BEREX BCP020T

BCP020T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 200µm)
The BeRex BCP020T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 200 micron gate width
making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5
GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band
applications. The BCP020T is produced using state of the art metallization with SI 3N4 passivation and is screened to
assure reliability.
PRODUCT FEATURES



24 dBm Typical Output Power
14 dB Typical Gain @ 12 GHz
0.25 X 200 Micron Recessed Gate
APPLICATIONS



Commercial
Military / Hi-Rel.
Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50%
Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
NF
50 Ohm Noise Figure (Vds=2V, Ids=10 mA
Idss
Saturated Drain Current (Vgs = 0V, Vds = 3V)
Gm
Transconductance (Vds = 3V, Vgs = 50% Idss)
Vp
Pinch-off Voltage (Ids = 0.3 mA, Vds = 3V)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
MIN.
TYPICAL
22.5
24.0
24.0
14.0
12.0
60
55
12.0
12 GHz
MAX.
dBm
dB
%
1.09
40
60
dB
80
80.0
-2.5
UNIT
mA
mS
-1.1
-0.5
V
-12
V
BVgd
Drain Breakdown Voltage (Ig = 0.6 mA, source open)
-15
BVgs
Source Breakdown Voltage (Ig = 0.6 mA, drain open)
-13
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
160
° C/W
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st
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011
BCP020T
ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) Ta = 25° C
SYMBOL
PARAMETER/TEST CONDITIONS
P1dB
Output Power @ P1dB (Vds = 8V, Ids = 50%
Idss)
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
NF
50 Ohm Noise Figure (Vds=2V, Ids=10 mA
Idss
Saturated Drain Current (Vgs = 0V, Vds = 1.0V)
Gm
Transconductance (Vds = 3V, Vgs = 50% Idss)
Vp
Pinch-off Voltage (Ids = 0.3 mA, Vds = 3V)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
MIN.
TYPICAL
20.0
21.0
21.0
17.0
13.0
45
45
15.5
12 GHz
MAX.
dBm
dB
%
1.09
40
dB
60
80
80.0
-2.5
UNIT
mA
mS
-1.1
-0.5
V
BVgd
Drain Breakdown Voltage (Ig = 0.6 mA, source open)
-15
-12
V
BVgs
Source Breakdown Voltage (Ig = 0.6 mA, drain open)
-13
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
160
°C/W
MAXIMUM RATING (Ta = 25° C)
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
12 V
-6 V
Idss
11 mA
17 dBm
175° C
-60° C - 150° C
1.0 W
CONTINUOUS
8V
-3 V
Idss
2 mA
@ 3dB compression
150° C
-60° C - 150° C
0.8 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
www.berex.com
st
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011
BCP020T
PIN_POUT/Gain, PAE (12 GHz)
Frequency = 12GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Power)
Frequency = 12GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)
PIN_POUT/Gain, PAE (18 GHz)
Frequency = 18GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Power)
www.berex.com
Frequency = 18GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)
st
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011
BCP020T
S-PARAMETER (Vds = 8V, Ids = 50% Idss)
FREQ.
[GHZ]
S11
[MAG]
S11
[ANG.]
S21
[MAG]
S21
[ANG.]
S12
[MAG]
S12
[ANG.]
S22
[MAG]
S22
[ANG.]
1
0.98
-17.63
6.54
165.56
0.014
81.13
0.80
-5.99
2
0.95
-35.11
6.35
152.34
0.027
70.37
0.78
-11.31
3
0.90
-52.87
6.08
140.12
0.039
64.06
0.75
-15.78
4
0.85
-69.99
5.77
127.94
0.048
53.79
0.71
-20.09
5
0.80
-88.24
5.43
116.00
0.054
47.49
0.67
-24.42
6
0.76
-105.52
5.04
104.87
0.058
40.26
0.63
-27.88
7
0.72
-122.72
4.68
93.83
0.063
33.49
0.59
-32.54
8
0.71
-138.65
4.33
84.53
0.064
29.01
0.56
-34.82
9
0.69
-152.44
3.97
75.99
0.063
25.78
0.53
-36.61
10
0.68
-166.12
3.69
67.53
0.064
22.40
0.51
-38.64
11
0.69
-178.47
3.38
59.72
0.064
18.97
0.47
-39.57
12
0.70
170.61
3.17
51.75
0.067
17.78
0.46
-42.35
13
0.71
158.55
2.94
44.52
0.061
12.25
0.43
-43.48
14
0.73
149.14
2.73
37.18
0.062
12.90
0.40
-45.06
15
0.74
140.53
2.57
30.17
0.063
10.83
0.37
-47.57
16
0.78
131.12
2.40
22.71
0.064
8.80
0.33
-49.99
17
0.81
125.12
2.23
15.52
0.062
6.82
0.29
-55.76
18
0.82
117.90
2.06
8.53
0.066
2.23
0.24
-62.01
19
0.84
111.86
1.89
0.82
0.065
0.95
0.19
-72.70
20
0.86
109.58
1.74
-5.04
0.066
-1.33
0.14
-89.32
21
0.87
105.71
1.60
-11.40
0.068
-0.98
0.11
-123.58
22
0.88
103.28
1.45
-17.65
0.068
-3.31
0.13
-160.51
23
0.88
103.13
1.32
-22.86
0.070
-5.10
0.18
174.94
24
0.88
101.01
1.20
-28.51
0.070
-5.63
0.25
162.82
25
0.90
100.91
1.08
-33.17
0.066
-6.26
0.32
154.30
26
0.90
102.38
1.00
-36.21
0.070
-2.08
0.38
150.28
Note: S-parameters include bond wires. Reference planes are at edge of substrates shown on “Wire Bonding Information” figure below.
www.berex.com
st
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011
BCP020T
WIRE BONDING INFORMATION
Using 1 mil. diameter, Au bonding wires.
1. Gate to input transmission line
- Length and Height : 600 µm x 250 µm
- Number of wire(s): 1
2. Drain to output transmission line
- Length and Height : 400 µm x 250 µm
- Number of wire(s) : 1
3. Source to ground plate
- Length and Height : 250 µm x 300 µm
- Number of wire(s) : 4
DISCLAIMER
BEREX RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN. BEREX DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
BEREX PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES WITHOUT THE
EXPRESS WRITTEN APPROVAL OF BEREX.
1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b)
support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use
provided in labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
www.berex.com
st
BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011
Rev. 1.2
September 2011