AP1000C-11 SILICON PIN DIODE DESCRIPTION: The AP1000C-11 is a Passivated Epitaxial Silicon PIN Diode Housed in a Hermetically Sealed Glass Package. This Device Iis Designed to Cover a Wide Range of Control Applications Such as RF Switching, Phase Shifting, Modulation, Duplexing Limiting and Pulse Forming. PACKAGE STYLE 01 MAXIMUM RATINGS I 100 mA V 100 V PDISS 250 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +175 C θJC 30 C/W O O O O O O CHARACTERISTICS SYMBOL NONE O TC = 25 C TEST CONDITIONS VB IR = 10 µA CJ VR = 50 V VR = 40 V MINIMUM TYPICAL MAXIMUM f = 1.0 MHz CP f = 1.0 MHz LS RS IF = 10 mA TL IF = 10 mA IR = 6.0 mA Trr IF = 20 mA IR = 100 mA 0.15 I-REGION pF 1.0 nH 1.5 Ohms 100 nS 20 nS 12 µM A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. pF 0.10 f = 500 MHz @ 90% UNITS V 100 REV. A 1/1