APTGS50X170E2 3 Phase bridge NPT IGBT Power Module VCES = 1700V IC = 50A @ Tc = 80°C Application • AC Motor control Features Non Punch Through (NPT) Low Loss IGBT® • - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration • • • Pin out: APTGS50X170E2 (Long pins) N- U V W Benefits • • • • • • • P+ 1 2 3 4 5 6 7 8 9 10 11 12 Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile All ratings @ Tj = 25°C unless otherwise specified Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 1700 100 50 150 ±20 350 Tj = 125°C 100A@1600V TC = 25°C TC = 80°C TC = 25°C Unit V November, 2003 Symbol VCES A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGS50X170E2– Rev 0 Absolute maximum ratings APTGS50X170E2 ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Characteristic Cies Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Input Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Off Energy Reverse diode ratings and characteristics Symbol Characteristic VF Diode Forward Voltage Er Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions VGE = 0V, IC = 1mA Tj = 25°C VGE = 0V VCE = 1700V Tj = 125°C T j = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2.2 mA VGE = 20V, VCE = 0V Min Test Conditions IF = 50A VGE = 0V IF = 50A VR = 900V di/dt =750A/µs IF = 50A VR = 900V di/dt =750A/µs Min VISOL TJ TSTG TC Torque Wt RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink Package Weight Max 0.02 1 2.7 3.2 0.1 Typ 3.3 V Max Unit pF ns 30 100 100 900 30 30 Tj = 25°C 2 Tj = 125°C 4 Tj = 25°C 6 Tj = 125°C 12 Min IGBT Diode Typ ns mJ Max 2.6 -40 -40 -40 2 Unit V mJ µC Max 0.37 0.63 3400 APT website – http://www.advancedpower.com mA V nA 100 100 800 Typ 2.2 2.0 M5 Unit V 6.5 100 3500 Tj = 25°C Tj = 125°C Symbol Characteristic Junction to Case Typ 3 Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 50A RG = 30Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 50A RG = 30Ω Thermal and package characteristics RthJC Min 1700 Unit °C/W V 150 125 125 3.5 185 November, 2003 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage °C N.m g 2-3 APTGS50X170E2– Rev 0 Electrical Characteristics APTGS50X170E2 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTGS50X170E2– Rev 0 November, 2003 Package outline