AP4920GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D2
▼ Low On-resistance
D1
D2
D1
G2
S2
SO-8
S1
25V
RDS(ON)
25mΩ
ID
▼ Fast Switching
▼ RoHS Compliant & Halogen-Free
BVDSS
7A
G1
Description
D2
D1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
G2
G1
S1
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
25
V
+20
V
3
7
A
3
5.7
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
20
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201004212
AP4920GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
VGS=0V, ID=250uA
Min. Typ. Max. Units
25
-
-
V
-
0.037
-
V/℃
VGS=10V, ID=7A
-
-
25
mΩ
VGS=4.5V, ID=5.2A
-
-
35
mΩ
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=25V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=20V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
ID=7A
-
10.5
-
nC
o
IGSS
2
+100 nA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
1.9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7.5
-
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
9.5
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=10V
-
25
-
ns
tf
Fall Time
RD=15Ω
-
13.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
395
-
pF
Coss
Output Capacitance
VDS=25V
-
260
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
105
-
pF
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Min. Typ. Max. Units
VD=VG=0V , VS=1.2V
-
-
1.67
A
Tj=25℃, IS=2.1A, VGS=0V
-
-
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4920GM-HF
20
20
15
10
5
10
5
0
0
0
1
2
3
4
5
6
7
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
50
I D =7A
T A =25 ℃
I D =7A
V GS =10
V
1.6
Normalized RDS(ON)
40
RDS(ON) (mΩ )
10V
8.0V
6.0V
5.0V
V GS = 4 .0V
15
ID , Drain Current (A)
T A =25 o C
ID , Drain Current (A)
T A =150 o C
10V
8.0V
6.0V
5.0V
V GS = 4 .0V
30
1.4
1.2
1.0
20
0.8
10
0.6
3
4
5
6
7
8
9
10
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
11
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
AP4920GM-HF
8
3
7
2
5
PD (W)
ID , Drain Current (A)
6
4
3
1
2
1
0
0
25
50
75
100
T c , Case Temperature (
125
o
0
150
50
100
150
o
T c ,Case Temperature ( C)
C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
Normalized Thermal Response (Rthja)
Duty Factor = 0.5
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
10s
T A =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
P DM
0.01
t
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
DC
Rthja =135 oC/W
0.01
0.001
0.1
1
10
V DS (V)
Fig 7. Maximum Safe Operating Area
100
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
4
AP4920GM-HF
f=1.0MHz
12
10000
I D =7A
V DS =15V
VGS , Gate to Source Voltage (V)
10
8
1000
Ciss
C (pF)
6
Coss
4
100
Crss
2
10
0
0
2
4
6
8
10
12
14
16
18
1
20
5
9
13
17
21
25
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3
100.00
2.5
10.00
T j =25 o C
VGS(th) (V)
IS(A)
2
T j =150 o C
1.00
1.5
1
0.10
0.5
0.01
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
T j ,Junction Temperature (
100
o
150
C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
AP4920GM-HF
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.6x RATED VDS
G
10%
+
S
VGS
VGS
10V
-
td(on)
Fig 13. Switching Time Circuit
tr
td(off) tf
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
4.5V
0.6 x RATED VDS
QGS
G
S
QGD
VGS
+
1~ 3 mA
I
I
G
D
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
6