ANADIGICS AWU6616P9

HELP3E
AWU6616
Dual-band 1 & 5, 6 CDMA/WCDMA
3.4 V Linear Power Amplifier Module
TM
Data Sheet - Rev 2.3
FEATURES
• InGaP HBT Technology
• High Efficiency (R99):
• 37 % @ POUT = +28.1 dBm (Band 1)
• 38 % @ POUT = +28.7 dBm (Band 5, 6)
• 24 % @ POUT = +16.5 dBm
• 8.5 % @ POUT = +8 dBm
AW
U
661
• Low Quiescent Current: 4 mA
TE
• Internal Voltage Regulation
• Built-in Directional Coupler
• Common VMODE Control Line
• Simplified VCC Bus PCB routing
• Reduced External Component Count
• Low Profile Surface Mount Package: 1 mm
LE
M47 Package
14 Pin 3 mm x 5 mm x 1 mm
Surface Mount Module
• RoHS Compliant Package, 260 oC MSL-3
APPLICATIONS
6
power levels where the PA typically operates, thereby
dramatically increasing handset talk-time. Its built-in
voltage regulator eliminates the need for external
switches. This PA has built-in directional couplers
for each band, with a common coupler output port
CPL_OUT. These couplers provide high directivity and
23 dB Coupling. The 3 mm x 5 mm x 1 mm surface
mount package incorporates matching networks
optimized for output power, efficiency and linearity in
a 50 Ω system.
O
• Band 1 +5, 6 Dual-band WCDMA/HSPA wireless
devices
Band Class 0+6 Dual-band CDMA/EVDO
wireless devices.
•
Band Class 0+6 Dual-band EVDO Rev. B
wireless devices.
BS
•
PRODUCT DESCRIPTION
O
AWU6616 addresses the demand for increased
integration in dual-band handsets for WCDMA and
CDMA networks. The small footprint 3 mm x 5 mm
x 1 mm surface- mount RoHS compliant package
contains independent RF PA paths to ensure optimal
performance in both frequency bands, while achieving
a 25% PCB space savings compared with solutions
requiring two single-band PAs. The package pinout
was chosen to enable handset manufacturers to easily
route bias to both power amplifiers and simplify control
with common mode pins. The device is manufactured
on an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. The AWU6616 is part of ANADIGICS’
High-Efficiency-at-Low-Power (HELP™) family of
WCDMA power amplifiers, which deliver low quiescent
currents and significantly greater efficiency without
the need of an external DC-DC converter. Through
selectable bias modes, the AWU6616 achieves
optimal efficiency, specifically at low- and mid-range
02/2012
VEN_800 1
14 GND
Bias Control
Voltage Regulation
RFIN_800 2
CPL
VMODE1 3
12 VCC
VBATT 4
11 VCCA
VMODE2 5
10 CPLOUT
RFIN_IMT 6
VEN_IMT 7
13 RFOUT_800
CPL
Bias Control
Voltage Regulation
9 GND
8 RFOUT_IMT
GND at Slug (pad)
Figure 1: Block Diagram
AWU6616
VEN_800
RFIN_800
RFOUT_800
VMODE1
VMODE2
CPLOUT
TE
RFIN_IMT
VEN_IMT
LE
RFOUT_IMT
Figure 2: Pinout
Table 1: Pin Description
PIN
NAME
1
VEN_800
Enable Voltage for CELL & JCELL Band
RFIN_800
RF Input for CELL & JCELL Band
O
2
DESCRIPTION
VMODE1
Mode Control Voltage for CELL & JCELL
& IMT Bands
4
VBATT
Battery Voltage
5
VMODE2
Mode Control Voltage for CELL & JCELL
& IMT Band
6
RFIN_IMT
RF Input for IMT Band
7
VEN_IMT
Enable Voltage for IMT Band
8
RFOUT_IMT
9
GND
10
CPLOUT
11
VCCA
12
VCC
13
RFOUT_800
14
GND
O
BS
3
2
RF Output for IMT Band
Ground
Coupler Output Port
Battery Voltage A
Supply Voltage
RF Output for CELL & JCELL Band
Ground
Data Sheet - Rev 2.3
02/2012
AWU6616
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Supply Voltage (VBATT, VCC, VCCA)
0
+5
V
Mode Control Voltage (VMODE1, VMODE2)
0
+3.5
V
Enable Voltage (VEN_CELL, VEN_PCS)
0
+3.5
V
RF Input Power (PIN)
-
+10
dBm
-40
+150
°C
Storage Temperature (TSTG)
TE
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
MIN
TYP
Operating Frequency (f)
824
1920
-
Supply Voltage (VCC and VBATT)
MAX
UNIT
COMMENTS
849
1980
MHz
UMTS Band 5, 6, CDMA BC 0
UMTS Band 1, CDMA BC 6
LE
PARAMETER
+3.2
+3.4
+4.2
V
+1.35
0
+1.8
-
+3.1
+0.5
V
PA "on"
PA "shut down"
+1.35
0
+1.8
-
+3.1
+0.5
V
Low Bias Mode
High Bias Mode
28.0(1)
27.0(1)
16.5(1)
15.5(1)
8.0(1)
7.0(1)
28.7
27.7
16.6
15.6
8.0
7.0
-
RF Output Power, Band Class 0
CDMA2000, HPM
CDMA2000, MPM
CDMA2000, LPM
27.0
-
27.8
16.0
7.5
-
RF Output Power, Band 1, UMTS
R99 WCDMA, HPM
HSPA (MPR = 0 dB), HPM
R99 WCDMA, MPM
HSPA (MPR = 0 dB), MPM
R99 WCDMA, LPM
HSPA (MPR = 0 dB), LPM
27.6(1)
26.6(1)
16.0(1)
15.0(1)
8.0(1)
7.0(1)
28.1
27.1
16.5
15.5
8.0
7.0
-
RF Output Power, Band Class 6
CDMA2000, HPM
CDMA2000, MPM
CDMA2000, LPM
27.0 (1)
-
27.5
16.0
7.5
-
dBm
-30
-
+90
°C
Enable Voltage (VEN)
O
Mode Control Voltage (VMODE1, VMODE2)
O
BS
RF Output Power, Band 5, 6 UMTS
R99 WCDMA, HPM
HSPA (MPR = 0 dB), HPM
R99 WCDMA, MPM
HSPA (MPR = 0 dB), MPM
R99 WCDMA, LPM
HSPA (MPR = 0 dB), LPM
Case Temperature (TC)
dBm
dBm
dBm
3GPP TS
34.121-1, REL8
Table C.11.1.3
SUBTEST 1
CDMA2000 RC-1
3GPP TS
34.121-1, REL8
Table C.11.1.3
SUBTEST 1
CDMA2000 RC-1
The device may be operated safely over these conditions; however, parametric performance
is guaranteed only over the conditions defined in the electrical specifications.
Notes:
(1)For operation at VCC = +3.2 V, POUT is derated by 0.5 dB.
3
Data Sheet - Rev 2.3
02/2012
AWU6616
Table 4: Electrical Specifications - WCDMA Operation (Band 5 & 6)
(TC = +25 °C, VBATT = VCC = +3.4 V, VEN_CELL = +1.8 V, 50 Ω system, R99 uplink waveform)
COMMENTS
PARAMETER
MIN
TYP
MAX
UNIT
Gain
25
14.5
9
27.5
17
12
30
20
14
dB
+28.7 dBm 0 V
+16.6 dBm 1.8 V
+8 dBm
1.8 V
0V
0V
1.8 V
-
-42
-42
-41
-37.5
-37
-37
dBc
+28.7 dBm 0 V
+16.6 dBm 1.8 V
+8 dBm
1.8 V
0V
0V
1.8 V
ACLR2 @ 10 MHz Offset (1)
-
-58
-55
-54
-48
-48
-48
dBc
+28.7 dBm 0 V
+16.6 dBm 1.8 V
+8 dBm
1.8 V
0V
0V
1.8 V
Power-Added Efficiency (1)
34
18
6
38
21
8
-
%
+28.7 dBm 0 V
+16.6 dBm 1.8 V
+8 dBm
1.8 V
0V
0V
1.8 V
Quiescent Current (Icq)
-
Mode Control Current
-
TE
7
mA
through VBATT and VCC pins,
VMODE1 = +1.8 V, VMODE2 =+1.8 V
<0.1
0.2
mA
through VMODE pins, VMODE1= +1.8 V
-
1.5
3
mA
through VBATT pin, VMODE1 = +1.8 V,
VMODE2 = +1.8 V
-
0.15
0.3
mA
through VEN_800 pin
BS
Enable Current
-
-133
-
dBm/Hz
Harmonics
2fo
3fo, 4fo
-
-40
-50
-30
-38
dBc
Input Impedance
-
-
2:1
VSWR
Coupling Factor
-
23
-
dB
O
Noise in Receive Band
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
-
-
-65
dBc
8:1
-
-
VSWR
Notes:
(1) PAE and ACP limit applies at 836.5 MHz.
4
VMODE2
4
O
Battery Current
VMODE1
LE
ACLR1 @ 5 MHz Offset (1)
POUT
Data Sheet - Rev 2.3
02/2012
869 MHz to 894 MHz
POUT < +28.7 dBm
POUT < +28.7 dBm
In-band Load VSWR < 5:1
Out-of-band Load VSWR < 10:1
Applies over all operating
conditions
Applies over full operating
conditions
AWU6616
Table 5: Electrical Specifications - CDMA2000 Operation (Band Class 0)
(TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system, RC-1 Waveform)
MIN
TYP
MAX
UNIT
Gain
24.5
13.5
7.5
26.5
16.5
11
30
19
14
Adjacent Channel Power
at  885 kHz offset
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
-
-51
-51
-51
-46.5
-46.5
-46.5
Adjacent Channel Power
at 1.98 MHz offset
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
-
-60
-60
-60
-55
-55
-55
dBc
+27.8 dBm
+16 dBm
+7.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
-
35
19
7
-
%
+27.8 dBm
+16 dBm
+7.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
Spurious Output Level
(all spurious outputs)
-
VMODE2
dB
+27.8 dBm
+16 dBm
+7.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
dBc
+27.8 dBm
+16 dBm
+7.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
8:1
-
-
dBc
VSWR
O
BS
Load mismatch stress with no
permanent degradation or failure
VMODE1
TE
-70
O
-
POUT
LE
Power-Added Efficiency
5
COMMENTS
PARAMETER
Data Sheet - Rev 2.3
02/2012
POUT  +27.8 dBm
In-band Load VSWR < 5:1
Out-of-band Load VSWR < 10:1
Applies over all operating
conditions
Applies over all operating
conditions
AWU6616
Table 6: Electrical Specifications - WCDMA Operation (Band 1)
(TC = +25 °C, VBATT = VCC = +3.4 V, VEN_PCS = +1.8 V, 50 Ω system, R99 uplink waveform)
TYP
MAX
UNIT
24
12
7
26.5
14.5
10
30
18
13
dB
+28.1 dBm
+16.5 dBm
+8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
ACLR1 @ 5 MHz Offset (1)
-
-41
-41
-43
-37
-36
-36
dBc
+28.1 dBm
+16.5 dBm
+8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
ACLR2 @ 10 MHz Offset (1)
-
-55
-56
-55
-48
-48
-48
dBc
+28.1 dBm
+16.5 dBm
+8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
Power-Added Efficiency (1)
33
20
6
37
24
8.5
-
%
+28.1 dBm
+16.5 dBm
+8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
Quiescent Current (Icq)
-
4
7
mA
Mode Control Current
-
0.1
0.2
mA
tthrough VMODE pins, VMODE1= +1.8 V
VMODE2 = +1.8 V
Battery Current
-
1.4
3
mA
through VBATT pin, VMODE1 = +1.8 V,
VMODE2 = +1.8 V
Enable Current
TE
LE
mA
through VEN_IMT pin
-
<1
5
A
VBATT = +4.2 V, VCC = +4.2 V,
VEN_IMT = 0 V, VMODE1 = 0 V, VMODE2 = 0 V
VBATT = +4.2 V, VCC = +4.2 V,
VEN_IMT = 0 V, VMODE1 = 0 V, VMODE2 = 0 V
14
22
A
Noise in Receive Band
-
-136
-134
dBm/Hz
Harmonics
2fo
3fo, 4fo
-
-42
-50
-30
-38
dBc
Input Impedance
-
-
2:1
VSWR
Coupling Factor
-
23
-
dB
O
through VBATT and VCC pins,
VMODE1 = +1.8 V, VMODE2 =+1.8 V
0.3
-
Load mismatch stress with no
permanent degradation or
failure
VMODE2
VMODE1
0.15
Total Decoder Current on
VBATT (Shutdown Mode)
Spurious Output Level
(all spurious outputs)
POUT
-
BS
HBT Leakage Current on VCC
(Shutdown Mode)
O
Gain
2110 MHz to 2170 MHz
POUT < +28.1 dBm
-
-
-65
dBc
POUT < +28.1 dBm
In-band Load VSWR < 5:1
Out-of-band Load VSWR < 10:1
Applies over all operating conditions
8:1
-
-
VSWR
Applies over full operating conditions
Notes:
(1) ACPRs and Efficiency limits at 1950 MHz.
6
COMMENTS
MIN
PARAMETER
Data Sheet - Rev 2.3
02/2012
AWU6616
Table 7: Electrical Specifications - CDMA2000 Operation (Band Class 6)
(TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system, RC-1)
PARAMETER
MIN
TYP
MAX
UNIT
Gain
23
10.5
6
25
13.5
9.5
29
17
13
Adjacent Channel Power
at +1.25 MHz offset
Primary Channel BW - 1.23 MHz
Adjacent Channel BW = 30 kHz
-
-51
-51
-51
-46.5
-46.5
-46.5
Adjacent Channel Power
at +1.98 MHz
Primary Channel BW=1.23 MHz
Adjacent Channel BW=30 kHz
-
-55
-55
-55
-49
-49
-49
dBc
-
33
18
7
-
%
Spurious Output Level
(all spurious outputs)
-
8:1
-
-
O
BS
Load mismatch stress with no
permanent degradation or failure
7
VMODE1
VMODE2
dB
+27.5 dBm
+16 dBm
+7.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
dBc
+27.5 dBm
+16 dBm
+7.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
+27.5 dBm
+16 dBm
+7.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
+27.5 dBm
+16 dBm
+7.5 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
TE
-70
O
-
POUT
LE
Power-Added Efficiency
COMMENTS
Data Sheet - Rev 2.3
02/2012
dBc
VSWR
POUT < +27.5 dBm, In-Band
VSWR < 5:1, Out-Of-Band VSWR
< 10:1. Applies to all operating
condtions.
Applies over full operating range
AWU6616
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the VENABLE and VMODE voltages.
Bias Modes, Medium Bias Mode
The power amplifier may be placed in Low Bias mode
or a High Bias mode by applying the appropriate
logic level (see Operating Ranges table) to the
VMODE1, and VMODE2 pins. The Bias Control table lists
the recommended modes of operation for various
applications.
Vcontrols
Venable/Vmode(s)
TE
On Sequence Start
T_0N = 0µ
Rise/Fall Max 1µS
Defined at 10% to 90%
of Min/Max Voltage
Off Sequence Start
T_0FF = 0µ
OFF Sequence
LE
ON Sequence
RFIN_800, IMT
O
notes 1,2
VCC/VCCA
note 1
BS
VEN_800, IMT
T_0N+1µS
T_0N+3µS
O
Referenced After 90% of Rise
Time
T_0FF+2µS T_0FF+3µS
Referenced Before10% of Fall
Time
Figure 3: Recommended ON/OFF Timing Sequence
Notes:
(1) Level might be changed after RF is ON.
(2) RF OFF defined as PIN ≤ -30 dBm.
(3) Switching simultaneously between VMODE and VEN is not recommended.
8
Data Sheet - Rev 2.3
02/2012
AWU6616
Table 8: Bias Control
APPLICATION
POUT
LEVELS
BIAS
MODE
VEN
WCDMA - low power
(Low bias Mode)
< +8 dBm
Low
+1.8 V
+1.8 V
WCDMA- med power
(Medium Bias Mode)
> 8 dBm
 +16.5 dBm
Low
+1.8 V
WCDMA - high power
(High Bias Mode)
> +16.5 dBm
High
+1.8 V
-
Shutdown
0V
VBATT
+1.8 V
3.2 - 4.2 V
> 3.2 V
+1.8 V
0V
3.2 - 4.2 V
> 3.2 V
0V
0V
3.2 - 4.2 V
> 3.2 V
TE
0V
0V
3.2 - 4.2 V
> 3.2 V
O
LE
Shutdown
VCC
VMODE1 VMODE2
VEN_800
1
14
RFIN_800
2.2 F
RFIN_IMT
VEN_IMT
68pF
VCC
1000 pF
4
11
1000 pF
5
10
CPL
6
7
RFOUT_800
12
Bias Control
Voltage Regulation
GND at Slug (pad)
Figure 4: Application Circuit
9
13
68 pF
3
VBATT
VMODE2
CPL
2
O
VMODE1
BS
Bias Control
Voltage Regulation
Data Sheet - Rev 2.3
02/2012
2.2 F
CPLOUT
9
8
33 pF
RFOUT_IMT
AWU6616
BS
O
LE
TE
PACKAGE OUTLINE
O
Figure 5: Package Outline - 14 Pin 3 mm x 5 mm x 1 mm Surface Mount Module
Figure 6: Branding Specification
10
Data Sheet - Rev 2.3
02/2012
AWU6616
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
COMPONENT PACKAGING
AWU6616Q7
-30 °C to +90 °C
RoHS Compliant 14 Pin
3 mm x 5 mm x 1 mm
Surface Mount Module
Tape and Reel, 2500 pieces per Reel
AWU6616P9
-30 °C to +90 °C
RoHS Compliant 14 Pin
3 mm x 5 mm x 1 mm
Surface Mount Module
Partial Tape and Reel
ANADIGICS
O
LE
TE
ORDER NUMBER
BS
ORDERING INFORMATION
O
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
11
Data Sheet - Rev 2.3
02/2012