MICROSEMI ARF301

ARF301
125V, 300W, 45MHz
RF POWER MOSFET
P-CHANNEL ENHANCEMENT MODE
The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package.
It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at
frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF
power transistor making the pair well suited for bridge configurations
• Specified 125 Volt, 27 MHz Characteristics:
Output Power = 300 Watts.
• High Performance
• High Voltage Breakdown and Large SOA
Gain = 15dB (Class E)
for Superior Ruggedness
Efficiency = 80%
• Low Thermal Resistance.
• RoHS Compliant
• Capacitance matched with ARF300 N-Channel
Maximum Ratings
Symbol
All Ratings: TC =25°C unless otherwise specified
Parameter
Ratings
VDSS
Drain-Source Voltage
500
VDGO
Drain-Gate Voltage
500
ID
Unit
V
Continuous Drain Current @ TC = 25°C
20
A
VGS
Gate-Source Voltage
±30
V
PD
Total Power Dissipation @ TC = 25°C
833
W
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 175
Lead Temperature: 0.063” from Case for 10 Sec.
°C
300
Static Electrical Characteristics
Symbol
Parameter
Min
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)
500
VDS(ON)
On State Drain Voltage 1 (ID(ON) = 10A, VGS = 10V)
Typ
Max
8
10
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125°C)
250
IGSS
Gate-Source Leakage Current (VDS = ±30V, VDS = 0V)
±100
gfs
Forward Transconductance (VDS = 15V, ID = 10A)
IDSS
VGS(TH)
Gate Threshold Voltage (VDS = VGS, ID = 10mA)
5
8
-2.5
- 4
Min
Typ
Unit
V
μA
nA
mhos
-5
Volts
Max
Unit
Thermal Characteristics
RθJHS
Parameter
Junction to Case
0.15
Junction to Sink (High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
0.27
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
°C/W
050-4949 Rev A 6-2008
Symbol
RθJC
Dynamic Characteristics
Symbol
ARF301
Parameter
Test Conditions
Min
Typ
Max
CISS
Input Capacitance
VGS = 0V
2000
2200
Coss
Output Capacitance
VDS = 50V
320
360
Crss
Reverse Transfer Capacitance
f = 1MHz
62
70
Max
Unit
pF
Functional Characteristics
Symbol
GPS
Characteristic
Common Source Amplifier Power Gain
η
Drain Efficiency
Ψ
Test Conditions
Min
Typ
f = 27MHz
15
17
dB
Idq = 0mA VDD = 125V
80
85
%
POUT = 300W
Electrical Ruggedness VSWR 10:1
No Damage
1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Dynamic Characteristics
36
1.0E−8
Coss
1.0E−10
Crss
28
TJ = -55°C
24
20
TJ = +25°C
16
12
8
4
0
1.0E−11
0
50
100
150
200
250
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
0
2
4
6
8
10
12
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Transfer Characteristics
100
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
(ON)
LIMITED BY R
DS
ID Max
e
Lin
Rd
s
PD
O
n
10
050-4949 Rev A 6-2008
TJ = +125°C
BVdss Line
1.0E−9
ID, DRAIN CURRENT (AMPERES)
CAPACITANCE
Ciss
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
32
TC =+25°C
TJ =+175°C
SINGLE PULSE
1
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Maximum Safe Operating Area
Unit
Dynamic Characteristics
ARF301
25
ID, DRAIN CURRENT (AMPERES)
4
3
2
-50
0
50
100
10 and 15V
7V
15
6.5V
10
6V
5
5.5V
0
150
8.0V
7.5V
20
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5, Typical Output Characteristics
TC, CASE TEMPERATURE (°C)
Figure 4, Typical Threshold Voltage vs Temperature
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
SINGLE PULSE
0
10
10-1
10-2
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 6a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4
-3
TJ (˚C)
TC (˚C)
0.048
0.037
0.064
ZEXT
Dissipated Power
(Watts)
0.0160
0.094
0.490
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 6b, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
Zin (Ω)
ZOL (Ω)
2.0
18 - j 10.6
20.9 - j 1.3
13.56
2.7 - j 4.5
17.8 - j 7.4
27.12
1.9 - j 1.6
12.3 - j 10.2
40.68
1.77 - j 0.18
8.0 - j 10
ZIN - Gate shunted with 25Ω
Idq = 0
ZOL - Conjugate of optimum load for 300 Watts output at Vdd=125V
050-4949 Rev A 6-2008
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
5
ARF301
T11 Package Outline
1.141
0.04
0.16
0.009
0.963
0.135
0.890
0.237
R0.125
0.507
0.257
0.980
D 0.125
050-4949 Rev A 6-2008
R0.050
0.100 x 4
0.140 x 6
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
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and foreign patents. US and Foreign patents pending. All Rights Reserved.