INFINEON BGA748N16

BGA748N16
High Linearity Quad-Band UMTS LNA (2100, 1900, 900, 800 MHz)
Data Sheet
Revision 3.0, 2010-11-08
RF & Protection Devices
Edition 2010-11-08
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA748N16
High Linearity Quad-Band UMTS LNA
BGA748N16 High Linearity Quad-Band UMTS LNA (2100, 1900, 900, 800 MHz)
Revision History: 2010-11-08, Revision 3.0
Previous Revision:
Page
Subjects (major changes since last revision)
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™,
MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Data Sheet
3
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
2.10
2.11
2.12
2.13
2.14
2.15
2.16
2.17
2.18
2.19
2.20
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Band Select / Gain Control Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Supply Current Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Logic Signal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Measured RF Characteristics UMTS Band V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Measured RF Characteristics UMTS Band V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Measured RF Characteristics UMTS Band V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Measured RF Characteristics UMTS Band VIII . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Measured RF Characteristics UMTS Band VIII . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Measured RF Characteristics UMTS Band VIII . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Measured RF Characteristics UMTS Band II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Measured RF Characteristics UMTS Band II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Measured RF Characteristics UMTS Band II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Measured RF Characteristics UMTS Band I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Measured RF Characteristics UMTS Band I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Measured RF Characteristics UMTS Band I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3
3.1
3.2
3.3
Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS Bands I, II, V and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
4.1
4.2
Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Data Sheet
4
25
25
26
27
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Data Sheet
Block Diagram of Quad-Band LNA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Cross-Section View of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Detail of Application Board Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Recommended Footprint and Stencil Layout for the TSNP-16-1 Package . . . . . . . . . . . . . . . . . . 29
Package Outline (Top, Side and Bottom View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Table 10
Table 11
Table 12
Table 13
Table 14
Table 15
Table 16
Table 17
Table 18
Table 19
Table 20
Table 21
Data Sheet
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
DC Characteristics, TA =-30 ... 85 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Band Select Truth Table, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Gain Control Truth Table, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Typical Switching Times; TA = -30 ... 85 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Typical Characteristics 880 MHz Band, TA = -30 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 13
Typical Characteristics 880 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 14
Typical Characteristics 880 MHz Band, TA = 85 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 15
Typical Characteristics 940 MHz Band, TA = -30 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 16
Typical Characteristics 940 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 17
Typical Characteristics 940 MHz Band, TA = 85 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 18
Typical Characteristics 1960 MHz Band, TA = -30 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 19
Typical Characteristics 1960 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 20
Typical Characteristics 1960 MHz Band, TA = 85 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 21
Typical Characteristics 2140 MHz Band, TA = -30 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 22
Typical Characteristics 2140 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 23
Typical Characteristics 2140 MHz Band, TA = 85 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 24
Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6
Revision 3.0, 2010-11-08
High Linearity Quad-Band UMTS LNA
(2100, 1900, 900, 800 MHz)
1
BGA748N16
Features
Main features:
•
•
•
•
•
•
•
•
•
•
Gain: 16 / -8 dB typ. in high / low gain mode (all bands)
Noise figure: 1.1 dB typ. in high gain mode
Supply current: 4.0 / 0.75 mA typ in high / low gain mode (all bands)
Standby mode (< 2 µA typ.)
Output internally matched to 50 Ω
Inputs pre-matched to 50 Ω
2 kV HBM ESD protection
Low external component count
Small leadless TSNP-16-1 package (2.3 x 2.3 x 0.39 mm)
Pb-free (RoHS compliant) package
Description
The BGA748N16 is a highly flexible, high linearity quad-band (2100, 1900, 900, 800 MHz) low noise amplifier
MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA748N16
uses an advanced biasing concept in order to achieve high linearity.
The device features dynamic gain control, temperature stabilization, standby mode and 2 kV ESD protection
on-chip as well as matching off chip. Because the matching is off chip, different UMTS bands can be easily applied.
Note: UMTS bands I / II / V / VIII is the standard band combination for this product requiring no external output
matching network.
Product Name
Package
Chip
Marking
BGA748N16
TSNP-16-1
T1541
BGA748
Data Sheet
7
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Features
921
9&&
5)*1'
9*6 55() %LDVLQJ/RJLF
&LUFXLWU\
5)287
5),1
5)287
5),1
5)287
5)*1'
5),1
9(1 9(1 5),1
5)287 %*$1B&KLSB%O'YVG
Figure 1
Data Sheet
Block Diagram of Quad-Band LNA
8
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2
Electrical Characteristics
2.1
Absolute Maximum Ratings
Table 1
Absolute Maximum Ratings
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VCC
-0.3
–
3.6
V
–
Supply current
ICC
–
–
10
mA
–
Pin voltage
VPIN
-0.3
–
VCC+0.3 V
All pins except RF input pins.
Pin voltage RF Input Pins
VRFIN
-0.3
–
0.9
V
–
RF input power
PRFIN
–
–
4
dBm
–
Junction temperature
Tj
–
–
150
°C
–
Ambient temperature range
TA
-30
–
85
°C
–
Storage temperature range
Tstg
-65
–
150
°C
–
Attention: Stresses exceeding the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.2
Thermal Resistance
Table 2
Thermal Resistance
Parameter
Symbol
Thermal resistance junction to
soldering point
2.3
ESD Integrity
Table 3
ESD Integrity
Parameter
ESD hardness HBM1)
RthJS
Values
Min.
Typ.
Max.
–
–
67
Symbol
VESD-HBM
Values
Min.
Typ.
Max.
–
2000
–
Unit
Note / Test Condition
K/W
–
Unit
Note / Test Condition
V
All pins
1) According to JESD22-A114
Data Sheet
9
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2.4
DC Characteristics
Table 4
DC Characteristics, TA =-30 ... 85 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VCC
2.6
2.8
3.0
V
–
Supply current high gain
mode
ICCHG
–
4.4
3.8
–
mA
Band 1
All other bands
Supply current low gain
mode
ICCLG
–
0.75
–
mA
All bands
Supply current standby
mode
ICCOFF
–
0.1
2.0
µA
–
Logic level high
VHI
1.5
2.8
–
V
All logic pins
Logic level low
VLO
–
0.0
0.5
V
Logic currents
ILO
–
0.1
–
µA
IHI
–
5.0
–
µA
2.5
Band Select / Gain Control Truth Table
Table 5
Band Select Truth Table, VCC = 2.8 V
All logic pins
Band 1
Band 2
Band 5
Band 8
Stand-by
VEN1
H
H
L
L
L
VEN2
H
L
H
L
L
VON
H
H
H
H
L
Table 6
VGS
Data Sheet
Gain Control Truth Table, VCC = 2.8 V
High Gain
Low Gain
H
L
10
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2.6
Supply Current Characteristics
Supply current high gain mode versus resistance of reference resistor RREF (see Figure 2 on Page 25;
low gain mode supply current is independent of reference resistor).
Supply Current Band 8 ICC = f (RREF)
VCC = 2.8 V, TA = 25 °C
10
10
9
9
8
8
7
7
6
6
ICC [mA]
ICC [mA]
Supply Current Band 5 ICC = f (RREF)
VCC = 2.8 V, TA = 25 °C
5
4
5
4
3
3
2
2
1
1
0
0
1
10
100
1
10
9
9
8
8
7
7
6
6
ICC [mA]
ICC [mA]
VCC = 2.8 V, TA = 25 °C
10
5
4
5
4
3
3
2
2
1
1
0
1
10
100
1
10
100
RREF [kΩ]
RREF [kΩ]
Data Sheet
100
Supply Current Band 1 ICC = f (RREF)
Supply Current Band 2 ICC = f (RREF)
VCC = 2.8 V, TA = 25 °C
0
10
RREF [kΩ]
RREF [kΩ]
11
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2.7
Logic Signal Characteristics
Current consumption of logic inputs VEN1, VEN2, VGS, VON
Logic currents ILOG = f(VLOG)
VCC = 2.8 V, TA = 25 °C
6
5
ILOG [µA]
4
3
2
1
0
0
0.5
1
1.5
2
2.5
3
VLOG [V]
2.8
Switching Times
Table 7
Typical Switching Times; TA = -30 ... 85 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Gainstep settling time
tGS
–
1
–
µs
Switching LG ↔ HG all bands
Bandselect settling time
tBS
–
1
–
µs
Switching from any band to a
different band (pins VEN1,2)
Power on settling time
tON
–
1
–
µs
Switching from standby mode
to ON mode (pin VON)
Data Sheet
12
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2.9
Measured RF Characteristics UMTS Band V
Table 8
Typical Characteristics 880 MHz Band, TA = -30 °C, VCC = 2.8 V1)
Symbol
Parameter
Values
Unit
Note / Test Condition
–
Min.
Typ.
Max.
869
–
894
MHz
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
–
3.1
–
mA
High gain mode
–
0.70
–
mA
Low gain mode
–
16.5
–
dB
High gain mode
–
-7.8
–
dB
Low gain mode
–
-38
–
dB
High gain mode
–
-7.8
–
dB
Low gain mode
–
0.9
–
dB
High gain mode
–
7.8
–
dB
Low gain mode
–
-15
–
dB
50 Ω, high gain mode
S11LG
–
-17
–
dB
50 Ω, low gain mode
S22HG
–
-15
–
dB
50 Ω, high gain mode
S22LG
–
-11
–
dB
50 Ω, low gain mode
Stability factor
k
–
>2.5
–
Input compression point2)
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
–
-7
–
dBm
High gain mode
–
1
–
dBm
Low gain mode
–
-7
14
–
dBm
High gain mode
Low gain mode
Pass band range
Current consumption
Gain
Reverse Isolation
2)
Noise figure
Input return loss
2)
2)
Output return loss
3)
2)
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 2 on Page 25
2) Verification based on AQL; random production test.
3) Guaranteed by device design; not tested in production.
Data Sheet
13
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2.10
Measured RF Characteristics UMTS Band V
Table 9
Typical Characteristics 880 MHz Band, TA = 25 °C, VCC = 2.8 V1)
Symbol
Parameter
Values
Unit
Note / Test Condition
–
Min.
Typ.
Max.
869
–
894
MHz
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
–
3.8
–
mA
High gain mode
–
0.75
–
mA
Low gain mode
–
16.2
–
dB
High gain mode
–
-8.0
–
dB
Low gain mode
–
-38
–
dB
High gain mode
–
-8.0
–
dB
Low gain mode
–
1.2
–
dB
High gain mode
–
8.0
–
dB
Low gain mode
–
-14
–
dB
50 Ω, high gain mode
S11LG
–
-15
–
dB
50 Ω, low gain mode
S22HG
–
-20
–
dB
50 Ω, high gain mode
S22LG
–
-11
–
dB
50 Ω, low gain mode
Stability factor
k
–
>2.7
–
Input compression point2)
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
–
-7
–
dBm
High gain mode
–
-1
–
dBm
Low gain mode
–
-6
12
–
dBm
High gain mode
Low gain mode
Pass band range
Current consumption
Gain
Reverse Isolation
2)
Noise figure
Input return loss
2)
2)
Output return loss
3)
2)
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 2 on Page 25
2) Verification based on AQL; random production test.
3) Guaranteed by device design; not tested in production.
Data Sheet
14
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2.11
Measured RF Characteristics UMTS Band V
Table 10
Typical Characteristics 880 MHz Band, TA = 85 °C, VCC = 2.8 V1)
Symbol
Parameter
Values
Unit
Note / Test Condition
–
Min.
Typ.
Max.
869
–
894
MHz
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
–
4.6
–
mA
High gain mode
–
0.80
–
mA
Low gain mode
–
15.6
–
dB
High gain mode
–
-8.5
–
dB
Low gain mode
–
-38
–
dB
High gain mode
–
-8.5
–
dB
Low gain mode
–
1.7
–
dB
High gain mode
–
8.5
–
dB
Low gain mode
–
-17
–
dB
50 Ω, high gain mode
S11LG
–
-14
–
dB
50 Ω, low gain mode
S22HG
–
-20
–
dB
50 Ω, high gain mode
S22LG
–
-11
–
dB
50 Ω, low gain mode
Stability factor
k
–
>3.2
–
Input compression point2)
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
–
-8
–
dBm
High gain mode
–
-4
–
dBm
Low gain mode
–
-6
6
–
dBm
High gain mode
Low gain mode
Pass band range
Current consumption
Gain
Reverse Isolation
2)
Noise figure
Input return loss
2)
2)
Output return loss
3)
2)
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 2 on Page 25
2) Verification based on AQL; random production test.
3) Guaranteed by device design; not tested in production.
Data Sheet
15
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2.12
Measured RF Characteristics UMTS Band VIII
Table 11
Typical Characteristics 940 MHz Band, TA = -30 °C, VCC = 2.8 V1)
Symbol
Parameter
Values
Unit
Note / Test Condition
–
Min.
Typ.
Max.
925
–
960
MHz
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
–
3.1
–
mA
High gain mode
–
0.70
–
mA
Low gain mode
–
16.5
–
dB
High gain mode
–
-7.8
–
dB
Low gain mode
–
-35
–
dB
High gain mode
–
-7.8
–
dB
Low gain mode
–
0.9
–
dB
High gain mode
–
7.8
–
dB
Low gain mode
–
-15
–
dB
50 Ω, high gain mode
S11LG
–
-13
–
dB
50 Ω, low gain mode
S22HG
–
-19
–
dB
50 Ω, high gain mode
S22LG
–
-13
–
dB
50 Ω, low gain mode
Stability factor
k
–
>2.5
–
Input compression point2)
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
–
-7
–
dBm
High gain mode
–
3
–
dBm
Low gain mode
–
-7
14
–
dBm
High gain mode
Low gain mode
Pass band range
Current consumption
Gain
Reverse Isolation
2)
Noise figure
Input return loss
2)
2)
Output return loss
3)
2)
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 2 on Page 25
2) Verification based on AQL; random production test.
3) Guaranteed by device design; not tested in production.
Data Sheet
16
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2.13
Measured RF Characteristics UMTS Band VIII
Table 12
Typical Characteristics 940 MHz Band, TA = 25 °C, VCC = 2.8 V1)
Symbol
Parameter
Values
Unit
Note / Test Condition
–
Min.
Typ.
Max.
925
–
960
MHz
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
–
3.8
–
mA
High gain mode
–
0.75
–
mA
Low gain mode
–
16.2
–
dB
High gain mode
–
-8.0
–
dB
Low gain mode
–
-36
–
dB
High gain mode
–
-8.0
–
dB
Low gain mode
–
1.2
–
dB
High gain mode
–
8.0
–
dB
Low gain mode
–
-16
–
dB
50 Ω, high gain mode
S11LG
–
-13
–
dB
50 Ω, low gain mode
S22HG
–
-28
–
dB
50 Ω, high gain mode
S22LG
–
-12
–
dB
50 Ω, low gain mode
Stability factor
k
–
>2.8
–
Input compression point2)
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
–
-6
–
dBm
High gain mode
–
1
–
dBm
Low gain mode
–
-6
12
–
dBm
High gain mode
Low gain mode
Pass band range
Current consumption
Gain
Reverse Isolation
2)
Noise figure
Input return loss
2)
2)
Output return loss
3)
2)
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 2 on Page 25
2) Verification based on AQL; random production test.
3) Guaranteed by device design; not tested in production.
Data Sheet
17
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2.14
Measured RF Characteristics UMTS Band VIII
Table 13
Typical Characteristics 940 MHz Band, TA = 85 °C, VCC = 2.8 V1)
Symbol
Parameter
Values
Unit
Note / Test Condition
–
Min.
Typ.
Max.
925
–
960
MHz
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
–
4.6
–
mA
High gain mode
–
0.80
–
mA
Low gain mode
–
15.6
–
dB
High gain mode
–
-8.5
–
dB
Low gain mode
–
-36
–
dB
High gain mode
–
-8.5
–
dB
Low gain mode
–
1.7
–
dB
High gain mode
–
8.5
–
dB
Low gain mode
–
-17
–
dB
50 Ω, high gain mode
S11LG
–
-12
–
dB
50 Ω, low gain mode
S22HG
–
-26
–
dB
50 Ω, high gain mode
S22LG
–
-12
–
dB
50 Ω, low gain mode
Stability factor
k
–
>3.2
–
Input compression point2)
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
–
-9
–
dBm
High gain mode
–
-3
–
dBm
Low gain mode
–
-5
5
–
dBm
High gain mode
Low gain mode
Pass band range
Current consumption
Gain
Reverse Isolation
2)
Noise figure
Input return loss
2)
2)
Output return loss
3)
2)
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 2 on Page 25
2) Verification based on AQL; random production test.
3) Guaranteed by device design; not tested in production.
Data Sheet
18
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2.15
Measured RF Characteristics UMTS Band II
Table 14
Typical Characteristics 1960 MHz Band, TA = -30 °C, VCC = 2.8 V1)
Symbol
Parameter
Values
Unit
Note / Test Condition
–
Min.
Typ.
Max.
1930
–
1990
MHz
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
–
3.1
–
mA
High gain mode
–
0.70
–
mA
Low gain mode
–
17.1
–
dB
High gain mode
–
-7.8
–
dB
Low gain mode
–
-35
–
dB
High gain mode
–
-7.8
–
dB
Low gain mode
–
0.8
–
dB
High gain mode
–
7.8
–
dB
Low gain mode
–
-21
–
dB
50 Ω, high gain mode
S11LG
–
-24
–
dB
50 Ω, low gain mode
S22HG
–
-29
–
dB
50 Ω, high gain mode
S22LG
–
-15
–
dB
50 Ω, low gain mode
Stability factor
k
–
>2.3
–
Input compression point2)
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
–
-8
–
dBm
High gain mode
–
2
–
dBm
Low gain mode
–
-8
17
–
dBm
High gain mode
Low gain mode
Pass band range
Current consumption
Gain
Reverse Isolation
2)
Noise figure
Input return loss
2)
2)
Output return loss
3)
2)
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 2 on Page 25
2) Verification based on AQL; random production test.
3) Guaranteed by device design; not tested in production.
Data Sheet
19
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2.16
Measured RF Characteristics UMTS Band II
Table 15
Typical Characteristics 1960 MHz Band, TA = 25 °C, VCC = 2.8 V1)
Symbol
Parameter
Values
Unit
Note / Test Condition
–
Min.
Typ.
Max.
1930
–
1990
MHz
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
–
4.0
–
mA
High gain mode
–
0.75
–
mA
Low gain mode
–
16.5
–
dB
High gain mode
–
-8.0
–
dB
Low gain mode
–
-36
–
dB
High gain mode
–
-8.0
–
dB
Low gain mode
–
1.1
–
dB
High gain mode
–
8.0
–
dB
Low gain mode
–
-20
–
dB
50 Ω, high gain mode
S11LG
–
-17
–
dB
50 Ω, low gain mode
S22HG
–
-32
–
dB
50 Ω, high gain mode
S22LG
–
-15
–
dB
50 Ω, low gain mode
Stability factor
k
–
>2.6
–
Input compression point2)
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
–
-8
–
dBm
High gain mode
–
2
–
dBm
Low gain mode
–
-7
17
–
dBm
High gain mode
Low gain mode
Pass band range
Current consumption
Gain
Reverse Isolation
2)
Noise figure
Input return loss
2)
2)
Output return loss
3)
2)
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 2 on Page 25
2) Verification based on AQL; random production test.
3) Guaranteed by device design; not tested in production.
Data Sheet
20
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2.17
Measured RF Characteristics UMTS Band II
Table 16
Typical Characteristics 1960 MHz Band, TA = 85 °C, VCC = 2.8 V1)
Symbol
Parameter
Values
Unit
Note / Test Condition
–
Min.
Typ.
Max.
1930
–
1990
MHz
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
–
4.9
–
mA
High gain mode
–
0.80
–
mA
Low gain mode
–
15.9
–
dB
High gain mode
–
-8.5
–
dB
Low gain mode
–
-36
–
dB
High gain mode
–
-8.5
–
dB
Low gain mode
–
1.5
–
dB
High gain mode
–
8.5
–
dB
Low gain mode
–
-17
–
dB
50 Ω, high gain mode
S11LG
–
-14
–
dB
50 Ω, low gain mode
S22HG
–
-23
–
dB
50 Ω, high gain mode
S22LG
–
-16
–
dB
50 Ω, low gain mode
Stability factor
k
–
>3.1
–
Input compression point2)
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
–
-9
–
dBm
High gain mode
–
0
–
dBm
Low gain mode
–
-6
10
–
dBm
High gain mode
Low gain mode
Pass band range
Current consumption
Gain
Reverse Isolation
2)
Noise figure
Input return loss
2)
2)
Output return loss
3)
2)
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 2 on Page 25
2) Verification based on AQL; random production test.
3) Guaranteed by device design; not tested in production.
Data Sheet
21
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2.18
Measured RF Characteristics UMTS Band I
Table 17
Typical Characteristics 2140 MHz Band, TA = -30 °C, VCC = 2.8 V1)
Symbol
Parameter
Values
Unit
Note / Test Condition
–
Min.
Typ.
Max.
2110
–
2170
MHz
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
–
3.6
–
mA
High gain mode
–
0.70
–
mA
Low gain mode
–
18.0
–
dB
High gain mode
–
-7.8
–
dB
Low gain mode
–
-36
–
dB
High gain mode
–
-7.8
–
dB
Low gain mode
–
0.8
–
dB
High gain mode
–
7.8
–
dB
Low gain mode
–
-18
–
dB
50 Ω, high gain mode
S11LG
–
-18
–
dB
50 Ω, low gain mode
S22HG
–
-18
–
dB
50 Ω, high gain mode
S22LG
–
-10
–
dB
50 Ω, low gain mode
Stability factor
k
–
>2.2
–
Input compression point2)
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
–
-9
–
dBm
High gain mode
–
1
–
dBm
Low gain mode
–
-8
16
–
dBm
High gain mode
Low gain mode
Pass band range
Current consumption
Gain
Reverse Isolation
2)
Noise figure
Input return loss
2)
2)
Output return loss
3)
2)
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 2 on Page 25
2) Verification based on AQL; random production test..
3) Guaranteed by device design; not tested in production.
Data Sheet
22
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2.19
Measured RF Characteristics UMTS Band I
Table 18
Typical Characteristics 2140 MHz Band, TA = 25 °C, VCC = 2.8 V1)
Symbol
Parameter
Values
Unit
Note / Test Condition
–
Min.
Typ.
Max.
2110
–
2170
MHz
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
–
4.4
–
mA
High gain mode
–
0.75
–
mA
Low gain mode
–
17.4
–
dB
High gain mode
–
-8.0
–
dB
Low gain mode
–
-36
–
dB
High gain mode
–
-8.0
–
dB
Low gain mode
–
1.1
–
dB
High gain mode
–
8.0
–
dB
Low gain mode
–
-20
–
dB
50 Ω, high gain mode
S11LG
–
-17
–
dB
50 Ω, low gain mode
S22HG
–
-19
–
dB
50 Ω, high gain mode
S22LG
–
-11
–
dB
50 Ω, low gain mode
Stability factor
k
–
>2.4
–
Input compression point2)
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
–
-10
–
dBm
High gain mode
–
2
–
dBm
Low gain mode
–
-6
16
–
dBm
High gain mode
Low gain mode
Pass band range
Current consumption
Gain
Reverse Isolation
2)
Noise figure
Input return loss
2)
2)
Output return loss
3)
2)
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 2 on Page 25
2) Verification based on AQL; random production test..
3) Guaranteed by device design; not tested in production.
Data Sheet
23
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Electrical Characteristics
2.20
Measured RF Characteristics UMTS Band I
Table 19
Typical Characteristics 2140 MHz Band, TA = 85 °C, VCC = 2.8 V1)
Symbol
Parameter
Values
Unit
Note / Test Condition
–
Min.
Typ.
Max.
2110
–
2170
MHz
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
–
5.3
–
mA
High gain mode
–
0.80
–
mA
Low gain mode
–
16.8
–
dB
High gain mode
–
-8.5
–
dB
Low gain mode
–
-36
–
dB
High gain mode
–
-8.5
–
dB
Low gain mode
–
1.4
–
dB
High gain mode
–
8.5
–
dB
Low gain mode
–
-23
–
dB
50 Ω, high gain mode
S11LG
–
-16
–
dB
50 Ω, low gain mode
S22HG
–
-17
–
dB
50 Ω, high gain mode
S22LG
–
-11
–
dB
50 Ω, low gain mode
Stability factor
k
–
>2.7
–
Input compression point2)
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
–
-11
–
dBm
High gain mode
–
1
–
dBm
Low gain mode
–
-5
11
–
dBm
High gain mode
Low gain mode
Pass band range
Current consumption
Gain
Reverse Isolation
2)
Noise figure
Input return loss
2)
2)
Output return loss
3)
2)
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 2 on Page 25
2) Verification based on AQL; random production test..
3) Guaranteed by device design; not tested in production.
Data Sheet
24
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Application Circuit and Block Diagram
3
Application Circuit and Block Diagram
3.1
UMTS Bands I, II, V and VIII Application Circuit Schematic
VON = 0 / 2.8 V
0
9 VON
VCC = 2.8 V
C9
10nF
8 RFGND1
7 VCC
VGS = 0 / 2.8 V
6 VGS RREF 5
GND
RFIN
Band II
RFIN
Band I
C1
1.8pF
Biasing & Logic
Circuitry
C2
8.2pF
10
C3
10pF
L1
2.7nH
C4
18pF
4
RFOUT2
RFIN2
11
L2
2.2nH
3
RFOUT1
RFIN1
12
2
RFGND2
RFIN
Band V
C5
2.4pF
RFOUT5
C6
18pF
13 RFIN5
14 RFIN8
L3
8.2nH
RFIN
Band VIII
C7
2.4pF
C8
18pF
15 VEN2 VEN1 16
VEN2 = 0 / 2.8 V
RFOUT8 1
RREF
27kΩ
RFOUT
Band II
RFOUT
Band I
RFOUT
Band V
RFOUT
Band VIII
VEN1 = 0 / 2.8 V
L4
7.5nH
BGA748N16_Appl_BlD.vsd
Figure 2
Application Circuit with Chip Outline (Top View)
Note: Package paddle (Pin 0) has to be RF grounded.
Table 20
Bill of Materials
Part Number
Part Type
Manufacturer
Size
Comment
L1 ... L4
Chip inductor
Various
0402
Wirewound, Q ≈ 50
C1 ... C9
Chip capacitor
Various
0402
RREF
Chip resistor
Various
0402
Data Sheet
25
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Application Circuit and Block Diagram
3.2
Pin Description
Table 21
Pin Definition and Function
Pin No.
Name
Function
0
GND
Ground connection for LNA and control circuitry
(package paddle)
1
RFOUT8
LNA output UMTS band VIII
2
RFOUT5
LNA output UMTS band V
3
RFOUT1
LNA output UMTS band I
4
RFOUT2
LNA output UMTS band II
5
RREF
Bias current reference resistor (high gain mode)
6
VGS
Gain step control voltage
7
VCC
Supply voltage
8
RFGND1
LNA emitter ground UMTS band I
9
VON
Power on control voltage
10
RFIN2
LNA input UMTS band II
11
RFIN1
LNA input UMTS band I
12
RFGND2
LNA emitter ground UMTS band II
13
RFIN5
LNA input UMTS band V
14
RFIN8
LNA input UMTS band VIII
15
VEN2
Band select control voltage
16
VEN1
Band select control voltage
Data Sheet
26
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Application Circuit and Block Diagram
3.3
Application Board
7RS/D\HUWRSYLHZ
0LGGOH/D\HUWRSYLHZ
%RWWRP/D\HUWRSYLHZ
%*$1B$SSB%RDUGYVG
Note: Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 17 mm Cu metallization, gold plated. Board
size: 32 x 45mm.
PP&RSSHU
PP3UHSUHJ)5
PP3UHSUHJ)5
PP&RSSHU
PP)5
PP3UHSUHJ)5
PP3UHSUHJ)5
PP&RSSHU
%*$1B&URVVB6HFWLRQB9LHZYVG
Figure 3
Data Sheet
Cross-Section View of Application Board
27
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Application Circuit and Block Diagram
%*$1B$SSB%RDGBGHWDLOYVG
Figure 4
Detail of Application Board Layout
Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout
as closely as possible. The position of the GND vias is critical for RF performance.
Data Sheet
28
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Physical Characteristics
4
Physical Characteristics
4.1
Package Footprint
7613)3YVG
Figure 5
Data Sheet
Recommended Footprint and Stencil Layout for the TSNP-16-1 Package
29
Revision 3.0, 2010-11-08
BGA748N16
High Linearity Quad-Band UMTS LNA
Physical Characteristics
4.2
Package Dimensions
761332YVG
Figure 6
Data Sheet
Package Outline (Top, Side and Bottom View)
30
Revision 3.0, 2010-11-08
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG