APM9933 Dual P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-3.5A , RDS(ON)=45mΩ(typ.) @ VGS=-4.5V -2.9A , RDS(ON)=52mΩ(typ.) @ VGS=-3.0V -2.6A , RDS(ON)=60mΩ(typ.) @ VGS=-2.7V • Super High Dense Cell Design for Extremely Low RDS(ON) • • S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Reliable and Rugged SOP − 8 SOP-8 Package S2 S1 Applications • G2 G1 Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. D1 Ordering and Marking Information APM 9933 Tem p. R ange P a ck ag e C o d e A P M 9933 XXXXX P-Channel MOSFET X X X X X - D a te C o d e Absolute Maximum Ratings Symbol D2 P ackage C ode K : S O P -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & R eel H a n d lin g C o d e A P M 9933 K : D2 D1 (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 ID* Maximum Drain Current – Continuous -3.5 IDM Maximum Drain Current – Pulsed -16 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 1 www.anpec.com.tw APM9933 Absolute Maximum Ratings (Cont.) Symbol PD TJ Parameter Maximum Power Dissipation Rating TA=25°C 2.5 TA=100°C 1.0 Maximum Junction Temperature TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Electrical Characteristics Symbol (TA = 25°C unless otherwise noted) Unit W 150 °C -55 to 150 °C 50 °C/W (TA = 25°C unless otherwise noted) Parameter Test Condition APM9933 Min. Typ. Max. Unit Static BV DSS ∆BV DSS ∆T j IDSS V GS(th) IGSS ∆V GS(th) ∆T j R DS(ON) a Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate Threshold Voltage V GS =0V , IDS=-250µA -20 ID=-250µA, Referenced to 25°C V -16 V DS =-16V , VGS =0V V DS =V GS , IDS=-250µA mV/°C -1 -0.5 -0.7 -1 V ±100 nA Gate Leakage Current V GS =±12V , V DS =0V Gate Threshold Voltage Temperature Coefficient ID=-250µA, Referenced to 25°C 2.5 V GS =-4.5V , IDS=-3.4A 45 70 V GS =-3.0V , IDS=-2.9A 52 80 V GS =-2.7V , IDS=-2.6A 60 100 Drain-Source On-state Resistance µA mV/°C mΩ ID(on) On-State Drain Current V GS =-4.5V , VDS =-5.0V g FS V SD a Forward Transconductance V DS =-4.5V , ID=-3.8A 10 S Diode Forward Voltage ISD =-2.0A , VGS=0V -0.7 -1.3 V V DS =-6V , IDS=-3.5A 12.7 15 V GS =-4.5V 1.75 Dynamic b Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Turn-off Fall Time C iss Input Capacitance C oss Output Capacitance C rss Notes a b A -10 nC 2.8 V DD =-6V , IDS =-1A , V GEN =-4.5V , R G =6Ω , R L =6Ω V GS =0V V DS =-15V Reverse Transfer Capacitance Frequency=1.0MHz 12 21 25 42 52 85 18 1290 32 300 ns pF 210 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 2 www.anpec.com.tw APM9933 Typical Characteristics Output Characteristics Transfer Characteristics 12 12 -VGS=2,3,4,5,6,7,8,9,10V 10 -ID-Drain Current (A) -ID-Drain Current (A) 10 8 -VGS=1.5V 6 4 2 8 6 TJ=125°C 4 2 TJ=25°C TJ=-55°C -VGS=1V 0 0 1 2 3 4 0 0.0 5 -VDS - Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.50 0.08 1.25 RDS(ON)-On-Resistance (Ω) -VGS(th)-Threshold Voltage (V) (Normalized) -IDS=250uA 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 0.06 -VGS=3V 0.05 -VGS=4.5V 0.04 0.03 0.02 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 0.07 0 2 4 6 8 10 12 -ID - Drain Current (A) 3 www.anpec.com.tw APM9933 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 0.14 2.00 0.12 RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) -ID=3.4A 0.10 0.08 0.06 0.04 0.02 0.00 -VGS=4.5V -ID=3.4A 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 1 2 3 4 5 6 7 8 9 0.00 -50 10 -VGS - Gate-to-Source Voltage (V) -25 0 75 100 125 150 Capacitance 2500 -VDS=6V -ID=3.5A Frequency=1MHz 4 2000 Capacitance (pF) -VGS-Gate-Source Voltage (V) 50 TJ - Junction Temperature (°C) Gate Charge 5 25 3 2 1500 Ciss 1000 1 500 0 0 Coss Crss 0 3 6 9 12 15 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 0 5 10 15 20 -VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM9933 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage Single Pulse Power 100 80 Power (W) -IS-Source Current (A) 10 1 TJ=150°C TJ=25°C 60 40 20 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 0.1 -VSD -Source-to-Drain Voltage (V) 1 10 100 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.T JM -T A =P DMZ thJA SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 5 www.anpec.com.tw APM9933 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 1 L 0.004max. Dim A Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 1. 27B S C 0. 50B S C 8° 8° 6 www.anpec.com.tw APM9933 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Average ramp-up rate(183°C to Peak) Preheat temperature 125 ± 25°C) Temperature maintained above 183°C Time within 5°C of actual peak temperature Peak temperature range Ramp-down rate Time 25°C to peak temperature Convection or IR/ Convection VPR 3°C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 10 °C /second max. 220 +5/-0°C or 235 +5/-0°C 6 °C /second max. 6 minutes max. 215~ 219°C or 235 +5/-0°C 10 °C /second max. 60 seconds Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM9933 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 SOP-8 A 330±1 Application SOP-8 F 5.5 ± 0.1 Application B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 8 www.anpec.com.tw APM9933 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.2 - Feb., 2003 9 www.anpec.com.tw