ASB0320/30/40 SMD Schottky Barrier Diode Features General Description IO = 350mA 0603(1608) VR = 20V to 40V 0.071(1.80) 0.063(1.60) - Low forward voltage 0.039(1.00) 0.031(0.80) - Designed for mounting on small surface. - Extremely thin package. 0.033(0.85) 0.027(0.70) - Majority carrier conduction. - Lead-free device 0.010(0.25)Typ. 0.012(0.30)Typ. 0.014(0.35)Typ. Dimensions in inches and (millimeter) P+ 1005(2512) 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) Mechanical Data - Case : 0603(1608) 1005(2512) standard package, 0.035(0.90) 0.027(0.70) molded plastic. 0.014(0.35)Typ. - Terminals : Gold plated, solderable per MIL-STD-750, method 2026. 0.012(0.30)Typ. - Polarity : Indicated by cathode band. 0.014(0.35)Typ. - Mounting position : Any. - Weight : BD:0.003gram (approximately) Dimensions in inches and (millimeter) BF:0.006gram (approximately) Ordering information A Feature SB : Schottky Barrier XX 03X0 XX Part No. 2: ASB0320 3: ASB0330 4: ASB0340 Package type BD-0603 BF-1005 This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Aug 2, 2004 1/3 ASB0320/30/40 SMD Schottky Barrier Diode Maximum Rating (at TA=25ºC unless otherwise noted) Symbol Parameter ASB0320 ASB0330 ASB0340 Unit VRRM, VR Repetitive peak reverse voltage Reverse voltage 20 30 40 V VR(RMS) RMS reverse voltage 14 21 28 V IO Average forward rectified current 350 mA IFRM Repetitive peak forward current 450 mA IFSM Forward current, surge peak 8.3 ms single half sine-wave 1.5 A TSTG Storage temperature -40 to +125 ºC Tj Junction temperature -40 to +125 ºC Electrical Characteristics (at TA=25ºC unless otherwise noted) Symbol Parameter VF Forward voltage IR Reverse current CT Capacitance between terminals Trr Reverse recovery time ASB0320 ASB0330 ASB0340 Conditions Min. Typ. Max. IF=20mA - - 0.37 IF=200mA - - 0.6 VR=10V VR=20V VR=30V - - 5 5 5 uA - 50 - pF - 6.4 - nS f=1MHz, and 0 VDC reverse voltage IF=IR=10mA, Irr=0.1 × IR, RL=100 ohm Anachip Corp. www.anachip.com.tw Unit V Rev. 1.0 Aug 2, 2004 2/3 ASB0320/30/40 SMD Schottky Barrier Diode Rating And Characteristic Curves Fig. 1 – Forward characteristics Fig. 2 – Capacitance between terminals characteristics Fig. 3 – Current derating curve Marking Information BH ASB0320 BJ ASB0330 BK ASB0340 Anachip Corp. www.anachip.com.tw Rev. 1.0 Aug 2, 2004 3/3