APM2301CA P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-2.8A RDS(ON)= 56mΩ (typ.) @ VGS= -4.5V RDS(ON)= 85mΩ (typ.) @ VGS= -2.5V RDS(ON)= 106mΩ (typ.) @ VGS= -1.8V • • Super High Dense Cell Design SOT-23 Reliable and Rugged D Applications • Power Management in Notebook Computer, G Portable Equipment and Battery Powered Systems. S P Channel MOSFET Ordering and Marking Information Package Code A : SOT-23 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2301CA Lead Free Code Handling Code Temp. Range Package Code APM2301CA: XXXXX - Date Code C01X Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1 www.anpec.com.tw APM2301CA Absolute Maximum Ratings Symbol (TA = 25°C Unless Otherwise Noted) Parameter Rating VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 ID * IDM IS Continuous Drain Current * TJ TSTG PD * RθJA b A Diode Continuous Forward Current -1.3 A Maximum Junction Temperature 150 -12 Storage Temperature Range °C -55 to 150 Maximum Power Dissipation * V -2.8 VGS=-4.5V 300µs Pulsed Drain Current * Unit TA =25°C 0.83 TA =100°C 0.3 Thermal Resistance-Junction to Ambient W °C/W 150 Notes: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter (TA = 25°C Unless Otherwise Noted) Test Condition APM2301CA Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS VGS=0V, IDS=250µA RDS(ON) VSD a -1 TJ=85°C Gate Threshold Voltage VDS= VGS, IDS=-250µA Gate Leakage Current VGS=±12V, VDS=0V -30 -0.5 -0.75 V ±10 µA 70 Drain-Source On-State Resistance VGS=-2.5V, IDS=-2A 85 115 VGS=-1.8V, IDS=-1A 106 165 ISD=-1.3A, VGS=0V -0.75 -1.3 7 10 Diode Forward Voltage µA -1 56 Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd V VDS=-16V, VGS=0V VGS=-4.5V, IDS=-2.8A a -20 mΩ V b Gate-Source Charge Gate-Drain Charge Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 VDS=-10V, VGS=-4.5V, IDS=-2.8A 2 1.9 1.9 nC www.anpec.com.tw APM2301CA Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics (TA = 25°C Unless Otherwise Noted) Test Condition APM2301CA Min. Typ. Max. Unit b Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V, VDS=-10V, Frequency=1.0MHz VDD=-10V, RL=10Ω, IDS=1A, VGEN=-4.5V, RG=6Ω ISD=-2.8A, dlSD/dt =100A/µs 580 pF 100 75 4 7 13 23 35 63 20 36 ns 20 ns 7 nC Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 3 www.anpec.com.tw APM2301CA Typical Characteristics Drain Current Power Dissipation 3.0 1.0 0.9 2.5 -ID - Drain Current (A) 0.8 Ptot - Power (W) 0.7 0.6 0.5 0.4 0.3 2.0 1.5 1.0 0.2 0.5 0.1 o 0.0 o TA=25 C 0 20 40 60 0.0 80 100 120 140 160 TA=25 C,VG=-4.5V 0 20 40 60 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 2 50 Normalized Effective Transient 1 10 -ID - Drain Current (A) 80 100 120 140 160 n) s(o Rd it Lim 300µs 1ms 1 10ms 100ms 0.1 1s DC Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 2 Mounted on 1in pad o RθJA : 150 C/W o TA=25 C 0.01 0.01 0.1 1 10 1E-3 1E-4 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM2301CA Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 180 12 VGS= -3,-4, -5, -6, -7, -8, -9, -10V 160 RDS(ON) - On - Resistance (mΩ) 10 -ID - Drain Current (A) -2.5V 8 -2V 6 4 2 -1.5V 140 120 0.5 1.0 1.5 2.0 2.5 VGS= -2.5V 100 80 VGS= -4.5V 60 40 20 0 0.0 VGS= -1.8V 3.0 0 2 4 6 -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 Normalized Threshold Voltage 90 80 70 60 50 40 12 IDS= -250µA ID= -2.8A RDS(ON) - On - Resistance (mΩ) 10 -VDS - Drain-Source Voltage (V) 100 30 8 1.4 1.2 1.0 0.8 0.6 0.4 1 2 3 4 5 6 7 8 9 0.2 -50 -25 10 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM2301CA Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 10 2.0 VGS = -4.5V IDS = -2.8A 1.6 -IS - Source Current (A) Normalized On Resistance 1.8 1.4 1.2 1.0 0.8 0.6 o Tj=150 C o Tj=25 C 1 0.4 o RON@Tj=25 C: 56mΩ 0.2 -50 -25 0 25 50 0.1 0.0 75 100 125 150 0.9 1.2 1.5 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 4.5 Frequency=1MHz VDS= -10V 4.0 600 -VGS - Gate - Source Voltage (V) 700 C - Capacitance (nC) 0.6 Tj - Junction Temperature (°C) 800 Ciss 500 400 300 200 Coss 100 Crss 0 0.3 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 4 8 12 16 20 0 1 2 3 4 5 6 7 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 IDS= -2.8A 6 www.anpec.com.tw APM2301CA Packaging Information SOT-23 D B 3 E H 2 1 e S e1 A L A1 C Parameter Dim Inches Min. Max. Min. Max. A 1.00 1.30 0.039 0.051 A1 0.00 0.10 0.000 0.004 B 0.35 0.51 0.014 0.020 C 0.10 0.25 0.004 0.010 D 2.70 3.10 0.106 0.122 E 1.40 1.80 0.055 0.071 e1 0.075 TYP 1.90 TYP H 2.40 L 0.37 3.00 0.094 0.118 0.015 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb,100%Sn). Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 7 www.anpec.com.tw APM2301CA Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone TL to TP Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25° C to Peak Time Reflow Condition Profile Feature Average ramp-up rate(TL to TP) Preheat -Temperature Min (Tsmin) -Temperature Max (Tsmax) -Time (min to max) (ts) Tsmax to TL -Ramp-up Rate Time maintained above: -Temperature (TL) -Time (tL) Peak Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Time 25°C to Peak Temperature Sn-Pb Eutectic Assembly Large Body Small Body 3°C/second max. 100°C 150°C 60-120 seconds Pb-Free Assembly Large Body Small Body 3°C/second max. 150°C 200°C 60-180 seconds 3°C/second max 183°C 60-150 seconds 225 +0/-5°C 240 +0/-5°C 10-30 seconds 10-30 seconds 217°C 60-150 seconds 245 +0/-5°C 250 +0/-5°C 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 8 www.anpec.com.tw APM2301CA Reflow Condition pkg. thickness ≥ 2.5mm and all bags pkg. thickness < 2.5mm and 3 pkg. volume ≥ 350mm pkg. thickness < 2.5mm and 3 pkg. volume < 350mm Convection 220 +5/-0°C Convection 235 +5/-0°C VPR 215-219°C VPR 235 +5/-0°C IR/Convection 220 +5/-0°C IR/Convection 220 +5/-0°C Reliability test program Test Item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 9 www.anpec.com.tw APM2301CA Carrier Tape & Reel Dimensions (Cont.) Application A B C J T1 T2 W P E 178±1 60±1.0 12.0 2.5±0.15 9.0±0.5 1.4 8.0±0.3 4.0 1.75 F D D1 Po P1 Ao Bo Ko t 3.5±0.05 1.5±0.1 ϕ0.1MIN 4.0 2.0±0.05 3.1 3.0 1.3 0.2±0.03 SOT-23 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOT-23 8 5.3 3000 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 10 www.anpec.com.tw