ETC AS7C31024A

January 2001
Advance Information
AS7C1024A
AS7C31024A
®
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)
Features
• Latest 6T 0.25u CMOS technology
• 2.0V data retention
• Easy memory expansion with CE1, CE2, OE inputs
• TTL/LVTTL-compatible, three-state I/O
• 32-pin JEDEC standard packages
• AS7C1024A (5V version)
• AS7C31024A (3.3V version)
• Industrial and commercial temperatures
• Organization: 131,012 words x 8 bits
• High speed
- 300 mil SOJ
- 400 mil SOJ
- 8 × 20mm TSOP I
- 10/12/15/20 ns address access time
- 3/3/4/5 ns output enable access time
• Low power consumption: ACTIVE
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA
- 660 mW (AS7C1024A) / max @ 10 ns
- 324 mW (AS7C31024A) / max @ 10 ns
• Low power consumption: STANDBY
- 55 mW (AS7C1024A) / max CMOS
- 36 mW (AS7C31024A) / max CMOS
Pin arrangement
Input buffer
512×256×8
Array
(1,048,576)
Sense amp
Row decoder
I/O7
I/O0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
VCC
A15
CE2
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
WE
A13
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
WE
OE
CE1
CE2
Control
circuit
A9
A10
A11
A12
A13
A14
A15
A16
Column decoder
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
AS7C1024A
AS7C31024A
GND
A0
A1
A2
A3
A4
A5
A6
A7
A8
32-pin SOJ (300 mil)
32-pin SOJ (400 mil)
32-pin TSOP I
(8 x 20mm)
VCC
AS7C1024A
AS7C31024A
Logic block diagram
Selection guide
AS7C1024A-10
AS7C31024A-10
AS7C1024A-12
AS7C31024A-12
AS7C1024A-15
AS7C31024A-15
AS7C1024A-20
AS7C31024A-20
Unit
Maximum address access time
10
12
15
20
ns
Maximum output enable access time
3
3
4
5
ns
Maximum
operating current
ASAS7C1024A
120
110
100
100
mA
AS7C31024A
90
80
80
80
mA
Maximum CMOS
standby current
AS7C1024A
10
10
10
15
mA
AS7C31024A
10
10
10
15
mA
2/6/01; V.0.9
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Copyright © Alliance Semiconductor. All rights reserved.
AS7C1024A
AS7C31024A
®
Functional description
The AS7C1024A and AS7C31024A are high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as
131,012 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 3/3/4/5 ns are ideal for high
performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank systems.
When CE1 is high or CE2 is low the devices enter standby mode. If inputs are still toggling, the device will consume ISB power. If the bus is
static, then full standby power is reached (ISB1). For example, the AS7C31024A is guaranteed not to exceed 36mW under nominal full standby
conditions. All devices in this family will retain data when VCC is reduced as low as 2.0V.
A write cycle is accomplished by asserting write enable (WE) and both chip enables (CE1, CE2). Data on the input pins I/O0-I/O7 is written
on the rising edge of WE (write cycle 1) or the active-to-inactive edge of CE1 or CE2 (write cycle 2). To avoid bus contention, external devices
should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and both chip enables (CE1, CE2), with write enable (WE) high. The chips drive
I/O pins with the data word referenced by the input address. When either chip enable is inactive, output enable is inactive, or write enable is
active, output drivers stay in high-impedance mode.
Absolute maximum ratings
Parameter
Symbol
Min
Max
Unit
AS7C1024A
Vt1
–0.50
+7.0
V
AS7C31024A
Vt1
-0.50
+5.0
V
Voltage on any pin relative to GND
Both
Vt2
–0.50
VCC +0.50
V
Power dissipation
Both
PD
–
1.0
W
Storage temperature (plastic)
Both
Tstg
–65
+150
°C
Ambient temperature with VCC applied
Both
Tbias
–55
+125
°C
DC current into outputs (low)
Both
IOUT
–
20
mA
Voltage on VCC relative to GND
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Truth table
CE1
CE2
WE
OE
Data
Mode
H
X
X
X
High Z
Standby (ISB, ISB1)
X
L
X
X
High Z
Standby (ISB, ISB1)
L
H
H
H
High Z
Output disable (ICC)
L
H
H
L
DOUT
Read (ICC)
L
H
L
X
DIN
Write (ICC)
Key: X = Don’t Care, L = Low, H = High
2/6/01; V.0.9
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AS7C1024A
AS7C31024A
®
Recommended operating conditions
Parameter
Supply voltage
Input voltage
Device
Symbol
Min
Nominal
Max
Unit
AS7C1024A
VCC
4.5
5.0
5.5
V
AS7C31024A
VCC
3.0
3.3
3.6
V
ASAS7C1024A
VIH
2.2
–
VCC + 0.5
V
AS7C31024A
VIH
2.0
–
VCC + 0.5
V
VIL†
–0.5
–
0.8
V
commercial
TA
0
–
70
°C
industrial
TA
–40
–
85
°C
Ambient operating temperature
†
VILmin. = –3.0V for pulse width less than tRC/2.
DC operating characteristics (over the operating range)1
-10
-12
-15
-20
Unit
Parameter
Sym
Test conditions
Device
Input leakage
current
|ILI|
VCC = Max, VIN = GND to VCC
Both
–
1
–
1
–
1
–
1
µA
Output leakage
current
|ILO|
VCC = Max, CE1 = VIH or
CE2 = VIL, VOUT = GND to VCC
Both
–
1
–
1
–
1
–
1
µA
VCC = Max, CE1 = VIL,
CE2 = VIH, f = fMax, IOUT = 0
mA
AS7C1024A
–
120
–
110
–
100
–
100
ICC
AS7C31024A
–
90
–
80
–
80
–
80
VCC = Max, CE1 ≥ VIH and/or
CE2 ≤ VIL, VIN = VIH or VIL,
f = fMax, IOUT = 0mA
AS7C1024A
–
30
–
25
–
20
–
20
ISB
AS7C31024A
–
30
–
25
–
20
–
20
VCC = Max, CE1 ≥ VCC–0.2V
VIN ≤ GND + 0.2V or
VIN ≥ VCC –0.2V, f = 0
AS7C1024A
–
10
–
10
–
10
–
15
ISB1
AS7C31024A
–
10
–
10
–
10
–
15
VOL
IOL = 8 mA, VCC = Min
–
0.4
–
0.4
–
0.4
–
0.4
V
VOH
IOH = –4 mA, VCC = Min
2.4
–
2.4
–
2.4
–
2.4
–
V
AS7C1024A
-
1
-
1
-
1
-
5
mA
ICCDR
VCC = 2.0V
CE1 ≥ VCC–0.2V or
CE2 ≤ 0.2V
VIN ≥ VCC–0.2V or
VIN ≤ 0.2V
AS7C31024A
-
1
-
1
-
1
-
5
mA
Operating power
supply current
Standby power
supply current
Output voltage
Data retention
current
Min Max Min Max Min Max Min Max
mA
mA
mA
Capacitance (f = 1 MHz, Ta = 25 °C, VCC = NOMINAL)2
Parameter
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
CIN
A, CE1, CE2, WE, OE
VIN = 0V
5
pF
I/O capacitance
CI/O
I/O
VIN = VOUT = 0V
7
pF
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AS7C1024A
AS7C31024A
®
Read cycle (over the operating range)3,9,12
-10
Parameter
-12
-15
-20
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
Read cycle time
tRC
10
–
12
–
15
–
20
–
ns
Address access time
tAA
–
10
–
12
–
15
–
20
ns
3
Chip enable (CE1) access time
tACE1
–
10
–
12
–
15
–
20
ns
3, 12
Chip enable (CE2) access time
tACE2
–
10
–
12
–
15
–
20
ns
3, 12
Output enable (OE) access time
tOE
–
3
–
3
–
4
–
5
ns
Output hold from address change
tOH
2
–
3
–
3
–
3
–
ns
5
CE1 Low to output in low Z
tCLZ1
0
–
0
–
0
–
0
–
ns
4, 5, 12
CE2 High to output in low Z
tCLZ2
0
–
0
–
0
–
0
–
ns
4, 5, 12
CE1 Low to output in high Z
tCHZ1
–
3
–
3
–
4
–
5
ns
4, 5, 12
CE2 Low to output in high Z
tCHZ2
–
3
–
3
–
4
–
5
ns
4, 5, 12
OE Low to output in low Z
tOLZ
0
–
0
–
0
–
0
–
ns
4, 5
OE High to output in high Z
tOHZ
–
3
–
3
–
4
–
5
ns
4, 5
Power up time
tPU
0
–
0
–
0
–
0
–
ns
4, 5, 12
Power down time
tPD
–
10
–
12
–
15
–
20
ns
4, 5, 12
Key to switching waveforms
Rising input
Falling input
Undefined / don’t care
Read waveform 1 (address controlled)3,6,7,9,12
tRC
Address
tAA
tOH
DOUT
Data valid
Read waveform 2 (CE1, CE2, and OE controlled)3,6,8,9,12
tRC1
CE1
CE2
tOE
OE
DOUT
Current
supply
2/6/01; V.0.9
tOHZ
tCHZ1, tCHZ2
tOLZ
tACE1, tACE2
tCLZ1, tCLZ2
tPU
Data valid
tPD
50%
50%
Alliance Semiconductor
ICC
ISB
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AS7C1024A
AS7C31024A
®
Write cycle (over the operating range)11, 12
-10
Parameter
-12
-15
-20
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
Write cycle time
tWC
10
–
12
–
15
–
20
–
ns
Chip enable (CE1) to write end
tCW1
8
–
10
–
12
–
12
–
ns
12
Chip enable (CE2) to write end
tCW2
8
–
10
–
12
–
12
–
ns
12
Address setup to write end
tAW
8
–
9
–
10
–
12
–
ns
Address setup time
tAS
0
–
0
–
0
–
0
–
ns
Write pulse width
tWP
7
–
8
–
9
–
12
–
ns
Address hold from end of write
tAH
0
–
0
–
0
–
0
–
ns
Data valid to write end
tDW
5
–
6
–
8
–
10
–
ns
Data hold time
tDH
0
–
0
–
0
–
0
–
ns
4, 5
Write enable to output in high Z
tWZ
–
6
–
6
–
6
–
8
ns
4, 5
Output active from write end
tOW
1
–
1
–
1
–
2
–
ns
4, 5
12
Write waveform 1 (WE controlled)10,11,12
tWC
tAW
tAH
Address
tWP
WE
tAS
tDW
DIN
tDH
Data valid
tWZ
tOW
DOUT
Write waveform 2 (CE1 and CE2 controlled)10,11,12
tWC
tAW
tAH
Address
tAS
tCW1, tCW2
CE1
CE2
tWP
WE
tWZ
DIN
tDW
tDH
Data valid
DOUT
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AS7C1024A
AS7C31024A
®
Data retention characteristics (over the operating range)
Parameter
Symbol
Test conditions
VCC for data retention
VDR
Chip deselect to data retention time
tCDR
VCC = 2.0V
CE1 ≥ VCC–0.2V or
CE2 ≤ 0.2V
VIN ≥ VCC–0.2V or
VIN ≤ 0.2V
Operation recovery time
tR
Input leakage current
| ILI |
Device
Min
Max
Unit
2.0
–
V
0
–
ns
tRC
–
ns
–
1
µA
Data retention waveform
Data retention mode
VCC
VDR ≥ 2.0V
VCC
VCC
tCDR
VDR
VIH
CE1
tR
VIH
AC test conditions
–
–
–
–
Output load: see Figure B or Figure C.
Input pulse level: GND to 3.0V. See Figure A.
Input rise and fall times: 2 ns. See Figure A.
Input and output timing reference levels: 1.5V.
Thevenin equivalent:
168W
DOUT
+1.728V (5V and 3.3V)
+5V
+3.3V
480W
+3.0V
GND
90%
10%
90%
2 ns
Figure A: Input pulse
10%
DOUT
255W
C(14)
GND
Figure B: 5V Output load
320W
DOUT
255W
C(14)
GND
Figure C: 3.3V Output load
Notes
1
2
3
4
5
6
7
8
9
10
11
12
13
During VCC power-up, a pull-up resistor to VCC on CE1 is required to meet ISB specification.
This parameter is sampled and not 100% tested.
For test conditions, see AC Test Conditions, Figures A, B, and C.
tCLZ and tCHZ are specified with CL = 5pF, as in Figure C. Transition is measured ±500mV from steady-state voltage.
This parameter is guaranteed, but not 100% tested.
WE is High for read cycle.
CE1 and OE are Low and CE2 is High for read cycle.
Address valid prior to or coincident with CE1 transition Low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
CE1 or WE must be High or CE2 Low during address transitions. Either CE1 or WE asserting high terminates a write cycle.
All write cycle timings are referenced from the last valid address to the first transitioning address.
CE1 and CE2 have identical timing.
C=30pF, except all high Z and low Z parameters, C=5pF.
2/6/01; V.0.9
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AS7C1024A
AS7C31024A
®
Package dimensions
D
e
E1 E2
B
Pin 1
c
A
A1
A2
b
Seating
Plane
E
A
A1
A2
B
b
c
D
E
E1
E2
e
32-pin SOJ 300
mil
Min
Max
0.145
0.025
0.086
0.105
0.026
0.032
0.014
0.020
0.006
0.013
0.820
0.830
0.250
0.275
0.292
0.305
0.330
0.340
0.050 BSC
32-pin SOJ 400
mil
Min
Max
0.145
0.025
0.086
0.115
0.026
0.032
0.015
0.020
0.007
0.013
0.820
0.830
0.360
0.380
0.395
0.405
0.435
0.445
0.050 BSC
a;lsdfj;alksdfj;alkfdsa;lsdfj;alksdfj;alkfdsa;lsdfj;alks
dfj;alkfdsa;lsdfj;alksdfj;alkfdsa;lsdfj;alksdfj;alkfdsa
;lsdfj;alksdfj;alkfdsa;lsdfj;alksdfj;alkfdsa;lsdfj;alksd
fj;alkfdsa;lsdfj;alksdfj;alkfds
b
e
α
c
D
E
2/6/01; V.0.9
Hd
A2
L
pin 1
pin 32
pin 16
pin 17
A
A1
Alliance Semiconductor
A
A1
A2
b
c
D
e
E
Hd
L
α
32-pin TSOP 8×20 mm
Min
Max
–
1.20
0.05
0.15
0.95
1.05
0.17
0.27
0.10
0.21
18.20
18.60
0.50 nominal
7.80
8.20
19.80
20.20
0.50
0.70
0°
5°
P. 7 of 8
ASAS7C1024A
ASAS7C31024A
®
Ordering codes
Package \ Access
time
Plastic SOJ, 300 mL
Plastic SOJ, 400 mL
TSOP 8×20
Volt/Temp
10 ns
12 ns
15 ns
20 ns
5V commercial
AS7C1024A-10TJC
AS7C1024A-12TJC
AS7C1024A-15TJC
AS7C1024A-20TJC
5V industrial
AS7C1024A-10TJI
AS7C1024A-12TJI
AS7C1024A-15TJI
AS7C1024A-20TJI
3.3V commercial
AS7C31024A-10TJC AS7C31024A-12TJC
AS7C31024A-15TJC
AS7C31024A-20TJC
3.3V industrial
AS7C31024A-10TJI
AS7C31024A-12TJI
AS7C31024A-15TJI
AS7C31024A-20TJI
5V commercial
AS7C1024A-10JC
AS7C1024A-12JC
AS7C1024A-15JC
AS7C1024A-20JC
5V industrial
AS7C1024A-10JI
AS7C1024A-12JI
AS7C1024A-15JI
AS7C1024A-20JI
3.3V commercial
AS7C31024A-10JC
AS7C31024A-12JC
AS7C31024A-15JC
AS7C31024A-20JC
3.3V industrial
AS7C31024A-10JI
AS7C31024A-12JI
AS7C31024A-15JI
AS7C31024A-20JI
5V commercial
AS7C1024A-10TC
AS7C1024A-12TC
AS7C1024A-15TC
AS7C1024A-20TC
5V industrial
AS7C1024A-10TI
AS7C1024A-12TI
AS7C1024A-15TI
AS7C1024A-20TI
3.3V commercial
AS7C31024A-10TC
AS7C31024A-12TC
AS7C31024A-15TC
AS7C31024A-20TC
3.3V industrial
AS7C31024A-10TI
AS7C31024A-12TI
AS7C31024A-15TI
AS7C31024A-20TI
Part numbering system
AS7C
X
1024
–XX
X
X
SRAM
prefix
Blank=5V CMOS
3=3.3V CMOS
Device
number
Access
time
Package:T=TSOP 8×20
J=SOJ 400 mil
TJ=SOJ 300 mil
Temperature range
C = Commercial, 0°C to 70°C
I = Industrial, -40°C to 85°C
2/6/01; V.0.9
Alliance Semiconductor
P. 8 of 8
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product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. Alliance assumes no
responsibility for any errors that may appear in this document. The data contained herein represents Alliance’s best data and/or estimates at the time of issuance. Alliance reserves the right to
change or correct this data at any time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The information in this
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