APT6045BVFR
APT6045SVFR
APT6045BVFRG APT6045SVFRG
600V
15A
0.45 Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V® FREDFET
BVFR
TO
-2
47
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS
V® also achieves faster switching speeds through optimized gate layout.
• Faster Switching
D3PAK
SVFR
• Avalanche Energy Rated
D
• Lower Leakage
•
FAST RECOVERY BODY DIODE
G
• TO-247 or Surface Mount D PAK Package
3
S
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VDSS
ID
Parameter
APT6045B_SVFR(G)
UNIT
600
Volts
Drain-Source Voltage
15
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
250
Watts
Linear Derating Factor
2.0
W/°C
VGSM
PD
TJ,TSTG
60
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
-55 to 150
°C
300
Amps
15
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
30
4
mJ
960
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
TYP
MAX
Volts
0.45
(VGS = 10V, ID = 7.5A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
UNIT
250
Ohms
μA
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
050-7204 Rev A 1-2010
Symbol
APT6045B_SVFR(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
MIN
MAX
2600
3120
VDS = 25V
f = 1 MHz
305
425
125
180
VGS = 0V
3
Total Gate Charge
Qgs
TYP
Test Conditions
Fall Time
VGS = 10V
115
170
VDD = 300V
15
25
ID = 15A @ 25°C
52
75
VGS = 15V
10
20
VDD = 300V
9
18
ID = 15A @ 25°C
38
50
RG = 1.6Ω
6
12
TYP
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Symbol
MIN
Continuous Source Current (Body Diode)
IS
ISM
Pulsed Source Current
1
V
Diode Forward Voltage
2
SD
dv
/dt
(VGS = 0V, IS = -15A)
5
Reverse Recovery Time
(IS = -15A, di/dt = 100A/μs)
Reverse Recovery Charge
Q rr
(IS = -15A, di/dt = 100A/μs)
Peak Recovery Current
IRRM
60
(Body Diode)
Peak Diode Recovery dv/dt
t rr
15
di
(IS = -15A, /dt = 100A/μs)
Volts
15
V/ns
250
Tj = 125°C
500
1.9
Tj = 125°C
6
Tj = 25°C
15
Tj = 125°C
26
Amps
1.3
Tj = 25°C
Tj = 25°C
UNIT
ns
μC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.50
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.5
0.2
0.1
0.05
0.02
0.01
0.005
Note:
0.01
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7270 Rev A 1-2010
D=0.5
0.05
SINGLE PULSE
t1
t2
t
0.001
10-5
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
°C/W
4 Starting Tj = +25°C, L = 8.50mH, RG = 25Ω, Peak IL = 15A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID14A di/dt ≤ 700A/μs VR ≤ 600V TJ ≤ 150°C
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.1
UNIT
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
APT6045B_SVFR(G)
30
VGS=6V, 7V, 10V & 15V
24
5.5V
18
12
5V
6
4.5V
ID, DRAIN CURRENT (AMPERES)
4V
0
18
12
TJ = +125°C
6
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
12
8
4
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
18
5V
12
6
4.5V
4V
1.5
NORMALIZED TO
V
GS
1.4
= 10V @ 7.5A
1.3
1.2
VGS=10V
1.1
VGS=20V
1.0
0.9
0
6
12
18
24
30
36
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
1.2
2.5
I = 7.5A
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
5.5V
1.1
1.0
0.9
0.8
1-2010
ID, DRAIN CURRENT (AMPERES)
16
VGS=7V, 10V
24
0
5
10
15
20
25
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
24
6V
0
0
50
100
150
200
250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
30
VGS=15V
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7204 Rev A
ID, DRAIN CURRENT (AMPERES)
30
APT6045B_SVFR(G)
10,000
10μS
50
OPERATION HERE
LIMITED BY R
(ON)
DS
5,000
100μS
10
Ciss
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
100
1mS
5
10mS
1
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
0.5
50
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Crss
100
1
5 10
50 100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = 7.5A
D
VDS=120V
VDS=300V
12
VDS=480V
8
4
0
Coss
500
DC
0.1
16
1,000
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
50
TJ =+150°C
10
TJ =+25°C
5
1
.5
.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
D3PAK Package Outline
TO-247 (B) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
15.49 (.610)
16.26 (.640)
(Heat Sink)
e3 100% Sn Plated
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
050-7204 Rev A
1-2010
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Collector)
5.45 (.215) BSC
{2 Plcs.}
and Leads
are Plated
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.