ARF301 125V, 300W, 45MHz RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE The ARF301 is a P-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF power transistor making the pair well suited for bridge configurations • Specified 125 Volt, 27 MHz Characteristics: Output Power = 300 Watts. • High Performance • High Voltage Breakdown and Large SOA Gain = 15dB (Class E) for Superior Ruggedness Efficiency = 80% • Low Thermal Resistance. • RoHS Compliant • Capacitance matched with ARF300 N-Channel Maximum Ratings Symbol All Ratings: TC =25°C unless otherwise specified Parameter Ratings VDSS Drain-Source Voltage 500 VDGO Drain-Gate Voltage 500 ID Unit V Continuous Drain Current @ TC = 25°C 20 A VGS Gate-Source Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 833 W TJ, TSTG TL Operating and Storage Junction Temperature Range -55 to 175 Lead Temperature: 0.063” from Case for 10 Sec. °C 300 Static Electrical Characteristics Symbol Parameter Min BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) 500 VDS(ON) On State Drain Voltage 1 (ID(ON) = 10A, VGS = 10V) Typ Max 8 10 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125°C) 250 IGSS Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) ±100 gfs Forward Transconductance (VDS = 15V, ID = 10A) IDSS VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 10mA) 5 8 -2.5 - 4 Min Typ Unit V μA nA mhos -5 Volts Max Unit Thermal Characteristics RθJHS Parameter Junction to Case 0.15 Junction to Sink (High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 0.27 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com °C/W 050-4949 Rev A 6-2008 Symbol RθJC Dynamic Characteristics Symbol ARF301 Parameter Test Conditions Min Typ Max CISS Input Capacitance VGS = 0V 2000 2200 Coss Output Capacitance VDS = 50V 320 360 Crss Reverse Transfer Capacitance f = 1MHz 62 70 Max Unit pF Functional Characteristics Symbol GPS Characteristic Common Source Amplifier Power Gain η Drain Efficiency Ψ Test Conditions Min Typ f = 27MHz 15 17 dB Idq = 0mA VDD = 125V 80 85 % POUT = 300W Electrical Ruggedness VSWR 10:1 No Damage 1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Dynamic Characteristics 36 1.0E−8 Coss 1.0E−10 Crss 28 TJ = -55°C 24 20 TJ = +25°C 16 12 8 4 0 1.0E−11 0 50 100 150 200 250 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage 0 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics 100 ID, DRAIN CURRENT (AMPERES) OPERATION HERE (ON) LIMITED BY R DS ID Max e Lin Rd s PD O n 10 050-4949 Rev A 6-2008 TJ = +125°C BVdss Line 1.0E−9 ID, DRAIN CURRENT (AMPERES) CAPACITANCE Ciss VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 32 TC =+25°C TJ =+175°C SINGLE PULSE 1 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Maximum Safe Operating Area Unit Dynamic Characteristics ARF301 25 ID, DRAIN CURRENT (AMPERES) 4 3 2 -50 0 50 100 10 and 15V 7V 15 6.5V 10 6V 5 5.5V 0 150 8.0V 7.5V 20 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Output Characteristics TC, CASE TEMPERATURE (°C) Figure 4, Typical Threshold Voltage vs Temperature 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 SINGLE PULSE 0 10 10-1 10-2 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 6a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 -4 -3 TJ (˚C) TC (˚C) 0.048 0.037 0.064 ZEXT Dissipated Power (Watts) 0.0160 0.094 0.490 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Figure 6b, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) Zin (Ω) ZOL (Ω) 2.0 18 - j 10.6 20.9 - j 1.3 13.56 2.7 - j 4.5 17.8 - j 7.4 27.12 1.9 - j 1.6 12.3 - j 10.2 40.68 1.77 - j 0.18 8.0 - j 10 ZIN - Gate shunted with 25Ω Idq = 0 ZOL - Conjugate of optimum load for 300 Watts output at Vdd=125V 050-4949 Rev A 6-2008 VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 5 ARF301 T11 Package Outline 1.141 0.04 0.16 0.009 0.963 0.135 0.890 0.237 R0.125 0.507 0.257 0.980 D 0.125 050-4949 Rev A 6-2008 R0.050 0.100 x 4 0.140 x 6 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.