BAY80 www.vishay.com Vishay Semiconductors Small Signal Switching Diode, High Voltage FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS • General purpose MECHANICAL DATA Case: DO-35 Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS BAY80 BAY80-TR or BAY80-TAP BAY80 Single diode Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp = 1 μs Repetitive peak forward current Forward continuous current Average forward current SYMBOL VALUE UNIT VRRM 150 V VR 120 V IFSM 1 A IFRM 625 mA IF 250 mA IF(AV) 200 mA THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Junction to ambient air Storage temperature range Rev. 1.9, 16-Jul-12 TEST CONDITION SYMBOL VALUE UNIT l = 4 mm, TL = constant RthJA 350 K/W Tj 175 °C Tstg - 65 to + 175 °C Document Number: 85553 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAY80 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage TEST CONDITION SYMBOL MIN. MAX. UNIT IF = 0.1 mA VF 400 TYP. 520 mV IF = 10 mA VF 630 780 mV IF = 50 mA VF 730 920 mV IF = 100 mA VF 780 1000 mV IF = 150 mA VF 1070 mV VR = 120 V IR 100 nA VR = 120 V, Tj = 150 °C IR 100 μA Breakdown voltage IR = 100 μA, tp/T = 0.01, tp = 0.3 ms V(BR) Diode capacitance VR = 0 V, f = 1 MHz CD 1.5 IF = 10 mA rf 5 IF = IR = 30 mA, iR = 3 mA, RL = 100 trr Reverse current Differential forward resistance Reverse recovery time 150 V 5 pF 50 ns TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) rf - Differential Forward Resistance (Ω) I R - Reverse Current (µA) 1000 100 Scattering Limit 10 1 VR = VRRM 0.1 0.01 0 40 80 120 160 200 Tj - Junction Temperature (°C) 94 9084 1000 100 Tj = 25 °C 10 1 0.1 94 9089 Fig. 1 - Reverse Current vs. Junction Temperature 1 10 100 I F - Forward Current (mA) Fig. 3 - Differential Forward Resistance vs. Forward Current I F - Forward Current (mA) 1000 Tj = 25 °C 100 Scattering Limit 10 1 0.1 0 94 9085 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.9, 16-Jul-12 Document Number: 85553 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAY80 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): DO-35 3.9 max. [0.154] 3.1 min. [0.120] 26 min. [1.024] 1.3 [0.050] 26 min. [1.024] 1.7 [0.067] Ø 0.4 min. [0.015] Ø 0.6 max. [0.024] Cathode Identification Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.9, 16-Jul-12 Document Number: 85553 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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