AP09T10GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product
BVDSS
100V
RDS(ON)
300mΩ
ID
G
4.4A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial power G
D
applications and suited for low voltage applications such as DC/DC
S
converters.
TO-220(P)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
4.4
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
2.8
A
12
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
12.5
W
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
10
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201110071
AP09T10GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
100
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=3A
-
-
300
mΩ
VGS=4.5V, ID=1.5A
-
-
600
mΩ
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
gfs
Forward Transconductance
VDS=10V, ID=3A
-
3
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=3A
-
5.5
8.8
nC
Qgs
Gate-Source Charge
VDS=80V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2.2
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
6.5
-
ns
tr
Rise Time
ID=3A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
10
-
ns
tf
Fall Time
VGS=10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
190
300
pF
Coss
Output Capacitance
VDS=25V
-
30
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
20
-
pF
Rg
Gate Resistance
f=1.0MHz
1
2
4
Ω
Min.
Typ.
IS=3A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
31
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
47
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09T10GP-HF
10
8
T C = 25 o C
ID , Drain Current (A)
8
ID , Drain Current (A)
T C = 150 o C
10V
7.0V
6.0V
6
5.0V
4
V G = 4.0V
10V
7.0V
6.0V
6
5.0V
4
V G = 4.0V
2
2
0
0
0
2
4
6
8
0
10
2
6
8
10
12
14
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
700
2.4
I D =3A
V G =10V
I D =1.5A
o
T C =25 C
600
2.0
Normalized RDS(ON)
RDS(ON) (mΩ )
4
V DS , Drain-to-Source Voltage (V)
500
400
1.6
1.2
0.8
300
Total Power Dissipation
200
2
4
0.4
6
8
10
-50
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
4
Normalized VGS(th) (V)
I D =250uA
IS(A)
3
T j =25 o C
T j =150 o C
2
1.2
0.8
0.4
1
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP09T10GP-HF
ID=3A
V DS = 80 V
10
300
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
400
12
6
200
C iss
4
100
2
C oss
C rss
0
0
0
2
4
6
8
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thjc)
100
ID (A)
10
Operation in this area
limited by RDS(ON)
100us
1
1ms
10ms
100ms
DC
100
o
T C =25 C
Single Pulse
Total Power Dissipation
0.1
0.1
1
10
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
Single Pulse
0.01
0.00001
1000
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
6
6
V DS =5V
5
ID , Drain Current (A)
ID , Drain Current (A)
5
4
3
2
o
4
3
2
o
T j =150 C
T j =25 C
1
1
0
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
7
8
25
50
75
100
125
150
T C , Case Temperature ( o C )
Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4