1 dB — 7.5 18 μs — TCBb2 LNA2 → LNA3 f = 960 MHz High Gain Mode Gain Error < 1 dB — 7.5 18 μs — F-22 Band Changing Time BISb2 Ver. AEB 18 AN26065A Electrical Characteristics (Reference values for design) (continued) at VCC = 2.85 V Notes) y All parameters are specified Ta = 25°C±2°C, fRXc1 = 2 110 MHz to 2 170 MHz, PRX = –30 dBm, CW unless otherwise specified. y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection. If a problem does occur related to these characteristics, Matsushita will respond in good faith to user concerns. y Input/output connector & substrate loss (0.34 dB/0.34 dB) included. B No. Parameter Symbol Conditions Reference values Min Typ Max Unit Notes LNA1 : AC electrical characteristics ( BAND I ) G-1 Power Gain HG GHc1 High-Gain mode f = fRXc1 14.6 16.1 17.8 dB — G-2 Power Gain LG GLc1 Low-Gain mode f = fRXc1 –9.0 –7.0 –5.0 dB — G-3 Noise figure HG NFHc1 High-Gain mode f = fRXc1 — 1.50 2.00 dB — G-4 Noise figure LG NFLc1 Low-Gain mode f = fRXc1 — 7.0 10.0 dB — G-5 IIP3 +10 MHz detuning HG IIP3H1c1 High-Gain mode f1 = fRXc1 + 10 MHz f2 = fRXc1 + 20 MHz Input 2 signals (f1, f2) –1.5 2.5 — dBm — G-6 IIP3 –10 MHz detuning HG IIP3H2c1 High-Gain mode f1 = fRXc1 – 10 MHz f2 = fRXc1 – 20 MHz Input 2 signals (f1, f2) 0.0 2.5 — dBm — IIP3L1c1 Low-Gain mode f1 = fRXc1 + 10 MHz f2 = fRXc1 + 20 MHz PRX1 = PRX2 = –10 dBm Input 2 signals (f1, f2) 19 24 — dBm — IIP3L2c1 Low-Gain mode f1 = fRXc1 – 10 MHz f2 = fRXc1 – 20 MHz PRX1 = PRX2 = –10 dBm Input 2 signals (f1, f2) 20 25 — dBm — IP1dBH1c1 High-Gain mode f = fRXc1 –21 –14 — dBm — IP1dBH2c1 High-Gain mode f1 = fRXc1 PRX1 = –40 dBm f2 = fRXc1 – 190 MHz PRX2 : Var. Input 2 signals (f1, f2) –16 –9 — dBm — G-7 IIP3 +10 MHz detuning LG G-8 IIP3 –10 MHz detuning LG G-9 Input P1dB G-10 Input P1dB TX undesired signal input HG Ver. AEB 19 AN26065A Electrical Characteristics (Reference values for design) (continued) at VCC = 2.85 V Notes) y All parameters are specified Ta = 25°C±2°C, fRXc1 = 2 110 MHz to 2 170 MHz, PRX = –30 dBm, CW unless otherwise specified. y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection. If a problem does occur related to these characteristics, Matsushita will respond in good faith to user concerns. y Input/output connector & substrate loss (0.34 dB/0.34 dB) included. B No. Parameter Symbol Conditions Reference values Unit Notes — dBm — 18 — dBm — 1.5 2.0 — — — Min Typ Max IIP2H1c1 High-Gain mode f1 = fRXc1 – 190 MHz f2 = 190 MHz Input 2 signals (f1, f2) 11 19 IIP2H2c1 High-Gain mode f1 = fRXc1 – 190 MHz f2 = 2 × fRXc1 – 190 MHz Input 2 signals (f1, f2) 10 KHc1 High-Gain mode f = 0 to 6 GHz LNA1 : AC electrical characteristics ( BAND I ) G-11 IIP2 G-12 IIP2 G-13 K-factor G-14 Reverse isolation HG ISOHc1 High-Gain mode f = fRXc1 — –30 –20 dB — G-15 Reverse isolation LG ISOLc1 Low-Gain mode f = fRXc1 — –7.0 –4.0 dB — LNA2 :High-Gain mode LNA1:off LNA1 input → LNA1 output f = fRXc1 — –26 –23 dB — G-16 Band to band isolation G-17 Input return loss HG S11Hc1 High-Gain mode f = fRXc1 8.5 9.5 — dB — G-18 Input return loss LG S11Lc1 Low-Gain mode f = fRXc1 8.5 9.5 — dB — G-19 Output return loss HG S22Hc1 High-Gain mode f = fRXc1 8.5 9.5 — dB — G-20 Output return loss LG S22Lc1 Low-Gain mode f = fRXc1 8.5 9.5 — dB — G-21 Gain Changing Time TCGc1 Low → High / High → Low f = 2170 MHz Gain Error < 1 dB — 7 16 μs — TCBc1 LNA2 → LNA1 f = 2170 MHz High Gain Mode Gain Error < 1 dB — 7 16 μs — G-22 Band Changing Time BISc1 Ver. AEB 20 AN26065A Electrical Characteristics (Reference values for design) (continued) at VCC = 2.85 V Notes) y All parameters are specified Ta = 25°C±2°C, fRXc2 = 1 930 MHz to 1 990 MHz, PRX = –30 dBm, CW unless otherwise specified. y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection. If a problem does occur related to these characteristics, Matsushita will respond in good faith to user concerns. y Input/output connector & substrate loss (0.32 dB/0.32 dB) included. B No. Parameter Symbol Conditions Reference values Min Typ Max Unit Notes LNA1 : AC electrical characteristics ( BAND II ) H-1 Power Gain HG GHc2 High-Gain mode f = fRXc2 14.8 16.3 17.8 dB — H-2 Power Gain LG GLc2 Low-Gain mode f = fRXc2 –9.0 –7.0 –5.0 dB — H-3 Noise figure HG NFHc2 High-Gain mode f = fRXc2 — 1.40 1.80 dB — H-4 Noise figure LG NFLc2 Low-Gain mode f = fRXc2 — 7.0 10.0 dB — H-5 IIP3 +10 MHz detuning HG IIP3H1c2 High-Gain mode f1 = fRXc2 + 10 MHz f2 = fRXc2 + 20 MHz Input 2 signals (f1, f2) –1.5 2.5 — dBm — H-6 IIP3 –10 MHz detuning HG IIP3H2c2 High-Gain mode f1 = fRXc2 – 10 MHz f2 = fRXc2 – 20 MHz Input 2 signals (f1, f2) 0.0 2.5 — dBm — IIP3L1c2 Low-Gain mode f1 = fRXc2 + 10 MHz f2 = fRXc2 + 20 MHz PRX1 = PRX2 = –10 dBm Input 2 signals (f1, f2) 19 24 — dBm — IIP3L2c2 Low-Gain mode f1 = fRXc2 – 10 MHz f2 = fRXc2 – 20 MHz PRX1 = PRX2 = –10 dBm Input 2 signals (f1, f2) 19 24 — dBm — IP1dBH1c2 High-Gain mode f = fRXc2 –20 –13 — dBm — IP1dBH2c2 High-Gain mode f1 = fRXc2 PRX1 = –40 dBm f2 = fRXc2 – 80 MHz PRX2 : Var. Input 2 signals (f1, f2) –18 –11 — dBm — H-7 IIP3 +10 MHz detuning LG H-8 IIP3 –10 MHz detuning LG H-9 Input P1dB H-10 Input P1dB TX undesired signal input HG Ver. AEB 21 AN26065A Electrical Characteristics (Reference values for design) (continued) at VCC = 2.85 V Notes) y All parameters are specified Ta = 25°C±2°C, fRXc2 = 1 930 MHz to 1 990 MHz, PRX = –30 dBm, CW unless otherwise specified. y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection. If a problem does occur related to these characteristics, Matsushita will respond in good faith to user concerns. y Input/output connector & substrate loss (0.32 dB/0.32 dB) included. B No. Parameter Symbol Conditions Reference values Unit Notes — dBm — 19 — dBm — 1.5 2.0 — — — Min Typ Max IIP2H1c2 High-Gain mode f1 = fRXc2 – 80 MHz f2 = 80 MHz Input 2 signals (f1, f2) 20 26 IIP2H2c2 High-Gain mode f1 = fRXc2 – 80 MHz f2 = 2 × fRXc2 – 80 MHz Input 2 signals (f1, f2) 12 KHc2 High-Gain mode f = 0 to 6 GHz LNA1 : AC electrical characteristics ( BAND II ) H-11 IIP2 H-12 IIP2 H-13 K-factor H-14 Reverse isolation HG ISOHc2 High-Gain mode f = fRXc2 — –30 –20 dB — H-15 Reverse isolation LG ISOLc2 Low-Gain mode f = fRXc2 — –7.0 –4.0 dB — LNA2 :High-Gain mode LNA1:off LNA1 input → LNA1 output f = fRXc2 — –29 –26 dB — H-16 Band to band isolation H-17 Input return loss HG S11Hc2 High-Gain mode f = fRXc2 7.5 9.5 — dB — H-18 Input return loss LG S11Lc2 Low-Gain mode f = fRXc2 8.5 9.5 — dB — H-19 Output return loss HG S22Hc2 High-Gain mode f = fRXc2 8.5 9.5 — dB — H-20 Output return loss LG S22Lc2 Low-Gain mode f = fRXc2 8.5 9.5 — dB — H-21 Gain Changing Time TCGc2 Low → High / High → Low f = 1 990 MHz Gain Error < 1 dB — 7 16 μs — TCBc2 LNA2 → LNA1 f = 1 990 MHz High Gain Mode Gain Error < 1 dB — 7 16 μs — H-22 Band Changing Time BISc2 Ver. AEB 22 AN26065A Electrical Characteristics (Reference values for design) (continued) at VCC = 2.85 V Notes) y All parameters are specified Ta = 25°C±2°C, fRXc3 = 2 110 MHz to 2 155 MHz, PRX = –30 dBm, CW unless otherwise specified. y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection. If a problem does occur related to these characteristics, Matsushita will respond in good faith to user concerns. y Input/output connector & substrate loss (0.34 dB/0.34 dB) included. B No. Parameter Symbol Conditions Reference values Min Typ Max Unit Notes LNA1 : AC electrical characteristics ( BAND IV ) I-1 Power Gain HG GHc3 High-Gain mode f = fRXc3 14.6 16.1 17.8 dB — I-2 Power Gain LG GLc3 Low-Gain mode f = fRXc3 –9.0 –7.0 –5.0 dB — I-3 Noise figure HG NFHc3 High-Gain mode f = fRXc3 — 1.50 2.00 dB — I-4 Noise figure LG NFLc3 Low-Gain mode f = fRXc3 — 7.0 10.0 dB — I-5 IIP3 +10 MHz detuning HG IIP3H1c3 High-Gain mode f1 = fRXc3 + 10 MHz f2 = fRXc3 + 20 MHz Input 2 signals (f1, f2) –1.5 2.5 — dBm — I-6 IIP3 –10 MHz detuning HG IIP3H2c3 High-Gain mode f1 = fRXc3 – 10 MHz f2 = fRXc3 – 20 MHz Input 2 signals (f1, f2) 0.0 2.5 — dBm — IIP3L1c3 Low-Gain mode f1 = fRXc3 + 10 MHz f2 = fRXc3 + 20 MHz PRX1 = PRX2 = –10 dBm Input 2 signals (f1, f2) 19 24 — dBm — IIP3L2c3 Low-Gain mode f1 = fRXc3 – 10 MHz f2 = fRXc3 – 20 MHz PRX1 = PRX2 = –10 dBm Input 2 signals (f1, f2) 19 24 — dBm — IP1dBH1c3 High-Gain mode f = fRXc3 –21 –14 — dBm — IP1dBH2c3 High-Gain mode f1 = fRXc3 PRX1 = –40 dBm f2 = fRXc3 – 400 MHz PRX2 : Var. Input 2 signals (f1, f2) –21 –14 — dBm — I-7 IIP3 +10 MHz detuning LG I-8 IIP3 –10 MHz detuning LG I-9 Input P1dB I-10 Input P1dB TX undesired signal input HG Ver. AEB 23 AN26065A Electrical Characteristics (Reference values for design) (continued) at VCC = 2.85 V Notes) y All parameters are specified Ta = 25°C±2°C, fRXc3 = 2 110 MHz to 2 155 MHz, PRX = –30 dBm, CW unless otherwise specified. y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection. If a problem does occur related to these characteristics, Matsushita will respond in good faith to user concerns. y Input/output connector & substrate loss (0.34 dB/0.34 dB) included. B No. Parameter Symbol Conditions Reference values Unit Notes — dBm — 14 — dBm — Min Typ Max IIP2H1c3 High-Gain mode f1 = fRXc3 – 400 MHz f2 = 400 MHz Input 2 signals (f1, f2) 7 12 IIP2H2c3 High-Gain mode f1 = fRXc3 – 400 MHz f2 = 2 × fRXc3 – 400 MHz Input 2 signals (f1, f2) 9 LNA1 : AC electrical characteristics ( BAND IV ) I-11 IIP2 I-12 IIP2 I-13 K-factor I-14 I-15 KHc3 High-Gain mode f = 0 to 6 GHz 1.5 2.0 — — — Reverse isolation HG ISOHc3 High-Gain mode f = fRXc3 — –30 –20 dB — Reverse isolation LG ISOLc3 Low-Gain mode f = fRXc3 — –7.0 –4.0 dB — LNA2 : High-Gain mode LNA1: off LNA1 input → LNA1 output f = fRXc3 — –27 –24 dB — I-16 Band to band isolation I-17 Input return loss HG S11Hc3 High-Gain mode f = fRXc3 8.5 9.5 — dB — I-18 Input return loss LG S11Lc3 Low-Gain mode f = fRXc3 8.5 9.5 — dB — I-19 Output return loss HG S22Hc3 High-Gain mode f = fRXc3 8.5 9.5 — dB — I-20 Output return loss LG S22Lc3 Low-Gain mode f = fRXc3 8.5 9.5 — dB — I-21 Gain Changing Time TCGc3 Low → High / High → Low f = 2170 MHz Gain Error < 1 dB — 7 16 μs — TCBc3 LNA2 → LNA1 f = 2170 MHz High Gain Mode Gain Error < 1 dB — 7 16 μs — I-22 Band Changing Time BISc3 Ver. AEB 24 AN26065A Electrical Characteristics (Reference values for design) (continued) at VCC = 2.85 V Notes) y All parameters are specified Ta = 25°C±2°C, fRXc4 = 1 845 MHz to 1 880 MHz, PRX = –30 dBm, CW unless otherwise specified. y The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection. If a problem does occur related to these characteristics, Matsushita will respond in good faith to user concerns. y Input/output connector & substrate loss (0.32 dB/0.32 dB) included. B No. Parameter Symbol Conditions Reference values Min Typ Max Unit Notes LNA1 : AC electrical characteristics ( BAND IX ) J-1 Power Gain HG GHc4 High-Gain mode f = fRXc4 15.1 16.6 17.8 dB — J-2 Power Gain LG GLc4 Low-Gain mode f = fRXc4 –9.0 –7.0 –5.0 dB — J-3 Noise figure HG NFHc4 High-Gain mode f = fRXc4 — 1.40 1.80 dB — J-4 Noise figure LG NFLc4 Low-Gain mode f = fRXc4 — 7.0 10.0 dB — J-5 IIP3 +10 MHz detuning HG IIP3H1c4 High-Gain mode f1 = fRXc4 + 10 MHz f2 = fRXc4 + 20 MHz Input 2 signals (f1, f2) –1.5 2.5 — dBm — F-6 IIP3 –10 MHz detuning HG IIP3H2c4 High-Gain mode f1 = fRXc4 – 10 MHz f2 = fRXc4 – 20 MHz Input 2 signals (f1, f2) –0.5 2.5 — dBm — IIP3L1c4 Low-Gain mode f1 = fRXc4 + 10 MHz f2 = fRXc4 + 20 MHz PRX1 = PRX2 = –10 dBm Input 2 signals (f1, f2) 19 24 — dBm — IIP3L2c4 Low-Gain mode f1 = fRXc4 – 10 MHz f2 = fRXc4 – 20 MHz PRX1 = PRX2 = –10 dBm Input 2 signals (f1, f2) 19 25 — dBm — High-Gain mode f = fRXc4 –21 –14 — dBm — –19 –12 — dBm — J-7 IIP3 +10 MHz detuning LG J-8 IIP3 –10 MHz detuning LG J-9 Input P1dB IP1dBH1c4 Input P1dB TX undesired signal input HG High-Gain mode f1 = fRXc4 PRX1 = –40 dBm IP1dBH2c4 f2 = fRXc4 – 95 MHz PRX2 : Var. Input 2 signals (f1, f2) J-10 Ver. AEB 25 AN26065A Control Pin Mode Table Note) See parameters B No.DC-7 to B No.DC-8 in the Electrical Characteristics for control voltage retention ranges. CNT1 CNT2 (LNA select 1) (LNA select 2) High High High Low Low High Low Low CNT3 (Gain control) LNA1 (Band I,II,IV,IX) LNA2 (Band I) LNA3 (Band V,VIII) Mode High — — — — Low — — — — High Off Off On LNA3 High-Gain Low Off Off On LNA3 Low-Gain High On Off Off LNA1 High-Gain Low On Off Off LNA1 Low-Gain High Off On Off LNA2 High-Gain Low Off On Off LNA2 Low-Gain Ver. AEB 26 AN26065A Technical Data y I/O block circuit diagrams and pin function descriptions Note) The characteristics listed below are reference values based on the IC design and are not guaranteed. Pin No. Voltage Internal Circuit Description VCC A1 — LNA1 RF Output (Band II) A1 GND A2 — Refer to A1 LNA2 RF Output (Band I) A3 — Refer to A1 LNA3 RF Output (Band V) A4 A4 CNT1 ; LNA select SW input 1 — GND B1 2.85 V — Voltage supply (VCC) B2 0.0 V — GND B3 — Refer to A4 B4 — — CNT2 ; LNA select SW input 2 N.C. Ver. AEB 27 AN26065A Technical Data (continued) y I/O block circuit diagrams and pin function descriptions (continued) Note) The characteristics listed below are reference values based on the IC design and are not guaranteed. Pin No. Voltage Internal Circuit Description VCC C1 0.75 V LNA1 RF Input (Band II) C1 GND C2 0.75 V Refer to C1 LNA2 RF Input (Band I) C3 0.75 V Refer to C1 LNA3 RF Input (Band V) C4 — Refer to A4 CNT3 ; High-Gain / Low-Gain SW input Ver. AEB 28 AN26065A Technical Data (continued) y PD ⎯ Ta diagram Ver. AEB 29 AN26065A Usage Notes y Special attention and precaution in using 1. This IC is intended to be used for general electronic equipment [Triple-band UMTS handset]. Consult our sales staff in advance for information on the following applications: x Special applications in which exceptional quality and reliability are required, or if the failure or malfunction of this IC may directly jeopardize life or harm the human body. x Any applications other than the standard applications intended. (1) Space appliance (such as artificial satellite, and rocket) (2) Traffic control equipment (such as for automobile, airplane, train, and ship) (3) Medical equipment for life support (4) Submarine transponder (5) Control equipment for power plant (6) Disaster prevention and security device (7) Weapon (8) Others : Applications of which reliability equivalent to (1) to (7) is required 2. Pay attention to the direction of LSI. When mounting it in the wrong direction onto the PCB (printed-circuit-board), it might smoke or ignite. 3. Pay attention in the PCB (printed-circuit-board) pattern layout in order to prevent damage due to short circuit between pins. In addition, refer to the Pin Description (Page 5 and Page 6) for the pin configuration. 4. Perform a visual inspection on the PCB before applying power, otherwise damage might happen due to problems such as a solderbridge between the pins of the semiconductor device. Also, perform a full technical verification on the assembly quality, because the same damage possibly can happen due to conductive substances, such as solder ball, that adhere to the LSI during transportation. 5. Take notice in the use of this product that it might break or occasionally smoke when an abnormal state occurs such as output pinVCC short (Power supply fault), output pin-GND short (Ground fault), or output-to-output-pin short (load short) . And, safety measures such as an installation of fuses are recommended because the extent of the above-mentioned damage and smoke emission will depend on the current capability of the power supply. 6. When using the LSI for new models, verify the safety including the long-term reliability for each product. 7. When the application system is designed by using this LSI, be sure to confirm notes in this book. Be sure to read the notes to descriptions and the usage notes in the book. 8. Due to unshielded structure of this IC, under exposure of light, function and characteristic of the product cannot be guaranteed. During normal operation or even under testing condition, please ensure that IC is not exposed to light. 9. Basically, chip surface is ground potential. Please design to ensure no contact between chip surface and metal shielding. Ver. AEB 30 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202