HELP3DC TM AWT6631 UMTS2100 (Band 1) LTE/WCDMA/CDMA/TD-SCDMA Linear PAM Data Sheet - Rev 2.7 FEATURES • CDMA/EVDO, WCDMA/HSPA, LTE and TD-SCDMA Compliant • 3rd Generation HELPTM technology • High Efficiency (R99 waveform): • 41 % @ POUT = +28.25 dBm • 24 % @ POUT = +17 dBm AWT6631 • Simpler Calibration with only 2 Bias Modes • Optimized for SMPS Supply • Low Quiescent Current: 8 mA • Low Leakage Current in Shutdown Mode: <4 µA • Internal Voltage Regulator 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module • Integrated “daisy chainable” directional couplers with CPLIN and CPLOUT Ports • Optimized for a 50 Ω System • Low Profile Miniature Surface Mount Package • Internal DC blocks on IN/OUT RF ports that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, which increases handset talk and standby time. The self-contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. • 1.8 V Control Logic • RoHS Compliant Package, 260 oC MSL-3 APPLICATIONS • Wireless Handsets and Data Devices for: • WCDMA/HSPA/LTE IMT-Band • CDMA/EVDO Bandclass 6 • TD-SCDMA 1.82/2.0 GHz Band • TD - LTE Band 33, 34, and 39 GND at Slug (pad) VBATT 1 RFIN 2 VMODE2 (N/C) 3 VMODE1 VEN 10 VCC PRODUCT DESCRIPTION The AWT6631 PA is designed to provide highly linear output for WCDMA, CDMA , LTE and TD-SCDMA handsets and data devices with high efficiency at both high and low power modes. This HELP3DCTM PA can be used with an external switch mode power supply (SMPS) to improve its efficiency and reduce current consumption further at medium and low output powers. A “daisy chainable” directional coupler is integrated in the module thus eliminating the need of external couplers. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. There are two selectable bias modes 03/2012 9 RFOUT 8 CPLIN 4 7 GND 5 6 CPLOUT CPL Bias Control Voltage Regulation Figure 1: Block Diagram AWT6631 VBATT 1 10 RFIN 2 9 RFOUT VMODE2 (N/C) 3 8 CPLIN VMODE1 4 7 GND VEN 5 6 CPLOUT Figure 2: Pinout (X-ray Top View) Table 1: Pin Description PIN NAME DESCRIPTION 1 VBATT Battery Voltage 2 RFIN RF Input 3 2 VMODE2 (N/C) No Connection Mode Control Voltage 1 4 VMODE1 5 VEN 6 CPLOUT 7 GND Ground 8 CPLIN Coupler Input 9 RFOUT RF Output 10 VCC PA Enable Voltage Coupler Output Supply Voltage Data Sheet - Rev 2.7 03/2012 VCC AWT6631 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VCC) 0 +5 V Battery Voltage (VBATT) 0 +6 V Control Voltages (VMODE1, VENABLE) 0 +3.5 V RF Input Power (PIN) - +10 dBm -40 +150 °C Storage Temperature (TSTG) Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNITS Supply Voltage (VCC) +0.5 +3.4 +4.35 V POUT ≤ +28.25 dBm Battery Voltage (VBATT) +3.1 +3.4 +4.35 V POUT ≤ +28.25 dBm Enable Voltage (VENABLE) +1.35 0 +1.8 0 +3.1 +0.5 V PA “on” PA “shut down” Mode Control Voltage (VMODE1) +1.35 0 +1.8 0 +3.1 +0.5 V Low Bias Mode High Bias Mode -30 - +90 °C Case Temperature (TC) COMMENTS The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. 3 Data Sheet - Rev 2.7 03/2012 AWT6631 Table 4: Electrical Specifications - WCDMA Operation (R99 waveform) (TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNITS COMMENTS 1920 - 1980 MHz UMTS Band 1 27.45 16.2 28.25 17 28.25 17 dBm 25 12 27 13 30 16 dB HPM, POUT = 28.25 dBm LPM, POUT = 17 dBm ACLR1 at 5 MHz offset (2) - -41 -42 -37 -38 dBc HPM, POUT = 28.25 dBm LPM, POUT = 17 dBm ACLR2 at 10 MHz offset (2) - -55 -55 -48 -48 dBc HPM, POUT = 28.25 dBm LPM, POUT = 17 dBm Power-Added Efficiency (2) 37 21 41 24 - % HPM, POUT = 28.25 dBm LPM, POUT = 17 dBm Quiescent Current (Icq) Low Bias Mode - 9 14 mA VMODE1 = +1.8 V Mode Control Current - 0.3 0.5 mA through VMODE pin, VMODE1 = 1.8 V Enable Current - 0.3 0.5 mA through VENABLE pin BATT Current - 2.5 5 mA through VBATT pin, VMODE1 = +1.8 V Leakage Current - 4 7 µA VBATT = +4.2 V, VCC = +4.2 V VENABLE = 0 V, VMODE1 = 0 V Noise in Receive Band (3) - -137 -143 -135 -138 dBm/ Hz Harmonics 2fO 3fO, 4fO - -39 -55 -35 -50 dBc Input Impedance - - 2:1 VSWR Coupling Factor - 20 - dB Directivity - 20 - dB Coupler IN-OUT Daisy Chain Insertion Loss - <0.25 - dB 698 - 2620 MHz Pin 8 to 6 Shutdown Mode Operating Frequency (f) RF Output Power (Pmax) R99 WCDMA, HPM R99 WCDMA, LPM (1) Gain Spurious Output Level (all suprious outputs) Load mismatch stress with no permanent degradation of failure Phase Delta (HPM-LPM) POUT < +28.25 dBm, VMODE1 = 0 V POUT < 17 dBm, VMODE1 = +1.8 V POUT < +28.25 dBm - - -70 dBc POUT ≤ +28.25 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions 8:1 - - VSWR Applies over full operating range - 10 - Deg Notes: (1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB. (2) ACLR and Efficiency measured at 1950 MHz. (3) Noise measured at 2110 MHz to 2170 MHz. 4 3GPP TS 24.121-1, Rel 8 Table C.11.1.3, for WCDMA Subtest 1 Data Sheet - Rev 2.7 03/2012 AWT6631 Table 5: Electrical Specifications - LTE Operation (RB = 12, START = 0, QPSK) (TC = +25 °C, VCC = VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNITS COMMENTS Operating Frequency (f) 1920 - 1980 MHz UMTS Band 1 RF Output Power (Pmax) (1) LTE, HPM LTE, LPM 26.45 15.2 27.25 16 27.25 16 dBm TS 36.101 Rel 8 for LTE 25 12 27 13 30 16 dB HPM, POUT = 27.25 dBm LPM, POUT = 16 dBm ACLR E-UTRA (2) at ± 10 MHz offset - -38 -38 - dBc HPM, POUT = 27.25 dBm LPM, POUT = 16 dBm ACLR1 UTRA (2) at ± 7.5 MHz offset - -39 -39 - dBc HPM, POUT = 27.25 dBm LPM, POUT = 16 dBm ACLR2 UTRA (2) at ± 12.5 MHz offset - -60 -60 - dBc HPM, POUT = 27.25 dBm LPM, POUT = 16 dBm Power-Added Efficiency (2) - 36 22 - % HPM, POUT = 27.25 dBm LPM, POUT = 16 dBm Noise emissions B34 - -38 -35 LTE NS_05 PHS emissions - -48 -42 Gain Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure dBm/ 300 kHz 2010 - 2025 MHz, 100 RB QPSK LTE signal centered at 1970 MHz at LTE max power 1884.5 - 1919.6 MHz - - <-70 dBc POUT ≤ +27.25 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions 8:1 - - VSWR Applies over full operating range Notes: (1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB. (2) ACLR and Efficiency measured at 1950 MHz. 5 dBm/ MHz Data Sheet - Rev 2.7 03/2012 AWT6631 Table 6: Electrical Specifications - CDMA Operation (CDMA2000, RC-1) (TC = +25 °C, VCC = VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNITS COMMENTS Operating Frequency (f) 1920 - 1980 MHz Band Class 6 RF Output Power (Pmax) (1) CDMA, HPM CDMA, LPM 26.7 15.7 27.5 16.5 - dBm CDMA2000, RC-1 25 12 27 13 30 16 dB HPM, POUT = 27.5 dBm LPM, POUT = 16.5 dBm Adjacent Channel Power (2) at +1.25 MHz offset Primary Channel BW - 1.23 MHz Adjacent Channel BW = 30 kHz - -50 -53 - dBc HPM, POUT = 27.5 dBm LPM, POUT = 16.5 dBm Adjacent Channel Power (2) at +1.98 MHz Primary Channel BW = 1.23 MHz Adjacent Channel BW = 30 kHz - -55 -59 - dBc HPM, POUT = 27.5 dBm LPM, POUT = 16.5 dBm Power-Added Efficiency (2) - 38 23 - % HPM, POUT = 27.5 dBm LPM, POUT = 16.5 dBm Gain Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure - - -70 dBc POUT ≤ +27.5 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions 8:1 - - VSWR Applies over full operating range Notes: (1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB. (2) ACLR and Efficiency measured at 1950 MHz. Table 7: Electrical Specifications - EVDO Rev. B Operation (TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system, [10001] or [10101] Waveform) PARAMETER MIN TYP MAX Spurious in PHS Band (1884.5 - 1919.6 MHz) - -45 -41 Intermodulation IM3 - -23 -13 6 UNIT COMMENTS dBm/300 KHz HPM, +18 dBm dBm/MHz Data Sheet - Rev 2.7 03/2012 HPM, +18 dBm AWT6631 Table 8: Electrical Specifications - TD-LTE Operation, Band 39 (10 MHz QPSK, 12 RB, Start = 0) (TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNITS Operating Frequency (f) 1900 1880 - 1920 1920 MHz UMTS Band 33 UMTS Band 39 26 15.5 27 16 27 16 dBm TS 36.101 Rel 8 for LTE 25 12 26.5 13 30 16 dB HPM, POUT = 27 dBm LPM, POUT = 16 dBm LTE to LTE, E-UTRA (2) - -37 -40 -36 -36 dBc HPM, POUT = 27 dBm LPM, POUT = 16 dBm UTRA ACLR1 (2) - -38 -40 -36 -36 dBc HPM, POUT = 27 dBm LPM, POUT = 16 dBm UTRA ACLR2 (2) - -60 -60 -42 -42 dBc HPM, POUT = 27 dBm LPM, POUT = 16 dBm Power-Added Efficiency (2) - 34 22 - % HPM, POUT = 27 dBm LPM, POUT = 16 dBm Quiescent Current (Icq) Low Bias Mode - 8 - mA through VCC pin - - -35 -50 dBc POUT ≤ +27 dBm RF Output Power (Pmax) (1) LTE (MPR = 0), HPM LTE (MPR = 0), LPM Gain Harmonics 2fO 3fO, 4fO Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure - - -70 dBc POUT ≤ +27 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions 8:1 - - VSWR Applies over full operating range Notes: (1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB. (2) ACLR and Efficiency measured at 1900 MHz. 7 COMMENTS Data Sheet - Rev 2.7 03/2012 AWT6631 Table 9: Electrical Specifications - TD-LTE Operation, Band 34 (10 MHz QPSK, 12 RB, Start = 0) (TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = 0 V, 50 Ω system) PARAMETER MIN TYP MAX UNITS Operating Frequency (f) 2010 - 2025 MHz Band 34 RF Output Power (Pmax) (1) LTE (MPR = 0), HPM LTE (MPR = 0), LPM 26 15.5 27 16 27 16 dBm TS 36.101 Rel 8 for LTE 25 12 27 13 30 16 dB HPM, POUT = 27 dBm LPM, POUT = 16 dBm LTE to LTE, E-UTRA (2) - -38 -38 -36 -36 dBc HPM, POUT = 27 dBm LPM, POUT = 16 dBm UTRA ACLR1 (2) - -39 -38 -36 -36 dBc HPM, POUT = 27 dBm LPM, POUT = 16 dBm UTRA ACLR2 (2) - -62 -60 -42 -42 dBc HPM, POUT = 27 dBm LPM, POUT = 16 dBm Power-Added Efficiency (2) - 35 23 - % HPM, POUT = 27 dBm LPM, POUT = 16 dBm Quiescent Current (Icq) Low Bias Mode - 8 - mA through VCC pin - - -35 -50 dBc POUT ≤ +27 dBm Gain Harmonics 2fO 3fO, 4fO Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure - - -70 dBc POUT ≤ +27 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions 8:1 - - VSWR Applies over full operating range Notes: (1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB. (2) ACLR and Efficiency measured at 2017.5 MHz. 8 COMMENTS Data Sheet - Rev 2.7 03/2012 AWT6631 Table 10: Electrical Specifications - TD-SCDMA Operation (TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNITS Operating Frequency (f) 1880 - 1920 MHz 3GPP TS 25.12 Section 5.2a,f RF Output Power (Pmax) (1) TD-SCDMA, HPM TD-SCDMA, LPM 26.2 15.2 27 16 27 16 dBm 3GPP TS 25.62 Section 6.2.1 25 12 27 13 30 16 dB HPM, POUT = 27 dBm LPM, POUT = 16 dBm ACLR1 at 1.6 MHz offset (2) - -42 -42 - dBc HPM, POUT = 27 dBm LPM, POUT = 16 dBm ACLR2 at 3.2 MHz offset (2) - -55 -55 - dBc HPM, POUT = 27 dBm LPM, POUT = 16 dBm Power-Added Efficiency (2) - 36 20 - % HPM, POUT = 27 dBm LPM, POUT = 16 dBm Quiescent Current (Icq) Low Bias Mode - 8 13 mA VMODE1 = +1.8 V Mode Control Current - 0.3 0.5 mA through VMODE pin, VMODE1 = +1.8 V Enable Current - 0.3 0.5 mA through VENABLE pin, VEN = +1.8 V BATT Current - 2.5 5 mA through VBATT pin, VMODE1 = +1.8 V Leakage Current - 4 - µA VBATT = +4.2 V, VCC = +4.2 V VENABLE = 0 V, VMODE1 = 0 V Harmonics 2fO 3fO, 4fO - - -35 -50 dBc POUT ≤ +27 dBm Input Impedance - - 2:1 VSWR 8:1 - - VSWR Gain Load mismatch stress with no permanent degradation or failure Notes: (1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB. (2) ACLR and Efficiency measured at 1900 MHz. 9 Data Sheet - Rev 2.7 03/2012 COMMENTS Applies over full operating range AWT6631 Table 11: Electrical Specifications - TD-SCDMA Operation (TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNITS Operating Frequency (f) 2010 - 2025 MHz 3GPP TS 25.102 Section 5.2a RF Output Power (Pmax) (1) TD-SCDMA, HPM TD-SCDMA, LPM 26.2 15.2 27 16 27 16 dBm 3GPP TS 25.62 Section 6.2.1 25 12 27 13 30 16 dB HPM, POUT = 27 dBm LPM, POUT = 16 dBm ACLR1 at 1.6 MHz offset (2) - -42 -42 - dBc HPM, POUT = 27 dBm LPM, POUT = 16 dBm ACLR2 at 3.2 MHz offset (2) - -55 -55 - dBc HPM, POUT = 27 dBm LPM, POUT = 16 dBm Power-Added Efficiency (2) - 36 20 - % HPM, POUT = 27 dBm LPM, POUT = 16 dBm Quiescent Current (Icq) Low Bias Mode - 8 13 mA VMODE1 = +1.8 V Mode Control Current - 0.3 0.5 mA through VMODE pin, VMODE1 = +1.8 V Enable Current - 0.3 0.5 mA through VENABLE pin, VEN = +1.8 V BATT Current - 2.5 5 mA through VBATT pin, VMODE1 = +1.8 V Leakage Current - 4 - µA VBATT = +4.2 V, VCC = +4.2 V VENABLE = 0 V, VMODE1 = 0 V Harmonics 2fO 3fO, 4fO - - -35 -50 dBc POUT ≤ +27 dBm Input Impedance - - 2:1 VSWR 8:1 - - VSWR Gain Load mismatch stress with no permanent degradation or failure Notes: (1) For operation at VCC = +3.1 V, POUT is derated by 0.8 dB. (2) ACLR and Efficiency measured at 2012.5 MHz. 10 Data Sheet - Rev 2.7 03/2012 COMMENTS Applies over full operating range AWT6631 APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VENABLE and VMODE1 voltages. Bias Modes The power amplifier may be placed in either a Low Bias mode or a High Bias mode by applying the appropriate logic level (see Operating Ranges table) to VMODE1. The Bias Control table lists the recommended modes of operation for various applications. VMODE2 is not necessary for this PA. Two operating modes are available to optimize current consumption. High Bias/High Power operating mode is for POUT levels > 16 dBm. At around 17 dBm output power, the PA should be “Mode Switched” to Low power mode for lowest quiescent current consumption. Vcontrols Venable/Vmode(s) On Sequence Start T_0N = 0µ Rise/Fall Max 1µS Defined at 10% to 90% of Min/Max Voltage Off Sequence Start T_0FF = 0µ ON Sequence OFF Sequence RFIN notes 1,2 VEN VCC note 1 T_0N+1µS T_0N+3µS Referenced After 90% of Rise Time T_0FF+2µS T_0FF+3µS Referenced Before10% of Fall Time Figure 3: Recommended ON/OFF Timing Sequence Notes: (1) Level might be changed after RF is ON. (2) RF OFF defined as PIN ≤ -30 dBm. (3) Switching simultaneously between VMODE and VEN is not recommended. 11 Data Sheet - Rev 2.7 03/2012 AWT6631 Table 12: Bias Control (CDMA, WCDMA and LTE) POUT LEVELS BIAS MODE VENABLE VMODE1 VCC VBATT High power (High Bias Mode) > +16 dBm High +1.8 V 0V 1.5 - 4.35 V > 3.1 V Med/low power (Low Bias Mode) +17 dBm Low +1.8 V +1.8 V 0.5 - 4.35 V > 3.1 V - Shutdown 0V 0V 0.5 - 4.35 V > 3.1 V APPLICATION Shutdown Table 13: Bias Control (TD-SCDMA) POUT LEVELS BIAS MODE VENABLE VMODE1 VCC VBATT TD-SCDMA - high power (High Bias Mode) > +15 dBm High +1.8 V 0V 1.5 - 4.35 V > 3.1 V TD-SCDMA - med/low power (Low Bias Mode) +16 dBm Low +1.8 V +1.8 V 0.5 - 4.35 V > 3.1V - Shutdown 0V 0V 0.5 -4..35 V > 3.1 V APPLICATION Shutdown 12 Data Sheet - Rev 2.7 03/2012 AWT6631 PERFROMANCE DATA: Figure 5: WCDMA Gain (dB) over Voltage Figure 4: WCDMA Gain (dB) Temperature Figure 4: WCDMA Gain (dB)over over Temperature (Vbatt=Vcc=3.4V) (V BATT = VCC = 3.4 V) 30 25C 3.2Vcc 25C 3.4Vcc 26 25C 3.4Vcc 90C 3.4Vcc 25 Gain (dB) 24 Gain (dB) 30 -30C 3.4Vcc 28 Figure 5: WCDMA(Tc=25C Gain )(dB) over Voltage (TC = 25 8C) 22 20 18 16 25C 4.2Vcc 25C 3.0Vcc 20 15 14 12 10 0 5 10 15 20 25 10 30 0 5 10 Pout (dBm) 6: WCDMAPAE PAE (%) (%) over FigureFigure 6: WCDMA overTemperature Temperature (Vbatt=Vcc=3.4V) (VBATT = VCC = 3.4 V) 50 25C 3.2Vcc 40 25C 3.4Vcc 35 30 30 Efficiency Efficiency (%) 90C 3.4Vcc 45 35 25 20 25C 4.2Vcc 25C 3.0Vcc 20 15 10 10 5 5 0 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 Pout (dBm) Pout (dBm) Figure 8:Figure WCDMA ACLR1 (dBc) over Temperature 8: WCDMA ACRL1 (dBc) over Temperature (Vbatt=Vcc=3.4V) (VBATT = VCC = 3.4 V) FigureFigure 9: WCDMA ACLR1 (dBc) over Voltage 5: WCDMA ACLR1 (dBc) over Voltage (Tc=25C (T C = )25 8C) -25 -30C 3.4Vcc 25C 3.4Vcc -35 -30 90C 3.4Vcc ACLR1 (5MHz dBc) ACLR1 (5MHz dBc) 30 25 15 -30 25 50 25C 3.4Vcc 40 20 Figure 7: WCDMA (%) over Voltage Figure 5: WCDMA PAE PAE (%) over Voltage ) = 25 8C) (TC(Tc=25C -30 3.4cc 45 15 Pout (dBm) -40 -45 -50 25C 3.2Vcc 25C 3.4Vcc -35 25C 4.2Vcc 25C 3.0Vcc -40 -45 -50 -55 0 5 10 15 Pout (dBm) 13 20 25 30 -55 0 5 10 15 Pout (dBm) Data Sheet - Rev 2.7 03/2012 20 25 30 AWT6631 VBATT VCC C5 2.2 µF C1 33pF C2 0.1µF GND at slug 1 2 RFIN 3 VMODE1 VEN VBATT VCC RFIN RFOUT 10 9 VMODE1 5 VEN RFOUT 8 VMODE2 (N/C) CPLIN 4 CPLIN GND 7 CPLOUT 6 CPLOUT VCC GND GND VBATT Figure 10: Evaluation Board Schematic RFOUT C3 C6 RFIN C2 C1 CPLOUT VMODE1 VEN GND GND VMODE2 C4 CPLIN Figure 11: Evaluation Board Layout 14 C3 2.2µF ceramic Data Sheet - Rev 2.7 03/2012 AWT6631 HELP3DCTM The AWT6631 power amplifier module is based on ANADIGICS proprietary HELP3DC™ technology. The PA is designed to operate up to 17 dBm in the low power mode, thus eliminating the need for three gain states, while still maintaining low quiescent current and high efficiency in low and medium power levels. Average weighted efficiency can be increased by using an external switch mode power supply (SMPS) or DC/DC converter to reduce VCC. The directional “daisy chainable” coupler is integrated within the PA module, therefore there is no need for external couplers. voltage source. The PA is turn on/off is controlled by VEN pin. A single VMODE control logic (VMODE1) is needed to operate this device. AWT6631 requires only two calibration sweeps for system calibration, thus saving calibration time. Figure 5 shows one application example on mobile board. C1 and C2 are RF bypass caps and should be placed nearby pin 1 and pin 10. Bypass caps C4 and C5 may not be needed. Also a “T” matching topology is recommended at PA RFIN and RFOUT ports to provide matching between input TX Filter and Duplexer / Isolator. The AWT6631 has an integrated voltage regulator, which eliminates the need for an external constant SMPS VBATT C6 GND RFIN TX filter C1 C2 GND at slug GND Input Matching VBATT VCC RFIN RFOUT VMODE2 CPL IN VMODE1 C5 VEN GND GND 50Ω CPLOUT GND To Detector PA_R0 PA_0N C4 GND Figure 12: Typical Application Circuit 15 Data Sheet - Rev 2.7 03/2012 GND RFOUT GND BB C3 Output Matching Duplexer AWT6631 PACKAGE OUTLINE Figure 13: Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module Pin 1 Identifier Date Code YY=Year; WW=Work week 6631 Part Number LLLLNN YYWWCC Lot Number Country Code (CC) Figure 14: Branding Specification 16 Data Sheet - Rev 2.7 03/2012 AWT6631 PCB AND STENCIL DESIGN GUIDELINE Figure 15: Recommended PCB Layout Information 17 Data Sheet - Rev 2.7 03/2012 AWT6631 COMPONENT PACKAGING Pin 1 Figure 16: Carrier Tape Figure 17: Reel 18 Data Sheet - Rev 2.7 03/2012 AWT6631 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE AWT6631Q7 -30 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 1 mm Tape and Reel, 2500 pieces per Reel Surface Mount Module AWT6631P9 -30 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 1 mm Partial Tape and Reel Surface Mount Module PACKAGE DESCRIPTION COMPONENT PACKAGING ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 19 Data Sheet - Rev 2.7 03/2012