1011LD200 200 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QX-1 (Common Source) The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 200 Wpk of RF power from 1030 to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25°C (Pd) Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 700 W 75V ± 20V -65 to +150°C +200°C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS TEST CONDITIONS BVdss Idss Igss Vgs(th) Vds(on) Drain-Source Breakdown Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On Voltage Vgs = 0V, Id =20mA Vds = 38V, Vgs= 0V Vgs = 10V, Vds = 0V Vds = 10V, Id = 40 mA Vgs = 10V, Id = 2A gFS Forward Transconductance Vds = 10V, Id = 2A θJC1 Thermal Resistance MIN TYP MAX UNITS 10 1 6 0.3 V µA µA V V 0.25 ºC/W 0.5 dB dB % 75 3 2 S FUNCTIONAL CHARACTERISTICS @ 25°C, Vds = 32V, Idq = 500mA Common Source Power Gain Pulse Droop Drain Efficiency Load Mismatch GPS Pd ηd ψ NOTES: Pulse width = 32 µs, LTDC=2% F=1030/1090 MHz, Pout = 200W F = 1030 MHz, Pout =200W F = 1090 MHz, Pout = 200W 13 15 43 3:1 1. At rated output power and pulse conditions Rev. B - Apr 2004 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1011LD200 Load Power vs. Drive Power 1090 MHz (typical) 300 300 250 250 200 200 PL (W) PL (W) Load Power vs. Drive Power 1030 MHz (typical) 150 150 100 100 50 50 0 0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 2.0 4.0 PD (W) 6.0 8.0 10.0 12.0 PD (W) Drain Efficiency vs. Load Power 1090 MHz (typical) Return Loss vs. Load Power 1090 MHz (typical) 0.0 60.0 -2.0 50.0 -4.0 RL (dB) n (%) 40.0 30.0 20.0 -6.0 -8.0 -10.0 -12.0 10.0 -14.0 0.0 -16.0 0 50 100 150 PL (W) 200 250 0 50 100 150 200 250 PL (W) Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1011LD200 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1011LD200 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.