BC817-16W/25W/40W 200mW, NPN Small Signal Transistor Small Signal Diode SOT-323 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 D Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Unit (mm) Dimensions Mechanical Data Unit (inch) Min Max Min Max Case : SOT-323 small outline plastic package A 1.90 2.10 0.075 0.083 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 1.15 1.35 0.045 0.053 C 0.25 0.35 0.010 0.014 High temperature soldering guaranteed: 260°C/10s D 1.20 1.40 0.047 0.055 Weight : 0.005gram (approximately) E 2.00 2.20 0.079 0.087 F 0.80 1.00 0.031 0.039 Ordering Information Package Part No. Suggested PAD Layout Packing Marking SOT-323 BC817-16W RF 3K / 7" Reel 6CR SOT-323 BC817-25W RF 3K / 7" Reel 6CS SOT-323 BC817-40W RF 3K / 7" Reel 6CT SOT-323 BC817-16W RFG 3K / 7" Reel 6CR SOT-323 BC817-25W RFG 3K / 7" Reel 6CS SOT-323 BC817-40W RFG 3K / 7" Reel 6CT 0.65 0.026 1.6 0.063 0.8 0.031 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units 200 mW Collector-Base Voltage PD VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V IC 0.5 A RөJA 625 k/w TJ, TSTG -65 to + 150 °C Power Dissipation Collector Current Thermal Resistance,Junction to Ambient Junction and Storage Temperature Range 1)Transistor mounted on an FR4 printed-circuit board. Version : A11 BC817-16W/25W/40W 200mW, NPN Small Signal Transistor Small Signal Diode Electrical Characteristics Type Number Max Units at-Ic=10uA Symbol V(BR)CBO Min Collector-Base Breakdown Voltage 50 - V Collector-Emitter Breakdown Voltage at-Ic=10mA V(BR)CEO 45 - V Emitter-Base Breakdown Voltage at-Ic=10uA V(BR)EBO 5 - V Collector Cut-off Current at=VCB= 20V at=VCB= 20V,TJ=150℃ ICBO - 100 5 nA uA at=VEB= 5V IEBO - 100 nA hFE 100 160 250 250 400 600 - Emitter Cut-off Current at-VCE=1V,-Ic=100mA -16W -25W -40W DC Current Gain Collector-Emitter saturation voltage Transition frequency at-VCE=1V,-Ic=500mA atIc=500mA IC= 10mA VCE= 5V 40 IB= 50mA f= 100MHz VCE(sat) - 0.7 V fT 100 - MHz Tape & Reel specification Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) P0 d P1 T Dimension(mm) 3.15 ±0.10 2.77 ±0.10 1.22 ±0.10 1.50 ± 0.10 178 ± 1 55 Min 13.0 ± 0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.229 ±0.013 8.10 ±0.20 12.30 ±0.20 E A C Symbol A B C d D D1 D2 E F P0 P1 T W W1 F W B W1 D D2 D1 Direction of Feed Version : A11 BC817-16W/25W/40W 200mW, NPN Small Signal Transistor Small Signal Diode Rating and Characteristic Curves Version : A11 BC817-16W/25W/40W 200mW, NPN Small Signal Transistor Small Signal Diode Rating and Characteristic Curves Version : A11