Preliminary Datasheet BB502C R07DS0283EJ0700 (Previous: REJ03G0832-0600) Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-343mod) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 Notes: 1. Source 2. Gate1 3. Gate2 4. Drain 1. Marking is “BS–”. 2. BB502C is individual type number of RENESAS BBFET. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S Ratings 6 Unit V +6 −0 V Gate2 to source voltage VG2S V Drain current Channel power dissipation Channel temperature Storage temperature ID Pch Tch Tstg +6 −0 20 100 150 –55 to +150 R07DS0283EJ0700 Rev.7.00 Mar 28, 2011 mA mW °C °C Page 1 of 10 BB502C Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) Min 6 +6 +6 — — 0.5 Typ — — — — — 0.7 Max — — — +100 +100 1.0 Unit V V V nA nA V VG2S(off) 0.5 0.7 1.0 V Drain current ID(op) 8 11 14 mA VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 180 kΩ Forward transfer admittance |yfs| 20 25 30 mS Input capacitance Output capacitance Reverse transfer capacitance Power gain Ciss Coss Crss PG 1.4 0.7 — 17 1.7 1.1 0.02 22 2.0 1.5 0.05 — pF pF pF dB VDS = 5 V, VG1 = 5 V, VG2S =4 V RG = 180 kΩ, f = 1 kHz VDS = 5 V, VG1 = 5 V VG2S =4 V, RG = 180 kΩ f = 1 MHz NF — 1.6 2.2 dB Gate2 to source cutoff voltage Noise figure R07DS0283EJ0700 Rev.7.00 Mar 28, 2011 Test conditions ID = 200 μA, VG1S = VG2S = 0 IG1 = +10 μA, VG2S = VDS = 0 IG2 = +10 μA, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V ID = 100 μA VDS = 5 V, VG1S = 5 V ID = 100 μA VDS = 5 V, VG1 = 5 V VG2S =4 V, RG = 180 kΩ f = 900 MHz Page 2 of 10 BB502C Preliminary Main Characteristics Test Circuit for Operating Items (ID(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 VG1 RG Gate 2 Gate 1 Drain Source A ID Application Circuit VDS = 5 V VAGC = 4 to 0.3 V BBFET RFC Output Input RG VGG = 5 V R07DS0283EJ0700 Rev.7.00 Mar 28, 2011 Page 3 of 10 BB502C Preliminary 900MHz Power Gain, Noise Figure Test Circuit VD VG1 VG2 C6 C4 C5 R1 R2 C3 R3 RFC Output (50Ω) D G2 L3 Input (50Ω) L4 G1 S L1 L2 C1 C1, C2 : C3 : C4 to C6 : R1 : R2 : R3 : C2 Variable Capacitor (10pF MAX) Disk Capacitor (1000pF) Air Capacitor (1000pF) 180 kΩ 47 kΩ 4.7 kΩ L2: L1: 10 3 3 8 10 26 (φ1mm Copper wire) Unit: mm 21 L4: L3: 18 10 10 7 7 29 RFC: φ1mm Copper wire with enamel 4turns inside dia 6mm R07DS0283EJ0700 Rev.7.00 Mar 28, 2011 Page 4 of 10 BB502C Preliminary Typical Output Characteristics 20 150 100 50 0 50 100 150 1 2 3 kΩ 4 5 20 Drain Current ID (mA) VDS = 5 V RG = 120 kΩ 3V 8 4 VG2S = 1 V 1 2 3 4 16 VDS = 5 V RG = 180 kΩ 12 4V 3V 8 2V 4 VG2S = 1 V 0 5 1 2 3 4 5 Gate1 Voltage VG1 (V) Gate1 Voltage VG1 (V) Drain Current vs. Gate1 Voltage Forward Transfer Admittance vs. Gate1 Voltage VDS = 5 V RG = 270 kΩ 12 8 3V 4V 2V 4 VG2S = 1 V 1 2 3 4 Gate1 Voltage VG1 (V) R07DS0283EJ0700 Rev.7.00 Mar 28, 2011 5 Forward Transfer Admittance |yfs| (mS) Drain Current ID (mA) 330 Drain Current vs. Gate1 Voltage 20 Drain Current ID (mA) 4 Drain Current vs. Gate1 Voltage 2V 0 8 Drain to Source Voltage VDS (V) 4V 16 kΩ 0 18 k Ω 0 22 Ω 0k 7 2 Ambient Temperature Ta (°C) 12 0 12 0 200 20 16 16 VG2S = 4 V VG1 = VDS R G = 15 12 0 0 kΩ kΩ 200 Drain Current ID (mA) Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 30 VDS = 5 V RG = 120 kΩ 24 f = 1 kHz 4V 3V 18 2V 12 6 VG2S = 1 V 0 1 2 3 4 5 Gate1 Voltage VG1 (V) Page 5 of 10 BB502C Preliminary Forward Transfer Admittance vs. Gate1 Voltage 30 24 VDS = 5 V RG = 180 kΩ f = 1 kHz 4V 3V 18 2V 12 6 VG2S = 1 V 0 1 2 3 4 5 Forward Transfer Admittance |yfs| (mS) Forward Transfer Admittance |yfs| (mS) Forward Transfer Admittance vs. Gate1 Voltage 30 VDS = 5 V RG = 270 kΩ f = 1 kHz 24 18 12 6 VG2S = 1 V 0 Gate1 Voltage VG1 (V) 2 3 4 5 Noise Figure vs. Gate Resistance 30 4 25 Noise Figure NF (dB) Power Gain PG (dB) 1 Gate1 Voltage VG1 (V) Power Gain vs. Gate Resistance 20 15 10 4V 3V VDS = VG1 = 5 V VG2S = 4 V f = 900 MHz VDS = VG1 = 5 V VG2S = 4 V f = 900 MHz 3 2 1 5 0 100 500 200 0 100 1000 Gate Resistance RG (kΩ) 4 Noise Figure NF (dB) Power Gain PG (dB) 25 20 15 0 0 1000 Noise Figure vs. Drain Current 30 5 500 Gate Resistance RG (kΩ) Power Gain vs. Drain Current 10 200 VDS = VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz 5 10 15 Drain Current ID (mA) R07DS0283EJ0700 Rev.7.00 Mar 28, 2011 20 VDS = VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz 3 2 1 0 0 5 10 15 20 Drain Current ID (mA) Page 6 of 10 BB502C Preliminary Power Gain vs. Gate2 to Source Voltage Drain Current vs. Gate Resistance 25 VDS = VG1 = 5 V VG2S = 4 V 15 Power Gain PG (dB) Drain Current ID (mA) 20 10 5 0 100 500 200 15 10 VDS = 5 V RG = 180 kΩ f = 900 MHz 5 0 1 1000 2 4 3 Gate Resistance RG (kΩ) Gate2 to Source Voltage VG2S (V) Noise Figure vs. Gate2 to Source Voltage Input Capacitance vs. Gate2 to Source Voltage 5 4 VDS = 5 V RG = 180 kΩ f = 900 MHz 4 Input Capacitance Ciss (pF) Noise Figure NF (dB) 20 3 2 1 1 2 4 3 Gate2 to Source Voltage VG2S (V) 3 2 VDS = 5 V RG = 180 kΩ f = 1 MHz 1 0 0 1 2 3 4 Gate2 to Source Voltage VG2S (V) Gain Reduction vs. Gate2 to Source Voltage Gain Reduction GR (dB) 0 10 20 30 VDS = VG1 = 5 V VG2S = 4 V RG = 180 kΩ 40 50 4 3 2 1 0 Gate2 to Source Voltage VG2S (V) R07DS0283EJ0700 Rev.7.00 Mar 28, 2011 Page 7 of 10 BB502C Preliminary S11 Parameter vs. Frequency .8 1 S21 Parameter vs. Frequency 90° 1.5 .6 2 Scale: 1 / div. 60° 120° .4 3 4 5 .2 30° 150° 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –.4 –30° –150° –3 –2 –.6 –.8 –1 –60° –120° –1.5 –90° Test Condition; VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 180 kΩ , Zo = 50Ω 50 to 1000 MHz (50 MHz step) Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 180 kΩ , Zo = 50Ω 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90° Scale: 0.002 / div. .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 180 kΩ , Zo = 50Ω 50 to 1000 MHz (50 MHz step) R07DS0283EJ0700 Rev.7.00 Mar 28, 2011 –2 –.6 –.8 –1 –1.5 Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 180 kΩ , Zo = 50Ω 50 to 1000 MHz (50 MHz step) Page 8 of 10 BB502C Preliminary S Parameter (VDS = VG1 = 5V, VG2S = 4V, RG = 180kΩ, Zo = 50Ω) S11 f(MHz) S21 S12 S22 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 MAG. 0.994 0.994 0.991 0.985 0.985 0.975 0.969 0.962 0.954 0.945 0.935 0.925 0.918 0.909 0.898 0.887 ANG. –2.8 –5.7 –9.2 –12.5 –15.5 –18.7 –22.0 –24.9 –27.7 –30.8 –33.8 –36.6 –39.5 –42.5 –45.0 –47.8 MAG. 2.52 2.51 2.50 2.47 2.46 2.43 2.40 2.38 2.35 2.31 2.28 2.25 2.21 2.18 2.14 2.09 ANG. 176.2 172.4 168.1 164.1 160.0 156.4 152.3 148.6 144.6 141.0 136.7 133.4 130.3 126.1 122.9 119.5 MAG. 0.00072 0.00161 0.00230 0.00297 0.00374 0.00436 0.00507 0.00557 0.00625 0.00663 0.00721 0.00747 0.00761 0.00807 0.00828 0.00801 ANG. 88.6 80.9 86.6 78.0 78.9 80.6 70.9 77.3 72.4 70.0 70.5 68.4 65.6 65.6 67.6 65.1 MAG. 0.995 0.998 0.997 0.996 0.994 0.992 0.990 0.989 0.987 0.984 0.981 0.978 0.975 0.972 0.969 0.965 ANG. –2.2 –4.0 –6.2 –8.2 –10.2 –12.2 –14.2 –16.3 –18.5 –20.4 –22.4 –24.3 –26.4 –28.3 –30.2 –32.2 850 900 950 1000 0.874 0.862 0.855 0.845 –50.6 –53.0 –55.5 –58.1 2.07 2.03 1.99 1.95 116.0 112.7 109.4 108.1 0.00815 0.00832 0.00738 0.00802 63.6 65.1 61.8 65.8 0.961 0.958 0.954 0.951 –34.2 –36.1 –37.9 –39.8 R07DS0283EJ0700 Rev.7.00 Mar 28, 2011 Page 9 of 10 BB502C Preliminary Package Dimensions Package Name CMPAK-4 JEITA Package Code SC-82AB RENESAS Code PTSP0004ZA-A D e2 Previous Code CMPAK-4(T) / CMPAK-4(T)V MASS[Typ.] 0.006g A e Q b1 c B B E HE LP L A A x M L1 Reference Symbol A3 b S A e2 A2 A l1 A1 y S b5 S b e e1 b1 l1 c c A-A Section b4 B-B Section Pattern of terminal position areas A A1 A2 A3 b b1 c D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.35 0.1 1.8 1.15 1.8 0.3 0.1 0.2 Nom 0.9 0.25 0.3 0.4 0.16 2.0 1.25 0.65 0.6 2.1 Max 1.1 0.1 1.0 0.4 0.5 0.26 2.2 1.35 2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 1.5 0.9 0.2 Ordering Information Orderable Part Number BB502CBS-TL-E BB502CBS-TL-H Note: Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. R07DS0283EJ0700 Rev.7.00 Mar 28, 2011 Page 10 of 10 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2011 Renesas Electronics Corporation. All rights reserved. Colophon 1.1