APT20M45BVR(G) 200V, 56A, 0.045Ω APT20M45BVR(G) POWER MOS V® POWER MOS V® is a new generation of high voltage N-Channel enhancement TO mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. -24 7 D3 FEATURES • Faster switching • Lower Leakage D • 100% Avalanche tested G • Popular TO-247 Package • RoHS compliant S All Ratings: TC = 25°C unless otherwise specified. Absolute Maximum Ratings Ratings Unit Drain Source Voltage 200 Volts ID Continuous Drain Current @ TC = 25°C 56 IDM Pulsed Drain Current 1 224 VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 300 Watts Linear Derating Factor 2.4 W/C° VDSS PD TJ, TSTG Parameter Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds 300 IAR Avalanche Current 1 (Repetitive and Non-Repatitive) 56 EAR Repetitive Avalanche Energy 1 30 EAS Single Pulse Avalanche Energy 4 ID(on) RDS(on) IDSS IGSS VGS(th) °C Amps mJ 1300 Static Characteristics BVDSS Volts -55 to 150 TL Symbol Amps TJ = 25°C unless otherwise specified Parameter Min Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) 200 Volts 56 Amps On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) Typ Max 0.045 Unit Ohms Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Collector Current (VGS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com μA 050-5514 Rev D 3 - 2010 Symbol APT20M45BVR(G) Dynamic Characteristics Symbol Parameter Test Conditions Min Typ Max Ciss Input Capacitance VGS = 0V 4050 4860 Coss Output Capacitance VDS = 25V 980 1375 Crss Reverse Transfer Capacitance f = 1MHz 300 450 Qg Total Gate Charge 1 VGS = 10V 130 195 Qge Gate-Source Charge Qgd Gate- Drain ("Miller") Charge td(on) Turn-on Delay Time tr td(off) tf Rise Time Turn-off Delay Time Fall Time VDD= 0.5VDSS 30 45 ID = ID[cont.]@ 25°C 55 80 VGS = 10V 12 24 VDD= 0.5VDSS 14 28 ID = ID[cont.]@ 25°C 43 70 RG = 1.6Ω 7 14 Typ Max Unit pF nC ns Source-Drain Diode Ratings and Characteristics Symbol Characteristic / Test Conditions IS Continuous Source Current (Body Diode) Min 56 ISM 1 Pulse Source Current (Body Diode) 224 VSD Diode Forward Voltage 2 (VGS = 0V, IS= -ID[Cont.]) 1.3 Unit Amps Volts trr Reverse Recovery Time (IS = -ID[Cont.], dIS/dt = 100A/μs) 280 nS Qrr) Reverse Recovery Time (IS = -ID[Cont.], dIS/dt = 100A/μs) 3.5 μC Thermal Characteristics Symbol Characteristic RθJC Junction to Case 0.42 RθJA Junction to Ambient 40 Typ Max 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting Tj = +25°C, L = 830μH, RG = 25Ω, Peak IL = 56A 2 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2% Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 050-5514 Rev D 3 - 2010 1 Min Unit C °/W APT20M45BVR(G) 050-5514 Rev D 3 - 2010 Typical Performance Curves Typical Performance Curves APT20M45BVR(G) TO-247 (B) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) Drain 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 050-5514 Rev D 3 - 2010 2.87 (.113) 3.12 (.123) Gate Drain Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.