AP6923O
Advanced Power
Electronics Corp.
P-CHANNEL WITH SCHOTTKY DIODE
POWER MOSFET
▼ Low On-Resistance
A
A
A
▼ Fast Switching Characteristic
K
▼ Included Schottky Diode
S
TSSOP-8
G
S
BVDSS
-20V
RDS(ON)
50mΩ
ID
-3.5A
D
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
A
S
K
G
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage (MOSFET and Schottky))
-20
V
VKA
Reverse Voltage (Schottky)
20
V
VGS
Gate-Source Voltage (MOSFET)
ID@TA=25℃
ID@TA=70℃
± 12
V
3
- 3.5
A
3
- 2.8
A
- 30
A
1
A
Continuous Drain Current (MOSFET)
Continuous Drain Current (MOSFET)
1
IDM
Pulsed Drain Current (MOSFET)
IF
Average Forward Current (Schottky)
1
IFM
Pulsed Forward Current (Schottky)
25
A
PD@TA=25℃
Total Power Dissipation (MOSFET)
1
W
1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 125
℃
Total Power Dissipation (Schottky)
Thermal Data
Symbol
Rthj-a
Parameter
3
Value
Unit
Thermal Resistance Junction-ambient (MOSFET)
Max.
125
℃/W
Thermal Resistance Junction-ambient 3 (Schottky)
Max.
125
℃/W
Data and specifications subject to change without notice
200131025
AP6923O
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-20
-
-
V
-
0.03
-
V/℃
VGS=-4.5V, ID=-3.5A
-
-
50
mΩ
VGS=-2.5V, ID=-2.7A
-
-
85
mΩ
VDS=VGS, ID=-250uA
-0.5
-
-
V
VDS=-10V, ID=-3.5A
-
10
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=-20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=-16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 12V
-
-
±100
nA
ID= -3.5A
-
15.6
-
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=-250uA
2
o
IDSS
IGSS
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS= -10V
-
2.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS= -4.5V
-
5.2
-
nC
VDS= -10V
-
8.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID= -1A
-
9.4
-
ns
td(off)
Turn-off Delay Time
RG= 3.3Ω,VGS= -4.5V
-
66.4
-
ns
tf
Fall Time
RD= 10Ω
-
48
-
ns
Ciss
Input Capacitance
VGS=0V
-
660
-
pF
Coss
Output Capacitance
VDS=-20V
-
285
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Min.
Typ.
VD=VG=0V , VS=-1.2V
-
-
-0.83
A
IS=-0.83A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
IS
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
VSD
Test Conditions
Max. Units
Schottky Characteristics@Tj=25℃
℃
Min.
Typ.
VF
Symbol
Forward Voltage Drop
Parameter
IF=1A
Test Conditions
-
-
0.5
V
Irm
Maximum Reverse Leakage Current
Vr=20V
-
-
100
uA
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
Max. Units
AP6923O
MOSFET
32
24
-4.5V
-4.0V
-3.5V
o
T A =25 C
18
-ID , Drain Current (A)
-ID , Drain Current (A)
24
-4.5V
-4.0V
-3.5V
-3.0V
o
T A =150 C
-3.0V
16
-2.5V
8
12
-2.5V
6
V G = - 2.0V
V G =-2.0V
0
0
0
1
2
3
4
0
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
Fig 2. Typical Output Characteristics
1.6
180
I D =-3.5A
V G =-4.5V
I D = -3.5A
T A =25 o C
1.3
Normalized RDS(ON)
140
100
1.0
0.7
60
0.4
20
1
2
3
4
5
-50
6
Fig 3. On-Resistance v.s. Gate Voltage
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
1
0.9
-VGS(th) (V)
10
T j =150 o C
0
T j , Junction Temperature ( o C)
-V GS (V)
-IS (A)
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
T j =25 o C
0.1
0.6
0.01
0.3
0
0.4
0.8
-V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP6923O
15
f=1.0MHz
1000
C iss
12
V DS =-10V
V DS =-15V
V DS =-20V
9
C (pF)
-VGS , Gate to Source Voltage (V)
I D =-3.5A
C oss
6
3
C rss
100
0
0
4
8
12
16
1
20
5
9
13
17
21
25
-V DS (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty Factor=0.5
100us
10
-ID (A)
1ms
10ms
1
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
t
Single Pulse
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=208 oC/W
0.001
0.01
0.1
1
10
0.0001
100
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
-V DS (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
SCHOTTKY DIODE
10
IF - Forward Current (A)
Irm- Reverse Leakage Current (uA)
10000
1000
V KA = 20V
V KA =10V
100
T j = 1 25 o C
1
o
T j = 25 C
0.1
10
1
0.01
25
50
75
100
o
Junction Temperature ( C )
Fig 1. Reverse Leakage Current
v.s. Junction Temperature
125
0
0.2
0.4
0.6
V F - Forward Voltage Drop (V)
Fig 2. Forward Voltage Drop
0.8