BCDSEMI APD360VPTR-G1

Data Sheet
SCHOTTKY BARRIER RECTIFIER
APD360
Features
Applications
•
•
•
•
•
•
•
•
Low Forward Voltage Drop
Very Small Conduction Losses
High Surge Capability
Surge Overload Rating to 80A Peak
DO-27
Low Voltage High Frequency Inverters
DC-DC converters
Free Wheeling
Polarity Protection
DO-27 (L)
DO-214AC
Figure 1. Package Type of APD360
Jul. 2010
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
1
Data Sheet
SCHOTTKY BARRIER RECTIFIER
APD360
Pin Configuration
VP Package
(DO-27)
VPL Package
(DO-27(L))
Cathod
Anode
Cathod
Anode
VR Package
(DO-214AC)
Cathod
Anode
Figure 2. Pin Configuration of APD360 (Top View)
Jul. 2010
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
2
Data Sheet
SCHOTTKY BARRIER RECTIFIER
APD360
Ordering Information
APD360
E1: Lead Free
G1: Green
Circuit Type
Blank: Bulk
TR: Ammo or Tape & Reel
Package
VP: DO-27
VPL: DO-27(L)
VR: DO-214AC
Part Number
Package
Marking ID
Packing Type
Lead Free
Green
Lead Free
Green
APD360VP-E1
APD360VP-G1
D360VP
360VPG
Bulk
APD360VPTR-E1
APD360VPTR-G1
D360VP
360VPG
Ammo
APD360VPL-E1
APD360VPL-G1
D360VP
360VPG
Bulk
360VRG
Tape & Reel
DO-27
DO-27 (L)
DO-214AC
APD360VRTR-G1
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Jul. 2010
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
3
Data Sheet
SCHOTTKY BARRIER RECTIFIER
APD360
Absolute Maximum Ratings (TA=25°C unless otherwise noted) (Note 1)
Parameter
Symbol
Value
Unit
VRRM
60
V
VDC
60
V
Maximum RMS voltage
Average rectified forward current
0.375” (9.5mm)lead length
Non-repetitive peak forward surge
current 8.3ms single half sine-wave
on rated load
Operating junction temperature range
VRMS
42
V
IF(AV)
3.0
A
IFSM
80
A
TJ
-65 to 125
°C
Storage temperature range
TSTG
-65 to 150
°C
Maximum repetitive peak reverse
voltage
Maximum DC blocking voltage
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Thermal Characteristics (TA=25°C unless otherwise noted)
Parameter
Symbol
Typical Thermal Resistance
θJA
Value
DO-27/
DO-27(L)
DO-214AC
Unit
40
°C/W
75
Electrical Characteristics (TA=25°C unless otherwise noted)
Parameter
Symbol
Forward voltage @ IF=3.0A
Reverse Current @
rated VR (Note 2)
TA=25°C
Min
VF
Typ
0.68
Max
Units
V
0.5
IR
mA
10
TA=100°C
Note 2: Pulse Test: 300µS pulse width, 1.0% duty cycle.
Jul. 2010
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
4
Data Sheet
SCHOTTKY BARRIER RECTIFIER
APD360
Typical Performance Characteristics
(TA=25°C unless otherwise noted)
100
Instantaneous Forward Current(A)
Average For Wardrecitified Current Amperes
5
4
3
2
1
0
0
20
40
60
80
100
120
140
10
1
0.1
0
25 C
0
125 C
0
150 C
0.01
0.0
160
0.2
Figure 3. Forward Current Derating Curve
0.6
0.8
1.0
1.2
1.4
Figure 4. Typical Instantaneous Forward Characteristics
90
Instantaneous Reverse Current(µA)
100000
80
Peak forward surge current
0.4
nstantaneous Forward Voltage(V)
Ambient Temperature
70
60
50
40
30
20
10
0
10000
1000
0
25 C
0
125 C
0
150 C
100
10
1
1
10
100
0
NO of cycle at 60HZ
20
30
40
50
60
70
Instantaneous Reverse Voltage(V)
Figure 5. Maximum Non-Repetitive Surge Current
Jul. 2010
10
Figure 6. Typical Reverse Characteristics
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
5
Data Sheet
SCHOTTKY BARRIER RECTIFIER
APD360
Typical Performance Characteristics (Continued)
Junction Capacitance(pF)
400
100
10
1
10
60
Reverse voltage
Figure 7. Typical Junction Capacitance
Jul. 2010
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
6
Data Sheet
SCHOTTKY BARRIER RECTIFIER
APD360
Mechanical Dimensions
DO-27
Unit: mm(inch)
1.200(0.047)
1.300(0.051)
25.400(1.000) MIN
DIA.
8.500(0.375)
9.500(0.335)
5.000(0.197)
5.600(0.220)
DIA.
25.400(1.000) MIN
Jul. 2010
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
7
Data Sheet
SCHOTTKY BARRIER RECTIFIER
APD360
Mechanical Dimensions (Continued)
DO-27 (L)
Jul. 2010
Rev. 1. 5
Unit: mm(inch)
BCD Semiconductor Manufacturing Limited
8
Data Sheet
SCHOTTKY BARRIER RECTIFIER
APD360
Mechanical Dimensions (Continued)
DO-214AC
Unit: mm(inch)
3.990(0.157)
4.500(0.177)
2.540(0.100)
2.790(0.110)
1.250(0.049)
1.650(0.065)
0.152(0.006)
0.305(0.012)
1.980(0.078)
2.290(0.090)
0.100(0.004)
0.200(0.008)
0.760(0.030)
1.520(0.060)
4.910(0.194)
5.280(0.208)
Jul. 2010
Rev. 1. 5
BCD Semiconductor Manufacturing Limited
9
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE
IMPORTANT
NOTICE
BCD Semiconductor
BCD
Semiconductor Manufacturing
Manufacturing Limited
Limited reserves
reserves the
the right
right to
to make
make changes
changes without
without further
further notice
notice to
to any
any products
products or
or specifispecifications herein.
cations
herein. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not assume
assume any
any responsibility
responsibility for
for use
use of
of any
any its
its products
products for
for any
any
particular purpose,
particular
purpose, nor
nor does
does BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited assume
assume any
any liability
liability arising
arising out
out of
of the
the application
application or
or use
use
of any
of
any its
its products
products or
or circuits.
circuits. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not convey
convey any
any license
license under
under its
its patent
patent rights
rights or
or
other rights
other
rights nor
nor the
the rights
rights of
of others.
others.
MAIN SITE
SITE
MAIN
- Headquarters
BCD
Semiconductor Manufacturing Limited
BCD
Semiconductor
Manufacturing Limited
- Wafer
Fab
No.
1600, Zi
Xing Road,
Shanghai ZiZhu
Science-basedLimited
Industrial Park, 200241, China
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Tel:
Fax: +86-21-24162277
800,+86-21-24162266,
Yi Shan Road, Shanghai
200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen OfficeSALES OFFICE
REGIONAL
- Wafer
FabSemiconductor Manufacturing Limited
BCD
Shanghai
SIM-BCD
Semiconductor Manufacturing Co., Ltd.
- IC Design
Group
800 Yi
Shan Road,
Shanghai
200233,
China Corporation
Advanced
Analog
Circuits
(Shanghai)
Tel: +86-21-6485
1491,YiFax:
0008200233, China
8F, Zone B, 900,
Shan+86-21-5450
Road, Shanghai
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office
Shanghai
Semiconductor Manufacturing Co., Ltd., Shenzhen Office
BCD Taiwan
Semiconductor
Shenzhen SIM-BCD
Office
Office (Taiwan) Company Limited
Unit
A Room
1203, Skyworth
Bldg., Gaoxin
Ave.1.S., Nanshan
Shenzhen,
4F, 298-1,
Guang Road,(Taiwan)
Nei-Hu District,
Taipei,
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Co., Ltd.District,
Shenzhen
Office
BCDRui
Semiconductor
Company
Limited
China
Taiwan
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel:
+86-755-8826
Tel: +886-2-2656
2808
Room
E, 5F, Noble 7951
Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Taiwan
Fax:
+86-755-88267951
7865
Fax: +886-2-2656
28062808
Tel: +86-755-8826
Tel: +886-2-2656
Fax: +86-755-8826 7865
Fax: +886-2-2656 2806
USA Office
BCD Office
Semiconductor Corp.
USA
30920Semiconductor
Huntwood Ave.Corporation
Hayward,
BCD
CA 94544,
USA Ave. Hayward,
30920
Huntwood
Tel :94544,
+1-510-324-2988
CA
U.S.A
Fax:: +1-510-324-2988
+1-510-324-2788
Tel
Fax: +1-510-324-2788