APM4420 N-Channel Enhancement Mode MOSFET Features • • • • PinDescription 30V/12.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO − 8 D Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems . G S Ordering and Marking Information APM4420 Package Code K : SO-8 Operating Junction Temp. Range C : -55 to 125°C Handling Code TU : Tube TR : Tape & Reel Handling Code Temp. Range Package Code APM4420 K : APM4420 XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol N-Channel MOSFET (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID Maximum Drain Current – Continuous 12.5 IDM Maximum Drain Current – Pulsed 50 Unit V A ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 1 www.anpec.com.tw APM4420 Absolute Maximum Ratings Cont. Symbol Parameter PD Maximum Power Dissipation TJ Maximum Junction Temperature Rating T STG Storage Temperature Range R θjA Thermal Resistance – Junction to Ambient Electrical Characteristics Symbol (TA = 25°C unless otherwise noted) Parameter T A=25°C 2.5 T A=100°C 1.0 Unit W 150 °C -55 to 150 °C 50 °C/W (TA = 25°C unless otherwise noted) Test Condition APM4420 Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Zero Gate Voltage Drain C t Gate Threshold Voltage BVDSS IDSS VGS(th) IGSS VSDa 30 VDS=24V , VGS=0V VDS=VGS, ID=250µA 1 V 1 3 Drain-Source On-state VGS=±16V, VDS=0V VGS=10V, ID=12.5A 6 ±100 9 Resistance VGS=4.5V, ID=7A 10 13 Diode Forward Voltage ISD=2.3A, VGS=0V Gate Leakage Current RDS(ON) a VGS=0V, ID=250µA 0.6 1.3 µA V nA mΩ V b Dynamic Qg Total Gate Charge VDS=15V, ID=12.5A Qgs Gate-Source Charge VGS=5V, Qgd Gate-Drain Charge td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time VGEN=10V, RG=6Ω, RL=15Ω Ciss Coss Crss Turn-off Fall Time Input Capacitance Output Capacitance 36 nC 8 5 VDD=15V, ID=1A, Tf 28 VGS=0V VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz 13 20 9 15 43 66 14 28 3200 680 ns pF 275 Notes a b : Guaranteed by design, not subject to production testing : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 2 www.anpec.com.tw APM4420 Typical Characteristics Output Characteristics Transfer Characteristics 50 50 40 40 IDS-Drain Current (A) IDS-Drain Current (A) VGS=5,6,7,8,9,10V VGS=4V 30 30 20 20 TJ=25°C TJ=-55°C TJ=125°C 10 10 V GS=3V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VDS-Drain-to-Source Voltage (V) 4 5 6 On-Resistance vs. Drain Current 1.4 0.016 RDS(ON)-On-Resistance (Ω) IDS=250µA VGS(th)-Thershold Voltage (V) (Normalized) 3 VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.2 1.0 0.8 0.6 0.4 0.2 -50 2 0.014 0.012 V GS=4.5V 0.010 0.008 V GS=10V 0.006 0.004 0.002 -25 0 25 50 75 0.000 100 125 150 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 0 10 20 30 40 50 IDS-Drain Current (A) 3 www.anpec.com.tw APM4420 Typical Characteristics Cont. On-Resistance vs. Gate-to-Source Voltage On-Resistaence vs. Junction Temperature 0.050 1.8 IDS=12.5A RDS(ON)-On-Resistance (Ω) (Normalized) RDS (ON)-On-Resistance (Ω) 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 3 4 5 6 7 8 9 1.6 VGS=10V IDS=12.5A 1.4 1.2 1.0 0.8 0.6 0.4 -50 10 Gate Voltage (V) 0 25 50 75 100 125 150 Tj-Junction Temperature (°C) Capacitance Characteristics Gate Charge 5000 10 VDS=15V IDS = 12.5A 8 C-Capacitance (pF) VGS-Gate-to-Source Voltage (V) -25 6 4 2 4000 Ciss 3000 2000 1000 Coss Crss 0 0 10 20 30 40 50 60 70 80 0 90 5 10 15 20 25 30 VDS-Drain-to-Source Voltage (V) QG-Total Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 0 4 www.anpec.com.tw APM4420 Typical Characteristics Cont. Source-Drain Diode Forward Voltage Single Pulse Power 50 60 Power (W) ISD-Source Current (A) 50 10 TJ=25°C TJ=150°C 40 30 20 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 -2 10 1.4 -1 10 VSD-Source to Drain Voltage 0 1 10 10 2 10 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Transient Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 5 www.anpec.com.tw APM4420 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 1. 27B S C 0. 50B S C 8° 8° 6 www.anpec.com.tw APM4420 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM4420 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 SOP-8 A 330±1 Application SOP-8 F 5.5 ± 0.1 Application B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 8 www.anpec.com.tw APM4420 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.3 - Jul., 2002 9 www.anpec.com.tw