BC846...-BC850... NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856...-BC860...(PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 1Pb-containing package may be available upon special request 1 2007-04-20 BC846...-BC850... Type Marking Pin Configuration BC846A 1As 1=B 2=E 3=C - - - SOT23 BC846B 1Bs 1=B 2=E 3=C - - - SOT23 BC846BW 1Bs 1=B 2=E 3=C - - - SOT323 BC847A 1Es 1=B 2=E 3=C - - - SOT23 BC847B 1Fs 1=B 2=E 3=C - - - SOT23 BC847BF 1Fs 1=B 2=E 3=C - - - TSFP-3 BC847BL3 1F 1=B 2=E 3=C - - - TSLP-3-1 BC847BT 1F 1=B 2=E 3=C - - - SC75 BC847BW 1Fs 1=B 2=E 3=C - - - SOT323 BC847C 1Gs 1=B 2=E 3=C - - - SOT23 BC847CW 1Gs 1=B 2=E 3=C - - - SOT323 BC848A 1Js 1=B 2=E 3=C - - - SOT23 BC848AW 1Js 1=B 2=E 3=C - - - SOT323 BC848B 1Ks 1=B 2=E 3=C - - - SOT23 BC848BF 1Ks 1=B 2=E 3=C - - - TSFP-3 BC848BL3 1K 1=B 2=E 3=C - - - TSLP-3-1 BC848BW 1Ks 1=B 2=E 3=C - - - SOT323 BC848C 1Ls 1=B 2=E 3=C - - - SOT23 BC848CW 1Ls 1=B 2=E 3=C - - - SOT323 BC849B 2Bs 1=B 2=E 3=C - - - SOT23 BC849BF 2Bs 1=B 2=E 3=C - - - TSFP-3 BC849C 2Cs 1=B 2=E 3=C - - - SOT23 BC849CW 2Cs 1=B 2=E 3=C - - - SOT323 BC850B 2Fs 1=B 2=E 3=C - - - SOT23 BF850BF 2Fs 1=B 2=E 3=C - - - TSFP-3 BC850BW 2Fs 1=B 2=E 3=C - - - SOT323 BC850C 2Gs 1=B 2=E 3=C - - - SOT23 BC850CW 2Gs 1=B 2=E 3=C - - - SOT323 2 Package 2007-04-20 BC846...-BC850... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BC846... 65 BC847..., BC850... 45 BC848..., BC849... 30 Collector-emitter voltage Unit VCES BC846... 80 BC847..., BC850... 50 BC848..., BC849... 30 Collector-base voltage VCBO BC846... 80 BC847..., BC850... 50 BC848..., BC849... 30 Emitter-base voltage VEBO BC846... 6 BC847..., BC850... 6 BC848..., BC849... 6 Collector current IC 100 Peak collector current ICM 200 Total power dissipation- Ptot mW TS ≤ 71 °C, BC846-BC850 330 TS ≤ 128 °C, BC847F-BC850F 250 TS ≤ 135 °C, BC847L3-BC848L3 250 TS ≤ 109 °C, BC847T 250 TS ≤ 124 °C, BC846W-BC850W 250 Junction temperature Tj Storage temperature Tstg 3 mA 150 °C -65 ... 150 2007-04-20 BC846...-BC850... Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value BC846-BC850 ≤ 240 BC847F-BC850F ≤ 90 BC847L3-BC848L3 ≤ 60 BC847T ≤ 165 BC846W-BC850W ≤ 105 1For Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 4 2007-04-20 BC846...-BC850... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BC846... 65 - - IC = 10 mA, IB = 0 , BC847..., BC850... 45 - - IC = 10 mA, IB = 0 , BC848..., BC849... 30 - - IC = 10 µA, IE = 0 , BC846... 80 - - IC = 10 µA, IE = 0 , BC847..., BC850... 50 - - IC = 10 µA, IE = 0 , BC848..., BC849... 30 - - - 6 - Collector-base breakdown voltage V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 0 , IC = 10 µA Collector-base cutoff current µA I CBO VCB = 45 V, IE = 0 - 0.015 - VCB = 30 V, IE = 0 , TA = 150 °C - 5 - DC current gain1) - h FE IC = 10 µA, VCE = 5 V, hFE-grp.A - 140 - IC = 10 µA, VCE = 5 V, hFE-grp.B - 250 - IC = 10 µA, VCE = 5 V, hFE-grp.C - 480 - IC = 2 mA, VCE = 5 V, hFE-grp.A 110 180 220 IC = 2 mA, VCE = 5 V, hFE-grp.B 200 290 450 IC = 2 mA, VCE = 5 V, hFE-grp.C 420 520 800 Collector-emitter saturation voltage1) mV VCEsat IC = 10 mA, IB = 0.5 mA - 90 250 IC = 100 mA, IB = 5 mA - 200 600 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 900 - IC = 2 mA, VCE = 5 V 580 660 700 IC = 10 mA, VCE = 5 V - - 770 Base emitter saturation voltage 1) VBEsat Base-emitter voltage1) VBE(ON) 1Pulse test: t < 300µs; D < 2% 5 2007-04-20 BC846...-BC850... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency fT - 250 - MHz IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb - 0.95 - pF Ceb - 9 - VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance h11e kΩ IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A - 2.7 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B - 4.5 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C - 8.7 - Open-circuit reverse voltage transf. ratio 10-4 h12e IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A - 1.5 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B - 2 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C - 3 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A - 200 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B - 330 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C - 600 - Short-circuit forward current transf. ratio h21e Open-circuit output admittance µS h22e IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.A - 18 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.B - 30 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.C - 60 - F - 1.2 4 Vn - - Noise figure dB IC = 200 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 2 kΩ, BC849..., BC850... Equivalent noise voltage 0.135 µV IC = 200 µA, VCE = 5 V, RS = 2 kΩ, f = 10 ... 50 Hz , BC850... 6 2007-04-20 BC846...-BC850... DC current gain hFE = ƒ(IC) Collector-emitter saturation voltage VCE = 5 V IC = ƒ(VCEsat), hFE = 20 EHP00365 10 3 h FE 5 ΙC 100 C EHP00367 10 2 mA 100 C 25 C -50 C 25 C -50 C 10 2 10 1 5 5 10 1 10 5 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 0 10 -1 mA 10 2 0 0.1 0.2 0.4 0.3 ΙC V 0.5 VCEsat Base-emitter saturation voltage Collector cutoff current ICBO = ƒ(TA) IC = ƒ(V BEsat), hFE = 20 VCB = 30 V EHP00364 10 2 Ι CB0 Ι C mA 100 C 25 C -50 C 10 1 EHP00415 10 4 nA max 10 3 5 5 typ 10 2 5 10 0 10 5 1 5 10 -1 10 0 0 0.2 0.4 0.6 0.8 V 1.2 0 50 100 ˚C 150 TA V BEsat 7 2007-04-20 BC846...-BC850... Transition frequency fT = ƒ(IC) VCE = 5 V Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) EHP00363 10 3 13 pF MHz 11 5 CCB/C EB fT 10 9 8 7 10 2 6 CEB 5 5 4 3 2 1 10 1 10 -1 5 10 0 5 10 1 mA CCB 0 0 10 2 4 8 12 ΙC Total power dissipation Ptot = ƒ(TS) BC846-BC850 22 Total power dissipation Ptot = ƒ(TS) BC847BF-BC850BF 360 300 mW 300 250 270 225 240 200 Ptot Ptot V VCB/VEB mW 210 175 180 150 150 125 120 100 90 75 60 50 30 25 0 0 16 15 30 45 60 75 90 105 120 0 0 °C 150 TS 15 30 45 60 75 90 105 120 °C 150 TS 8 2007-04-20 BC846...-BC850... Total power dissipation Ptot = ƒ(TS) BC847BL3/BC848BL3 Total power dissipation Ptot = ƒ(TS) BC847BT 300 300 mW 250 250 225 225 200 200 P tot P tot mW 175 175 150 150 125 125 100 100 75 75 50 50 25 25 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 15 30 45 60 75 90 105 120 °C TS 150 TS Total power dissipation Ptot = ƒ(TS) BC846W-BC850W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC846/W-BC850/W EHP00362 10 3 300 mW Ptot max Ptot DC 250 tp D= T tp T Ptot 225 10 2 200 175 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 150 125 100 10 1 75 5 50 25 0 0 15 30 45 60 75 90 105 120 °C 10 0 10 -6 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 9 2007-04-20 BC846...-BC850... Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BC847BF-BC850BF Ptotmax/P totDC = ƒ(tp) BC847BF-BC850BF 10 2 10 3 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 10 -1 -6 10 P totmax/P totDC RthJS K/W 10 -5 10 -4 10 -3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 s tp 10 0 tp Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BC847BL3, BC848BL3 Ptotmax/P totDC = ƒ(tp) 10 10 1 10 3 Ptotmax/ PtotDC RthJS BC847BL3, BC848BL3 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 2 10 1 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 10 2007-04-20 BC846...-BC850... Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BC847BT Ptotmax/P totDC = ƒ(tp) BC847BT 10 3 10 3 P totmax / P totDC K/W RthJS 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 1 10 -2 s 10 10 0 -6 10 0 -5 10 10 -4 10 -3 10 -2 s tp Noise figure F = ƒ(f) IC = 0.2mA, RS = 2kΩ , f = 1kHz IC = 0.2 mA, VCE = 5V, RS = 2 kΩ F BC 846...850 EHP00370 20 BC 846...850 EHP00371 dB dB F 15 15 10 10 5 5 0 10 -1 0 tp Noise figure F = ƒ(VCE) 20 10 5 10 0 10 1 V 0 10 -2 10 2 VCE 10 -1 10 0 10 1 kHz 10 2 f 11 2007-04-20 BC846...-BC850... Noise figure F = ƒ(IC ) Noise figure F = ƒ(I C) VCE = 5V, f = 1kHz VCE = 5V, f = 120Hz 20 BC 846...850 EHP00372 20 BC 846...850 EHP00373 dB dB F F 15 15 RS = 1 MΩ 100 k Ω 10 k Ω RS = 1 MΩ 100 k Ω 10 k Ω 10 10 500 Ω 1 kΩ 5 5 500 Ω 1 kΩ 0 10 -3 10 -2 10 -1 10 0 0 10 -3 mA 10 1 10 -2 10 -1 10 0 mA 10 1 ΙC ΙC Noise figure F = ƒ(IC ) VCE = 5V, f = 10kHz 20 BC 846...850 EHP00374 dB F 15 R S = 1 MΩ 100 kΩ 10 10 k Ω 500 Ω 5 1 kΩ 0 10 -3 10 -2 10 -1 10 0 mA 10 1 ΙC 12 2007-04-20 Package SC75 BC846...-BC850... Package Outline 1.6 ±0.2 0.2 +0.1 -0.05 A 0.1 MAX. 0.7 ±0.1 0.2 +0.1 -0.05 2 10˚ MAX. 0.8 ±0.1 1 10˚ MAX. 1.6 ±0.2 3 0.15 ±0.05 0.5 0.10 0.5 0.2 M M A Foot Print 0.65 1.15 0.65 0.4 0.4 0.5 0.5 Marking Layout (Example) 2005, December Date code BCR108T Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 MAX. 1.8 8 1.4 0.45 Pin 1 1.75 0.9 13 2007-04-20 BC846...-BC850... Date Code marking for discrete packages with one digit (SCD80, SC79, SC75 1) ) CES-Code Month 2 0 03 2 0 04 2005 2006 2 0 07 2008 2009 2010 2011 2012 2 0 13 2014 01 a p A P a p A P a p A P 02 b q B Q b q B Q b q B Q 03 c r C R c r C R c r C R 04 d s D S d s D S d s D S 05 e t E T e t E T e t E T 06 f u F U f u F U f u F U 07 g v G V g v G V g v G V 08 h x H X h x H X h x H X 09 j y J Y j y J Y j y J Y 10 k z K Z k z K Z k z K Z 11 l 2 L 4 l 2 L 4 l 2 L 4 12 n 3 N 5 n 3 N 5 n 3 N 5 1) New Marking Layout for SC75, implemented at October 2005. . 14 2007-04-20 Package SOT23 BC846...-BC850... 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 15 2007-04-20 Package SOT323 BC846...-BC850... Package Outline 0.9 ±0.1 2 ±0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 ±0.1 0.1 MIN. 2.1 ±0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 16 2007-04-20 Package TSFP-3 BC846...-BC850... Package Outline 0.2 ±0.05 0.55 ±0.04 1 1.2 ±0.05 0.2 ±0.05 3 2 0.2 ±0.05 10˚ MAX. 0.8 ±0.05 1.2 ±0.05 0.15 ±0.05 0.4 ±0.05 0.4 ±0.05 Foot Print 1.05 0.45 0.4 0.4 0.4 Marking Layout (Example) Manufacturer BCR847BF Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 1.2 1.5 8 0.3 Pin 1 0.7 1.35 17 2007-04-20 Package TSLP-3-1 BC846...-BC850... Package Outline Bottom view 0.4 +0.1 0.6 ±0.05 0.5 ±0.035 2 1 ±0.05 3 0.65 ±0.05 3 1) 2 1 1) 0.05 MAX. 0.35 ±0.05 Pin 1 marking 2 x 0.15 ±0.035 2 x 0.25 ±0.035 1 0.25 ±0.035 1) Top view 1) 1) Dimension applies to plated terminal Foot Print R0.1 0.2 0.225 0.2 0.225 0.315 0.35 1 0.3 0.945 0.35 0.45 0.275 0.6 0.355 For board assembly information please refer to Infineon website "Packages" 0.17 0.15 Copper Solder mask Stencil apertures Marking Layout (Example) BFR193L3 Type code Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 0.5 1.16 Pin 1 marking 8 4 0.76 18 2007-04-20 BC846...-BC850... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 19 2007-04-20