APM7313 Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/6A , RDS(ON)=21mΩ(typ.) @ VGS=10V SO-8 RDS(ON)=27mΩ(typ.) @ VGS=4.5V • S1 1 8 D1 G1 2 7 D1 Reliable and Rugged S2 3 6 D2 SO-8 Package G2 4 5 D2 Super High Dense Cell Design for Extremely Low RDS(ON) • • Top View Applications • D1 D1 D2 D2 Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Ordering and Marking Information APM 7313 P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel H a n d lin g C o d e Tem p. R ange P ackage C ode APM 7313 K : APM 7313 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Unit V ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 1 www.anpec.com.tw APM7313 Absolute Maximum Ratings (Cont.) Symbol ID * (TA = 25°C unless otherwise noted) Parameter Rating Unit Maximum Drain Current – Continuous 6 IDM Maximum Drain Current – Pulsed 24 PD Maximum Power Dissipation TA=25°C 2.5 W TA=100°C 1.0 W 150 °C -55 to 150 °C 50 °C/W TJ Maximum Junction Temperature TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient A * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM7313 Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current Gate Threshold Voltage IDSS VGS(th) IGSS Gate Leakage Current Drain-Source On-state RDS(ON)a Resistance Diode Forward Voltage VSDa VGS=0V , IDS=250µA 30 V 1 µA 1.5 2 V VGS=±20V , VDS=0V VGS=10V , IDS=3.5A nA 21 ±100 28 VGS=4.5V , IDS=2A 27 42 ISD=2A , VGS=0V 0.7 1.3 VDS=15V , IDS= 10A 30 36 VDS=24V , VGS=0V VDS=VGS , IDS=250µA 1 mΩ V b Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Turn-on Delay Time VGS=10V Tr Turn-on Rise Time VDD=15V , IDS=2A , td(OFF) Turn-off Delay Time VGEN=10V , RG=6Ω Tf Turn-off Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Notes a b nC 5.8 3.8 VGS=0V 11 22 17 33 37 68 20 38 ns 1200 VDS=25V Reverse Transfer Capacitance Frequency=1.0MHz 210 pF 95 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 2 www.anpec.com.tw APM7313 Typical Characteristics Output Characteristics Transfer Characteristics 40 30 IDS-Drain Current (A) IDS-Drain Current (A) VGS=4,4.5,6,8,10V 25 20 15 VGS=3.5V 10 V GS=3V 5 30 20 TJ=25°C TJ=125°C 10 VGS=2.5V 0 1.0 0 0 1 2 3 4 5 6 7 8 9 10 1.5 VDS-Drain-to-Source Voltage (V) 2.0 2.5 3.0 3.5 4.0 VGS-Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Threshold Voltage vs. Junction Temperature 1.2 0.050 IDS=250µA 0.045 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) TJ=-55°C 1.0 0.8 0.6 0.040 VGS=4.5V 0.035 0.030 VGS=10V 0.025 0.020 0.015 0.010 0.005 0.4 -50 -25 0 25 50 75 100 125 0.000 150 0 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 5 10 15 20 25 30 IDS-Drain Current (A) 3 www.anpec.com.tw APM7313 Typical Characteristics (Cont.) On-Resistaence vs. Junction Temperature RDS(ON)-On Resistance (Ω) (Normalized) On-Resistance vs. Gate-to-Source Voltage 0.050 IDS=3.5A RDS (ON) - On-Resistance (Ω) 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 3 4 5 6 7 8 9 10 VGS=10V IDS=3.5A 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 Gate Voltage (V) Tj-Junction Temperature (°C) Gate Charge Capacitance Characteristics 150 2000 10 V DS= 1 5 V I DS= 1 0 A Ciss 1000 8 C-Capacitance (pF) VGS-Gate-to-Source Voltage (V) 1.6 6 4 500 Coss Crss 100 2 Frequency=1MHz 0 0 5 10 15 20 25 0.1 30 10 30 VDS-Drain-to-Source Voltage (V) QG-Total Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 1 4 www.anpec.com.tw APM7313 Typical Characteristics (Cont.) Single Pulse Power Source-Drain Diode Forward Voltage 80 60 10 Power (W) ISD-Source Current (A) 100 TJ=125°C 1 40 TJ=-55°C 20 TJ=25°C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 0.1 1 VSD-Source to Drain Voltage 10 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Transient Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted D=0.02 SINGLE 0.01 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 5 www.anpec.com.tw APM7313 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 1. 27B S C 0. 50B S C 8° 8° 6 www.anpec.com.tw APM7313 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM7313 Reliability test program Test item SOLDERABILITY HOLT PCT TST ESD Latch-Up Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B, A102 MIL-STD-883D-1011.9 MIL-STD-883D-3015.7 JESD 78 Description 245°C , 5 SEC 1000 Hrs Bias @ 125 °C 168 Hrs, 100 % RH , 121°C -65°C ~ 150°C, 200 Cycles VHBM > 2KV, VMM > 200V 10ms , Itr > 100mA Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 SOP-8 A 330±1 Application SOP-8 F 5.5 ± 0.1 Application B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 8 www.anpec.com.tw APM7313 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.5 - Feb., 2003 9 www.anpec.com.tw