APM7316 Dual N-Channel Enhancement Mode MOSFET Features • • Pin Description 20V/6A , RDS(ON)=25mΩ(typ.) @ VGS=4.5V S1 1 8 D1 RDS(ON)=40mΩ(typ.) @ VGS=2.5V G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged SO-8 SO-8 Package D1 D1 D2 D2 Applications • G1 Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. S1 Ordering and Marking Information APM7316 Temp. Range Package Code APM7316 XXXXX N-Channel MOSFET XXXXX - Date Code Absolute Maximum Ratings Symbol S2 Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel Handling Code APM7316 K : G2 (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±16 ID* Maximum Drain Current – Continuous 6 IDM Maximum Drain Current – Pulsed 20 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 1 www.anpec.com.tw APM7316 Absolute Maximum Ratings (Cont.) Symbol (TA = 25°C unless otherwise noted) Parameter PD Maximum Power Dissipation TJ Maximum Junction Temperature Rating TA=25°C 2.5 TA=100°C 1 TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Unit W 150 °C -55 to 150 °C 50 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition Min. APM7316 Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V , IDS=250µA IDSS Zero Gate Voltage Drain Current VDS=18V , VGS=0V VGS(th) IGSS Gate Threshold Voltage Gate Leakage Current Drain-Source On-state VDS=VGS , IDS=250µA VGS=±16V , VDS=0V VGS=4.5V , IDS=6A Resistance 20 0.5 V 0.7 1 µA 1.0 V ±100 nA 25 35 VGS=2.5V , IDS=2A 40 50 Diode Forward Voltage ISD=2.3A , VGS=0V 0.7 1.1 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time VDS=10V , IDS= 1A 9.5 2.6 12 td(OFF) Tf Ciss Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Coss Crss Output Capacitance VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz RDS(ON)a VSDa Dynamic Qg Qgs Qgd td(ON) Tr Notes a b mΩ V b VGS=4.5V , nC 2.5 16 32 VDD=10V , IDS=1A , 40 74 VGEN =4.5V , RG=0.2Ω 42 18 675 178 78 35 VGS=0V ns pF 105 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 2 www.anpec.com.tw APM7316 Typical Characteristics Output Characteristics Transfer Characteristics 20 20 VGS=3,4,5,6,7,8,9,10V ID-Drain Current (A) ID-Drain Current (A) 2.5V 16 12 8 2V 16 12 8 TJ=125°C 4 4 TJ=-55°C TJ=25°C 1.5V 0 0 1 2 3 4 5 6 7 0 0.0 8 VDS - Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.50 0.07 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250uA 1.25 1.00 0.75 0.50 0.25 0.00 -50 0.06 0.05 VGS=2.5V 0.04 0.03 VGS=4.5V 0.02 0.01 -25 0 25 50 75 0.00 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 0 2 4 6 8 10 ID - Drain Current (A) 3 www.anpec.com.tw APM7316 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.10 On-Resistance vs. Junction Temperature 2.00 ID=6A RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 1.50 1.25 1.00 0.75 0.50 0.25 0.01 0.00 VGS=4.5V ID=6A 1.75 1 2 3 4 5 6 7 8 9 0.00 -50 10 VGS - Gate-to-Source Voltage (V) -25 0 75 100 125 150 Capacitance 10 1000 Frequency=1MHz V DS =10V ID=1A 8 Capacitance (pF) 800 6 4 2 0 50 TJ - Junction Temperature (°C) Gate Charge VGS-Gate-Source Voltage (V) 25 Ciss 600 400 Coss 200 0 4 8 12 16 0 20 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 Crss 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM7316 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power 20 60 48 1 TJ=150°C Power (W) IS-Source Current (A) 10 TJ=25°C 36 24 12 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 0.1 VSD -Source-to-Drain Voltage (V) 1 10 100 Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 D= 0.2 D= 0.1 0.1 D= 0.05 D= 0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 5 www.anpec.com.tw APM7316 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 1. 27B S C 0. 50B S C 8° 8° 6 www.anpec.com.tw APM7316 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) temperature Reflow Condition Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM7316 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions D P Po E t P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 8 2.1± 0.1 0.3±0.013 www.anpec.com.tw APM7316 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 9 www.anpec.com.tw