AP4563GH
Pb Free Plating Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH
D1/D2
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant
S1
G1
S2
P-CH
G2
TO-252-4L
Description
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
BVDSS
40V
RDS(ON)
30mΩ
ID
BVDSS
RDS(ON)
ID
30A
-40V
36mΩ
-27A
D1
D2
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
Units
P-channel
40
-40
V
±20
±20
V
Continuous Drain Current
3
30
-27
A
Continuous Drain Current
3
19
-17
A
100
-100
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
39
-41.7
W
Linear Derating Factor
0.31
-0.34
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c (N-CH)
Rthj-c (P-CH)
Rthj-a
Value
Units
Max.
3.2
℃/W
Max.
3
℃/W
Max.
110
℃/W
Parameter
Thermal Resistance Junction-case
3
Thermal Resistance Junction-case
3
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
200617051-1/7
AP4563GH
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
40
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.04
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=20A
-
-
30
mΩ
VGS=4.5V, ID=15A
-
-
40
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=20A
-
22
-
S
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=32V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=20A
-
10
16
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=30V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
2
td(on)
Turn-on Delay Time
VDS=20V
-
10
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
23
-
ns
tf
Fall Time
RD=20Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
1100 1760
pF
Coss
Output Capacitance
VDS=25V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.7
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=20A, VGS=0V
-
26
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
17
-
nC
2/7
AP4563GH
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-40
-
-
V
-
-0.03
-
V/℃
VGS=-10V, ID=-18A
-
-
36
mΩ
VGS=-4.5V, ID=-13A
-
-
48
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-18A
-
19
-
S
VDS=-40V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-32V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VGS=0V, ID=-250uA
o
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Max. Units
Qg
Total Gate Charge
ID=-18A
-
18
30
nC
Qgs
Gate-Source Charge
VDS=-30V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
11
-
nC
VDS=-20V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
68
-
ns
tf
Fall Time
RD=20Ω
-
36
-
ns
Ciss
Input Capacitance
VGS=0V
-
1570 2500
pF
Coss
Output Capacitance
VDS=-25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
200
-
pF
Rg
Gate Resistance
f=1.0MHz
-
8.5
13
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-18A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-18A, VGS=0V
-
33
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
26
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .
3/7
AP4563GH
N-Channel
80
80
o
10V
7.0V
T C = 25 C
10V
T C =150 o C
7.0V
60
ID , Drain Current (A)
ID , Drain Current (A)
60
5.0V
40
4.5V
20
5.0V
40
4.5V
20
V G =3.0V
V G =3.0V
0
0
0
2
4
6
8
10
0
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
8
10
Fig 2. Typical Output Characteristics
80
1.8
I D = 15 A
I D =20A
V G =10V
Normalized RDS(ON)
T C =25 o C
RDS(ON) (mΩ )
4
V DS , Drain-to-Source Voltage (V)
60
40
20
1.4
-6.3
-5
1.0
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.5
Normalized VGS(th) (V)
8
IS(A)
6
T j =150 o C
T j =25 o C
4
1.1
0.7
2
0.3
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
AP4563GH
N-Channel
f=1.0MHz
VGS , Gate to Source Voltage (V)
12
10000
I D = 20 A
V DS = 30 V
9
C iss
C (pF)
1000
6
C oss
C rss
100
3
10
0
0
5
10
15
1
20
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
ID (A)
9
V DS , Drain-to-Source Voltage (V)
10
1ms
10ms
100ms
1s
DC
o
T C =25 C
Single Pulse
1
10
100
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
1
0.1
Duty factor=0.5
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
VG
V DS =5V
ID , Drain Current (A)
40
QG
T j =25 o C
30
T j =150 o C
4.5V
QGS
QGD
20
10
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
AP4563GH
P-Channel
80
80
-10V
-7.0V
60
-5.0V
-4.5V
40
20
-10V
-7.0V
o
T C =150 C
-ID , Drain Current (A)
-ID , Drain Current (A)
T C = 25 o C
60
-5.0V
40
-4.5V
20
V G = - 3.0V
V G = - 3.0V
0
0
0
2
4
6
8
10
0
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.8
I D = -18 A
V G = - 10V
I D = -13 A
o
T C =25 C
80
Normalized RDS(ON)
RDS(ON) (mΩ)
1.4
60
40
1.0
0.6
20
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
Normalized -VGS(th) (V)
6
-IS(A)
4
T j =25 o C
T j =150 o C
2
0
1.1
0.7
0.3
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6/7
AP4563GH
P-Channel
f=1.0MHz
12
10000
-VGS , Gate to Source Voltage (V)
I D =-18A
V DS =-30V
C (pF)
9
6
C iss
1000
3
C oss
C rss
0
100
0
10
20
30
40
1
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthjc)
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
10
1ms
10ms
100ms
1s
DC
o
T C =25 C
Single Pulse
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
VG
V DS =-5V
-ID , Drain Current (A)
40
T j =25 o C
QG
T j =150 o C
-4.5V
30
QGS
QGD
20
10
Charge
Q
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7/7