AP28G40GEM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance C C ▼ High Peak Current Capability C C ▼ Low Gate Drive ▼ Strobe Flash Applications VCE 400V ICP 150A G ▼ RoHS Compliant & Halogen-Free SO-8 E E C E G E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter Voltage 400 V VGEP Peak Gate-Emitter Voltage +6 V Pulsed Collector Current, V GE @ 3V 150 A Maximum Power Dissipation 1 W Storage Temperature Range -55 to 150 o C 150 o C ICP PD@TA=25℃ TSTG TJ 1 Operating Junction Temperature Range o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions VGE=+6V, VCE=0V Min. Typ. Max. Units - - +30 uA - - 25 uA - 3.6 9 V 0.3 - 1.2 V IGES Gate-Emitter Leakage Current ICES Collector-Emitter Leakage Current VCE=400V, VGE=0V VCE(sat) Collector-Emitter Saturation Voltage VGE=3V, ICP=150A (Pulsed) VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA Qg Total Gate Charge IC=40A - 86 138 nC Qge Gate-Emitter Charge VCE=200V - 2 - nC Qgc Gate-Collector Charge VGE=4V - 23 - nC td(on) Turn-on Delay Time VCC=320V - 220 - ns tr Rise Time IC=160A - 800 - ns td(off) Turn-off Delay Time RG=10Ω - 1.6 - µs tf Fall Time VGE=4V - 1.5 - µs Cies Input Capacitance VGE=0V - 5100 8160 pF Coes Output Capacitance VCE=30V - 38 - pF Reverse Transfer Capacitance f=1.0MHz - 27 - Cres RthJA 1 Thermal Resistance Junction-Ambient - - pF 125 o C/W Notes: 1.Surface mounted on Min. copper pad of FR4 board. Data and specifications subject to change without notice 1 201212131 AP28G40GEM-HF 160 160 IC , Collector Current (A) IC , Collector Current (A) 120 5.0V 4.0V 3.0V 2.5V T A = 150 o C 5.0V 4.0V 3.0V 2.5V V G =2.0V o T A =25 C 80 40 120 V G = 2.0V 80 40 0 0 0 2 4 6 8 0 2 4 6 8 V CE , Collector-Emitter Voltage (V) V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 6 V CE = 3 V V GE =3V 100 VCE(sat) ,Saturation Voltage(V) IC , Collector Current(A) 5 T A =150 o C o T A =25 C 80 60 40 20 0 I C =150A 4 3 I C =90A I C =75A I C =60A 2 1 0 1 2 3 4 5 6 0 20 40 V GE , Gate-Emitter Voltage (V) 60 Fig 3. Transfer Characteristics 100 120 140 160 Fig 4. Collector- Emitter Saturation Voltage v.s. Junction Temperature 6 8 o T A =25 C T A =150 o C VCE ,Collector-Emitter Voltage(V) VCE ,Collector-Emitter Voltage(V) 80 Junction Temperature ( o C) 5 4 I C = 150A 3 6 I C =150A 4 I C =90A I C =75A 2 I C =90A I C =75A 2 0 0 1 2 3 4 V GE , Gate-Emitter Voltage(V) Fig 5. Collector Current v.s. Gate-Emitter Voltage 5 6 0 1 2 3 4 5 6 V GE , Gate-Emitter Voltage(V) Fig 6. Collector Current v.s. Gate-Emitter Voltage 2 AP28G40GEM-HF f=1.0MHz 6000 160 o T A =70 C C ies ICP , Peak Collector Current (A) 5000 3000 2000 1000 0 1 5 9 13 17 21 25 29 C oes C res 33 120 80 40 0 37 0 2 4 6 8 V GE , Gate-to-Emitter Voltage (V) V CE , Collector-Emitter Voltage (V)) Fig 7. Typical Capacitance Characterisitics Fig 8. Maximum Pulse Collector Current VCE 90% RC TO THE OSCILLOSCOPE C VCE G RG VCC=320 V 10% E VGE + - 4V VGE td(on) tr Fig 9. Switching Time Test Circuit td(off) tf Fig 10. Switching Time Waveform 6 VCE TO THE C OSCILLOSCOPE G VCC=200V VGE E + 1~3mA - IG IC VGE , Gate -Emitter Voltage (V) C (pF) 4000 I CP =40A V CE =200V 5 4 3 2 1 0 0 40 80 120 160 Q G , Gate Charge (nC) Fig 11. Gate Charge Test Circuit Fig 12. Gate Charge Waveform 3