Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C General Description Features The AZ4558C consists of two high performance operational amplifiers. The IC features high gain, low equivalent input noise voltage, high input resistance, excellent channel separation, wide range of operating voltage and internal frequency compensation. · · · · · It can work with ±18V maximum power supply voltage or single power supply up to 36V. Applications The AZ4558C is available in DIP-8 and SOIC-8 packages. · · SOIC-8 Internally Frequency Compensated Large Signal Voltage Gain: 100dB Typical Gain and Phase Match between Amplifiers Gain Bandwidth Product (at 10KHz): 5.5MHz Pin to Pin Compatible with MC1458 Audio AC-3 Decoder System Audio Amplifier DIP-8 Figure 1. Package Types of AZ4558C Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 1 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C Pin Configuration M Package/P Package (SOIC-8/DIP-8) OUTPUT 1 1 8 VCC INPUT 1- 2 7 OUTPUT 2 INPUT 1+ 3 6 INPUT 2- VEE 4 5 INPUT 2+ Figure 2. Pin Configuration of AZ4558C (Top View) Functional Block Diagram VCC - Input + Input Output VEE Figure 3. Functional Block Diagram of AZ4558C (Each Amplifier) Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 2 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C Ordering Information AZ4558C - Circuit Type E1: Lead Free Package M: SOIC-8 P: DIP-8 TR: Tape and Reel Package Temperature Range SOIC-8 -40 to 85oC DIP-8 -40 to 85oC Blank: Tin Lead Blank: Tube Part Number Tin Lead Marking ID Lead Free Tin Lead Lead Free Packing Type AZ4558CM AZ4558CM-E1 4558CM 4558CM-E1 Tube AZ4558CMTR AZ4558CMTR-E1 4558CM 4558CM-E1 Tape & Reel AZ4558CP AZ4558CP-E1 AZ4558CP AZ4558CP-E1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Absolute Maximum Ratings (Note 1) Parameter Symbol Value VCC +20 VEE -20 Input Voltage VI ±15 V Differential Input Voltage VID ±30 V Operating Junction Temperature TJ 150 o TSTG -65 to 150 oC Lead Temperature (Soldering 10s) TL 260 oC Power Dissipation PD Supply Voltage Storage Temperature Range Unit V C DIP 800 mW SOIC 500 mW Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Min Max Unit Supply Voltage ±2 ±18 V Operating Temperature Range -40 85 oC Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 3 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C Electrical Characteristics Operating Conditions: VCC=+15V, VEE=-15V, TA=25oC, unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit 1 5 mV Input Offset Voltage VIO Input Offset Current IIO VCM=0V 10 100 nA Input Bias Current IIB VCM=0V 70 400 nA Large Signal Voltage Gain AVD RL=2KΩ, VO=±10V 85 100 dB Supply Voltage Rejection Ratio SVR RS≤10KΩ 80 100 dB Supply Current ICC All Amplifiers, No Load Input Common Mode Voltage Range VICM Common Mode Rejection Ratio CMRR 2.5 ±12 4.5 mA V RS≤10KΩ 70 95 RL≥10KΩ ±12 ±14 RL≥2KΩ ±10 ±13 dB Output Voltage Swing VO Slew Rate SR VI=±10V, RL=2KΩ, CL=100pF, unity gain 1.8 V/µs Rise Time TR VI=±20mV, RL=2KΩ, CL=100pF, unity gain 0.3 µs Overshoot KOV VI=±20mV, RL=2KΩ, CL=100pF, unity gain 15 % V Input Resistance RI 0.5 MΩ Output Resistance RO 45 Ω Unity Gain Bandwidth B Gain=0dB 2.8 MHz 5.5 MHz 0.002 % RS=100Ω, f=1KHz 10 nV--------- ISINK V-=1V, V+= 0V, VO=2V 60 ISOURCE V+=1V, V-= 0V, VO=2V 35 Gain Bandwidth Product GBWP VI=±10mV, RL=2KΩ, CL=100pF, f=10KHz Total Harmonic Distortion Plus Noise THD+N f=1KHz, AV=6dB, RL=10KΩ, VO=1VRMS, Equivalent Input Noise Voltage Density eN Output Current Hz mA Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 4 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C Typical Performance Characteristics 120 20 Maximum Swing Voltage (V) Open Loop Gain (dB) 100 80 60 40 20 15 10 VCC=+15V, VEE=-15V, RL=2kΩ, THD+N<5% 5 0 1 10 100 1k 10k 100k 1M 1 10M 10 100 Figure 4. Open Loop Voltage Gain vs. Frequency 10k 100k 1M Figure 5. Maximum Output Voltage Swing vs. Frequency 3.2 16 12 3.0 Positive Voltage Swing 8 Supply Current (mA) Output Voltage Swing (V) 1k Frequency (Hz) Frequency (Hz) 4 0 -4 -8 2.8 2.6 2.4 2.2 Negative Voltage Swing -12 2.0 -16 100 -40.0 1k -20.0 0.0 20.0 40.0 60.0 80.0 100.0 120.0 10k O Temperature ( C) Resistance Load (Ω) Figure 6. Maximum Output Voltage Swing vs. Load Resistance Figure 7. Supply Current vs. Temperature Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 5 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C Typical Performance Characteristics (Continued) 5 120 100 Input Bias Current (nA) Input Offset Voltage (mV) 4 3 2 1 0 60 40 20 -1 -2 -40.0 80 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 0 -40.0 120.0 O -20.0 0.0 20.0 40.0 60.0 80.0 100.0 120.0 O Temperature ( C) Temperature ( C) Figure 8. Input Offset Voltage vs. Temperature Figure 9. Input Bias Current vs. Temperature Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 6 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C Typical Application R1 20K 1% C1 150pF VEE=-12V VIN C3 0.1µF C2 R2 10K 1% 22µF/ 25V R3 3.3K 1% 2 (6) - 4 AZ4558C 3 (5) C5 1000pF OUT VOUT 22uF/25V + 8 R5 10K R4 6.8K GND C4 GND 1 (7) C6 0.1µF VCC=+12V GND GND GND Figure 10. Typical Application of AZ4558C in Audio 2nd Order Low Pass Filter (fO=50.6kHz, Q=0.7015, Input impedance=10K, Gain=6dB, Group delay=4.48µs) Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 7 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C Mechanical Dimensions DIP-8 Unit: mm(inch) 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 5° 6° 3.200(0.126) 3.600(0.142) 3.710(0.146) 4.310(0.170) 4° 4° 0.510(0.020)MIN 3.000(0.118) 3.600(0.142) 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) 0.254(0.010)TYP 2.540(0.100) TYP 0.360(0.014) 0.560(0.022) 0.130(0.005)MIN 6.200(0.244) 6.600(0.260) R0.750(0.030) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 8 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4558C Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) 4.800(0.189) 5.000(0.197) 7° 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.300(0.012) R0.150(0.006) 0.100(0.004) φ 0.800(0.031) 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 1° 5° 0.330(0.013) 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.190(0.007) 0.250(0.010) Jul. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 9 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 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