AP4880GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
D
▼ Fast Switching
D
D
D
▼ Simple Drive Requirement
S
S
25V
RDS(ON)
8.5mΩ
ID
G
SO-8
BVDSS
13A
S
Description
D D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
G
S S
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
3
Continuous Drain Current
3
Continuous Drain Current
1
Rating
Units
25
V
± 20
13
V
A
10
A
IDM
Pulsed Drain Current
50
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Data and specifications subject to change without notice
Max.
Value
Unit
50
℃/W
AP4880GM
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
25
-
-
V
-
0.037
-
V/℃
VGS=10V, ID=13A
-
-
8.5
mΩ
VGS=4.5V, ID=10A
-
-
15
mΩ
VDS=VGS, ID=250uA
1
-
3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=250uA
Max. Units
VDS=15V, ID=10A
-
20
-
S
o
VDS=25V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=20V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
Drain-Source Leakage Current (Tj=25 C)
nA
Qg
Total Gate Charge
ID=13A
-
±100
22.5
-
Qgs
Gate-Source Charge
VDS=15V
-
3.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
15.4
-
nC
VDS=15V
-
9
-
ns
2
2
nC
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
16
-
ns
td(off)
Turn-off Delay Time
RG=6.2Ω,VGS=10V
-
25
-
ns
tf
Fall Time
RD=15Ω
-
50
-
ns
Ciss
Input Capacitance
VGS=0V
-
813
-
pF
Coss
Output Capacitance
VDS=25V
-
516
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
224
-
pF
Min.
Typ.
VD=VG=0V , VS=1.3V
-
-
1.92
A
Tj=25℃, IS=2.3A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
AP4880GM
50
V GS =4.0V
30
10V
8.0V
6.0V
5.0V
40
20
ID , Drain Current (A)
40
ID , Drain Current (A)
50
10V
8.0V
6.0V
5.0V
10
V GS =4.0V
30
20
10
o
T C =150 o C
T C =25 C
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
23
I D =13A
T C =25 ℃
21
I D =13A
1.6
V GS =10V
Normalized R DS(ON)
19
RDS(ON) (mΩ )
17
15
13
11
1.4
1.2
1
9
0.8
7
0.6
5
-50
2
3
4
5
6
7
8
9
10
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
0
50
100
11
o
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP4880GM
15
3
2
9
PD (W)
ID , Drain Current (A)
12
6
1
3
0
0
25
50
75
100
125
150
0
50
100
150
T c , Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
100us
Normalized Thermal Response (R thja)
Duty Factor = 0.5
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
10s
T C =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja=125 oC/W
DC
0.01
0.001
0.1
1
10
V DS (V)
Fig 7. Maximum Safe Operating Area
100
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
AP4880GM
f=1.0MHz
10000
16
I D =13A
V DS =15V
12
10
C (pF)
VGS , Gate to Source Voltage (V)
14
8
1000
Ciss
6
Coss
4
Crss
2
0
0
5
10
15
20
25
30
35
40
45
50
100
1
6
11
16
21
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
3
10
T j =150 o C
VGS(th) (V)
IS(A)
2
T j =25 o C
1
1
0.1
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
o
T j , Junction Temperature( C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4880GM
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.6 x RATED VDS
G
+
10%
VGS
S
10 V
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
5V
0.6 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q