APM3005NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS(ON)=4.5mΩ (typ.) @ VGS=10V RDS(ON)=7mΩ (typ.) @ VGS=4.5V • • • • G Super High Dense Cell Design D S Avalanche Rated Top View of TO-252 Reliable and Rugged D Lead Free Available (RoHS Compliant) Applications G • Power Management in Desktop Computer or DC/DC Converters S N-Channel MOSFET Ordering and Marking Information Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 ° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM3005N Lead Free Code Handling Code Temp. Range Package Code APM3005N U : APM3005N XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 1 www.anpec.com.tw APM3005NU Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA = 25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C 16 A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC TC=25°C 100 TC=100°C 75 TC=25°C 50* TC=100°C 30 TC=25°C 50 TC=100°C 20 2.5 Thermal Resistance-Junction to Case A A W °C/W 2 Mounted on PCB of 1in Pad Area IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJA TA=25°C 100 TA=100°C 75 TA=25°C 17 TA=100°C 10 TA=25°C 2.5 TA=100°C 1 Thermal Resistance-Junction to Ambient 50 A A W °C/W Mounted on PCB of Minimum Footprint IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJA Thermal Resistance-Junction to Ambient TA=25°C 100 TA=100°C 75 TA=25°C 14 TA=100°C 9 TA=25°C 1.6 TA=100°C 0.6 75 A A W °C/W Note: * Current limited by bond wire. Copyright ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 2 www.anpec.com.tw APM3005NU Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM3005NU Min. Typ. Max. Unit Drain-Source Avalanche Ratings EAS Drain-Source Avalanche Energy ID=11A, VDD=20V 30 mJ Static Characteristics BVDSS IDSS VGS(th) IGSS 30 Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current V VDS=24V, VGS=0V 1 30 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, V DS=0V RDS(ON) a Drain-Source On-state Resistance 1 1.5 µA 2 V ±100 nA VGS=10V, IDS=40A 4.5 5.5 VGS=4.5V, IDS=20A 7 8.5 ISD=20A, VGS=0V 0.7 1.3 Frequency=1.0MHz 1.5 mΩ Diode Characteristics VSD a Diode Forward Voltage V Dynamic Characteristicsb RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω Turn-off Fall Time Ω 3300 pF 1180 790 13 20 9 15 43 66 14 28 34.2 45 ns Gate Charge Characteristicsb Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V, VGS=4.5V, IDS=30A nC 7 14.8 Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 3 www.anpec.com.tw APM3005NU Typical Characteristics Drain Current 60 60 50 50 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 40 30 20 10 40 30 20 10 o TC=25 C,VG=10V o 0 TC=25 C 0 20 40 0 60 80 100 120 140 160 180 20 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance 300 100 ID - Drain Current (A) 0 it im )L n s(o Rd 10ms 100ms 10 1s DC 1 o T =25 C 0.1 c 0.1 1 10 Copyright ANPEC Electronics Corp. 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 2 1E-3 1E-4 80 Mounted on 1in pad o RθJA :50 C/W 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) Rev. B.3 - Oct., 2005 2 4 www.anpec.com.tw APM3005NU Typical Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 100 12 VGS=3.5,4,5,6,7,8,9,10V 60 3V 40 2.5V 20 10 RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 80 8 VGS=4.5V 6 VGS=10V 4 2 2V 0 0 2 4 6 8 0 10 40 60 Transfer Characteristics Gate Threshold Voltage Normalized Threshold Vlotage 1.5 60 o Tj=125 C 40 o Tj=-55 C o Tj=25 C 20 0 80 ID - Drain Current (A) 80 ID - Drain Current (A) 20 VDS - Drain-Source Voltage (V) 100 0 0 1 2 3 4 Copyright ANPEC Electronics Corp. 1.2 0.9 0.6 0.3 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) Rev. B.3 - Oct., 2005 IDS =250µA 0.0 -50 -25 5 100 5 www.anpec.com.tw APM3005NU Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.00 100 VGS = 10V IDS = 40A 1.50 IS - Source Current (A) Normalized On Resistance 1.75 1.25 1.00 0.75 0.50 o Tj=150 C 10 o Tj=25 C 1 0.25 o RON@Tj=25 C: 4.5mΩ 0.00 -50 -25 0 25 50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 75 100 125 150 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge 10 5000 Frequency=1MHz VDS=15V VGS - Gate-source Voltage (V) 9 C - Capacitance (pF) 4000 Ciss 3000 2000 Coss 1000 Crss ID = 30A 8 7 6 5 4 3 2 1 0 0 5 10 15 20 0 25 Copyright ANPEC Electronics Corp. 10 20 30 40 50 60 70 80 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Rev. B.3 - Oct., 2005 0 6 www.anpec.com.tw APM3005NU Avalanche Test Circuit and Waveforms V DS tp L V DSX(SUS) V DS DUT IA S RG V DD V DD IL tp EA S 0.01 Ω tA V Switching Time Test Circuit and Waveforms V DS RD V DS DUT 90% V GS RG V DD 10% V GS tp t d (on) t r Copyright ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 7 t d (off) t f www.anpec.com.tw APM3005NU Package Information TO-252 (Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 D1 A1 E1 Dim Millimeters Inches Min. Max. Min. Max. A 2.18 2.39 0.086 0.094 A1 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 b2 5.207 5.461 0.205 0.215 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.334 6.22 0.210 0.245 6.73 0.250 D1 E 5.2 REF 6.35 E1 0.205 REF 5.3 REF 0.265 0.209 REF e1 3.96 5.18 0.156 0.204 H 9.398 10.41 0.370 0.410 L 0.51 L1 0.64 1.02 0.025 0.040 L2 0.89 2.032 0.035 0.080 Copyright ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 0.020 8 www.anpec.com.tw APM3005NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Time Classificatin Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Large Body Small Body Average ramp-up rate 3°C/second max. (TL to TP) Preheat - Temperature Min (Tsmin) 100°C - Temperature Mix (Tsmax) 150°C - Time (min to max)(ts) 60-120 seconds Tsmax to TL - Ramp-up Rate Tsmax to TL - Temperature(TL) 183°C - Time (tL) 60-150 seconds Peak Temperature(Tp) 225 +0/-5°C 240 +0/-5°C Time within 5°C of actual Peak 10-30 seconds 10-30 seconds Temperature(tp) Ramp-down Rate 6°C/second max. 6 minutes max. Time 25°C to Peak Temperature Pb-Free Assembly Large Body Small Body 3°C/second max. 150°C 200°C 60-180 seconds 3°C/second max 217°C 60-150 seconds 245 +0/-5°C 250 +0/-5°C 10-30 seconds 20-40 seconds 6°C/second max. 8 minutes max. Note: All temperatures refer to topside of the package. Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 9 www.anpec.com.tw APM3005NU Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Application TO-252 A B C J 330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 F D D1 Po 7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 10 T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 W 16+ 0.3 - 0.1 P E 8 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05 www.anpec.com.tw APM3005NU Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 11 www.anpec.com.tw