AP1333U
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Gate Drive
D
▼ Small Package Outline
▼ Fast Switching Speed
BVDSS
-20V
RDS(ON)
800mΩ
ID
-550mA
S
SOT-323 G
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Unit
-20
V
±12
V
3
-550
mA
3
-440
mA
Continuous Drain Current
Continuous Drain Current
1,2
IDM
Pulsed Drain Current
2.5
A
PD@TA=25℃
Total Power Dissipation
0.35
W
Linear Derating Factor
0.003
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
360
℃/W
200720041
AP1333U
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
-20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-550mA
-
-
600
mΩ
VGS=-4.5V, ID=-500mA
-
-
800
mΩ
VGS=-2.5V, ID=-300mA
-
-
1000
mΩ
V
VGS(th)
VGS=0V, ID=-250uA
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.5
-
-1.2
gfs
Forward Transconductance
VDS=-5V, ID=-500mA
-
1
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=-16V ,VGS=0V
-
-
-10
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=-500mA
-
1.7
2.7
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-16V
-
0.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
0.4
-
nC
VDS=-10V
-
5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-500mA
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
10
-
ns
tf
Fall Time
RD=20Ω
-
2
-
ns
Ciss
Input Capacitance
VGS=0V
-
66
105.6
pF
Coss
Output Capacitance
VDS=-10V
-
25
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
20
-
pF
Min.
Typ.
Max.
Unit
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t ≦ 10 sec.
Test Conditions
IS=-300mA, VGS=0V
AP1333U
2.5
2.5
- 5.0V
- 4.5V
- 3.5V
T A =25 C
-ID , Drain Current (A)
2.0
1.5
2.0
- 2.5V
1.0
V G = - 2.0V
-3.5V
1.5
-2.5V
1.0
V G = - 2.0V
0.5
0.5
0.0
0.0
0.0
0.5
1.0
1.5
2.0
0.0
2.5
0.5
1.0
1.5
2.0
2.5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
1400
I D = - 0. 3 A
1200
I D = - 0. 5 A
V G = - 4.5V
1.4
o
Normalized R DS(ON)
T A =25 C
1000
RDS(ON) (mΩ )
-5.0V
-4.5V
o
T A = 150 C
-ID , Drain Current (A)
o
800
600
1.2
1.0
0.8
400
200
0.6
1
4
7
10
-50
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.0
2.0
0.8
Normalized -VGS(th) (V)
1.5
-IS(A)
0.6
T j =150 o C
T j =25 o C
0.4
1.0
0.5
0.2
0.0
0.0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP1333U
f=1.0MHz
100
I D =-0.5A
V DS =-16V
10
C iss
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C oss
4
C rss
2
0
10
0
1
2
3
4
1
3
Q G , Total Gate Charge (nC)
5
7
9
11
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Normalized Thermal Response (R thja)
Duty factor=0.5
100us
-ID (A)
1
1ms
0.1
10ms
100ms
DC
o
T A =25 C
Single Pulse
0.01
0.2
0.1
0.05
0.1
0.02
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q