Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4559 General Description Features The AZ4559 consists of two high performance operational amplifiers. The IC features high gain, low equivalent input noise voltage, excellent channel separation, wide range of operating voltage and internal frequency compensation. · · · · · · It can work with ±18V maximum power supply voltage or single power supply up to 36V. Internally Frequency Compensated Large Signal Voltage Gain: 100dB Typical Gain and Phase Match between Amplifiers Gain Bandwidth Product (at 10KHz): 6MHz Slew Rate: 3V/µs Typical Pin to Pin Compatible with MC1458 Applications The AZ4559 is available in DIP-8 and SOIC-8 packages. · · SOIC-8 Audio AC-3 Decoder System Audio Amplifier DIP-8 Figure 1. Package Types of AZ4559 Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 1 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4559 Pin Configuration M Package/P Package (SOIC-8/DIP-8) OUTPUT 1 1 8 VCC INPUT 1- 2 7 OUTPUT 2 INPUT 1+ 3 6 INPUT 2- VEE 4 5 INPUT 2+ Figure 2. Pin Configuration of AZ4559 (Top View) Functional Block Diagram VCC - Input + Input Output VEE Figure 3. Functional Block Diagram of AZ4559 (Each Amplifier) Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 2 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4559 Ordering Information AZ4559 - Circuit Type E1: Lead Free Package M: SOIC-8 P: DIP-8 TR: Tape and Reel Package Temperature Range SOIC-8 -40 to 85oC DIP-8 -40 to 85oC Blank: Tin Lead Blank: Tube Part Number Tin Lead Marking ID Lead Free Tin Lead Lead Free Packing Type AZ4559M AZ4559M-E1 4559M 4559M-E1 Tube AZ4559MTR AZ4559MTR-E1 4559M 4559M-E1 Tape & Reel AZ4559P AZ4559P-E1 AZ4559P AZ4559P-E1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit VCC +20 V VEE -20 V VI ±15 V VID ±30 V TJ 150 oC TSTG -65 to 150 Lead Temperature (Soldering 10s) TL 260 Power Dissipation PD Power Supply Voltage Input Voltage Differential Input Voltage Operating Junction Temperature Storage Temperature Range oC o C DIP 800 SOIC 500 mW Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Min Max Unit Supply Voltage ±2 ±18 V Operating Temperature Range -40 85 Aug. 2006 Rev. 1. 2 o C BCD Semiconductor Manufacturing Limited 3 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4559 Electrical Characteristics Operating Conditions: VCC=+15V, VEE= -15V, TA=25oC, unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit 0.5 3 mV Input Offset Voltage VIO Input Offset Current IIO VCM=0V 10 100 nA Input Bias Current IIB VCM=0V 70 400 nA Large Signal Voltage Gain AVD RL= 2kΩ, VO=±10V 85 100 dB Supply Voltage Rejection Ratio SVR RS≤10kΩ 80 95 dB Supply Current ICC All Amplifiers, No Load Input Common Mode Voltage Range VICM Common Mode Rejection Ratio CMRR 2.5 ±12 5.0 mA V RS≤10kΩ 70 95 RL≥10kΩ ±12 ±14 RL≥2kΩ ±10 ±13 dB Output Voltage Swing VO Slew Rate SR VI=±10V, RL=2kΩ, CL=100pF, unity gain 3.0 V/µs Rise Time TR VI=±20mV, RL=2kΩ, CL=100pF, unity gain 0.25 µs Overshoot KOV 9 % 0.7 MΩ VI=±20mV, RL=2kΩ, CL=100pF, unity gain V Input Resistance RI Output Resistance RO 45 Ω Unity Gain Bandwidth B 3.5 MHz 6.0 MHz 0.002 % RS=100Ω, f=1kHz 10 nV--------- ISINK V-=1V, V+=0V, VO=2V 65 ISOURCE V+=1V, V-= 0V, VO=2V 35 0.3 Gain Bandwidth Product GBWP VI= ±10mV, RL=2kΩ, CL=100pF, f=10kHz Total Harmonic Distortion Plus Noise THD+N f=1kHz, AV=6dB, RL=10kΩ, VO=1VRMS Equivalent Input Noise Voltage Density eN Output Current Aug. 2006 Rev. 1. 2 Hz mA BCD Semiconductor Manufacturing Limited 4 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4559 Typical Performance Characteristics 120 Maximum Output Voltage Swing (V) 20 Open Loop Gain (dB) 100 80 60 40 20 15 VCC=+15V, VEE=-15V, RL=2KΩ, THD+N<5% 10 5 0 1 10 100 1k 10k 100k 1M 1 10M 10 100 Frequency (Hz) Figure 4. Open Loop Voltage Gain vs. Frequency 10k 100k 1M Figure 5. Maximum Output Voltage Swing vs. Frequency 3.2 16 12 3.0 P o sitive V o lta g e S w in g 8 Supply Current (mA) Maximum Output Voltage Swing (V) 1k Frequency (Hz) 4 0 -4 -8 2.8 2.6 2.4 2.2 N e g a tive V o lta g e S w in g -12 2.0 -16 100 1k -40.0 10k -20.0 0.0 20.0 40.0 60.0 80.0 100.0 120.0 O R e sista n ce L o a d ( Ω ) Temperature ( C) Figure 6. Maximum Output Voltage Swing Figure 7. Supply Current vs. Temperature vs. Load Resistance Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 5 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4559 Typical Performance Characteristics (Continued) 5 120 100 Input Bias Current (nA) Input Offset Voltage (mV) 4 3 2 1 0 80 60 40 20 -1 -2 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 0 -40.0 120.0 O -20.0 0.0 20.0 40.0 60.0 80.0 100.0 120.0 O Temperature ( C) Temperature ( C) Figure 8. Input Offset Voltage vs. Temperature Figure 9. Input Bias Current vs. Temperature Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 6 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4559 Typical Application R1 20K 1% C1 150pF VEE=-12V VIN C3 0.1µF C2 R2 10K 1% 22µF/ 25V R3 3.3K 1% 2 (6) - 4 AZ4559 3 (5) C5 1000pF GND OUT VOUT 22uF/25V + 8 R5 10K R4 6.8K GND C4 1 (7) C6 0.1µF VCC=+12V GND GND GND Figure 10. Typical Application of AZ4559 in Audio 2nd Order Low Pass Filter (FO=50.58KHz, Q=0.7015, Input impedance=10K, Gain=6dB, Group Delay=4.48ms) Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 7 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4559 Mechanical Dimensions DIP-8 Unit: mm(inch) 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 5° 6° 3.200(0.126) 3.600(0.142) 3.710(0.146) 4.310(0.170) 4° 4° 0.510(0.020)MIN 3.000(0.118) 3.600(0.142) 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) 0.254(0.010)TYP 2.540(0.100) TYP 0.360(0.014) 0.560(0.022) 0.130(0.005)MIN 6.200(0.244) 6.600(0.260) R0.750(0.030) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 8 Data Sheet DUAL BIPOLAR OPERATIONAL AMPLIFIERS AZ4559 Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) 4.800(0.189) 5.000(0.197) 7° 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.300(0.012) R0.150(0.006) 0.100(0.004) φ 0.800(0.031) 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 1° 5° 0.330(0.013) 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.190(0.007) 0.250(0.010) Aug. 2006 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 9 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386