BCP020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 200µm) The BeRex BCP020T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 200 micron gate width making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5 GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP020T is produced using state of the art metallization with SI 3N4 passivation and is screened to assure reliability. PRODUCT FEATURES 24 dBm Typical Output Power 14 dB Typical Gain @ 12 GHz 0.25 X 200 Micron Recessed Gate APPLICATIONS Commercial Military / Hi-Rel. Test & Measurement ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss) NF 50 Ohm Noise Figure (Vds=2V, Ids=10 mA Idss Saturated Drain Current (Vgs = 0V, Vds = 3V) Gm Transconductance (Vds = 3V, Vgs = 50% Idss) Vp Pinch-off Voltage (Ids = 0.3 mA, Vds = 3V) TEST FREQ. 12 GHz 18 GHz 12 GHz 18 GHz 12 GHz 18 GHz MIN. TYPICAL 22.5 24.0 24.0 14.0 12.0 60 55 12.0 12 GHz MAX. dBm dB % 1.09 40 60 dB 80 80.0 -2.5 UNIT mA mS -1.1 -0.5 V -12 V BVgd Drain Breakdown Voltage (Ig = 0.6 mA, source open) -15 BVgs Source Breakdown Voltage (Ig = 0.6 mA, drain open) -13 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 160 ° C/W www.berex.com st BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 September 2011 BCP020T ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss) NF 50 Ohm Noise Figure (Vds=2V, Ids=10 mA Idss Saturated Drain Current (Vgs = 0V, Vds = 1.0V) Gm Transconductance (Vds = 3V, Vgs = 50% Idss) Vp Pinch-off Voltage (Ids = 0.3 mA, Vds = 3V) TEST FREQ. 12 GHz 18 GHz 12 GHz 18 GHz 12 GHz 18 GHz MIN. TYPICAL 20.0 21.0 21.0 17.0 13.0 45 45 15.5 12 GHz MAX. dBm dB % 1.09 40 dB 60 80 80.0 -2.5 UNIT mA mS -1.1 -0.5 V BVgd Drain Breakdown Voltage (Ig = 0.6 mA, source open) -15 -12 V BVgs Source Breakdown Voltage (Ig = 0.6 mA, drain open) -13 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 160 °C/W MAXIMUM RATING (Ta = 25° C) SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE 12 V -6 V Idss 11 mA 17 dBm 175° C -60° C - 150° C 1.0 W CONTINUOUS 8V -3 V Idss 2 mA @ 3dB compression 150° C -60° C - 150° C 0.8 W Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device. www.berex.com st BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 September 2011 BCP020T PIN_POUT/Gain, PAE (12 GHz) Frequency = 12GHz Vds = 8 V, Ids = 50% Idss (Tuned for Power) Frequency = 12GHz Vds = 8 V, Ids = 50% Idss (Tuned for Gain) PIN_POUT/Gain, PAE (18 GHz) Frequency = 18GHz Vds = 8 V, Ids = 50% Idss (Tuned for Power) www.berex.com Frequency = 18GHz Vds = 8 V, Ids = 50% Idss (Tuned for Gain) st BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 September 2011 BCP020T S-PARAMETER (Vds = 8V, Ids = 50% Idss) FREQ. [GHZ] S11 [MAG] S11 [ANG.] S21 [MAG] S21 [ANG.] S12 [MAG] S12 [ANG.] S22 [MAG] S22 [ANG.] 1 0.98 -17.63 6.54 165.56 0.014 81.13 0.80 -5.99 2 0.95 -35.11 6.35 152.34 0.027 70.37 0.78 -11.31 3 0.90 -52.87 6.08 140.12 0.039 64.06 0.75 -15.78 4 0.85 -69.99 5.77 127.94 0.048 53.79 0.71 -20.09 5 0.80 -88.24 5.43 116.00 0.054 47.49 0.67 -24.42 6 0.76 -105.52 5.04 104.87 0.058 40.26 0.63 -27.88 7 0.72 -122.72 4.68 93.83 0.063 33.49 0.59 -32.54 8 0.71 -138.65 4.33 84.53 0.064 29.01 0.56 -34.82 9 0.69 -152.44 3.97 75.99 0.063 25.78 0.53 -36.61 10 0.68 -166.12 3.69 67.53 0.064 22.40 0.51 -38.64 11 0.69 -178.47 3.38 59.72 0.064 18.97 0.47 -39.57 12 0.70 170.61 3.17 51.75 0.067 17.78 0.46 -42.35 13 0.71 158.55 2.94 44.52 0.061 12.25 0.43 -43.48 14 0.73 149.14 2.73 37.18 0.062 12.90 0.40 -45.06 15 0.74 140.53 2.57 30.17 0.063 10.83 0.37 -47.57 16 0.78 131.12 2.40 22.71 0.064 8.80 0.33 -49.99 17 0.81 125.12 2.23 15.52 0.062 6.82 0.29 -55.76 18 0.82 117.90 2.06 8.53 0.066 2.23 0.24 -62.01 19 0.84 111.86 1.89 0.82 0.065 0.95 0.19 -72.70 20 0.86 109.58 1.74 -5.04 0.066 -1.33 0.14 -89.32 21 0.87 105.71 1.60 -11.40 0.068 -0.98 0.11 -123.58 22 0.88 103.28 1.45 -17.65 0.068 -3.31 0.13 -160.51 23 0.88 103.13 1.32 -22.86 0.070 -5.10 0.18 174.94 24 0.88 101.01 1.20 -28.51 0.070 -5.63 0.25 162.82 25 0.90 100.91 1.08 -33.17 0.066 -6.26 0.32 154.30 26 0.90 102.38 1.00 -36.21 0.070 -2.08 0.38 150.28 Note: S-parameters include bond wires. Reference planes are at edge of substrates shown on “Wire Bonding Information” figure below. www.berex.com st BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 September 2011 BCP020T WIRE BONDING INFORMATION Using 1 mil. diameter, Au bonding wires. 1. Gate to input transmission line - Length and Height : 600 µm x 250 µm - Number of wire(s): 1 2. Drain to output transmission line - Length and Height : 400 µm x 250 µm - Number of wire(s) : 1 3. Source to ground plate - Length and Height : 250 µm x 300 µm - Number of wire(s) : 4 DISCLAIMER BEREX RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. BEREX DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY BEREX PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES WITHOUT THE EXPRESS WRITTEN APPROVAL OF BEREX. 1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.berex.com st BeRex, Inc. 1735 North 1 Street #302 San Jose, CA 95112 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 September 2011